JP2009114365A - Silicone adhesive composition for optical semiconductor and optical semiconductor device using it - Google Patents

Silicone adhesive composition for optical semiconductor and optical semiconductor device using it Download PDF

Info

Publication number
JP2009114365A
JP2009114365A JP2007290485A JP2007290485A JP2009114365A JP 2009114365 A JP2009114365 A JP 2009114365A JP 2007290485 A JP2007290485 A JP 2007290485A JP 2007290485 A JP2007290485 A JP 2007290485A JP 2009114365 A JP2009114365 A JP 2009114365A
Authority
JP
Japan
Prior art keywords
sio
group
adhesive composition
silicone adhesive
optical semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007290485A
Other languages
Japanese (ja)
Inventor
Nobuo Hirai
信男 平井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Momentive Performance Materials Japan LLC
Momentive Performance Materials Inc
Original Assignee
Momentive Performance Materials Japan LLC
Momentive Performance Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Momentive Performance Materials Japan LLC, Momentive Performance Materials Inc filed Critical Momentive Performance Materials Japan LLC
Priority to JP2007290485A priority Critical patent/JP2009114365A/en
Publication of JP2009114365A publication Critical patent/JP2009114365A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

<P>PROBLEM TO BE SOLVED: To provide a silicone adhesive composition, which is excellent in adhesiveness, for an optical semiconductor and a highly reliable optical semiconductor device using the silicone adhesive composition. <P>SOLUTION: The silicone adhesive composition comprises (A) alkenyl group-containing polyorganosiloxane containing (A1) polyorganosiloxane having 50-3,000 ppm hydroxyl groups bonded to silicon atoms, having an SiO<SB>4/2</SB>unit, and having one or more alkenyl groups bonded to silicon atoms in a molecule on average, (B) polyorganohydrogen siloxane having three or more hydrogen atoms bonded to silicon atoms in a molecular, (C) a platinum-based catalyst, and (D) a tackifier. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、例えば発光ダイオード(LED)のような光半導体素子の接着剤として好適な光半導体用シリコーン接着剤組成物及びそれを用いた光半導体装置に関する。   The present invention relates to a silicone adhesive composition for an optical semiconductor suitable as an adhesive for an optical semiconductor element such as a light emitting diode (LED), and an optical semiconductor device using the same.

従来から、LEDなどの光半導体素子用の接着剤(ダイボンド材)として、エポキシ樹脂ベースの組成物が汎用されている。ダイボンド材が低硬度であると、LEDを支持基材にダイボンディングした後、リード電極からLEDのボンディングパッドにワイヤボンディングする際に、LEDが振動して、ボンディングワイヤとの接合性が低下しやすくなるため、一般に、高硬度のエポキシ樹脂ベースのダイボンド材が使用されている。   Conventionally, epoxy resin-based compositions have been widely used as adhesives (die bond materials) for optical semiconductor elements such as LEDs. If the die bond material has low hardness, when the LED is die-bonded to the support substrate and then wire-bonded from the lead electrode to the LED bonding pad, the LED vibrates and the bondability with the bonding wire is likely to deteriorate. Therefore, generally, a high-hardness epoxy resin-based die-bonding material is used.

しかし、エポキシ樹脂ベースのダイボンド材では、近年の半導体パッケージの小型化やLEDの高輝度化にともなう発熱量の増大や光の短波長化によって、クラッキングや黄変が発生しやすく、信頼性の低下を招いていた。   However, epoxy resin-based die-bonding materials are prone to cracking and yellowing due to increased heat generation and shorter light wavelengths due to the recent miniaturization of semiconductor packages and higher brightness of LEDs, resulting in lower reliability. Was invited.

そこで、耐熱性や耐紫外線特性に優れる点から、シリコーン組成物が使用されている。特に、ヒドロシリル化反応を利用した付加反応硬化型のシリコーン組成物は、加熱により短時間で硬化するため、生産性が良い。例えば特許文献1には、RSiO3/2単位(Rは1価炭化水素基)及び/又はSiO4/2単位を含み、ケイ素原子に結合したアルケニル基を有するシリコーンレジンを配合することで、高硬度の硬化物を与えるダイボンディング用のシリコーン組成物が提案されている。 Therefore, a silicone composition is used because it is excellent in heat resistance and ultraviolet resistance. In particular, an addition reaction curable silicone composition utilizing a hydrosilylation reaction is cured in a short time by heating, and thus has high productivity. For example, Patent Document 1 includes a silicone resin having an alkenyl group bonded to a silicon atom and containing R 8 SiO 3/2 units (R 8 is a monovalent hydrocarbon group) and / or SiO 4/2 units. Thus, a silicone composition for die bonding that gives a cured product with high hardness has been proposed.

しかしながら、従来の付加反応硬化型のシリコーン組成物では接着性が不十分であり、パッケージが高温ストレスや温度サイクルにさらされると、剥離が発生しやすい。
特開2006−342200号公報
However, the conventional addition reaction curable type silicone composition has insufficient adhesion, and peeling is likely to occur when the package is subjected to high temperature stress or a temperature cycle.
JP 2006-342200 A

本発明の目的は、このような課題に対処するためになされたもので、接着性に優れた光半導体用シリコーン接着剤組成物及びそれを用いた高信頼性の光半導体装置を提供することにある。   An object of the present invention is to address such problems, and to provide a silicone adhesive composition for optical semiconductors excellent in adhesiveness and a highly reliable optical semiconductor device using the same. is there.

本発明者らは、上記目的を達成するために鋭意検討した結果、ベースポリマーの(A)成分について、アルケニル基を含有し、水酸基を所定量導入したシリコーンレジンを配合することで、接着性に優れた光半導体用シリコーン接着剤組成物及びそれを用いた高信頼性の光半導体装置が得られることを見出し、本発明をなすに至った。   As a result of intensive studies to achieve the above-mentioned object, the inventors of the present invention have improved adhesiveness by incorporating a silicone resin containing an alkenyl group and a predetermined amount of hydroxyl groups into the component (A) of the base polymer. It has been found that an excellent silicone adhesive composition for optical semiconductors and a highly reliable optical semiconductor device using the same can be obtained, and the present invention has been made.

すなわち、本発明の光半導体用シリコーン接着剤組成物は、
(A)
(A1)ケイ素原子に結合する水酸基量が50〜3000ppmであり、1分子中にケイ素原子に結合したアルケニル基を平均1個以上有し、SiO4/2単位を有するポリオルガノシロキサン
を含むアルケニル基含有ポリオルガノシロキサン、
(B)1分子中にケイ素原子に結合した水素原子を3個以上有するポリオルガノハイドロジェンシロキサン、
(C)白金系触媒、
及び
(D)接着性付与剤
を含有することを特徴とする。
That is, the silicone adhesive composition for optical semiconductors of the present invention is
(A)
(A1) An alkenyl group containing a polyorganosiloxane having an average amount of one or more alkenyl groups bonded to a silicon atom in one molecule and a SiO 4/2 unit, wherein the amount of hydroxyl groups bonded to a silicon atom is 50 to 3000 ppm. Containing polyorganosiloxane,
(B) a polyorganohydrogensiloxane having three or more hydrogen atoms bonded to silicon atoms in one molecule;
(C) platinum-based catalyst,
And (D) an adhesiveness-imparting agent is contained.

また、本発明の光半導体装置は、光半導体用シリコーン接着剤組成物を硬化してなる光半導体用シリコーン接着剤により、光半導体素子と支持基材とが接合されていることを特徴とする。   In addition, the optical semiconductor device of the present invention is characterized in that the optical semiconductor element and the support base material are bonded to each other by a silicone adhesive for optical semiconductors obtained by curing a silicone adhesive composition for optical semiconductors.

上記構成により、接着性に優れた光半導体用シリコーン接着剤組成物及びそれを用いた高信頼性の光半導体装置を提供することができる。   By the said structure, the silicone adhesive composition for optical semiconductors excellent in adhesiveness and the highly reliable optical semiconductor device using the same can be provided.

以下、本発明の光半導体用シリコーン接着剤組成物について詳細に説明する。   Hereinafter, the silicone adhesive composition for optical semiconductors of the present invention will be described in detail.

[(A)成分]
(A)成分は、優れた接着性を組成物に与える、本発明の特徴を付与する成分である。
[(A) component]
(A) A component is a component which provides the characteristic of this invention which gives the outstanding adhesiveness to a composition.

(A)成分は、(A1)1分子中にケイ素原子に結合したアルケニル基を平均1個以上有し、SiO4/2単位を有する三次元網目状のポリオルガノシロキサンを含む。 The component (A) includes (A1) a three-dimensional network-like polyorganosiloxane having an average of one or more alkenyl groups bonded to silicon atoms in one molecule and having SiO 4/2 units.

