JP2009026943A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2009026943A
JP2009026943A JP2007188366A JP2007188366A JP2009026943A JP 2009026943 A JP2009026943 A JP 2009026943A JP 2007188366 A JP2007188366 A JP 2007188366A JP 2007188366 A JP2007188366 A JP 2007188366A JP 2009026943 A JP2009026943 A JP 2009026943A
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semiconductor chip
heat
mounting substrate
hole
heat dissipation
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真 ▲鶴▼野
Makoto Tsuruno
Shinichiro Hattori
慎一郎 服部
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Isahaya Electronics Corp
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Isahaya Electronics Corp
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Priority to JP2007188366A priority Critical patent/JP2009026943A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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Abstract

<P>PROBLEM TO BE SOLVED: To improve heat dissipation of a semiconductor device using a semiconductor chip. <P>SOLUTION: The semiconductor device having the semiconductor chip (30) mounted on a mounting substrate (20) of a hybrid integrated circuit is characterized by having a heat dissipation material (40) between the mounting substrate (20) below the heat dissipation material (40) and the semiconductor chip, wherein through holes (50) having internal walls covered with metal films (70) are formed in the mounting substrate (20), and heat generated by the semiconductor chip (30) is passed through the heat dissipation material (40) and the metal films (70) on the internal walls of the through holes (50), and radiated to the reverse side of the mounting substrate (20). A heat conductive material (60) is buried in each through hole (50) to efficiently release the heat of the semiconductor chip (30). <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、放熱材、スルーホール、熱伝導材等を用いた半導体装置に関する
ものである。 The present invention relates to a semiconductor device using a heat dissipation material, a through hole, a heat conduction material, and the like.

図６は、従来技術に係わる半導体チップの放熱の概略断面図を示したものである。 FIG. 6 is a schematic cross-sectional view of heat dissipation of a semiconductor chip according to the prior art.

実装基板（２０）上に、半導体チップ（３０）が実装され、半導体チップ（３０）が実装されている箇所にはスルーホール（５０）が形成され、スルーホール内部に金属を充填している。前記半導体チップ（３０）の熱を、前記スルーホール（５０）内部の金属を介し、実装基板（２０）の裏面へ放熱するというものである。
特開平０５−２６７５１２号公報 A semiconductor chip (30) is mounted on the mounting substrate (20), and a through hole (50) is formed at a place where the semiconductor chip (30) is mounted, and a metal is filled in the through hole. The heat of the semiconductor chip (30) is radiated to the back surface of the mounting substrate (20) through the metal inside the through hole (50).
JP 05-267512 A

半導体チップ（３０）の真下に、スルーホール（５０）があることで、半導体チップ（３０）と実装基板（２０）との密着性が悪くなる。また、前記半導体チップ（３０）と前記実装基板（２０）との熱応力差も大きくなるため、前記半導体チップ（３０）が実装面から剥がれ易く、破壊等に結びつく可能性がある。半導体チップ（３０）の放熱において、従来の技術では半導体チップ（３０）の真下にスルーホールを設けず、実装基板の大型化、実装基板の材料に放熱性が高いセラミックの使用、もしくは放熱板を使用するなどの手法を用いてきた。そのため高い放熱性を有する半導体装置は、大型もしくは高価なものになる可能性がある。 Since the through hole (50) is located directly under the semiconductor chip (30), the adhesion between the semiconductor chip (30) and the mounting substrate (20) is deteriorated. In addition, since the difference in thermal stress between the semiconductor chip (30) and the mounting substrate (20) also increases, the semiconductor chip (30) is easily peeled off from the mounting surface, which may lead to destruction or the like. In the heat dissipation of the semiconductor chip (30), the conventional technology does not provide a through hole directly under the semiconductor chip (30), the mounting board is enlarged, the use of ceramic with high heat dissipation as the material of the mounting board, or a heat sink is used. We have used techniques such as using. Therefore, a semiconductor device having high heat dissipation may be large or expensive.

請求項１において、半導体チップ（３０）と実装基板（２０）に設けた内壁を金属膜（７０）で覆ったスルーホール（５０）の間に放熱材（４０）を設けることにで、前記半導体チップ（３０）と前記放熱材（４０）及び、前記スルーホールを有する前記実装基板（２０）を密着、固定することが可能となり、前記半導体チップ（３０）の熱を、前記放熱材（４０）及び、前記スルーホール（５０）内壁の金属膜（７０）を介し、前記実装基板（２０）の裏面へ効率的に放熱することができる。 2. The semiconductor device according to claim 1, wherein a heat dissipating material is provided between the semiconductor chip and the through hole in which the inner wall provided on the mounting substrate is covered with the metal film. The chip (30), the heat dissipating material (40), and the mounting substrate (20) having the through hole can be adhered and fixed, and the heat of the semiconductor chip (30) is transferred to the heat dissipating material (40). And heat can be efficiently radiated to the back surface of the mounting substrate (20) through the metal film (70) on the inner wall of the through hole (50).

