JP2009105139A - 配線基板及びその製造方法と半導体装置 - Google Patents
配線基板及びその製造方法と半導体装置 Download PDFInfo
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】複数の接続パッド22と接続パッド22にそれぞれ繋がる引き出し配線部24とが表層側の絶縁層30に配置された構造を含み、引き出し配線部24は接続パッド22から屈曲して配置されており、接続パッド22上に突出するはんだ層42が設けられている。引き出し配線部24上のはんだが屈曲部B側に移動して接続パッド22上に突出するはんだ層42が形成される。
【選択図】図5
Description
図3は本発明の第1実施形態の配線基板の接続パッドを示す平面図、図4〜図6は同じく配線基板の接続パッド上にはんだを形成する方法を示す平面図及び断面図である。
図12は本発明の第2実施形態の配線基板を示す平面図である。前述した第1実施形態の配線基板10の接続パッド22は長さLをもつ長方形状であり、その上下側に引き出し配線部24が屈曲して繋がっている。
Claims (9)
- 複数の接続パッドと前記複数の接続パッドにそれぞれ繋がる引き出し配線部とが表層側の絶縁層に配置された構造を有する配線基板であって、
前記引き出し配線部は前記接続パッドから屈曲して配置されており、前記接続パッド上に突出するはんだ層が設けられていることを特徴とする配線基板。 - 前記引き出し配線部は長方形状の前記接続パッドの両端側にそれぞれ繋がっていることを特徴とする請求項1に記載の配線基板。
- 前記引き出し配線部の各々は屈曲部を介して繋がっており、前記屈曲部が前記接続パッドとなっていることを特徴とする請求項1に記載の配線基板。
- 前記接続パッド上のはんだ層は、前記接続パッド及び前記引き出し配線部の上に形成されたはんだがリフロー加熱されて前記接続パッド上に集められて形成されることを特徴とする請求項1乃至3のいずれか一項に記載の配線基板。
- 請求項1乃至4のいずれか一項の配線基板と、
前記配線基板の前記接続パッドに前記はんだ層を介してバンプが接合された半導体チップとを有することを特徴とする半導体装置。 - 複数の接続パッドと前記複数の接続パッドにそれぞれ繋がる引き出し配線部とが表層側の絶縁層に配置された構造を有し、前記引き出し配線部が接続パッドから屈曲して配置された配線基板を用意する工程と、
前記接続パッド及び前記引き出し配線部の上にはんだを形成する工程と、
前記はんだをリフロー加熱することによって、前記引き出し配線部の上の前記はんだを前記接続パッド上に移動させて集めることにより、前記接続パッド上に突出するはんだ層を形成する工程とを有することを特徴とする配線基板の製造方法。 - 前記引き出し配線部は長方形状の接続パッドの両端側にそれぞれ繋がっていることを特徴とする請求項6に記載の配線基板の製造方法。
- 前記引き出し配線部の各々は屈曲部を介して繋がっており、前記屈曲部が前記接続パッドとなっていることを特徴とする請求項6に記載の配線基板の製造方法。
- 前記引き出し配線部の前記接続パッドからの屈曲角度は、前記接続パッドのピッチが所要の寸法以下になるように調整されることを特徴とする請求項6乃至7のいずれか一項に記載の配線基板の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007274011A JP2009105139A (ja) | 2007-10-22 | 2007-10-22 | 配線基板及びその製造方法と半導体装置 |
KR1020080097989A KR101501626B1 (ko) | 2007-10-22 | 2008-10-07 | 배선 기판 및 그 제조 방법과 반도체 장치 |
TW097138886A TWI460799B (zh) | 2007-10-22 | 2008-10-09 | 佈線基材及其製造方法以及半導體元件 |
US12/254,382 US8222749B2 (en) | 2007-10-22 | 2008-10-20 | Wiring substrate and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007274011A JP2009105139A (ja) | 2007-10-22 | 2007-10-22 | 配線基板及びその製造方法と半導体装置 |
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JP2012074575A (ja) * | 2010-09-29 | 2012-04-12 | Hitachi Chem Co Ltd | 半導体パッケージ基板 |
JP2013093538A (ja) * | 2011-10-04 | 2013-05-16 | Ngk Spark Plug Co Ltd | 配線基板及びその製造方法 |
JP2014053647A (ja) * | 2013-12-18 | 2014-03-20 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
JP2014187186A (ja) * | 2013-03-22 | 2014-10-02 | Renesas Electronics Corp | 半導体装置の製造方法および半導体装置 |
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Also Published As
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US8222749B2 (en) | 2012-07-17 |
US20090102062A1 (en) | 2009-04-23 |
KR101501626B1 (ko) | 2015-03-11 |
KR20090040841A (ko) | 2009-04-27 |
TW200929406A (en) | 2009-07-01 |
TWI460799B (zh) | 2014-11-11 |
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