(A1)は、平均単位式:
(R SiO1/2(R SiO1/2(R SiO2/2(RSiO2/2(SiO4/2
で表される。
(A1) is the average unit formula:
(R 1 3 SiO 1/2 ) a (R 1 2 R 2 SiO 1/2 ) b (R 1 2 SiO 2/2 ) c (R 1 R 2 SiO 2/2 ) d (SiO 4/2 ) e
It is represented by

式中、Rは、脂肪族不飽和結合を除く、互いに同じかもしくは異なる、置換もしくは非置換の1価炭化水素基である。Rとしては、例えばメチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ヘキシル基、シクロヘキシル基、オクチル基のようなアルキル基;フェニル基、トリル基のようなアリール基;ベンジル基、フェニルエチル基のようなアラルキル基;ならびにこれらの基の水素原子の少なくとも一部がフッ素、塩素、臭素などのハロゲン原子やシアノ基で置換された基、例えばクロロメチル基、2−ブロモエチル基、3−クロロプロピル基、クロロフェニル基、フルオロフェニル基、シアノエチル基等のハロゲン置換アルキル基、シアノ置換アルキル基、ハロゲン置換アリール基等が挙げられ、好ましくはアルキル基、アリール基であり、より好ましくはメチル基、フェニル基である。 In the formula, R 1 is a substituted or unsubstituted monovalent hydrocarbon group which is the same as or different from each other, excluding an aliphatic unsaturated bond. Examples of R 1 include alkyl groups such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, a hexyl group, a cyclohexyl group, and an octyl group; Aryl groups; aralkyl groups such as benzyl and phenylethyl groups; and groups in which at least some of the hydrogen atoms of these groups are substituted with halogen atoms such as fluorine, chlorine, bromine or cyano groups, such as chloromethyl groups , 2-bromoethyl group, 3-chloropropyl group, chlorophenyl group, fluorophenyl group, halogen-substituted alkyl group such as cyanoethyl group, cyano-substituted alkyl group, halogen-substituted aryl group, etc., preferably alkyl group, aryl group More preferably a methyl group or a phenyl group.

は、アルケニル基である。Rとしては、例えば、ビニル基、アリル基、ブテニル基、ペテニル基、ヘキセニル基などが挙げられ、好ましくは、ビニル基である。 R 2 is an alkenyl group. Examples of R 2 include a vinyl group, an allyl group, a butenyl group, a petenyl group, and a hexenyl group, and a vinyl group is preferable.

aは0又は正数であり、bは0又は正数であり、cは0又は正数であり、dは0又は正数であり、eは正数であり、0<(a+b)/e<2、好ましくは、0<(a+b)/e<1であり、0≦(c+d)/e<1、好ましくは0≦(c+d)/e<0.5であり、0.01<(b+d)/(a+b+c+d+e)<0.1、好ましくは0.02<(b+d)/(a+b+c+d+e)<0.1となる数である。   a is 0 or a positive number, b is 0 or a positive number, c is 0 or a positive number, d is 0 or a positive number, e is a positive number, and 0 <(a + b) / e <2, preferably 0 <(a + b) / e <1, 0 ≦ (c + d) / e <1, preferably 0 ≦ (c + d) / e <0.5, 0.01 <(b + d ) / (A + b + c + d + e) <0.1, preferably 0.02 <(b + d) / (a + b + c + d + e) <0.1.

(A1)としては、例えば、平均単位式:
[(CHSiO1/2][CH=CH(CHSiO1/2][SiO4/2
で表されるポリオルガノシロキサン、
平均単位式:
[(CHSiO1/2][CH=CH(CH)SiO2/2][SiO4/2
で表されるポリオルガノシロキサン、
平均単位式:
[CH=CH(CHSiO1/2][(CHSiO2/2][SiO4/2
で表されるポリオルガノシロキサンが挙げられる。
As (A1), for example, an average unit formula:
[(CH 3 ) 3 SiO 1/2 ] a [CH 2 ═CH (CH 3 ) 2 SiO 1/2 ] b [SiO 4/2 ] e
A polyorganosiloxane represented by
Average unit formula:
[(CH 3 ) 3 SiO 1/2 ] a [CH 2 ═CH (CH 3 ) SiO 2/2 ] d [SiO 4/2 ] e
A polyorganosiloxane represented by
Average unit formula:
[CH 2 = CH (CH 3 ) 2 SiO 1/2 ] b [(CH 3 ) 2 SiO 2/2 ] c [SiO 4/2 ] e
The polyorganosiloxane represented by these is mentioned.

式中、a、b、c、d、eは、前記と同じである。   In the formula, a, b, c, d and e are the same as described above.

さらに、(A1)は、ケイ素原子に結合した水酸基を有する。水酸基の結合位置は、制限されず、分子鎖末端のケイ素原子に結合していても、分子鎖途中のケイ素原子に結合していても、両者に結合していてもよいが、接着性の点から、少なくとも分子鎖末端のケイ素原子に結合していることが好ましい。   Furthermore, (A1) has a hydroxyl group bonded to a silicon atom. The bonding position of the hydroxyl group is not limited and may be bonded to the silicon atom at the end of the molecular chain, bonded to the silicon atom in the middle of the molecular chain, or bonded to both. From this, it is preferable that it is bonded to at least the silicon atom at the end of the molecular chain.

水酸基量は50〜3000ppm、好ましくは100〜2000ppmである。水酸基量が50ppm未満であると、接着性改善の十分な効果が得られない。一方、3000ppmを超えると、硬化速度の低下や硬化物の発泡が生じやすい。このような特定少量の水酸基を(A1)に導入することによって、組成物の接着性を著しく改善することができる。水酸基量を定量する方法としては、例えばKF法(カールフィッシャー法)を用いることができる。   The amount of hydroxyl groups is 50 to 3000 ppm, preferably 100 to 2000 ppm. If the amount of hydroxyl group is less than 50 ppm, sufficient effect of improving adhesiveness cannot be obtained. On the other hand, when it exceeds 3000 ppm, the curing rate is lowered and foaming of the cured product tends to occur. By introducing such a specific small amount of hydroxyl group into (A1), the adhesiveness of the composition can be remarkably improved. As a method for quantifying the amount of hydroxyl groups, for example, KF method (Karl Fischer method) can be used.

(A1)の製造方法としては、各単位源となる化合物を上述した割合で組み合わせた後、酸、アルカリの存在下で共加水分解する方法を用いることができる。   As a manufacturing method of (A1), after combining the compound used as each unit source in the ratio mentioned above, the method of cohydrolyzing in presence of an acid and an alkali can be used.

上記(A1)に加えて、(A)成分には、さらに、(A2)1分子中にケイ素原子に結合したアルケニル基を平均1個以上有する直鎖状のポリオルガノシロキサンを含有してもよい。アルケニル基の結合位置は、分子鎖末端のケイ素原子に結合していても、分子鎖途中のケイ素原子に結合していても、両者に結合していてもよいが、組成物の硬化速度、硬化物の物性の点から、少なくとも分子鎖末端のケイ素原子、特に、分子鎖両末端のケイ素原子に結合していることが好ましい。   In addition to the above (A1), the component (A) may further contain (A2) a linear polyorganosiloxane having an average of one or more alkenyl groups bonded to silicon atoms in one molecule. . The bonding position of the alkenyl group may be bonded to the silicon atom at the end of the molecular chain, or may be bonded to the silicon atom in the middle of the molecular chain, or may be bonded to both. From the viewpoint of the physical properties of the substance, it is preferable that it is bonded to at least the silicon atom at the molecular chain terminal, particularly the silicon atom at both molecular chain terminals.

(A2)のアルケニル基以外のケイ素原子に結合した有機基としては、例えば、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ヘキシル基、シクロヘキシル基、オクチル基のようなアルキル基;フェニル基、トリル基のようなアリール基;ベンジル基、フェニルエチル基のようなアラルキル基;ならびにこれらの基の水素原子の少なくとも一部がフッ素、塩素、臭素などのハロゲン原子やシアノ基で置換された基、例えばクロロメチル基、2−ブロモエチル基、3−クロロプロピル基、クロロフェニル基、フルオロフェニル基、シアノエチル基等のハロゲン置換アルキル基、シアノ置換アルキル基、ハロゲン置換アリール基等が挙げられ、好ましくはアルキル基、アリール基であり、より好ましくはメチル基、フェニル基である。   Examples of the organic group bonded to a silicon atom other than the alkenyl group in (A2) include, for example, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, a hexyl group, a cyclohexyl group, and an octyl group. An alkyl group such as a group; an aryl group such as a phenyl group and a tolyl group; an aralkyl group such as a benzyl group and a phenylethyl group; and at least a part of hydrogen atoms of these groups are halogens such as fluorine, chlorine and bromine Groups substituted with atoms or cyano groups, for example, halogen-substituted alkyl groups such as chloromethyl group, 2-bromoethyl group, 3-chloropropyl group, chlorophenyl group, fluorophenyl group, cyanoethyl group, cyano-substituted alkyl group, halogen-substituted aryl Group, etc., preferably an alkyl group or an aryl group, more preferably Or a methyl group or a phenyl group.