請求項２において、請求項１に記載のスルーホール（５０）内に熱伝導材（６０）を含むことで、前記半導体チップ（３０）の熱を、前記スルーホール（５０）内壁の金属膜（７０）及び、前記熱伝導材（６０）を介し前記実装基板（４０）の裏面へ放熱する効果が大きくなる。 In Claim 2, the heat conduction material (60) is included in the through hole (50) according to claim 1, so that the heat of the semiconductor chip (30) can be transferred to the metal film on the inner wall of the through hole (50). 70) and the effect of radiating heat to the back surface of the mounting substrate (40) through the heat conductive material (60) is increased.

請求項３において、請求項１に記載のスルーホール及び、請求項２に記載の内部に前記熱伝導材（６０）を含むスルーホールを放熱材（４０）の下部に複数個設けることで、前記半導体チップ（３０）の熱を、前記スルーホール（５０）内壁の金属膜（７０）及び、前記熱伝導材（６０）を介し前記実装基板（４０）の裏面への放熱する効果が大きくなる。 In claim 3, by providing a plurality of through-holes according to claim 1 and a plurality of through-holes including the heat conducting material (60) in the interior of claim 2 below the heat dissipating material (40), The effect of radiating the heat of the semiconductor chip (30) to the back surface of the mounting substrate (40) through the metal film (70) on the inner wall of the through hole (50) and the heat conducting material (60) is increased.

請求項４において、請求項１に記載のスルーホール及び、請求項２に記載の内部に前記熱伝導材（６０）を含むスルーホールを放熱材（４０）の下部及び、その周辺に複数個設けることで、前記半導体チップ（３０）の熱を、前記スルーホール（５０）内壁の金属膜（７０）及び、前記熱伝導材（６０）を介し前記実装基板（４０）の裏面への放熱する効果が大きくなる。 In Claim 4, the through-hole of Claim 1 and the through-hole which contains the said heat conductive material (60) in the inside of Claim 2 are provided in the lower part of a heat radiating material (40), and its periphery. Thus, the heat of the semiconductor chip (30) is radiated to the back surface of the mounting substrate (40) through the metal film (70) on the inner wall of the through hole (50) and the heat conductive material (60). Becomes larger.

本発明により、半導体チップ（３０）の高い放熱効果が得られ、小型で安価な半導体装置の作成が可能となる。 According to the present invention, a high heat dissipation effect of the semiconductor chip (30) can be obtained, and a small and inexpensive semiconductor device can be produced.

以下、図面に基づいて本発明の実施例を説明する。 Embodiments of the present invention will be described below with reference to the drawings.

図１は、本発明の実施例に係わる半導体装置の概略断面図を示したものであり、具体的には、実装基板（２０）に半導体チップ（３０）とその真下に放熱材（４０）及び、内壁を金属膜（７０）で覆ったスルーホール（５０）が形成されている概略断面図を示したものである。また、図２は、前記スルーホール（５０）に熱伝導材（６０）が含まれている場合の概略断面図を示したものであり、図３〜図４は、前記スルーホール（５０）が複数個形成されている場合の概略断面図を示したものである。（図では、チップ抵抗、チップコンデンサなどの実回路上必要な実装部品、配線パターン、金属製のワイヤーは省略している）
＜実施例１＞ FIG. 1 is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention. Specifically, a semiconductor chip (30) is mounted on a mounting substrate (20), and a heat dissipation material (40) and FIG. 2 is a schematic cross-sectional view in which a through hole (50) having an inner wall covered with a metal film (70) is formed. FIG. 2 is a schematic cross-sectional view when the through hole (50) includes a heat conductive material (60). FIGS. 3 to 4 illustrate the through hole (50). The schematic sectional drawing at the time of forming two or more is shown. (In the figure, mounting components, wiring patterns, and metal wires necessary for actual circuits such as chip resistors and chip capacitors are omitted.)
<Example 1>

