JP2009176906A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2009176906A JP2009176906A JP2008013268A JP2008013268A JP2009176906A JP 2009176906 A JP2009176906 A JP 2009176906A JP 2008013268 A JP2008013268 A JP 2008013268A JP 2008013268 A JP2008013268 A JP 2008013268A JP 2009176906 A JP2009176906 A JP 2009176906A
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Abstract
【解決手段】成長用基板1上に選択成長用マスク11が形成され、選択成長用マスク11の一部が除去された領域にAlNバッファ層2が形成される。AlNバッファ層2上には、アンドープGaN層3、n型GaN層4、活性層5、p型GaN層6が順に積層される。絶縁膜12のコンタクトホールを介してボンディング用金属13と電極は接続される。このボンディング用金属13は、少なくとも隣接する2つ以上の前記半導体素子表面に渡って連続的に形成される。
【選択図】 図1
Description
2 AlNバッファ層
3 アンドープGaN層
4 n型GaN層
5 活性層
6 p型GaN層
9 n電極
10 p電極
11 選択成長用マスク
13 ボンディング用金属
Claims (2)
- 基板上に分離溝を隔てて半導体素子が2次元状に多数形成された半導体装置であって、
半導体装置に電力を供給するワイヤー接続用の金属電極を少なくとも隣接する2つ以上の前記半導体素子表面に渡って連続的に形成したことを特徴とする半導体装置。 - 前記金属電極は、前記半導体素子の上面及び側面に渡って連続的に形成されていることを特徴とする請求項1記載の半導体装置。
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JP2008013268A JP5366409B2 (ja) | 2008-01-24 | 2008-01-24 | 半導体装置 |
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JP2008013268A JP5366409B2 (ja) | 2008-01-24 | 2008-01-24 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009176906A true JP2009176906A (ja) | 2009-08-06 |
JP5366409B2 JP5366409B2 (ja) | 2013-12-11 |
Family
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JP2008013268A Expired - Fee Related JP5366409B2 (ja) | 2008-01-24 | 2008-01-24 | 半導体装置 |
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JP (1) | JP5366409B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013545307A (ja) * | 2010-11-04 | 2013-12-19 | コーニンクレッカ フィリップス エヌ ヴェ | 結晶緩和構造に基づく半導体発光デバイス |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0846279A (ja) * | 1994-07-26 | 1996-02-16 | Mitsubishi Electric Corp | アレイ型半導体レーザ装置 |
JPH10335703A (ja) * | 1997-05-29 | 1998-12-18 | Kyocera Corp | 半導体発光装置 |
JPH11186589A (ja) * | 1997-12-24 | 1999-07-09 | Kyocera Corp | 半導体発光装置およびその製造方法 |
JP2000077715A (ja) * | 1998-08-28 | 2000-03-14 | Kyocera Corp | 発光ダイオードアレイ |
JP2004071644A (ja) * | 2002-08-01 | 2004-03-04 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
JP2006286991A (ja) * | 2005-03-31 | 2006-10-19 | Sanyo Electric Co Ltd | 発光装置及びその製造方法 |
-
2008
- 2008-01-24 JP JP2008013268A patent/JP5366409B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0846279A (ja) * | 1994-07-26 | 1996-02-16 | Mitsubishi Electric Corp | アレイ型半導体レーザ装置 |
JPH10335703A (ja) * | 1997-05-29 | 1998-12-18 | Kyocera Corp | 半導体発光装置 |
JPH11186589A (ja) * | 1997-12-24 | 1999-07-09 | Kyocera Corp | 半導体発光装置およびその製造方法 |
JP2000077715A (ja) * | 1998-08-28 | 2000-03-14 | Kyocera Corp | 発光ダイオードアレイ |
JP2004071644A (ja) * | 2002-08-01 | 2004-03-04 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
JP2006286991A (ja) * | 2005-03-31 | 2006-10-19 | Sanyo Electric Co Ltd | 発光装置及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013545307A (ja) * | 2010-11-04 | 2013-12-19 | コーニンクレッカ フィリップス エヌ ヴェ | 結晶緩和構造に基づく半導体発光デバイス |
US9478705B2 (en) | 2010-11-04 | 2016-10-25 | Koninklijke Philips N.V. | Solid state light emitting devices based on crystallographically relaxed structures |
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JP5366409B2 (ja) | 2013-12-11 |
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