(A2)は、平均単位式:
(R SiO1/2(R SiO1/2(R SiO2/2(RSiO2/2
で表される。
(A2) is the average unit formula:
(R 1 3 SiO 1/2 ) f (R 1 2 R 2 SiO 1/2 ) g (R 1 2 SiO 2/2 ) h (R 1 R 2 SiO 2/2 ) i
It is represented by

式中、R及びRは、上記(A1)で上述したとおりである。 In the formula, R 1 and R 2 are as described above in (A1).

fは0又は正数であり、gは0又は正数であり、hは正数であり、iは0又は正数であり、0<(f+g)/(h+i)<0.25、好ましくは0.01<(f+g)/(h+i)<0.25であり、0.01<(g+i)/(f+g+h+i)、好ましくは0.01<(g+i)/(f+g+h+i)<1となる数である。   f is 0 or a positive number, g is 0 or a positive number, h is a positive number, i is 0 or a positive number, and 0 <(f + g) / (h + i) <0.25, preferably 0.01 <(f + g) / (h + i) <0.25, 0.01 <(g + i) / (f + g + h + i), preferably 0.01 <(g + i) / (f + g + h + i) <1 .

(A2)としては、例えば、平均単位式:
[CH=CH(CHSiO1/2][(CHSiO2/2]
で表されるポリオルガノシロキサン、
平均単位式:
[CH=CH(CHSiO1/2][(CHSiO2/2][CH=CH(CH)SiO2/2]
で表されるポリオルガノシロキサン、
平均単位式:
[(CHSiO1/2][(CHSiO2/2][CH=CH(CH)SiO2/2]
で表されるポリオルガノシロキサンが挙げられる。
As (A2), for example, an average unit formula:
[CH 2 = CH (CH 3 ) 2 SiO 1/2 ] g [(CH 3 ) 2 SiO 2/2 ] h
A polyorganosiloxane represented by
Average unit formula:
[CH 2 = CH (CH 3 ) 2 SiO 1/2 ] g [(CH 3 ) 2 SiO 2/2 ] h [CH 2 = CH (CH 3 ) SiO 2/2 ] i
A polyorganosiloxane represented by
Average unit formula:
[(CH 3 ) 3 SiO 1/2 ] f [(CH 3 ) 2 SiO 2/2 ] h [CH 2 ═CH (CH 3 ) SiO 2/2 ] i
The polyorganosiloxane represented by these is mentioned.

式中、f、g、h、iは、前記と同じである。   In the formula, f, g, h and i are the same as described above.

さらに、(A2)はケイ素原子に結合した水酸基を有する。水酸基の結合位置は、分子鎖末端のケイ素原子に結合していても、分子鎖途中のケイ素原子に結合していても、両者に結合していてもよいが、接着性の点から、少なくとも分子鎖末端のケイ素原子に結合していることが好ましい。   Furthermore, (A2) has a hydroxyl group bonded to a silicon atom. The bonding position of the hydroxyl group may be bonded to the silicon atom at the end of the molecular chain, or may be bonded to the silicon atom in the middle of the molecular chain, or may be bonded to both. Bonding to a silicon atom at the chain end is preferred.

水酸基量は50〜3000ppm、好ましくは100〜2000ppmである。50ppm未満であると、組成物の流動性が低下しやすい。一方、3000ppmを超えると、硬化速度の低下、硬化物の発砲、耐熱性の悪化等が生じ易い。このような特定少量の水酸基を導入することによって、組成物の接着性を著しく改善することができる。水酸基量を定量する方法としては、例えばKF法(カールフィッシャー法)が挙げられる。   The amount of hydroxyl groups is 50 to 3000 ppm, preferably 100 to 2000 ppm. If it is less than 50 ppm, the fluidity of the composition tends to decrease. On the other hand, when it exceeds 3000 ppm, a decrease in the curing rate, firing of a cured product, deterioration of heat resistance, and the like are likely to occur. By introducing such a specific small amount of hydroxyl group, the adhesiveness of the composition can be remarkably improved. Examples of the method for quantifying the amount of hydroxyl groups include the KF method (Karl Fischer method).

(A2)の製造方法としては、例えば、ヘキサメチルシクロトリシロキサン、オクタメチルシクロテトラシロキサン、テトラビニルテトラメチルシクロテトラシロキサン等の環状シロキサン、R SiO1/2(Rは1価炭化水素基)単位を有するオルガノシロキサン及び水をアルカリ、酸等の触媒で平衡化重合させた後、中和し、余剰の低分子シロキサンを除去する方法等が挙げられる。または、水を添加せずに平衡化重合を行った後、中和し、余剰の低分子シロキサンを除去し、この後、酸素下で一定時間加熱させて有機基を熱劣化させる方法等を用いてもよい。 Examples of the method for producing (A2) include cyclic siloxanes such as hexamethylcyclotrisiloxane, octamethylcyclotetrasiloxane, tetravinyltetramethylcyclotetrasiloxane, R 4 3 SiO 1/2 (R 4 is a monovalent hydrocarbon) For example, a method of equilibrating and polymerizing an organosiloxane having a group and water with a catalyst such as an alkali or an acid and then neutralizing to remove excess low-molecular-weight siloxane. Alternatively, after performing equilibration polymerization without adding water, neutralize, remove excess low-molecular siloxane, and then heat the organic group for a certain period of time under oxygen, etc. May be.

(A2)の23℃における粘度は、50〜5000mPa・sであり、好ましくは50〜4000mPa・sである。50mPa・s未満であると、硬化後の物性が低下しやすい。一方、5000mPa・sを超えると、組成物の流動性が低下して作業性が悪化しやすい。   The viscosity of (A2) at 23 ° C. is 50 to 5000 mPa · s, preferably 50 to 4000 mPa · s. If it is less than 50 mPa · s, the physical properties after curing tend to decrease. On the other hand, when it exceeds 5000 mPa · s, the fluidity of the composition is lowered and the workability is likely to deteriorate.

(A1)と(A2)の配合割合は、(A2)の配合量が(A)成分全体(100重量部)に対して0〜40重量部、好ましくは0〜30重量部となる量である。(A2)の配合量が40重量部を超えると、所望の硬度が得られない。   The blending ratio of (A1) and (A2) is such that the blending amount of (A2) is 0 to 40 parts by weight, preferably 0 to 30 parts by weight with respect to the entire component (A) (100 parts by weight). . When the blending amount of (A2) exceeds 40 parts by weight, desired hardness cannot be obtained.

[(B)成分]
(B)成分は架橋剤であり、1分子中にケイ素原子に結合した水素原子(Si−H基)を3個以上有するポリオルガノシロキサンである。1分子中のケイ素原子数は3〜400、好ましくは、4〜300である。
[Component (B)]
Component (B) is a cross-linking agent and is a polyorganosiloxane having 3 or more hydrogen atoms (Si—H groups) bonded to silicon atoms in one molecule. The number of silicon atoms in one molecule is 3 to 400, preferably 4 to 300.

(B)成分としては、平均組成式:
SiO[4−(p+q)]/2
で示されるものが用いられる。
As the component (B), an average composition formula:
R 7 pH q SiO [4- (p + q)] / 2
What is shown by is used.

式中、Rは、脂肪族不飽和炭化水素基を除く、置換または非置換の1価炭化水素基である。Rとしては、例えば、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ヘキシル基、シクロヘキシル基、オクチル基のようなアルキル基;フェニル基、トリル基のようなアリール基;ベンジル基、フェニルエチル基のようなアラルキル基;およびこれらの基の水素原子の一部または全部がフッ素、塩素、臭素などのハロゲン原子やシアノ基で置換されているもの、例えばクロロメチル基、ブロモエチル基、トリフルオロプロピル基、シアノエチル基などの炭素数1〜12の1価炭化水素基が挙げられ、なかでも、合成のし易さ、コストの点から、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基等の炭素数1〜4のアルキル基が好ましく、メチル基がより好ましい。 In the formula, R 7 is a substituted or unsubstituted monovalent hydrocarbon group excluding an aliphatic unsaturated hydrocarbon group. R 7 includes, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, a hexyl group, a cyclohexyl group, and an octyl group; Aryl groups such as; aralkyl groups such as benzyl and phenylethyl groups; and those in which some or all of the hydrogen atoms in these groups are substituted with halogen atoms such as fluorine, chlorine, bromine or cyano groups, Examples thereof include monovalent hydrocarbon groups having 1 to 12 carbon atoms such as chloromethyl group, bromoethyl group, trifluoropropyl group, and cyanoethyl group. Among them, from the viewpoint of ease of synthesis and cost, methyl group, ethyl group C1-C4 alkyl groups such as propyl group, isopropyl group, butyl group and isobutyl group are preferred, and methyl group is more preferred. .

p、qはそれぞれ正数であり、0.5≦p≦2、0<q≦2、0.5<p+q≦3を満足する数であり、好ましくは0.6≦p≦1.9、0.01≦q≦1.0、0.6≦p+q≦2.8を満足する数である。   p and q are positive numbers, respectively, satisfying 0.5 ≦ p ≦ 2, 0 <q ≦ 2, 0.5 <p + q ≦ 3, preferably 0.6 ≦ p ≦ 1.9, It is a number satisfying 0.01 ≦ q ≦ 1.0 and 0.6 ≦ p + q ≦ 2.8.