図１は本発明の第１の実施例を示す。本実施例にかかる半導体装置は、スルーホール（５０）を有する実装基板（２０）と放熱材（４０）と半導体チップ（３０）とを用いて構成されている。具体的には、実装基板（２０）上に半導体チップ（３０）が設けられ、実装基板（２０）と半導体チップ（３０）との間に放熱材（４０）が挿入されている。例えば、実装基板（２０）は安価なガラスエポキシ基板、放熱材（４０）及び、スルーホール（５０）内壁の金属膜には銅を用いて構成されている。実装基板（２０）において半導体チップ（３０）の真下に当たる部分には、内壁を金属膜（７０）で覆ったスルーホール（５０）が設けられている。実装基板（２０）と半導体チップ（３０）との間に放熱材（４０）を配置することで、前記半導体チップ（３０）と前記放熱材（４０）及び、前記スルーホールを有する前記実装基板（２０）を密着、固定することが可能となるため、半導体チップ（３０）の熱を、前記放熱材（４０）及び、前記スルーホール（５０）内壁の金属膜（７０）を介し、前記実装基板（２０）の裏面へ効率的に放熱することで、高い放熱効果が得られ、小型で安価な半導体装置の作成が可能である。
＜実施例２＞ FIG. 1 shows a first embodiment of the present invention. The semiconductor device according to this example is configured by using a mounting substrate (20) having a through hole (50), a heat radiation material (40), and a semiconductor chip (30). Specifically, the semiconductor chip (30) is provided on the mounting substrate (20), and the heat dissipation material (40) is inserted between the mounting substrate (20) and the semiconductor chip (30). For example, the mounting substrate (20) is made of an inexpensive glass epoxy substrate, a heat radiating material (40), and a metal film on the inner wall of the through hole (50) using copper. A through hole (50) whose inner wall is covered with a metal film (70) is provided in a portion of the mounting substrate (20) that is directly below the semiconductor chip (30). By disposing a heat radiating material (40) between the mounting substrate (20) and the semiconductor chip (30), the semiconductor chip (30), the heat radiating material (40), and the mounting substrate having the through hole ( 20) can be closely attached and fixed, so that the heat of the semiconductor chip (30) is transferred to the mounting substrate via the heat radiating material (40) and the metal film (70) on the inner wall of the through hole (50). By efficiently dissipating heat to the back surface of (20), a high heat dissipation effect can be obtained, and a small and inexpensive semiconductor device can be created.
<Example 2>

図３は本発明の第２の実施例を示す。本実施例にかかる半導体装置は、スルーホール（５０）を有する実装基板（２０）と放熱材（４０）と半導体チップ（３０）とを用いて構成されている。具体的には、実装基板（２０）上に半導体チップ（３０）が設けられ、実装基板（２０）と半導体チップ（３０）との間に放熱材（４０）が挿入されている。実装基板（２０）において半導体チップ（３０）の真下に当たる部分には、内壁を金属膜（７０）で覆ったスルーホール（５０）が設けられており、スルーホール内部には熱伝導材（６０）を含んでいる。例えば実装基板（２０）は安価なガラスエポキシ基板、放熱材（４０）及び、スルーホール（５０）内壁の金属膜には銅、熱伝導材（６０）にははんだを用いて構成されている。実装基板（２０）と半導体チップ（３０）との間に放熱材（４０）を配置することで、前記半導体チップ（３０）と前記放熱材（４０）及び、前記スルーホールを有する前記実装基板（２０）を密着、固定することが可能となるため、半導体チップ（３０）の熱を、前記放熱材（４０）、前記スルーホール（５０）内壁の金属膜（７０）及び、熱伝導材（６０）を介し、前記実装基板（２０）の裏面へ効率的に放熱することで、実施例１よりも高い放熱効果が得られ、小型で安価な半導体装置の作成が可能である。
＜実施例３＞ FIG. 3 shows a second embodiment of the present invention. The semiconductor device according to this example is configured by using a mounting substrate (20) having a through hole (50), a heat radiation material (40), and a semiconductor chip (30). Specifically, the semiconductor chip (30) is provided on the mounting substrate (20), and the heat dissipation material (40) is inserted between the mounting substrate (20) and the semiconductor chip (30). A through hole (50) whose inner wall is covered with a metal film (70) is provided in a portion of the mounting substrate (20) that is directly below the semiconductor chip (30). Inside the through hole, a heat conductive material (60) is provided. Is included. For example, the mounting substrate (20) is constituted by using an inexpensive glass epoxy substrate, a heat radiating material (40), copper for the metal film on the inner wall of the through hole (50), and solder for the heat conducting material (60). By disposing a heat radiating material (40) between the mounting substrate (20) and the semiconductor chip (30), the semiconductor chip (30), the heat radiating material (40), and the mounting substrate having the through hole ( 20) can be brought into close contact with and fixed, so that the heat of the semiconductor chip (30) can be transferred to the heat radiation material (40), the metal film (70) on the inner wall of the through hole (50), and the heat conduction material (60). ) To efficiently dissipate heat to the back surface of the mounting substrate (20), a higher heat dissipation effect than that of Example 1 can be obtained, and a small and inexpensive semiconductor device can be produced.
<Example 3>

