JP2009302511A - バンプ及び該バンプの形成方法並びに該バンプが形成された基板の実装方法 - Google Patents
バンプ及び該バンプの形成方法並びに該バンプが形成された基板の実装方法 Download PDFInfo
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- JP2009302511A JP2009302511A JP2009053085A JP2009053085A JP2009302511A JP 2009302511 A JP2009302511 A JP 2009302511A JP 2009053085 A JP2009053085 A JP 2009053085A JP 2009053085 A JP2009053085 A JP 2009053085A JP 2009302511 A JP2009302511 A JP 2009302511A
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- Prior art keywords
- bump
- layer
- bump layer
- substrate
- conductive metal
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- Electroplating Methods And Accessories (AREA)
Abstract
【解決手段】本発明に係るバンプは、基板上に形成され、金、銅、ニッケルのいずれかである第1の導電性金属のバルク体からなる第1バンプ層と、第1バンプ層上に形成され、金、銀のいずれかである第2の導電性金属の粉末の焼結体からなる第2バンプ層とからなる2層構造を有する。第1バンプ層を構成するバルク体は、メッキ法、スパッタリング法、CVD法のいずれかにより形成されるものである。ここで、第2バンプ層を構成する焼結体は、純度が99.9重量%以上であり、平均粒径が0.005μm〜1.0μmである第2の導電性金属からなる金属粉末を焼結して形成されたものである。そして、第2バンプ層のヤング率は、第1バンプ層のヤング率の0.1〜0.4倍とする。
【選択図】 図1
Description
前記第2バンプ層を構成する焼結体は、純度が99.9重量%以上であり、平均粒径が0.005μm〜1.0μmである第2の導電性金属からなる金属粉末を焼結して形成されたものであり、前記第2バンプ層のヤング率が、前記第1バンプ層のヤング率の0.1〜0.4倍である、バンプである。
Claims (9)
- 基板上に所定パターンで形成され、導電性金属からなるバンプであって、
基板上に形成され、金、銅、ニッケルのいずれかである第1の導電性金属のバルク体からなる第1バンプ層と、前記第1バンプ層上に形成され、金、銀のいずれかである第2の導電性金属の粉末の焼結体からなる第2バンプ層と、からなる2層構造を有し、
前記第1バンプ層を構成するバルク体は、メッキ法、スパッタリング法、CVD法のいずれかにより形成されるものであり、
前記第2バンプ層を構成する焼結体は、純度が99.9重量%以上であり、平均粒径が0.005μm〜1.0μmである第2の導電性金属からなる金属粉末を焼結して形成されたものであり、
前記第2バンプ層のヤング率が、前記第1バンプ層のヤング率の0.1〜0.4倍である、バンプ。 - 第1バンプ層のバンプ全体に対する高さ比は、0.1〜0.9である請求項1記載のバンプ。
- 第1の導電性金属と第2の導電性金属とが異なる種類の金属であり、第1バンプ層と第2バンプ層との間に、密着性向上のためのバルク状の中間層を少なくとも1層備える請求項1または請求項2記載のバンプ。
- 中間層は、少なくとも第2バンプ層との接触面が第2の導電性金属と同じ導電性金属からなる請求項3記載のバンプ。
- 請求項1〜請求項4のいずれかに記載のバンプの製造方法であって、
基板上に、メッキ法、スパッタリング法、CVD法のいずれかにより第1バンプ層を形成する工程、
前記第1バンプ層上に、純度が99.9重量%以上であり、平均粒径が0.005μm〜1.0μmである第2の導電性金属の粉末を含む金属ペーストを塗布し、前記金属ペーストを乾燥させた後、焼結温度を70〜320℃として加熱焼結して第2バンプ層を形成する工程、
を含む方法。 - 第1バンプ層の形成後、中間層を形成する工程を少なくとも1回含む請求項5記載のバンプの製造方法。
- 請求項1〜請求項4のいずれかに記載のバンプが形成された基板を用いて、フリップチップ法により前記基板を対向基板に実装する方法であって、少なくとも第2バンプ層を加熱しながら前記基板の一方向又は双方向から加圧しバンプを接合する方法。
- 接合時の加熱温度を70〜300℃とする請求項7記載の方法。
- 更に、少なくとも第2バンプ層に超音波を印加して加圧する請求項7又は請求項8記載の方法。
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JP2009053085A JP5363839B2 (ja) | 2008-05-12 | 2009-03-06 | バンプ及び該バンプの形成方法並びに該バンプが形成された基板の実装方法 |
PCT/JP2010/053615 WO2010101236A1 (ja) | 2009-03-06 | 2010-03-05 | バンプ及び該バンプの形成方法並びに該バンプが形成された基板の実装方法 |
KR1020117022980A KR101650219B1 (ko) | 2009-03-06 | 2010-03-05 | 범프, 그 범프의 형성방법 및 그 범프가 형성된 기판의 실장방법 |
EP10748829.8A EP2405474A4 (en) | 2009-03-06 | 2010-03-05 | BOSS, METHOD FOR FORMING BOSS AND METHOD FOR MOUNTING SUBSTRATE COMPRISING BOSS FORMED ON IT |
US13/144,411 US8492894B2 (en) | 2008-05-12 | 2010-03-05 | Bump, method for forming the bump, and method for mounting substrate having the bump thereon |
CN201080008016.7A CN102318052B (zh) | 2009-03-06 | 2010-03-05 | 凸块及该凸块的形成方法以及形成有该凸块的基板的安装方法 |
US13/912,826 US8962471B2 (en) | 2009-03-06 | 2013-06-07 | Bump, method for forming the bump, and method for mounting substrate having the bump thereon |
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US20110272802A1 (en) | 2011-11-10 |
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US8492894B2 (en) | 2013-07-23 |
EP2405474A4 (en) | 2015-05-27 |
JP5363839B2 (ja) | 2013-12-11 |
KR101650219B1 (ko) | 2016-08-30 |
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