水素原子の結合位置は、分子鎖末端のケイ素原子に結合していても、分子鎖途中のケイ素原子に結合していても、両者に結合していてもよい。   The bonding position of the hydrogen atom may be bonded to the silicon atom at the end of the molecular chain, may be bonded to the silicon atom in the middle of the molecular chain, or may be bonded to both.

(B)成分の分子構造は、直鎖状、分岐鎖状、環状あるいは三次元網目状のいずれでもよい。   The molecular structure of the component (B) may be any of linear, branched, cyclic or three-dimensional network.

(B)成分の23℃における粘度は、1000mPa・s以下、好ましくは1〜500mPa・sである。   (B) The viscosity in 23 degreeC of a component is 1000 mPa * s or less, Preferably it is 1-500 mPa * s.

(B)成分の配合量は、(A)成分のケイ素原子に結合したアルケニル基の合計((A1)のケイ素原子に結合したアルケニル基と(A2)のケイ素原子に結合したアルケニル基との合計)1モルに対して、ケイ素原子に結合した水素基(Si−H基)が0.5〜5.0モルとなる量、好ましくは0.5〜3モルとなる量である。0.5モル未満であると、十分な架橋が得られない。一方、5.0モルを越えると、未反応のSi−H基が残存し、硬化後の物性が経時で変化し易くなる。   The blending amount of component (B) is the sum of alkenyl groups bonded to silicon atoms in component (A) (total of alkenyl groups bonded to silicon atoms in (A1) and alkenyl groups bonded to silicon atoms in (A2). ) The amount of hydrogen groups bonded to silicon atoms (Si-H groups) is 0.5 to 5.0 moles, preferably 0.5 to 3 moles per mole. If the amount is less than 0.5 mol, sufficient crosslinking cannot be obtained. On the other hand, when the amount exceeds 5.0 mol, unreacted Si-H groups remain, and the physical properties after curing tend to change with time.

[(C)成分]
(C)成分の白金系触媒は、組成物の硬化を促進させる成分である。
[Component (C)]
(C) The platinum-type catalyst of a component is a component which accelerates | stimulates hardening of a composition.

(C)成分としては、ヒドロシリル化反応に用いられる触媒として周知の触媒を用いることができ、例えば白金黒、塩化第2白金、塩化白金酸、塩化白金酸と1価アルコールとの反応物、塩化白金酸とオレフィン類やビニルシロキサンとの錯体、白金ビスアセトアセテート等が挙げられる。   As the component (C), a catalyst known as a catalyst used in the hydrosilylation reaction can be used. For example, platinum black, platinous chloride, chloroplatinic acid, a reaction product of chloroplatinic acid and a monohydric alcohol, chloride Examples include complexes of platinum acid with olefins and vinyl siloxane, platinum bisacetoacetate, and the like.

(C)成分の配合量は、硬化に必要な量であればよく、所望の硬化速度などに応じて適宜調整することができる。通常、(A)成分100重量部に対し白金元素に換算して0.1〜1000ppm、好ましくは1〜200ppmの範囲である。   The blending amount of the component (C) may be an amount necessary for curing, and can be appropriately adjusted according to a desired curing rate. Usually, it is 0.1 to 1000 ppm, preferably 1 to 200 ppm in terms of platinum element with respect to 100 parts by weight of component (A).

[(D)成分]
(D)成分は、組成物に接着性を付与する成分であり、公知のものを使用できる。
[(D) component]
(D) component is a component which provides adhesiveness to a composition, and can use a well-known thing.

(D)成分は、オルガノシラン、またはケイ素原子数2〜50個、好ましくは4〜20個のオルガノシロキサンオリゴマー等の有機ケイ素化合物である。このような有機ケイ素化合物は、ケイ素原子に結合したアルコキシ基、ケイ素原子に結合したアルケニルオキシ基、Si−H基、アルケニル基、アクリル基、メタクリル基、エポキシ基、メルカプト基、エステル基、無水カルボキシ基、アミノ基及びアミド基から選ばれる少なくとも1個の反応性官能基を有することが好ましい。これらは1種単独または2種以上を併用してもよい。   Component (D) is an organosilicon compound such as organosilane or an organosiloxane oligomer having 2 to 50, preferably 4 to 20, silicon atoms. Such organosilicon compounds include alkoxy groups bonded to silicon atoms, alkenyloxy groups bonded to silicon atoms, Si-H groups, alkenyl groups, acrylic groups, methacrylic groups, epoxy groups, mercapto groups, ester groups, anhydrous carboxy groups. It preferably has at least one reactive functional group selected from a group, an amino group and an amide group. These may be used alone or in combination of two or more.

(D)成分としては、例えば、γ−グリシドキシプロピルトリメトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン等のエポキシ官能性基含有アルコキシシラン、ビニルトリメトキシシラン、ビニルトリエトキシシラン、ビニルトリ(メトキシエトキシ)シラン等のアルケニル基含有アルコキシシラン、γ−アミノプロピルトリメトキシシラン、γ−アミノプロピルトリエトキシシラン、N−β(アミノエチル)−γ−アミノプロピルトリメトキシシラン、N−β(アミノエチル)−γ−アミノプロピルメチルジメトキシシラン、N−フェニル−γ−アミノプロピルトリメトキシシラン等のアミノ基含有アルコキシシラン、γ−メタクリロキシプロピルトリメトキシシラン、γ−アクリロキシプロピルトリメトキシシラン等のアクリル基又はメタクリル基含有アルコキシシラン、メルカプトプロピルトリメトキシシラン等のメルカプト基含有アルコキシシランなどのアルコキシシランが挙げられる。また、オルガノシロキサンオリゴマーとしては、下記のような化合物が挙げられる。

Figure 2009114365
Figure 2009114365
Figure 2009114365
Examples of the component (D) include alkoxy-functional group-containing alkoxysilanes such as γ-glycidoxypropyltrimethoxysilane and β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, vinyltrimethoxysilane, and vinyltrimethoxysilane. Alkenyl group-containing alkoxysilanes such as ethoxysilane and vinyltri (methoxyethoxy) silane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-β (aminoethyl) -γ-aminopropyltrimethoxysilane, N -Β (aminoethyl) -γ-aminopropylmethyldimethoxysilane, amino group-containing alkoxysilanes such as N-phenyl-γ-aminopropyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-acryloxypropyltrimethoxy Shi Examples include alkoxy silanes such as acrylic or methacrylic group-containing alkoxysilanes such as orchid and mercapto group-containing alkoxysilanes such as mercaptopropyltrimethoxysilane. In addition, examples of the organosiloxane oligomer include the following compounds.
Figure 2009114365
Figure 2009114365
Figure 2009114365

(D)成分の配合量は、(A)成分100重量部に対して0.3〜20重量部、好ましくは0.3〜10重量部である。配合量が0.3重量部未満では、十分な接着性が得られない。一方、20重量部を越えると、コストの点で不経済である。   (D) The compounding quantity of component is 0.3-20 weight part with respect to 100 weight part of (A) component, Preferably it is 0.3-10 weight part. If the blending amount is less than 0.3 parts by weight, sufficient adhesion cannot be obtained. On the other hand, exceeding 20 parts by weight is uneconomical in terms of cost.

[その他任意成分]
上記(A)〜(D)成分を基本成分とし、これらに必要に応じて、その他の任意成分として反応抑制剤、補強性充填剤、金属粉末などの導電性付与剤、染料、顔料、難燃性付与剤、耐熱性向上剤、耐酸化劣化剤、溶剤等を本発明の目的を損なわない範囲で添加してもよい。
[Other optional ingredients]
The above components (A) to (D) are the basic components, and as necessary, other optional components such as reaction inhibitors, reinforcing fillers, conductivity imparting agents such as metal powders, dyes, pigments, flame retardants A property-imparting agent, a heat resistance improver, an oxidation-resistant deterioration agent, a solvent, and the like may be added as long as the object of the present invention is not impaired.

本発明の光半導体用シリコーン接着剤組成物の製造方法としては、各成分の添加順序は特に限定されるものではなく、(A)〜(D)の基本成分と上述した任意成分を周知の混練機で混練する方法等が挙げられる。また、2液に分けて保存し、使用時にこの2液を混合して用いてもよく、この場合には、(A)成分の一部と(C)成分を混合したものを(I)液とし、残りの(A)成分、(B)成分、(D)成分及びその他任意成分(例えば反応抑制剤など)を混合したものを(II)液とし、(I)液と(II)液を混合することもできる。混練機としては、必要に応じて加熱手段及び冷却手段を備えた例えばプラネタリーミキサー、3本ロール、ニーダー、品川ミキサー等が挙げられ、単独またはこれらを組み合わせて使用することができる。   As a manufacturing method of the silicone adhesive composition for optical semiconductors of this invention, the addition order of each component is not specifically limited, The basic component of (A)-(D) and the arbitrary component mentioned above are known kneading | mixing. Examples thereof include a kneading method using a machine. In addition, the two liquids may be stored separately and used at the time of use. In this case, a mixture of a part of the component (A) and the component (C) is used as the liquid (I). The mixture of the remaining component (A), component (B), component (D) and other optional components (such as a reaction inhibitor) is used as solution (II), and solution (I) and solution (II) are combined. It can also be mixed. Examples of the kneader include a planetary mixer, a three-roller, a kneader, and a Shinagawa mixer, which are provided with a heating unit and a cooling unit, if necessary, and these can be used alone or in combination.