図４は本発明の第３の実施例を示す。本実施例にかかる半導体装置は、スルーホール（５０）を有する実装基板（２０）と放熱材（４０）と半導体チップ（３０）とを用いて構成されている。具体的には、実装基板（２０）上に半導体チップ（３０）が設けられ、実装基板（２０）と半導体チップ（３０）との間に放熱材（４０）が挿入されている。実装基板（２０）において放熱材（４０）の下部には、内壁を金属膜（７０）で覆ったスルーホール（５０）が複数個設けられており、スルーホール内部には熱伝導材（６０）を含んでいる。例えば実装基板（２０）は安価なガラスエポキシ基板、放熱材（４０）及び、スルーホール（５０）内壁の金属膜には銅、熱伝導材（６０）にははんだを用いて構成されている。実装基板（２０）と半導体チップ（３０）との間に放熱材（４０）を配置することで、前記半導体チップ（３０）と前記放熱材（４０）及び、前記スルーホールを有する前記実装基板（２０）を密着、固定することが可能となるため、半導体チップ（３０）の熱を、前記放熱材（４０）、複数個設けたスルーホール（５０）内壁の金属膜（７０）及び、熱伝導材（６０）を介し、前記実装基板（２０）の裏面へ効率的に放熱することで、実施例２よりも高い放熱効果が得られ、小型で安価な半導体装置の作成が可能である。
＜実施例４＞ FIG. 4 shows a third embodiment of the present invention. The semiconductor device according to this example is configured by using a mounting substrate (20) having a through hole (50), a heat radiation material (40), and a semiconductor chip (30). Specifically, the semiconductor chip (30) is provided on the mounting substrate (20), and the heat dissipation material (40) is inserted between the mounting substrate (20) and the semiconductor chip (30). In the mounting substrate (20), a plurality of through holes (50) whose inner walls are covered with a metal film (70) are provided in the lower part of the heat dissipation material (40). Inside the through holes, the heat conduction material (60) is provided. Is included. For example, the mounting substrate (20) is constituted by using an inexpensive glass epoxy substrate, a heat radiating material (40), copper for the metal film on the inner wall of the through hole (50), and solder for the heat conducting material (60). By disposing a heat radiating material (40) between the mounting substrate (20) and the semiconductor chip (30), the semiconductor chip (30), the heat radiating material (40), and the mounting substrate having the through hole ( 20) can be closely attached and fixed, so that the heat of the semiconductor chip (30) can be transferred to the heat dissipating material (40), the metal film (70) on the inner wall of the plurality of through holes (50), By efficiently dissipating heat to the back surface of the mounting substrate (20) through the material (60), a higher heat dissipation effect than that of Example 2 can be obtained, and a small and inexpensive semiconductor device can be created.
<Example 4>

図５は本発明の第４の実施例を示す。本実施例にかかる半導体装置は、スルーホール（５０）を有する実装基板（２０）と放熱材（４０）と半導体チップ（３０）とを用いて構成されている。具体的には、実装基板（２０）上に半導体チップ（３０）が設けられ、実装基板（２０）と半導体チップ（３０）との間に放熱材（４０）が挿入されている。実装基板（２０）において放熱材（４０）の下部及び、その周辺には、内壁を金属膜（７０）で覆ったスルーホール（５０）が複数個設けられており、スルーホール内部には熱伝導材（６０）を含んでいる。例えば実装基板（２０）は安価なガラスエポキシ基板、放熱材（４０）及び、スルーホール（５０）内壁の金属膜には銅、熱伝導材（６０）にははんだを用いて構成されている。実装基板（２０）と半導体チップ（３０）との間に放熱材（４０）を配置することで、前記半導体チップ（３０）と前記放熱材（４０）及び、前記スルーホールを有する前記実装基板（２０）を密着、固定することが可能となるため、半導体チップ（３０）の熱を、前記放熱材（４０）、複数個設けたスルーホール（５０）内壁の金属膜（７０）及び、熱伝導材（６０）を介し、前記実装基板（２０）の裏面へ効率的に放熱することで、実施例３よりも高い放熱効果が得られ、小型で安価な半導体装置の作成が可能である。 FIG. 5 shows a fourth embodiment of the present invention. The semiconductor device according to this example is configured by using a mounting substrate (20) having a through hole (50), a heat radiation material (40), and a semiconductor chip (30). Specifically, the semiconductor chip (30) is provided on the mounting substrate (20), and the heat dissipation material (40) is inserted between the mounting substrate (20) and the semiconductor chip (30). In the mounting substrate (20), a plurality of through holes (50) having inner walls covered with a metal film (70) are provided below and around the heat dissipation material (40). Material (60) is included. For example, the mounting substrate (20) is constituted by using an inexpensive glass epoxy substrate, a heat radiating material (40), copper for the metal film on the inner wall of the through hole (50), and solder for the heat conducting material (60). By disposing a heat radiating material (40) between the mounting substrate (20) and the semiconductor chip (30), the semiconductor chip (30), the heat radiating material (40), and the mounting substrate having the through hole ( 20) can be closely attached and fixed, so that the heat of the semiconductor chip (30) can be transferred to the heat dissipating material (40), the metal film (70) on the inner wall of the plurality of through holes (50), and the heat conduction. By efficiently dissipating heat to the back surface of the mounting substrate (20) through the material (60), a higher heat dissipation effect than that of Example 3 can be obtained, and a small and inexpensive semiconductor device can be created.

以上のように、本発明の半導体装置によれば、半導体チップの放熱性を向上することが可能であり、安価な材料で小型化を実現することが可能である。 As described above, according to the semiconductor device of the present invention, the heat dissipation of the semiconductor chip can be improved, and the miniaturization can be realized with an inexpensive material.

本発明の第１の実施例を示す概略断面図である。It is a schematic sectional drawing which shows the 1st Example of this invention. 本発明の第１のスルーホール部分の拡大を示す概略断面図である。It is a schematic sectional drawing which shows the expansion of the 1st through-hole part of this invention. 本発明の第２の実施例を示す概略断面図である。It is a schematic sectional drawing which shows the 2nd Example of this invention. 本発明の第３の実施例を示す概略断面図である。It is a schematic sectional drawing which shows the 3rd Example of this invention. 本発明の第４の実施例を示す概略断面図である。It is a schematic sectional drawing which shows the 4th Example of this invention. 従来の半導体チップの放熱例を示す概略断面図である。It is a schematic sectional drawing which shows the example of heat dissipation of the conventional semiconductor chip.

符号の説明Explanation of symbols

２０ 実装基板
３０ 半導体チップ
４０ 放熱材
５０ スルーホール
６０ 熱伝導材
７０ 金属膜 20 mounting substrate 30 semiconductor chip 40 heat dissipating material 50 through hole 60 heat conducting material 70 metal film

Claims (4)

内壁を金属膜（７０）で覆ったスルーホール（５０）を有する基板と、前記スルーホール上部に実装された半導体チップ（３０）とを備えた半導体装置において、前記半導体チップ（３０）と実装基板（２０）の間に放熱材（４０）を有し、前記放熱材（４０）が、前記スルーホール（５０）内壁の金属膜と熱的、電気的に接触していることを特徴とする半導体装置。 In a semiconductor device comprising a substrate having a through hole (50) whose inner wall is covered with a metal film (70) and a semiconductor chip (30) mounted on the through hole, the semiconductor chip (30) and the mounting substrate A semiconductor having a heat dissipation material (40) between (20), wherein the heat dissipation material (40) is in thermal and electrical contact with a metal film on the inner wall of the through hole (50). apparatus. 前記スルーホール（５０）内部に、熱伝導性のよい熱伝導材（６０）を含む請求項１に記載の半導体装置。 2. The semiconductor device according to claim 1, wherein a thermal conductive material (60) having good thermal conductivity is included in the through hole (50). 前記スルーホール（５０）は、１個または複数個あり、放熱材（４０）の下部に配置された請求項１から２のいずれか１項に記載の半導体装置。 3. The semiconductor device according to claim 1, wherein there are one or a plurality of through holes (50), and the through holes (50) are arranged below the heat dissipating material (40). 前記スルーホール（５０）は、１個または複数個あり、放熱材（４０）の下部及び、その周辺へ配置された請求項１から２のいずれか１項に記載の半導体装置。 3. The semiconductor device according to claim 1, wherein there are one or a plurality of the through holes (50), and the through holes (50) are arranged at a lower portion of the heat dissipation material (40) and the periphery thereof.
JP2007188366A 2007-07-19 2007-07-19 Semiconductor device Pending JP2009026943A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220330A (en) * 2013-05-07 2014-11-20 日立金属株式会社 Optical wiring board, manufacturing method of the same, and optical module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220330A (en) * 2013-05-07 2014-11-20 日立金属株式会社 Optical wiring board, manufacturing method of the same, and optical module

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