JP2009278103A - 金属層の間に挟まれたフリップチップダイを特徴とする半導体パッケージ - Google Patents
金属層の間に挟まれたフリップチップダイを特徴とする半導体パッケージ Download PDFInfo
- Publication number
- JP2009278103A JP2009278103A JP2009116937A JP2009116937A JP2009278103A JP 2009278103 A JP2009278103 A JP 2009278103A JP 2009116937 A JP2009116937 A JP 2009116937A JP 2009116937 A JP2009116937 A JP 2009116937A JP 2009278103 A JP2009278103 A JP 2009278103A
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- Prior art keywords
- metal layer
- die
- power device
- package
- semiconductor device
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- 239000002184 metal Substances 0.000 title claims abstract description 159
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 159
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 229910000679 solder Inorganic materials 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims 10
- 239000003566 sealing material Substances 0.000 claims 1
- 230000008901 benefit Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003090 exacerbative effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Abstract
【解決手段】一方の金属層224は、ハンダボール接点を介してダイ202(例えば、ICパッドあるいはMOSFETのゲートまたはソースパッド)の第1の表面で種々のパッドに電気的かつ熱的に接続されるように構成されたリードフレームの部分を有する。他方の金属層226は、ダイ202の反対側と少なくとも熱的に接続される。本発明に係るパッケージの実施形態は、優れた放熱特性を示し、その上、ワイヤボンドにかかる費用を抑制している。本発明の実施形態は、特に、パワーデバイスのパッケージに適する。
【選択図】図2A
Description
Claims (33)
- パワーデバイスダイと熱的に接続されるように構成される第1の金属層と、
前記パワーデバイスダイの前記第1の金属層の配置された側の反対側に配置される第2の金属層と、からなる半導体装置用パッケージにおいて、
前記第2の金属層は、前記パワーデバイスダイの表面で、ハンダボール接点を介してパッドと電気的かつ熱的に接続されるように構成され、
前記第1の金属層または前記第2の金属層は、前記パワーデバイスダイ、前記ハンダボール接点および前記第1および第2の金属層の少なくとも一部を封止するプラスチックパッケージ体から突出する一体型のリードを有する
ことを特徴とする半導体装置用パッケージ。 - 前記第1の金属層は、前記パワーデバイスダイと電気的に接続される
ことを特徴とする請求項1に記載の半導体装置用パッケージ。 - 前記第1の金属層は、第2のハンダボール接点を介して、前記パワーデバイスダイと電気的に接続される
ことを特徴とする請求項2に記載の半導体装置用パッケージ。 - 前記第1の金属層の一部は、前記プラスチックパッケージ体から露出してヒートシンクを形成する
ことを特徴とする請求項1に記載の半導体装置用パッケージ。 - 前記第2の金属層の一部は、前記プラスチックパッケージ体から露出してヒートシンクを形成する
ことを特徴とする請求項1に記載の半導体装置用パッケージ。 - さらに、前記第2の金属層の一部と電気的に接続される第2のパワーデバイスダイを有する
ことを特徴とする請求項1に記載の半導体装置用パッケージ。 - 前記第2の金属層の同一部分は、第1のパワーデバイスダイおよび第2のパワーデバイスダイと電気的に接続される
ことを特徴とする請求項6に記載の半導体装置用パッケージ。 - 前記第2の金属層の同一部分は、前記第1の金属層と垂直方向に電気的に接続される
ことを特徴とする請求項7に記載の半導体装置用パッケージ。 - 前記第1のパワーデバイスダイは、MOSFETであり、
前記第2の金属層の同一部分は、前記第1のパワーデバイスダイと電気的に接続される
ことを特徴とする請求項7に記載の半導体装置用パッケージ。 - 前記第2の金属層は、固定位置で前記ハンダボール接点を受容するように構成されるとともに、
第1のパワーデバイスダイの大きさや形状によって、異なる位置で前記第1のパワーデバイスチップに対するその他のハンダボール接点を受容するように構成される
ことを特徴とする請求項6に記載の半導体装置用パッケージ。 - さらに、前記第2のダイの上方または下方に配置される第3のパワーデバイスダイを含むとともに、
ハンダボールを介して、前記第2のパワーデバイスダイのパッドと電気的に接続されるパッドを有する
ことを特徴とする請求項6に記載の半導体装置用パッケージ。 - 前記パワーデバイスダイは、MOSFETダイを含み、
前記第2の金属層は、前記MOSFETダイの表面でゲートパッドと電気的に接続される第1の部分と前記MOSFETダイの表面でソースパッドと電気的に接続される第2の部分を有する
ことを特徴とする請求項1に記載の半導体装置用パッケージ。 - 前記第1の金属層は、前記MOSFETダイの第2の表面でドレインと熱的かつ電気的に接続される