光半導体用シリコーン接着剤組成物は液状であり、23℃における粘度は1〜100Pa・sであることが好ましい。粘度が100Pa・sを超えると、塗布する際にシリンジの目詰まりを生じやすい。一方、1Pa・s未満であると、塗布する際に液ダレを起しやすい。   The silicone adhesive composition for optical semiconductors is liquid and preferably has a viscosity at 23 ° C. of 1 to 100 Pa · s. When the viscosity exceeds 100 Pa · s, the syringe is likely to be clogged during application. On the other hand, if it is less than 1 Pa · s, dripping is likely to occur during coating.

光半導体用シリコーン接着剤組成物の硬化方法は、特に限定されず、室温もしくは50〜200℃で加熱により硬化が進行するが、迅速に硬化させるためには加熱することが好ましい。加熱する場合、加熱時間は、加熱温度に応じて適宜調整することができる。硬化物は、透明な硬質のゴム状もしくは可撓性を有するレジン状である。   The curing method of the silicone adhesive composition for optical semiconductors is not particularly limited, and curing proceeds by heating at room temperature or 50 to 200 ° C. However, heating is preferable for rapid curing. In the case of heating, the heating time can be appropriately adjusted according to the heating temperature. The cured product is a transparent hard rubber or flexible resin.

硬化後の硬度(ショアD)は、40以上、好ましくは45〜90である。硬度が40未満であると、LEDなどの光半導体素子を本組成物でダイボンディングした後、LEDとリード電極とをワイヤボンディングする際に、LEDが振動して、ボンディングワイヤとの接合性が低下しやすくなる。   The hardness (Shore D) after curing is 40 or more, preferably 45 to 90. If the hardness is less than 40, the LED vibrates when the LED and the lead electrode are wire-bonded after the optical semiconductor element such as the LED is die-bonded with the composition, and the bondability with the bonding wire is lowered. It becomes easy to do.

次に、本発明の光半導体装置について図面を参照して説明する。図1は、本発明に係る光半導体装置の一例を示す断面図であり、LEDランプを示している。   Next, the optical semiconductor device of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing an example of an optical semiconductor device according to the present invention, and shows an LED lamp.

光半導体装置1は、リード電極4と、略中央にテーパー状の開口部を有する支持基材2と、光半導体素子(LED)3と、封止樹脂7と、を備えている。支持基材2としては、ポリフタルアミド樹脂、セラミックスなどを用いることができる。   The optical semiconductor device 1 includes a lead electrode 4, a support base 2 having a tapered opening at a substantially center, an optical semiconductor element (LED) 3, and a sealing resin 7. As the support substrate 2, polyphthalamide resin, ceramics, or the like can be used.

光半導体素子(LED)3は、リード電極4を有する支持基材2に本組成物の硬化物であるシリコーン接着剤5によってダイボンディングされている。また、光半導体素子3に設けられたボンディングパッド(不図示)とリード電極4とがボンディングワイヤ6で電気的に接続されており、これらの一体化物が封止樹脂7で封止されている。   An optical semiconductor element (LED) 3 is die-bonded to a support base 2 having a lead electrode 4 with a silicone adhesive 5 that is a cured product of the present composition. Also, a bonding pad (not shown) provided on the optical semiconductor element 3 and the lead electrode 4 are electrically connected by a bonding wire 6, and an integrated product thereof is sealed with a sealing resin 7.

光半導体素子(LED)3をダイボンディングする方法の一例としては、上述した光半導体用シリコーン接着剤組成物をシリンジに充填し、リード電極4を有する支持基材2に10〜100μmの厚さとなるように塗布した後、塗布した組成物上に光半導体素子3を配置し、該組成物を硬化させる。   As an example of a method for die-bonding the optical semiconductor element (LED) 3, the syringe is filled with the above-described silicone adhesive composition for optical semiconductors, and the support base 2 having the lead electrode 4 has a thickness of 10 to 100 μm. After the application, the optical semiconductor element 3 is placed on the applied composition, and the composition is cured.

なお、上記実施形態では、光半導体素子2の一例としてLEDを用いて説明したが、これ以外に、例えばフォトトランジスタ、フォトダイオード、CCD、太陽電池モジュール、EPROM、フォトカプラなどに適用することもできる。   In the above-described embodiment, the LED is described as an example of the optical semiconductor element 2, but other than this, for example, it can be applied to a phototransistor, a photodiode, a CCD, a solar cell module, an EPROM, a photocoupler, and the like. .

本発明を実施例により詳細に説明するが、本発明は実施例に限定されるものではない。実施例及び比較例中、粘度は23℃において測定した値である。また、実施例及び比較例で得られた光半導体用シリコーン接着剤組成物は、以下のようにして特性を評価し、結果を表1に示した。表1に示した特性は、23℃において測定した値である。   The present invention will be described in detail with reference to examples, but the present invention is not limited to the examples. In the examples and comparative examples, the viscosity is a value measured at 23 ° C. Moreover, the characteristics of the silicone adhesive compositions for optical semiconductors obtained in Examples and Comparative Examples were evaluated as follows, and the results are shown in Table 1. The characteristics shown in Table 1 are values measured at 23 ° C.

[硬度]
得られた光半導体用シリコーン接着剤組成物を20mm×60mm×60mmの金型に流し込み、150℃で60分間加熱してテストピースを作製した。これをショアD硬度計(アスカー社製)により測定した。
[hardness]
The obtained silicone adhesive composition for optical semiconductors was poured into a 20 mm × 60 mm × 60 mm mold and heated at 150 ° C. for 60 minutes to prepare a test piece. This was measured with a Shore D hardness meter (manufactured by Asker).

[せん断接着力]
JIS K 6249に準じて、測定した。すなわち、図2に示すように、幅25mmの長方形状のセラミック板11,12の各々の片末端を厚さ1mmの光半導体用シリコーン接着剤組成物13を挟む形で張り合わせ(接着面積:25mm×10mm=2.5cm)、150℃で1時間加熱硬化させてテストピースを作製した。このテストピースのそれぞれの端部を図中の矢印方向に、引っ張り試験機(島津製作所製、オートグラフ)で引張速度10mm/分で引っ張り、セラミック板11,12表面のせん断接着力を測定した。
[Shear adhesive strength]
Measurement was performed according to JIS K 6249. That is, as shown in FIG. 2, one end of each of rectangular ceramic plates 11 and 12 having a width of 25 mm is bonded to each other with a silicone adhesive composition 13 for an optical semiconductor having a thickness of 1 mm sandwiched (adhesion area: 25 mm × 10 mm = 2.5 cm 2 ) and heat cured at 150 ° C. for 1 hour to prepare a test piece. Each end of the test piece was pulled in the direction of the arrow in the drawing with a tensile tester (manufactured by Shimadzu Corporation, Autograph) at a pulling speed of 10 mm / min, and the shear adhesive force on the surfaces of the ceramic plates 11 and 12 was measured.

[(A1−1)水酸基を含むシリコーンレジンの合成例]
攪拌装置、温度計と還流冷却器を備えた4つ口フラスコに、ジメチルビニルメトキシシラン116g、トリメチルメトキシシラン550g、テトラメトキシシラン1216g、トルエン900gを投入し、均一に混合した後、6N-NaOHを1.5gと水370gを混ぜ合わせたものを滴下し、メタノールの還流温度で1時間攪拌した、その後、トルエン1100gを加え、還流管を留出系に切り替えた後、100℃まで加熱してメタノールを留去した。次いで、室温まで冷却し、酢酸1gを加えて混合し、不純物をろ過した後、ポリオルガノシロキサンのトルエン溶液を得た。
この合成により、式:
[(CHSiO1/25.3[(CH=CH)(CHSiO1/2][SiO4/2
で表され、Si−OH基を含むポリオルガノシロキサン(A1−1)を得た。このポリオルガノシロキサンは、カールフィッシャー法(KF法)により測定した水酸基量が200ppmであった。
なお、水酸基量の測定は、カールフィッシャー法自動水分測定装置(KF−06型、三菱化成(株)製)で、KF試薬(カールフィッシャー試薬SS、(株)エーピーアイコーポレーション製)を使用し、脱水溶剤(CM50mlとML10ml、(株)エーピーアイコーポレーション製)を用いて水分量を測定し、この水分量から水酸基量を計算することによって測定を行った。
[Synthesis Example of Silicone Resin Containing (A1-1) Hydroxyl Group]
Into a four-necked flask equipped with a stirrer, thermometer and reflux condenser, 116 g of dimethylvinylmethoxysilane, 550 g of trimethylmethoxysilane, 1216 g of tetramethoxysilane, and 900 g of toluene were added and mixed uniformly, and then 6N-NaOH was added. A mixture of 1.5 g and 370 g of water was added dropwise, and the mixture was stirred at the reflux temperature of methanol for 1 hour. After that, 1100 g of toluene was added and the reflux tube was switched to a distillation system. Was distilled off. Next, the mixture was cooled to room temperature, 1 g of acetic acid was added and mixed, and the impurities were filtered out to obtain a toluene solution of polyorganosiloxane.
This synthesis results in the formula:
[(CH 3 ) 3 SiO 1/2 ] 5.3 [(CH 2 ═CH) (CH 3 ) 2 SiO 1/2 ] [SiO 4/2 ] 8
And a polyorganosiloxane (A1-1) containing a Si—OH group was obtained. This polyorganosiloxane had a hydroxyl content of 200 ppm as measured by the Karl Fischer method (KF method).
In addition, the measurement of the amount of hydroxyl groups is a Karl Fischer method automatic moisture measuring device (KF-06 type, manufactured by Mitsubishi Kasei Co., Ltd.) using a KF reagent (Karl Fischer reagent SS, manufactured by API Corporation). The amount of water was measured using a dehydrating solvent (CM 50 ml and ML 10 ml, manufactured by API Corporation), and the hydroxyl amount was calculated from the amount of water.

