JP2009260161A - 半導体ウエハの製造方法 - Google Patents
半導体ウエハの製造方法 Download PDFInfo
- Publication number
- JP2009260161A JP2009260161A JP2008109924A JP2008109924A JP2009260161A JP 2009260161 A JP2009260161 A JP 2009260161A JP 2008109924 A JP2008109924 A JP 2008109924A JP 2008109924 A JP2008109924 A JP 2008109924A JP 2009260161 A JP2009260161 A JP 2009260161A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- protective film
- prime
- main surface
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000001039 wet etching Methods 0.000 claims abstract description 15
- 230000001681 protective effect Effects 0.000 claims description 31
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000005498 polishing Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/959—Mechanical polishing of wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】プライムウエハの少なくとも主表面にエピタキシャル成長によってデバイス層を形成した後、少なくともデバイス層を被覆する保護膜を形成し、前記保護膜のうち前記プライムウエハの主表面に対応する部分以外の部分をウエットエッチングによって除去してプライムウエハの主表面に対する裏面に研磨する。さらに、プライムウエハの前記主表面に対応する部分の保護膜をウエットエッチングによって除去する。
【選択図】図2
Description
32 シリコン酸化膜
33 エピ層(デバイス層)
34 TEOS酸化膜
35 ネガレジスト
Claims (5)
- 半導体ウエハの製造方法であって、
プライムウエハを準備する準備工程と、
前記プライムウエハの少なくとも主表面にエピタキシャル成長によってデバイス層を形成するデバイス層形成工程と、
少なくとも前記デバイス層を被覆する保護膜を形成する保護膜形成工程と、
前記保護膜のうち前記プライムウエハの主表面に対応する部分以外の部分をウエットエッチングによって除去する第1除去行程と、
前記プライムウエハの主表面に対する裏面に研磨を施す研磨工程と、
前記保護膜のうち前記プライムウエハの主表面に対応する部分をウエットエッチングによって除去する第2除去工程と、を有する半導体ウエハの製造方法。 - 前記保護膜形成工程は、前記保護膜のうち前記プライムウエハの主表面に対応する部分上に追加保護膜を形成する追加保護膜形成工程を含むことを特徴とする請求項1記載の半導体ウエハの製造方法。
- 前記第1除去工程において、前記追加保護膜をウエットエッチングによって除去することを特徴とする請求項2記載の半導体ウエハの製造方法。
- 前記保護膜はTEOS酸化膜であることを特徴とする請求項2又は3記載の半導体ウエハの製造方法。
- 前記追加保護膜はネガ型レジスト又はポジ型レジストであることを特徴とする請求項2乃至4のいずれか1に記載の半導体ウエハの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008109924A JP4951580B2 (ja) | 2008-04-21 | 2008-04-21 | 半導体ウエハの製造方法 |
US12/382,344 US8093137B2 (en) | 2008-04-21 | 2009-03-13 | Method of manufacturing semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008109924A JP4951580B2 (ja) | 2008-04-21 | 2008-04-21 | 半導体ウエハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009260161A true JP2009260161A (ja) | 2009-11-05 |
JP4951580B2 JP4951580B2 (ja) | 2012-06-13 |
Family
ID=41201456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008109924A Active JP4951580B2 (ja) | 2008-04-21 | 2008-04-21 | 半導体ウエハの製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8093137B2 (ja) |
JP (1) | JP4951580B2 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6419716A (en) * | 1987-07-14 | 1989-01-23 | Mitsubishi Electric Corp | Manufacture of epitaxial growth wafer |
JPH01201922A (ja) * | 1988-02-05 | 1989-08-14 | Nec Corp | ウェハーの製造方法 |
JP2000277469A (ja) * | 1999-03-25 | 2000-10-06 | Sumitomo Electric Ind Ltd | ウエハの裏面研磨方法 |
JP2002231634A (ja) * | 2001-01-30 | 2002-08-16 | Shin Etsu Handotai Co Ltd | シリコンエピタキシャルウェーハ及びシリコンエピタキシャルウェーハの製造方法 |
JP2005209862A (ja) * | 2004-01-22 | 2005-08-04 | Komatsu Electronic Metals Co Ltd | 半導体エピタキシャルウェーハの製造方法 |
JP2006120865A (ja) * | 2004-10-21 | 2006-05-11 | Sumco Corp | 半導体基板の製造方法及び半導体基板 |
