JP2009135535A - 多数個取り基板、パッケージおよび発光装置 - Google Patents
多数個取り基板、パッケージおよび発光装置 Download PDFInfo
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- JP2009135535A JP2009135535A JP2009062963A JP2009062963A JP2009135535A JP 2009135535 A JP2009135535 A JP 2009135535A JP 2009062963 A JP2009062963 A JP 2009062963A JP 2009062963 A JP2009062963 A JP 2009062963A JP 2009135535 A JP2009135535 A JP 2009135535A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】多数個取り基板は、複数の発光素子収納部4を有しており、複数の発光素子収納部4の各々が、発光素子3に電気的に接続される金めっき層9と発光素子3を囲む銀めっき層10とを含んでいる。金めっき層用の第1導体11と銀めっき層用の第2導体12とが、異なる絶縁層に設けられている。
【選択図】図6
Description
また、金めっき層は発光素子3が発光する光を反射するので、搭載部2より発光素子3が発光する光が絶縁基体1下面側に漏れるのを防止できる。よって、導体層から成る搭載部2の露出する表面に、厚さ1〜10μm程度のニッケルめっき層と厚さ0.1〜3μm程度の金めっき層9とが、電解めっき法や無電解めっき法により順次被着されていることがより好ましい。
3μmを超えると、凹部4内に収容された発光素子3の光が散乱し、反射光を高い反射率で外部に均一に放射することが困難になる。
2:搭載部
3:発光素子
4:凹部
5a,5b:配線層
9:金めっき層
10:銀めっき層
Claims (3)
- 複数の発光素子収納部を有しており、前記複数の発光素子収納部の各々が、発光素子に電気的に接続される金めっき層と前記発光素子を囲む銀めっき層とを含んでいる多数個取り基板であって、
前記金めっき層用の第1導体と前記銀めっき層用の第2導体とが、異なる絶縁層に設けられていることを特徴とする多数個取り基板。 - 発光素子収納部を有しているパッケージであって、
前記発光素子収納部に設けられており、発光素子に電気的に接続される金めっき層と、
前記発光素子収納部に設けられており、前記発光素子を囲む銀めっき層と、
前記金めっき層用の第1導体と、
前記銀めっき層用の第2導体と、
を備えたパッケージ。 - 請求項2記載のパッケージと、
前記パッケージの前記金めっき層に電気的に接続された発光素子と、
を備えた発光装置。
Priority Applications (1)
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JP2009062963A JP2009135535A (ja) | 2003-02-25 | 2009-03-16 | 多数個取り基板、パッケージおよび発光装置 |
Applications Claiming Priority (2)
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JP2003048084 | 2003-02-25 | ||
JP2009062963A JP2009135535A (ja) | 2003-02-25 | 2009-03-16 | 多数個取り基板、パッケージおよび発光装置 |
Related Parent Applications (1)
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JP2003116401A Division JP2004319939A (ja) | 2003-02-25 | 2003-04-21 | 発光素子収納用パッケージおよび発光装置 |
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JP2009135535A true JP2009135535A (ja) | 2009-06-18 |
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JP2009062963A Pending JP2009135535A (ja) | 2003-02-25 | 2009-03-16 | 多数個取り基板、パッケージおよび発光装置 |
JP2009062964A Expired - Fee Related JP5173903B2 (ja) | 2003-02-25 | 2009-03-16 | 発光素子収納用パッケージおよび発光装置 |
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JP2009062964A Expired - Fee Related JP5173903B2 (ja) | 2003-02-25 | 2009-03-16 | 発光素子収納用パッケージおよび発光装置 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569540A (zh) * | 2010-12-25 | 2012-07-11 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
EP3016140A1 (en) | 2014-10-31 | 2016-05-04 | Nichia Corporation | Light emitting device and adaptive driving beam headlamp system |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012074483A (ja) | 2010-09-28 | 2012-04-12 | Toyoda Gosei Co Ltd | 発光素子収納用パッケージ |
KR101764108B1 (ko) * | 2011-03-25 | 2017-08-02 | 엘지이노텍 주식회사 | 발광소자 패키지 및 조명시스템 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01283883A (ja) * | 1988-05-10 | 1989-11-15 | Matsushita Electric Ind Co Ltd | 発光ダイオードおよびその電極の形成方法 |
JP2001144333A (ja) * | 1999-11-10 | 2001-05-25 | Sharp Corp | 発光装置とその製造方法 |
JP2002094122A (ja) * | 2000-07-13 | 2002-03-29 | Matsushita Electric Works Ltd | 光源装置及びその製造方法 |
JP2002232017A (ja) * | 2001-01-30 | 2002-08-16 | Kyocera Corp | 発光素子収納用パッケージおよびその製造方法 |
JP2003046137A (ja) * | 2001-07-27 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
-
2009
- 2009-03-16 JP JP2009062963A patent/JP2009135535A/ja active Pending
- 2009-03-16 JP JP2009062964A patent/JP5173903B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01283883A (ja) * | 1988-05-10 | 1989-11-15 | Matsushita Electric Ind Co Ltd | 発光ダイオードおよびその電極の形成方法 |
JP2001144333A (ja) * | 1999-11-10 | 2001-05-25 | Sharp Corp | 発光装置とその製造方法 |
JP2002094122A (ja) * | 2000-07-13 | 2002-03-29 | Matsushita Electric Works Ltd | 光源装置及びその製造方法 |
JP2002232017A (ja) * | 2001-01-30 | 2002-08-16 | Kyocera Corp | 発光素子収納用パッケージおよびその製造方法 |
JP2003046137A (ja) * | 2001-07-27 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569540A (zh) * | 2010-12-25 | 2012-07-11 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
EP3016140A1 (en) | 2014-10-31 | 2016-05-04 | Nichia Corporation | Light emitting device and adaptive driving beam headlamp system |
US9722160B2 (en) | 2014-10-31 | 2017-08-01 | Nichia Corporation | Light emitting device and adaptive driving beam headlamp system |
US10256386B2 (en) | 2014-10-31 | 2019-04-09 | Nichia Corporation | Light emitting device and adaptive driving beam headlamp system |
US10468571B2 (en) | 2014-10-31 | 2019-11-05 | Nichia Corporation | Light distribution method for adaptive driving beam headlamp system, and adaptive driving beam headlamp system |
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Publication number | Publication date |
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JP2009135536A (ja) | 2009-06-18 |
JP5173903B2 (ja) | 2013-04-03 |
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