JP2009295958A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2009295958A JP2009295958A JP2009008178A JP2009008178A JP2009295958A JP 2009295958 A JP2009295958 A JP 2009295958A JP 2009008178 A JP2009008178 A JP 2009008178A JP 2009008178 A JP2009008178 A JP 2009008178A JP 2009295958 A JP2009295958 A JP 2009295958A
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- Prior art keywords
- plating layer
- substrate
- external connection
- connection terminal
- semiconductor device
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000007747 plating Methods 0.000 claims abstract description 39
- 238000009713 electroplating Methods 0.000 claims abstract description 37
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000010931 gold Substances 0.000 claims abstract description 26
- 229910052737 gold Inorganic materials 0.000 claims abstract description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 89
- 238000007772 electroless plating Methods 0.000 claims description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 230000021615 conjugation Effects 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000010030 laminating Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- Chemically Coating (AREA)
Abstract
【解決手段】外部接続端子2を有する基板3と、基板3の半導体素子の実装部1に実装された半導体素子とを備えている。外部接続端子2は、基板3の表面上に設けられた端子部2aの上に、無電解ニッケルめっき層19と無電解金めっき層20と電解金めっき層21とが順次積層されて形成されている。これによって、外部接続端子2の表面である電解金めっき相21の表面が緻密であるので、外部接続端子2内には湿気が侵入しにくくなり、接合性を向上できる。
【選択図】図3
Description
2,8,15 外部接続端子
2a,8a 端子部
3,10 基板
4,11 半導体素子
5,13 接続端子
6 接続バンプ
7 接着剤
9,16 接続バンプ
12 金属細線
14 封止樹脂体
17 電解めっき用配線パターン
18 ソルダーレジスト
19 無電解ニッケルめっき層(第一の無電解めっき層)
20 無電解金めっき層 (第二の無電解めっき層)
21 電解金めっき層 (電解めっき層)
22 Pdめっきシード
Claims (5)
- 外部接続端子を有する基板と、
前記基板に設けられた半導体素子とを備え、
前記外部接続端子は、前記基板の表面上に設けられた端子部と、前記端子部の上に設けられた無電解めっき層と、前記無電解めっき層の上に設けられた電解めっき層とを有している半導体装置。 - 請求項1に記載の半導体装置において、
前記半導体素子は、前記基板の前記表面の中央に設けられ、
前記外部接続端子は、前記基板の前記表面のうち前記半導体素子が設けられた部分よりも周縁に設けられており、
前記基板内では、電解めっき用配線パターンが、前記外部接続端子から前記基板の前記表面の外周部へ向かって延びている半導体装置。 - 請求項1または2に記載の半導体装置において、
前記基板は、前記半導体素子に電気的に接続される接続端子を有し、
前記外部接続端子の表層は、前記電解めっき層であり、
前記接続端子は、無電解めっき層からなる半導体装置。 - 請求項1から3の何れか一つに記載の半導体装置において、
前記外部接続端子の前記無電解めっき層は、前記端子部の上に設けられた第一の無電解めっき層と、前記第一の無電解めっき層の上に設けられた第二の無電解めっき層とを有し、
前記端子部は銅層であり、前記第一の無電解めっき層は無電解ニッケルめっき層であり、前記第二の無電解めっき層は無電解金めっき層であり、前記電解めっき層は電解金めっき層である半導体装置。 - 請求項1から4の何れか一つに記載の半導体装置において、
前記外部接続端子に接続された接続バンプをさらに備えている半導体装置。
Priority Applications (3)
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JP2009008178A JP2009295958A (ja) | 2008-05-09 | 2009-01-16 | 半導体装置 |
US12/372,130 US8097962B2 (en) | 2008-05-09 | 2009-02-17 | Semiconductor device |
US13/308,038 US8907468B2 (en) | 2008-05-09 | 2011-11-30 | Semiconductor device |
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JP2008123505 | 2008-05-09 | ||
JP2009008178A JP2009295958A (ja) | 2008-05-09 | 2009-01-16 | 半導体装置 |
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JP2009008178A Pending JP2009295958A (ja) | 2008-05-09 | 2009-01-16 | 半導体装置 |
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JP (1) | JP2009295958A (ja) |
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US8461036B2 (en) * | 2009-12-22 | 2013-06-11 | Intel Corporation | Multiple surface finishes for microelectronic package substrates |
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US8907468B2 (en) | 2014-12-09 |
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US20120074569A1 (en) | 2012-03-29 |
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