ことを特徴とする請求項12に記載の半導体装置用パッケージ。 - 前記リードは、前記第2の金属層と一体となっている
ことを特徴とする請求項12に記載の半導体装置用パッケージ。 - 前記パワーデバイスダイは、集積回路(IC)ダイを含み、
前記第2の金属層は、前記ICダイの表面で各パッドと電気的に接続される複数の部分を含む
ことを特徴とする請求項1に記載の半導体装置用パッケージ。 - 前記第1の金属層は、前記ICダイの第2の表面で電気的に接続される
ことを特徴とする請求項15に記載の半導体装置用パッケージ。 - 前記第2の金属層の一部は、開孔部を備える
ことを特徴とする請求項1に記載の半導体装置用パッケージ。 - 第1のパワーデバイスダイの第1の側面と少なくとも熱的に接続される第1の金属層と、
前記第1のパワーデバイスダイの上方または下方に配置されるとともに、ハンダボール接点を介して、前記第1のパワーデバイスダイの第2の側面と電気的に接触する第2のパワーデバイスダイと、
前記第1のパワーデバイスダイから前記第2のパワーデバイスダイの対向する側に配置される第2の金属層と、から構成される半導体装置用パッケージであって、
前記第2の金属層は、前記第2のパワーデバイスダイと少なくとも熱的に接続され、
前記第1の金属層または前記第2の金属層は、前記パワーデバイスダイと、前記ハンダボール接点と、前記第1および第2の金属層の少なくとも一部を封止するプラスチックパッケージ体から突出する一体型のリードを有し、
前記第1のパワーデバイスダイまたは前記第2のパワーデバイスダイは、前記第1の金属層または前記第2の金属層と電気的に接続される
ことを特徴とする半導体装置用パッケージ。 - 前記第1のパワーデバイスダイは、第2のハンダボール接点を介して、前記第1の金属層と電気的に接続される
ことを特徴とする請求項18に記載の半導体装置用パッケージ。 - 前記第1のパワーデバイスダイは、第2のハンダボール接点を介して、前記第1および第2の金属層の間に配置される第3の金属層と電気的に接続される
ことを特徴とする請求項18に記載の半導体装置用パッケージ。 - 前記第1の金属層の一部は、前記プラスチックパッケージ本体から露出されてヒートシンクを形成する
ことを特徴とする請求項18に記載の半導体装置用パッケージ。 - 前記第2の金属層の一部は、前記プラスチックパッケージ本体から露出されて第2のヒートシンクを形成する
ことを特徴とする請求項18に記載の半導体装置用パッケージ。 - パワーデバイスダイの第1の表面と少なくとも熱的に接続される第1の金属層を備える工程と、
ハンダボール接点を介して、前記第1の表面に対向する前記パワーデバイスチップの第2の表面と熱的かつ電気的に接続される第2の金属層を備える工程と、
前記ダイ、前記ハンダボール接点、および前記第1および第2の金属層の少なくとも一部をプラスチック封止材の内部で封止して、パッケージ体を形成する工程と、を有する
ことを特徴とする半導体装置のパッケージ方法。 - 前記第1の金属層は、前記パワーデバイスダイと電気的に接続される
ことを特徴とする請求項23に記載の半導体装置のパッケージ方法。 - 前記パワーデバイスダイを封止する工程は、前記第1の金属層の一部をヒートシンクとして露出する工程である
ことを特徴とする請求項23に記載の半導体装置のパッケージ方法。 - 前記パワーデバイスダイを封止する工程は、前記第2の金属層の一部を第2のヒートシンクとして露出する工程である
ことを特徴とする請求項23に記載の半導体装置のパッケージ方法。 - さらに、前記第2の金属層の平面の外に前記第2の金属層の一部を曲げて、前記パッケージ体から露出させてリードを形成する工程を有する
ことを特徴とする請求項23に記載の半導体装置のパッケージ方法。 - 前記第2の金属層に、前記第2の金属層の平面の外に曲げられた部分を設けて、パッケージ体から露出させてリードを形成する
ことを特徴とする請求項23に記載の半導体装置のパッケージ方法。 - 前記第1の金属層は、第2のパワーデバイスダイの第1の表面と少なくとも熱的に接続する部分を備えるとともに、
前記第2の金属層は、ハンダボール接点を介して、前記第1の表面に対向する前記第2のパワーデバイスダイの第2の表面で、各パッドと電気的かつ熱的に接続される部分を有する
ことを特徴とする請求項23に記載の半導体装置のパッケージ方法。 - 前記部分はまた、前記第1のパワーデバイスダイの前記第2の表面でパッドと電気的に接続される
ことを特徴とする請求項29に記載の半導体装置のパッケージ方法。 - 第1のパワーデバイスダイは、MOSFETダイを有し、
前記部分を、前記MOSFETダイのゲートと電気的に接続する
ことを特徴とする請求項29に記載の半導体装置のパッケージ方法。 - さらに、前記第2のパワーデバイスダイの上方または下方に露出されるとともに、第2のハンダボール接点を介して、前記第2のパワーデバイスダイと電気的に接続される第3のパワーデバイスダイを備える工程を有する
ことを特徴とする請求項29に記載の半導体装置のパッケージ方法。 - 第1のパワーデバイスダイの第1の側面と少なくとも熱的に接続されるように構成される第1の金属層を備える工程と、
前記第1のパワーデバイスダイの上方または下方に配置されるとともに、ハンダボール接点を介して、前記第1のパワーデバイスダイの第2の側面と電気的に接触する第2のパワーデバイスダイを備える工程と、
前記第1のパワーデバイスダイから前記第2のパワーデバイスダイの対向する側に配置される第2の金属層を備える工程と、を有する半導体装置用パッケージの形成方法において、
前記第2の金属層は、前記第2のパワーデバイスダイと少なくとも熱的に接続され、
前記第1の金属層または前記第2の金属層は、前記パワーデバイスダイと前記ハンダボール接点と前記第1および第2の金属層の少なくとも一部を封止するプラスチックパッケージ体から突出する一体型のリードを有し、
前記第1のパワーデバイスダイまたは前記第2のパワーデバイスダイを、前記第1の金属層または前記第2の金属層と電気的に接続する
ことを特徴とする半導体装置用パッケージの形成方法。
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