[(A1−2)水酸基を含まないシリコーンレジンの合成例]
攪拌装置、温度計と還流冷却器を備えた4つ口フラスコに、ビニルメチルジメトキシシラン132g、トリメチルメトキシシラン603g、テトラトリメトキシシラン1216g、トルエン900gを投入し、均一に混合した後、6N-NaOHを1.5gと水370gを混ぜ合わせたものを滴下し、メタノールの還流温度で1時間攪拌した、その後、トルエン1100gを加え、還流管を留出系に切り替えた後、100℃まで加熱してメタノールを留去した。次いで、トリメチルクロロシラン、ヘキサメチルジシラザンを添加し、加熱攪拌を行い、不純物をろ過した後、ポリオルガノシロキサンのトルエン溶液を得た。
この合成により、式:
[(CHSiO1/25.8[(CH=CH)(CH)SiO2/2][SiO4/28.3
で表されるポリオルガノシロキサン(A1−2)を得た。
[(A1-2) Synthesis example of silicone resin containing no hydroxyl group]
A four-necked flask equipped with a stirrer, a thermometer and a reflux condenser was charged with 132 g of vinylmethyldimethoxysilane, 603 g of trimethylmethoxysilane, 1216 g of tetratrimethoxysilane, and 900 g of toluene, and after mixing uniformly, 6N-NaOH A mixture of 1.5 g and 370 g of water was added dropwise and stirred at the reflux temperature of methanol for 1 hour. After that, 1100 g of toluene was added, the reflux tube was switched to a distillation system, and then heated to 100 ° C. Methanol was distilled off. Subsequently, trimethylchlorosilane and hexamethyldisilazane were added, the mixture was heated and stirred, and impurities were filtered out to obtain a toluene solution of polyorganosiloxane.
This synthesis results in the formula:
[(CH 3 ) 3 SiO 1/2 ] 5.8 [(CH 2 ═CH) (CH 3 ) SiO 2/2 ] [SiO 4/2 ] 8.3
The polyorganosiloxane (A1-2) represented by these was obtained.

[(A2−1)水酸基を含む直鎖状のアルケニル基含有ポリオルガノシロキサンの合成例]
攪拌装置、温度計と還流冷却器を備えた4つ口フラスコに、1,3−ジメチルテトラメチルシロキサン18.6g、オクタメチルシクロテトラシロキサン555g、1,3,5,7−テトラビニルテトラメチルシロキサン210gを投入し、水酸化カリウムによるアルカリ平衡化を行った。その後、酸による中和、初留の留去を経て、ポリオルガノシロキサンを得た。
この合成により、式:
[(CH=CH)(CHSiO1/2[(CHSiO2/275[(CH=CH)(CH)SiO2/225
で表され、Si−OH基を含むポリオルガノシロキサン(A2−1)を得た。このポリオルガノシロキサンは、カールフィッシャー法(KF法)により測定した水酸基量が320ppmであった。
なお、水酸基量の測定は、カールフィッシャー法自動水分測定装置(KF−06型、三菱化成(株)製)で、KF試薬(カールフィッシャー試薬SS、(株)エーピーアイコーポレーション製)を使用し、脱水溶剤(CM50mlとML10ml、(株)エーピーアイコーポレーション製)を用いて水分量を測定し、この水分量から水酸基量を計算することによって測定を行った。
[(A2-1) Synthesis example of linear alkenyl group-containing polyorganosiloxane containing hydroxyl group]
In a four-necked flask equipped with a stirrer, thermometer and reflux condenser, 18.6 g of 1,3-dimethyltetramethylsiloxane, 555 g of octamethylcyclotetrasiloxane, 1,3,5,7-tetravinyltetramethylsiloxane 210 g was added and alkali equilibration with potassium hydroxide was performed. Then, polyorganosiloxane was obtained through neutralization with acid and distillation of the first fraction.
This synthesis results in the formula:
[(CH 2 = CH) (CH 3 ) 2 SiO 1/2 ] 2 [(CH 3 ) 2 SiO 2/2 ] 75 [(CH 2 = CH) (CH 3 ) SiO 2/2 ] 25
And a polyorganosiloxane (A2-1) containing a Si—OH group was obtained. This polyorganosiloxane had a hydroxyl group content of 320 ppm as measured by the Karl Fischer method (KF method).
In addition, the measurement of the amount of hydroxyl groups is a Karl Fischer method automatic moisture measuring device (KF-06 type, manufactured by Mitsubishi Kasei Co., Ltd.) using a KF reagent (Karl Fischer reagent SS, manufactured by API Corporation), The amount of water was measured using a dehydrating solvent (CM 50 ml and ML 10 ml, manufactured by API Corporation), and the hydroxyl amount was calculated from the amount of water.

[実施例1]
(A1−1)水酸基量が200ppmであり、式:
[(CHSiO1/25.3[(CH=CH)(CHSiO1/2][SiO4/2
で表されるポリオルガノシロキサン(ビニル基量1mmol/g)80重量部、(A2−1)水酸基量が320ppm、粘度が0.25mPa・sであり、式:
[(CH=CH)(CHSiO1/2[(CHSiO2/275[(CH=CH)(CH)SiO2/225
で表され、ビニル基を含有したポリオルガノシロキサン(ビニル基量2mmol/g)20重量部、(B)粘度が0.02Pa・sであり、式:
[(CHSiO1/2][(CH)HSiO2/220[(CHSiO2/220[(CHSiO1/2
で表されるポリオルガノハイドロジェンシロキサン(Si−H基量7.5mmol/g)20重量部、(C)塩化白金酸のビニルシロキサン錯体化合物0.02重量部(白金元素に換算して4ppm)、(D−1)γ−グリシドキシプロピルトリメトキシシラン0.2重量部、(D−2)β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン0.4重量部、(D−3)式:

Figure 2009114365
で表されるオルガノシロキサンオリゴマー1.0重量部をプラネタリーミキサーで均一に混練して、光半導体用シリコーン接着剤組成物を得た。
この組成物の特性を測定し、結果を表1に示した。 [Example 1]
(A1-1) The amount of hydroxyl groups is 200 ppm, and the formula:
[(CH 3 ) 3 SiO 1/2 ] 5.3 [(CH 2 ═CH) (CH 3 ) 2 SiO 1/2 ] [SiO 4/2 ] 8
80 parts by weight of polyorganosiloxane (vinyl group content 1 mmol / g), (A2-1) hydroxyl group content 320 ppm, viscosity 0.25 mPa · s, formula:
[(CH 2 = CH) (CH 3 ) 2 SiO 1/2 ] 2 [(CH 3 ) 2 SiO 2/2 ] 75 [(CH 2 = CH) (CH 3 ) SiO 2/2 ] 25
And 20 parts by weight of a polyorganosiloxane containing vinyl groups (vinyl group content 2 mmol / g), (B) viscosity is 0.02 Pa · s, and the formula:
[(CH 3 ) 3 SiO 1/2 ] [(CH 3 ) HSiO 2/2 ] 20 [(CH 3 ) 2 SiO 2/2 ] 20 [(CH 3 ) 3 SiO 1/2 ]
20 parts by weight of a polyorganohydrogensiloxane represented by formula (Si-H group content 7.5 mmol / g), (C) 0.02 part by weight of a vinylsiloxane complex compound of chloroplatinic acid (4 ppm in terms of platinum element) (D-1) 0.2 part by weight of γ-glycidoxypropyltrimethoxysilane, (D-2) 0.4 part by weight of β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, (D-3) )formula:
Figure 2009114365
A silicone adhesive composition for an optical semiconductor was obtained by uniformly kneading 1.0 part by weight of an organosiloxane oligomer represented by
The properties of this composition were measured and the results are shown in Table 1.

[実施例2]
(A1−1)水酸基量が200ppmであり、式:
[(CHSiO1/25.3[(CH=CH)(CHSiO1/2][SiO4/2
で表されるポリオルガノシロキサン(ビニル基量1mmol/g)100重量部、(B)粘度が0.02Pa・sであり、式:
[(CHSiO1/2][(CH)HSiO2/220[(CHSiO2/220[(CHSiO1/2
で表されるポリオルガノハイドロジェンシロキサン(Si−H基量7.5mmol/g)11重量部、(C)塩化白金酸のビニルシロキサン錯体化合物0.02重量部(白金元素に換算して4ppm)、(D−1)γ−グリシドキシプロピルトリメトキシシラン0.2重量部、(D−2)β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン0.4重量部、(D−3)式:

Figure 2009114365
で表されるオルガノシロキサンオリゴマー1.0重量部をプラネタリーミキサーで均一に混練して、光半導体用シリコーン接着剤組成物を得た。
この組成物の特性を測定し、結果を表1に示した。 [Example 2]
(A1-1) The amount of hydroxyl groups is 200 ppm, and the formula:
[(CH 3 ) 3 SiO 1/2 ] 5.3 [(CH 2 ═CH) (CH 3 ) 2 SiO 1/2 ] [SiO 4/2 ] 8
100 parts by weight of a polyorganosiloxane represented by the formula (vinyl group content 1 mmol / g), (B) the viscosity is 0.02 Pa · s, and the formula:
[(CH 3 ) 3 SiO 1/2 ] [(CH 3 ) HSiO 2/2 ] 20 [(CH 3 ) 2 SiO 2/2 ] 20 [(CH 3 ) 3 SiO 1/2 ]
11 parts by weight of a polyorganohydrogensiloxane represented by formula (Si-H group content 7.5 mmol / g), (C) 0.02 part by weight of a vinylsiloxane complex compound of chloroplatinic acid (4 ppm in terms of platinum element) (D-1) 0.2 part by weight of γ-glycidoxypropyltrimethoxysilane, (D-2) 0.4 part by weight of β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, (D-3) )formula:
Figure 2009114365
A silicone adhesive composition for an optical semiconductor was obtained by uniformly kneading 1.0 part by weight of an organosiloxane oligomer represented by
The properties of this composition were measured and the results are shown in Table 1.

[比較例1]
(A1−2)式:
[(CHSiO1/25.8[(CH=CH)(CH)SiO2/2][SiO4/28.3
で表されるポリオルガノシロキサン(ビニル基量1mmol/g)80重量部、(A2−2)粘度が0.3Pa・sであり、式:
[(CH=CH)(CHSiO1/2[(CHSiO2/2120
で表され、ビニル基を含有したポリオルガノシロキサン(ビニル基量0.08mmol/g)20重量部、(B)粘度が0.02Pa・sであり、式:
[(CHSiO1/2][(CH)HSiO2/220[(CHSiO2/220[(CHSiO1/2
で表されるポリオルガノハイドロジェンシロキサン(Si−H基量7.5mmol/g)15重量部、(C)塩化白金酸のビニルシロキサン錯体化合物0.02重量部(白金元素に換算して4ppm)、(D−1)γ−グリシドキシプロピルトリメトキシシラン0.2重量部、(D−2)β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン0.4重量部、(D−3)式:

Figure 2009114365
で表されるオルガノシロキサンオリゴマー1.0重量部をプラネタリーミキサーで均一に混練して、光半導体用シリコーン接着剤組成物を得た。
この組成物の特性を測定し、結果を表1に示した。 [Comparative Example 1]
(A1-2) Formula:
[(CH 3 ) 3 SiO 1/2 ] 5.8 [(CH 2 ═CH) (CH 3 ) SiO 2/2 ] [SiO 4/2 ] 8.3
80 parts by weight of a polyorganosiloxane (vinyl group content: 1 mmol / g), (A2-2) viscosity is 0.3 Pa · s, and the formula:
[(CH 2 = CH) (CH 3 ) 2 SiO 1/2 ] 2 [(CH 3 ) 2 SiO 2/2 ] 120
And 20 parts by weight of a polyorganosiloxane containing vinyl groups (vinyl group content 0.08 mmol / g), (B) the viscosity is 0.02 Pa · s, and the formula:
[(CH 3 ) 3 SiO 1/2 ] [(CH 3 ) HSiO 2/2 ] 20 [(CH 3 ) 2 SiO 2/2 ] 20 [(CH 3 ) 3 SiO 1/2 ]
15 parts by weight of a polyorganohydrogensiloxane represented by formula (Si-H group content 7.5 mmol / g), (C) 0.02 part by weight of a vinyl siloxane complex compound of chloroplatinic acid (4 ppm in terms of platinum element) (D-1) 0.2 part by weight of γ-glycidoxypropyltrimethoxysilane, (D-2) 0.4 part by weight of β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, (D-3) )formula:
Figure 2009114365
A silicone adhesive composition for an optical semiconductor was obtained by uniformly kneading 1.0 part by weight of an organosiloxane oligomer represented by
The properties of this composition were measured and the results are shown in Table 1.

Figure 2009114365
Figure 2009114365

表1から明らかなように、(A)成分として、(A1−1)水酸基を所定量導入したシリコーンレジンを配合した実施例は、比較例と比べて接着性に優れている。   As is clear from Table 1, the example in which (A1-1) a silicone resin into which a predetermined amount of hydroxyl group was introduced was blended as the component (A) was superior in adhesiveness to the comparative example.

よって、本発明の光半導体用シリコーン接着剤組成物は、接着性が著しく改善されており、例えばLEDのような光半導体素子のダイボンド材として好適である。   Accordingly, the silicone adhesive composition for optical semiconductors of the present invention has remarkably improved adhesiveness and is suitable as a die bond material for optical semiconductor elements such as LEDs.

本発明の光半導体装置の一例を模式的に示す断面図。Sectional drawing which shows an example of the optical semiconductor device of this invention typically. せん断接着力の測定に用いたテストピースと試験条件を示す略図。The schematic diagram which shows the test piece and test condition which were used for the measurement of shear adhesive force.

符号の説明Explanation of symbols

1…光半導体装置、2…支持基材、3…光半導体素子(LED)、4…リード電極、5…シリコーン接着剤、6…ボンディングワイヤ、7…封止樹脂、11,12…セラミック板、13…光半導体用シリコーン接着剤組成物。   DESCRIPTION OF SYMBOLS 1 ... Optical semiconductor device, 2 ... Support base material, 3 ... Optical semiconductor element (LED), 4 ... Lead electrode, 5 ... Silicone adhesive, 6 ... Bonding wire, 7 ... Sealing resin, 11, 12 ... Ceramic board, 13 ... Silicone adhesive composition for optical semiconductors.

Claims (7)

(A)
(A1)ケイ素原子に結合する水酸基量が50〜3000ppmであり、1分子中にケイ素原子に結合したアルケニル基を平均1個以上有し、SiO4/2単位を有するポリオルガノシロキサン
を含むアルケニル基含有ポリオルガノシロキサン、
(B)1分子中にケイ素原子に結合した水素原子を3個以上有するポリオルガノハイドロジェンシロキサン、
(C)白金系触媒、
及び
(D)接着性付与剤
を含有することを特徴とする光半導体用シリコーン接着剤組成物。
(A)
(A1) An alkenyl group containing a polyorganosiloxane having an average amount of one or more alkenyl groups bonded to a silicon atom in one molecule and a SiO 4/2 unit, wherein the amount of hydroxyl groups bonded to a silicon atom is 50 to 3000 ppm. Containing polyorganosiloxane,
(B) a polyorganohydrogensiloxane having three or more hydrogen atoms bonded to silicon atoms in one molecule;
(C) platinum-based catalyst,
And (D) an adhesiveness-imparting agent, and a silicone adhesive composition for optical semiconductors.
前記(A1)が、平均単位式:
(R SiO1/2(R SiO1/2(R SiO2/2(RSiO2/2(SiO4/2
(式中、Rは脂肪族不飽和結合を除く、互いに同じかもしくは異なる、置換もしくは非置換の1価炭化水素基であり、Rはアルケニル基であり、aは0又は正数であり、bは0又は正数であり、cは0又は正数であり、dは0又は正数であり、eは正数であり、0<(a+b)/e<2であり、0≦(c+d)/e<1であり、0.01<(b+d)/(a+b+c+d+e)<0.1である。)で表されるポリオルガノシロキサンであることを特徴とする請求項1に記載の光半導体用シリコーン接着剤組成物。
Said (A1) is an average unit formula:
(R 1 3 SiO 1/2 ) a (R 1 2 R 2 SiO 1/2 ) b (R 1 2 SiO 2/2 ) c (R 1 R 2 SiO 2/2 ) d (SiO 4/2 ) e
(Wherein R 1 is a substituted or unsubstituted monovalent hydrocarbon group that is the same or different from each other, excluding an aliphatic unsaturated bond, R 2 is an alkenyl group, and a is 0 or a positive number. , B is 0 or a positive number, c is 0 or a positive number, d is 0 or a positive number, e is a positive number, 0 <(a + b) / e <2, and 0 ≦ ( The photo-semiconductor according to claim 1, wherein the photo-semiconductor is a polyorganosiloxane represented by c + d) / e <1 and 0.01 <(b + d) / (a + b + c + d + e) <0.1. Silicone adhesive composition.
前記(A)成分は、さらに、(A2)ケイ素原子に結合する水酸基量が50〜3000ppmであり、23℃における粘度が50〜5000mPa・sである直鎖状のアルケニル基含有ポリオルガノシロキサンを含むことを特徴とする請求項1または2に記載の光半導体用シリコーン接着剤組成物。   The component (A) further includes (A2) a linear alkenyl group-containing polyorganosiloxane having an amount of hydroxyl groups bonded to silicon atoms of 50 to 3000 ppm and a viscosity at 23 ° C. of 50 to 5000 mPa · s. The silicone adhesive composition for optical semiconductors according to claim 1 or 2. 前記(A2)が、平均単位式:
(R SiO1/2(R SiO1/2(R SiO2/2(RSiO2/2
(式中、R及びRは前記と同じであり、fは0又は正数であり、gは正数であり、hは0又は正数であり、iは0又は正数であり、0<(f+g)/(h+i)<0.25であり、0.01<(g+i)/(f+g+h+i)である。)で表されることを特徴とする請求項3に記載の光半導体用シリコーン接着剤組成物。
Said (A2) is an average unit formula:
(R 1 3 SiO 1/2 ) f (R 1 2 R 2 SiO 1/2 ) g (R 1 2 SiO 2/2 ) h (R 1 R 2 SiO 2/2 ) i
Wherein R 1 and R 2 are the same as above, f is 0 or a positive number, g is a positive number, h is 0 or a positive number, i is 0 or a positive number, It is represented by 0 <(f + g) / (h + i) <0.25 and 0.01 <(g + i) / (f + g + h + i)). Adhesive composition.
硬化後の硬さ(ショアD)が、40以上であることを特徴とする請求項1乃至4のいずれか1項に記載の光半導体用シリコーン接着剤組成物。   The silicone adhesive composition for optical semiconductors according to any one of claims 1 to 4, wherein the hardness after curing (Shore D) is 40 or more. 請求項1乃至5のいずれか1項に記載の光半導体用シリコーン接着剤組成物を硬化してなる光半導体用シリコーン接着剤により、光半導体素子と支持基材とが接合されていることを特徴とする光半導体装置。   An optical semiconductor element and a support base material are joined by a silicone adhesive for optical semiconductors obtained by curing the silicone adhesive composition for optical semiconductors according to any one of claims 1 to 5. An optical semiconductor device. 前記光半導体素子が、発光ダイオード(LED)であることを特徴とする請求項6に記載の光半導体装置。   The optical semiconductor device according to claim 6, wherein the optical semiconductor element is a light emitting diode (LED).
JP2007290485A 2007-11-08 2007-11-08 Silicone adhesive composition for optical semiconductor and optical semiconductor device using it Withdrawn JP2009114365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007290485A JP2009114365A (en) 2007-11-08 2007-11-08 Silicone adhesive composition for optical semiconductor and optical semiconductor device using it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007290485A JP2009114365A (en) 2007-11-08 2007-11-08 Silicone adhesive composition for optical semiconductor and optical semiconductor device using it

Publications (1)

Publication Number Publication Date
JP2009114365A true JP2009114365A (en) 2009-05-28

Family

ID=40781858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007290485A Withdrawn JP2009114365A (en) 2007-11-08 2007-11-08 Silicone adhesive composition for optical semiconductor and optical semiconductor device using it

Country Status (1)

Country Link
JP (1) JP2009114365A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010285571A (en) * 2009-06-15 2010-12-24 Shin-Etsu Chemical Co Ltd Silicone resin composition for die bonding
JP2011089018A (en) * 2009-10-22 2011-05-06 Adeka Corp Hydrophobic core-shell silica particle, hollow silica particle and process for producing these particles
WO2011155482A1 (en) 2010-06-08 2011-12-15 積水化学工業株式会社 Die-bonding material for optical semiconductor devices and optical semiconductor device using same
JP2012074512A (en) * 2010-09-28 2012-04-12 Sekisui Chem Co Ltd Die-bonding material for optical semiconductor device and optical semiconductor device using the same
JP2012209280A (en) * 2011-03-29 2012-10-25 Toshiba Lighting & Technology Corp Light-emitting device and illumination device
JP2012222202A (en) * 2011-04-11 2012-11-12 Sekisui Chem Co Ltd Die-bonding material for optical semiconductor device, and optical semiconductor device using the same
JP2013089802A (en) * 2011-10-19 2013-05-13 Sekisui Chem Co Ltd Die bond material for optical semiconductor devices and optical semiconductor device using the same
WO2016013421A1 (en) * 2014-07-24 2016-01-28 セントラル硝子株式会社 Curable silicone resin composition, cured object obtained therefrom, and optical semiconductor device formed using same
JP2016111210A (en) * 2014-12-08 2016-06-20 信越化学工業株式会社 Conductive connection method using die bond material, and optical semiconductor device
CN106574118A (en) * 2014-07-24 2017-04-19 中央硝子株式会社 Curable silicone resin composition, cured object obtained therefrom, and optical semiconductor device formed using same
JP2020530502A (en) * 2017-07-31 2020-10-22 ダウ シリコーンズ コーポレーション Curable organopolysiloxane composition and opto-semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010285571A (en) * 2009-06-15 2010-12-24 Shin-Etsu Chemical Co Ltd Silicone resin composition for die bonding
JP2011089018A (en) * 2009-10-22 2011-05-06 Adeka Corp Hydrophobic core-shell silica particle, hollow silica particle and process for producing these particles
WO2011155482A1 (en) 2010-06-08 2011-12-15 積水化学工業株式会社 Die-bonding material for optical semiconductor devices and optical semiconductor device using same
JP2012074512A (en) * 2010-09-28 2012-04-12 Sekisui Chem Co Ltd Die-bonding material for optical semiconductor device and optical semiconductor device using the same
JP2012209280A (en) * 2011-03-29 2012-10-25 Toshiba Lighting & Technology Corp Light-emitting device and illumination device
JP2012222202A (en) * 2011-04-11 2012-11-12 Sekisui Chem Co Ltd Die-bonding material for optical semiconductor device, and optical semiconductor device using the same
JP2013089802A (en) * 2011-10-19 2013-05-13 Sekisui Chem Co Ltd Die bond material for optical semiconductor devices and optical semiconductor device using the same
WO2016013421A1 (en) * 2014-07-24 2016-01-28 セントラル硝子株式会社 Curable silicone resin composition, cured object obtained therefrom, and optical semiconductor device formed using same
CN106574118A (en) * 2014-07-24 2017-04-19 中央硝子株式会社 Curable silicone resin composition, cured object obtained therefrom, and optical semiconductor device formed using same
JP2016111210A (en) * 2014-12-08 2016-06-20 信越化学工業株式会社 Conductive connection method using die bond material, and optical semiconductor device
JP2020530502A (en) * 2017-07-31 2020-10-22 ダウ シリコーンズ コーポレーション Curable organopolysiloxane composition and opto-semiconductor device
JP7248645B2 (en) 2017-07-31 2023-03-29 ダウ シリコーンズ コーポレーション Curable organopolysiloxane composition and optical semiconductor device

Similar Documents

Publication Publication Date Title
JP5149022B2 (en) Silicone composition for optical semiconductor sealing and optical semiconductor device using the same
JP2009114365A (en) Silicone adhesive composition for optical semiconductor and optical semiconductor device using it
JP5638714B2 (en) Silicone composition for sealing light emitting device and light emitting device
JP5505991B2 (en) High adhesion silicone resin composition and optical semiconductor device using the composition
JP5652387B2 (en) Highly reliable curable silicone resin composition and optical semiconductor device using the same
JP5170471B2 (en) Low gas permeable silicone resin composition and optical semiconductor device
JP5587148B2 (en) Self-adhesive polyorganosiloxane composition
JP6277974B2 (en) Addition-curable silicone resin composition and die attach material for optical semiconductor devices
JP5014774B2 (en) Addition reaction curable silicone composition and semiconductor device
JP6254833B2 (en) Silicone resin composition and optical semiconductor device
JP4586981B2 (en) Self-adhesive organopolysiloxane composition
US9564562B2 (en) Silicone composition for sealing semiconductor
JP6245136B2 (en) Silicone resin composition for optical semiconductor element sealing and optical semiconductor device
JP2010065161A (en) Self-adhesive polyorganosiloxane composition
JP2007002234A (en) Curable silicone rubber composition and semiconductor device
JP2006213789A (en) Curable organopolysiloxane composition and semiconductor device
JP7009381B2 (en) Reactive hot melt silicone filled container and method for manufacturing reactive hot melt silicone
JP2008159713A (en) Light emitting device
JP6884458B2 (en) Curable organopolysiloxane compositions and semiconductor devices
JP5259947B2 (en) Silicone composition for semiconductor encapsulation and semiconductor device
JP5117033B2 (en) Silicone adhesive composition for optical semiconductor and optical semiconductor device using the same
JP2007180284A (en) Light emitting device
JP2010003848A (en) Light emitting device
JP2020070324A (en) Addition-curable silicone resin composition, cured product of the same, and optical semiconductor device
JP7100600B2 (en) Curable organosilicon resin composition

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20110201