JP2007220974A (ja) * | 2006-02-17 | 2007-08-30 | Sumco Corp | ウェーハおよびその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH076986A (ja) | 1993-06-16 | 1995-01-10 | Nippondenso Co Ltd | 半導体基板研削方法 |
US5668045A (en) * | 1994-11-30 | 1997-09-16 | Sibond, L.L.C. | Process for stripping outer edge of BESOI wafers |
US5937312A (en) * | 1995-03-23 | 1999-08-10 | Sibond L.L.C. | Single-etch stop process for the manufacture of silicon-on-insulator wafers |
-
2008
- 2008-04-21 JP JP2008109924A patent/JP4951580B2/ja active Active
-
2009
- 2009-03-13 US US12/382,344 patent/US8093137B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6419716A (en) * | 1987-07-14 | 1989-01-23 | Mitsubishi Electric Corp | Manufacture of epitaxial growth wafer |
JPH01201922A (ja) * | 1988-02-05 | 1989-08-14 | Nec Corp | ウェハーの製造方法 |
JP2000277469A (ja) * | 1999-03-25 | 2000-10-06 | Sumitomo Electric Ind Ltd | ウエハの裏面研磨方法 |
JP2002231634A (ja) * | 2001-01-30 | 2002-08-16 | Shin Etsu Handotai Co Ltd | シリコンエピタキシャルウェーハ及びシリコンエピタキシャルウェーハの製造方法 |
JP2005209862A (ja) * | 2004-01-22 | 2005-08-04 | Komatsu Electronic Metals Co Ltd | 半導体エピタキシャルウェーハの製造方法 |
JP2006120865A (ja) * | 2004-10-21 | 2006-05-11 | Sumco Corp | 半導体基板の製造方法及び半導体基板 |
JP2007220974A (ja) * | 2006-02-17 | 2007-08-30 | Sumco Corp | ウェーハおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4951580B2 (ja) | 2012-06-13 |
US8093137B2 (en) | 2012-01-10 |
US20090263959A1 (en) | 2009-10-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5018066B2 (ja) | 歪Si基板の製造方法 | |
JP4723446B2 (ja) | エピタキシャルシリコンウェハおよびエピタキシャルシリコンウェハの製造方法 | |
US7935614B2 (en) | Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers | |
US7922813B2 (en) | Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers | |
EP2525390B1 (en) | Method for producing bonded wafer | |
TWI435377B (zh) | Epitaxial silicon wafers and their manufacturing methods | |
JP5273150B2 (ja) | シリコンエピタキシャルウェーハの製造方法 | |
JP4675749B2 (ja) | エピタキシャルウエーハの製造方法 | |
JP7163756B2 (ja) | 積層体、積層体の製造方法および炭化珪素多結晶基板の製造方法 | |
JP4951580B2 (ja) | 半導体ウエハの製造方法 | |
US9719189B2 (en) | Process of surface treatment for wafer | |
JP7294021B2 (ja) | 黒鉛製支持基板の表面処理方法、炭化珪素多結晶膜の成膜方法および炭化珪素多結晶基板の製造方法 | |
JPH09266214A (ja) | シリコンウェーハの製造方法及びシリコンウェーハ | |
JP7220844B2 (ja) | SiC多結晶基板の製造方法 | |
JP7255473B2 (ja) | 炭化ケイ素多結晶基板の製造方法 | |
JPH09266212A (ja) | シリコンウエーハおよびその製造方法 | |
KR101050679B1 (ko) | 표면 처리 방법, 실리콘 에피텍셜 웨이퍼의 제조 방법 및 실리콘 에피텍셜 웨이퍼 | |
JP2013055231A (ja) | エピタキシャルウェーハの製造方法 | |
JP7322408B2 (ja) | 炭化珪素多結晶基板、炭化珪素多結晶膜の製造方法および炭化珪素多結晶基板の製造方法 | |
JP2007250676A (ja) | 異種材料の積層基板の製造方法 | |
JP6696247B2 (ja) | 半導体装置の製造方法 | |
JP2011187887A (ja) | エピタキシャルウエハの製造方法 | |
JP7322371B2 (ja) | 炭化珪素多結晶基板の製造方法 | |
JP7413768B2 (ja) | 多結晶基板の製造方法 | |
KR100830997B1 (ko) | 평탄도가 개선된 실리콘 에피택셜 웨이퍼 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110329 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120312 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150316 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4951580 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |