JP6633151B2 - Circuit module - Google Patents

Circuit module Download PDF

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JP6633151B2
JP6633151B2 JP2018151331A JP2018151331A JP6633151B2 JP 6633151 B2 JP6633151 B2 JP 6633151B2 JP 2018151331 A JP2018151331 A JP 2018151331A JP 2018151331 A JP2018151331 A JP 2018151331A JP 6633151 B2 JP6633151 B2 JP 6633151B2
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heat
circuit module
layer
generating component
opening
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JP2018207118A (en
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繁生 櫻井
繁生 櫻井
市川　洋平
洋平 市川
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Taiyo Yuden Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Description

本発明は、配線基板上に発熱部品が搭載された回路モジュールに関する。   The present invention relates to a circuit module having a heat generating component mounted on a wiring board.

従来、多層配線基板内に金属製のコア材が設けられた回路モジュールが知られている（特許文献１参照）。このようなコア材は、配線基板内に収容された内蔵部品のシールドパターンとして機能するとともに、配線基板の剛性を高める機能も有する。   2. Description of the Related Art Conventionally, a circuit module in which a metal core material is provided in a multilayer wiring board is known (see Patent Document 1). Such a core material functions as a shield pattern for the built-in components accommodated in the wiring board and also has a function of increasing the rigidity of the wiring board.

一方、回路モジュールとして、上記コア材の放熱機能に着目した構成も知られている。特許文献２には、配線基板の実装面上に配置されたパワーアンプＩＣと金属製のコア材とを接続する放熱用のビア導体が複数形成され、パワーアンプＩＣで発生した熱がビア導体を介してコア材へ伝導されるように構成された回路モジュールが記載されている。伝導された熱は、コア材から放熱されるとともに、実装先の親回路基板等にも放熱され得る。   On the other hand, a configuration is also known as a circuit module that focuses on the heat dissipation function of the core material. In Patent Document 2, a plurality of heat dissipation via conductors for connecting a power amplifier IC disposed on a mounting surface of a wiring board and a metal core material are formed, and heat generated in the power amplifier IC is used to dissipate the via conductor. A circuit module configured to be conducted to a core material via the core is described. The conducted heat can be dissipated from the core material and also dissipated to the parent circuit board or the like on which it is mounted.

特開２０１３−１０５７５６号公報JP 2013-105756 A 特許第５２８５０６号Patent No. 528506

特許文献２に記載の回路モジュールは、コア材と実装面との間に、複数の配線層と、それらの間に形成された複数の絶縁層と、放熱用のビア導体とを有している。複数の絶縁層はコア材やビア導体と比較して熱伝導性が低いため、パワーアンプＩＣで発生した熱は主に放熱用のビア導体を介してコア材へ伝導される。しかしながら、パワーアンプＩＣで発生した熱が、放熱用のビア導体で単位時間当たりに輸送できる熱量を越えている場合には、パワーアンプＩＣで発生した熱を十分に放熱することが難しかった。   The circuit module described in Patent Document 2 has a plurality of wiring layers, a plurality of insulating layers formed between them, and a via conductor for heat dissipation between the core material and the mounting surface. . Since the plurality of insulating layers have lower thermal conductivity than the core material and the via conductor, heat generated in the power amplifier IC is mainly transmitted to the core material via the heat dissipation via conductor. However, when the heat generated by the power amplifier IC exceeds the amount of heat that can be transported per unit time by the heat dissipation via conductor, it is difficult to sufficiently radiate the heat generated by the power amplifier IC.

以上のような事情に鑑み、本発明の目的は、放熱性の高い回路モジュールを提供することにある。   In view of the circumstances as described above, an object of the present invention is to provide a circuit module having high heat dissipation.

上記目的を達成するため、本発明の一形態に係る回路モジュールは、配線基板と、発熱部品と、放熱ラインとを具備する。
上記配線基板は、熱伝導性のコア材を含むコア層と、一主面から上記コア層に向かって形成された開口部を含み上記コア層上に設けられた多層配線層とを有する。
上記発熱部品は、上記開口部に配設される。
上記放熱ラインは、上記配線基板内に形成され上記発熱部品と上記コア材とを接続する。 In order to achieve the above object, a circuit module according to one embodiment of the present invention includes a wiring board, a heat generating component, and a heat radiating line.
The wiring board has a core layer including a thermally conductive core material, and a multilayer wiring layer including an opening formed from one main surface toward the core layer and provided on the core layer.
The heat generating component is disposed in the opening.
The heat radiation line is formed in the wiring board and connects the heat generating component and the core material.

上記構成によれば、発熱部品が開口部に配設され、放熱ラインによって発熱部品とコア材とが接続されるため、発熱部品のコア材への放熱経路の長さを短縮することができ、回路モジュール全体の放熱性を高めることができる。   According to the above configuration, since the heat-generating component is disposed in the opening, and the heat-generating component and the core material are connected by the heat-radiating line, the length of the heat-radiating path to the core material of the heat-generating component can be reduced, The heat radiation of the entire circuit module can be improved.

また、上記放熱ラインは、上記発熱部品を接着させる熱伝導性の接着部材を有してもよい。
これにより、放熱ラインと発熱部品とを確実に接着させることができるとともに、熱伝導性も確保することができる。 Further, the heat radiation line may include a heat conductive adhesive member for adhering the heat generating component.
Thereby, the heat radiation line and the heat-generating component can be securely bonded, and the thermal conductivity can be ensured.

例えば、上記開口部は、上記コア層に達する深さで形成され、
上記発熱部品は、上記コア層上に上記接着部材を介して配置されてもよい。
これにより、発熱部品の熱をコア層へ効率よく伝達することができる。 For example, the opening is formed at a depth reaching the core layer,
The heat generating component may be arranged on the core layer via the adhesive member.
Thereby, the heat of the heat generating component can be efficiently transmitted to the core layer.

あるいは、配線基板は、複数のビアをさらに有し、
上記放熱ラインは、上記接着部材と上記コア材とを接続し上記ビアよりも大きな径を有する熱伝導性の柱状体を有してもよい。
このような柱状体により、熱の伝導性を高めるとともに、体積当たりの表面積を比較的小さい構成とすることができ、発熱部品の熱を効率良く逃がすことができる。 Alternatively, the wiring board further has a plurality of vias,
The heat radiation line may include a thermally conductive columnar body that connects the adhesive member and the core material and has a larger diameter than the via.
With such a columnar body, the heat conductivity can be increased, the surface area per volume can be made relatively small, and the heat of the heat-generating component can be efficiently released.

また例えば、上記コア層は、電子部品を収容し上記コア材に形成されたキャビティをさらに有してもよい。   Further, for example, the core layer may further include a cavity that accommodates an electronic component and is formed in the core material.

本発明の第１の実施形態に係る回路モジュールを示す図である。FIG. 2 is a diagram illustrating a circuit module according to the first embodiment of the present invention. 上記回路モジュールの製造方法を示す模式図である。It is a mimetic diagram showing the manufacturing method of the above-mentioned circuit module. 上記回路モジュールの製造方法を示す模式図である。It is a mimetic diagram showing the manufacturing method of the above-mentioned circuit module. 上記回路モジュールの製造方法を示す模式図である。It is a mimetic diagram showing the manufacturing method of the above-mentioned circuit module. 本発明の第１の実施形態の比較例に係る回路モジュールの断面図である。FIG. 3 is a cross-sectional view of a circuit module according to a comparative example of the first embodiment of the present invention. 本発明の第２の実施形態に係る回路モジュールの断面図である。FIG. 5 is a cross-sectional view of a circuit module according to a second embodiment of the present invention. 本発明の第２の実施形態の変形例に係る回路モジュールの断面図である。FIG. 9 is a cross-sectional view of a circuit module according to a modification of the second embodiment of the present invention.

以下、図面を参照しながら、本発明の実施形態を説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

＜第１の実施形態＞
［回路モジュールの構成］
図１は、本発明の第１の実施形態に係る回路モジュールを示す図である。同図に示すように、回路モジュール１００は、配線基板１０と、発熱部品１４と、放熱ライン１５とを備える。 <First embodiment>
[Configuration of circuit module]
FIG. 1 is a diagram showing a circuit module according to the first embodiment of the present invention. As shown in FIG. 1, the circuit module 100 includes a wiring board 10, a heat-generating component 14, and a heat-dissipating line 15.

（配線基板）
配線基板１０は、多層配線基板であり、表面（一主面）１０ａから発熱部品１４が搭載される開口部１１８が形成されている。すなわち、配線基板１０は、第１の多層配線層（多層配線層）１１と、第２の多層配線層１２と、コア層１３とを有し、コア層１３を挟んで第１の多層配線層１１と第２の多層配線層１２とが配設される。 (Wiring board)
The wiring board 10 is a multilayer wiring board, and has an opening 118 on which the heat-generating component 14 is mounted from the front surface (one main surface) 10a. That is, the wiring board 10 includes a first multilayer wiring layer (multilayer wiring layer) 11, a second multilayer wiring layer 12, and a core layer 13, and the first multilayer wiring layer with the core layer 13 interposed therebetween. 11 and a second multilayer wiring layer 12 are provided.

コア層１３は、コア材１３１と、キャビティ１３２とを有する。コア材１３１は、熱伝導性材料で構成され、本実施形態において例えば銅や銅合金を含む金属材料で構成される。コア材１３１は、例えば、配線基板１０と略同一の平面形状を有し、配線基板１０の側面から露出するように構成される。コア材１３１は、放熱性を向上させるとともに、配線基板１０の剛性の向上や、後述する電磁障害の抑制といった作用を有する。   The core layer 13 has a core material 131 and a cavity 132. The core material 131 is made of a heat conductive material, and in this embodiment, is made of a metal material including, for example, copper or a copper alloy. The core material 131 has, for example, substantially the same planar shape as the wiring board 10 and is configured to be exposed from a side surface of the wiring board 10. The core material 131 has functions of improving heat dissipation, improving rigidity of the wiring board 10, and suppressing electromagnetic interference described later.

コア材１３１には、キャビティ１３２が形成されている。キャビティ１３２は、コア材１３１を貫通するように形成されていてもよいし、貫通しない構成であってもよい。各キャビティ１３２には、内蔵部品１３３が収容される。   A cavity 132 is formed in the core material 131. The cavity 132 may be formed so as to penetrate the core material 131, or may be configured so as not to penetrate. Each cavity 132 accommodates a built-in component 133.

各内蔵部品１３３は、例えばコンデンサ、インダクタ、抵抗、水晶振動子、デュプレクサ、フィルタ、パワーアンプ、集積回路（ＩＣ）等の電子部品であり、それぞれ同一種類の部品であっても、異なる種類の部品であってもよい。また、各キャビティ１３２には、同図に示すように１つの内蔵部品１３３が収容されていてもよいし、複数の内蔵部品１３３が収容されていてもよい。さらに、内蔵部品１３３の厚みも特に限定されず、キャビティ１３２の深さと同程度の厚みであってもよいし、当該深さよりも小さい厚みであってもよい。内蔵部品１３３がコア材１３１に取り囲まれて収容されることで、内蔵部品１３３間や内蔵部品１３３と発熱部品１４との間における電磁波に起因する障害（電磁障害）を抑制することが可能となる。   Each of the built-in components 133 is an electronic component such as a capacitor, an inductor, a resistor, a crystal oscillator, a duplexer, a filter, a power amplifier, and an integrated circuit (IC). It may be. Each cavity 132 may house one built-in component 133 as shown in the figure, or may house a plurality of built-in components 133. Further, the thickness of the built-in component 133 is not particularly limited, and may be approximately the same as the depth of the cavity 132 or may be smaller than the depth. Since the built-in component 133 is surrounded and accommodated by the core material 131, it is possible to suppress an obstacle (electromagnetic interference) caused by an electromagnetic wave between the built-in component 133 and between the built-in component 133 and the heat generating component 14. .

また、内蔵部品１３３は、絶縁性樹脂１３４に被覆されていてもよい。絶縁性樹脂１３４は、キャビティ１３２の内壁面と内蔵部品１３３との間隙、及び内蔵部品１３３と第１の多層配線層１１との間隙等に充填され得る。絶縁性樹脂１３４は、例えば、エポキシ樹脂等の熱硬化性樹脂で構成されてもよく、当該樹脂にはフィラが適宜含有されていてもよい。   Further, the built-in component 133 may be covered with the insulating resin 134. The insulating resin 134 can fill the gap between the inner wall surface of the cavity 132 and the built-in component 133, the gap between the built-in component 133 and the first multilayer wiring layer 11, and the like. The insulating resin 134 may be made of, for example, a thermosetting resin such as an epoxy resin, and the resin may appropriately contain a filler.

第２の多層配線層１２は、例えば、３層の配線層１２１，１２２，１２３と、絶縁層１２４，１２５，１２６と、表層に形成されたソルダレジスト層１２７とを含む積層構造で構成され、コア層１３の一主面上に設けられる。配線層１２１，１２２，１２３と絶縁層１２４，１２５，１２６とは、交互に積層される。３層の配線層１２１，１２２，１２３のうち、配線層１２３は表層配線層であり、配線層１２１，１２２は、内部配線層である。また、ソルダレジスト層１２７と配線層１２３とは、配線基板１０の裏面１０ｂを構成する。なお、配線層及び絶縁層の総数は、これに限定されない。   The second multilayer wiring layer 12 has, for example, a multilayer structure including three wiring layers 121, 122, 123, insulating layers 124, 125, 126, and a solder resist layer 127 formed on the surface. It is provided on one main surface of the core layer 13. The wiring layers 121, 122, 123 and the insulating layers 124, 125, 126 are alternately stacked. Among the three wiring layers 121, 122, and 123, the wiring layer 123 is a surface wiring layer, and the wiring layers 121 and 122 are internal wiring layers. In addition, the solder resist layer 127 and the wiring layer 123 form the back surface 10b of the wiring substrate 10. Note that the total number of wiring layers and insulating layers is not limited to this.

第１の多層配線層１１は、第２の多層配線層１２と同様に、例えば３層の配線層１１１，１１２，１１３と、絶縁層１１４，１１５，１１６と、表層に形成されたソルダレジスト層１１７とを含む積層構造で構成され、コア層１３の第２の多層配線層１２が設けられた主面とは反対側の主面上に設けられる。配線層１１１，１１２，１１３と絶縁層１１４，１１５，１１６とは、交互に積層される。３層の配線層１１１，１１２，１１３のうち、配線層１１３は表層配線層であり、配線層１１１，１１２は内部配線層である。また、ソルダレジスト層１１７と配線層１１３とは、配線基板１０の表面１０ａを構成する。なお、配線層及び絶縁層の総数は、これに限定されない。   Like the second multilayer wiring layer 12, the first multilayer wiring layer 11 includes, for example, three wiring layers 111, 112, and 113, insulating layers 114, 115, and 116, and a solder resist layer formed on the surface layer. 117, and is provided on a main surface of the core layer 13 opposite to the main surface on which the second multilayer wiring layer 12 is provided. The wiring layers 111, 112, 113 and the insulating layers 114, 115, 116 are alternately stacked. Among the three wiring layers 111, 112, and 113, the wiring layer 113 is a surface wiring layer, and the wiring layers 111 and 112 are internal wiring layers. Further, the solder resist layer 117 and the wiring layer 113 form the surface 10 a of the wiring board 10. Note that the total number of wiring layers and insulating layers is not limited to this.

また、第１の多層配線層１１は、複数のビア１１９を有する。ビア１１９は、回路構成に応じて適宜形成され得るが、図１に示す例では、内蔵部品１３３と配線層１１１とを接続するように形成される。   Further, the first multilayer wiring layer 11 has a plurality of vias 119. The via 119 can be formed as appropriate according to the circuit configuration. In the example shown in FIG. 1, the via 119 is formed so as to connect the built-in component 133 and the wiring layer 111.

さらに、第１の多層配線層１１は、開口部１１８を有する。開口部１１８は、表面１０ａからコア層１３に向かって形成され、本実施形態において、コア層１３に達する深さで形成される。   Further, the first multilayer wiring layer 11 has an opening 118. The opening 118 is formed from the surface 10 a toward the core layer 13, and is formed at a depth reaching the core layer 13 in the present embodiment.

開口部１１８は、発熱部品１４を配設する底部１１８ａと、底部１１８ａ及び表面１０ａに連接する壁部１１８ｂとを有する。本実施形態において、底部１１８ａは、コア材１３１で構成される。底部１１８ａの平面形状は、円形状でもよいし多角形状でもよい。一方壁部１１８ｂは、例えば、配線層１１１，１１２がそれぞれ絶縁層１１５，１１６から突出した構成を有する。より具体的には、底部１１８ａに最も近い配線層１１１は、その上の絶縁層１１５から一部露出しており、絶縁層１１５上の配線層１１２は、その上の絶縁層１１６から一部露出している。すなわち、開口部１１８は、配線層１１１，１１２，１１３でそれぞれ開口径が異なる構成とすることができる。   The opening 118 has a bottom 118a on which the heat-generating component 14 is provided, and a wall 118b connected to the bottom 118a and the surface 10a. In the present embodiment, the bottom 118 a is made of the core material 131. The planar shape of the bottom portion 118a may be circular or polygonal. On the other hand, the wall portion 118b has, for example, a configuration in which the wiring layers 111 and 112 protrude from the insulating layers 115 and 116, respectively. More specifically, the wiring layer 111 closest to the bottom 118a is partially exposed from the insulating layer 115 thereon, and the wiring layer 112 on the insulating layer 115 is partially exposed from the insulating layer 116 thereon. are doing. That is, the opening 118 may have a configuration in which the wiring layers 111, 112, and 113 have different opening diameters.

（発熱部品）
発熱部品１４は、開口部１１８の底部１１８ａに配設される。発熱部品１４は、例えば、集積回路（ＩＣ）、コンデンサ、インダクタ、抵抗、デュプレクサ、フィルタ、パワーアンプ等の発熱を伴う電子部品である。また、水晶振動子など、自己発熱しないが冷却する必要がある部品についても発熱部品に含まれるものとする。 (Heating parts)
The heat-generating component 14 is provided at the bottom 118 a of the opening 118. The heat-generating component 14 is, for example, an electronic component that generates heat, such as an integrated circuit (IC), a capacitor, an inductor, a resistor, a duplexer, a filter, and a power amplifier. Components that do not generate heat but need to be cooled, such as a quartz oscillator, are also included in the heat-generating components.

発熱部品１４は、例えば、複数の端子１４１が形成された端子面１４ａと、その反対側の非端子面１４ｂとを有し、例えば、非端子面１４ｂを底部１１８ａに向けて配設されている。これにより、端子面１４ａの端子１４１が上部に露出し、各端子１４１と配線層１１１，１１２とがそれぞれワイヤボンディング等により電気的に接続される。本実施形態の開口部１１８によれば、壁部１１８ｂから配線層１１１，１１２が露出していることから、これらの接続を容易に行うことができる。   The heat generating component 14 has, for example, a terminal surface 14a on which a plurality of terminals 141 are formed, and a non-terminal surface 14b on the opposite side, and is disposed, for example, with the non-terminal surface 14b facing the bottom 118a. . As a result, the terminals 141 on the terminal surface 14a are exposed to the upper part, and the terminals 141 and the wiring layers 111 and 112 are electrically connected to each other by wire bonding or the like. According to the opening 118 of the present embodiment, since the wiring layers 111 and 112 are exposed from the wall 118b, these connections can be easily made.

（放熱ライン）
放熱ライン１５は、配線基板１０内に形成され、発熱部品１４とコア材１３１とを接続する。放熱ライン１５は、本実施形態において、発熱部品１４をコア材１３１に接着させる熱伝導性の接着部材１５１を有する。接着部材１５１は、熱伝導性及び接着性を有する材料であれば特に限定されず、例えば、熱伝導性樹脂、半田等で構成され得る。熱伝導性樹脂としては、例えば、金属フィラを含有したエポキシ樹脂等が挙げられる。 (Heat radiation line)
The heat radiation line 15 is formed in the wiring board 10 and connects the heat generating component 14 and the core material 131. In the present embodiment, the heat radiation line 15 has a heat conductive adhesive member 151 for adhering the heat generating component 14 to the core material 131. The adhesive member 151 is not particularly limited as long as it is a material having thermal conductivity and adhesiveness. For example, the adhesive member 151 may be made of a thermally conductive resin, solder, or the like. Examples of the thermally conductive resin include an epoxy resin containing a metal filler.

次に、回路モジュール１００の製造方法について説明する。   Next, a method for manufacturing the circuit module 100 will be described.

［回路モジュールの製造方法］
図２乃至図４は回路モジュール１００の製造方法を示す模式図である。なお、回路モジュール１００は、一つの集合基板上に複数が同時に製造され、各回路モジュール１００毎に分割されるものとすることができるが、以下ではそのうちの一つの回路モジュール１００について説明する。なお、以下の説明は例示であり、回路モジュール１００の製造方法はこれに限定されない。 [Circuit module manufacturing method]
2 to 4 are schematic diagrams illustrating a method for manufacturing the circuit module 100. Note that a plurality of circuit modules 100 can be manufactured simultaneously on one collective substrate and divided for each circuit module 100. Hereinafter, one of the circuit modules 100 will be described. The following description is an example, and the method of manufacturing the circuit module 100 is not limited to this.

図２に示すように、コア層１３を形成する。まず、配線基板１０（集合基板）の平面形状と略同一で所定厚みの金属板にキャビティ１３２を形成し、コア材１３１を作製する。続いて、コア材１３１と内蔵部品１３３とを粘着シート（図示せず）上の所定位置に配置して仮固定する。次に、コア材１３１のキャビティ１３２上に流体の絶縁材料を充填し、硬化させる。そして、粘着シートを剥離し、コア層１３が形成される。   As shown in FIG. 2, the core layer 13 is formed. First, the cavity 132 is formed in a metal plate having substantially the same planar shape as the wiring substrate 10 (collective substrate) and a predetermined thickness, and the core material 131 is manufactured. Subsequently, the core material 131 and the built-in component 133 are arranged at predetermined positions on an adhesive sheet (not shown) and temporarily fixed. Next, the cavity 132 of the core material 131 is filled with a fluid insulating material and cured. Then, the adhesive sheet is peeled off, and the core layer 13 is formed.

続いて、図３に示すように、コア層１３の上面に第１の多層配線層１１を、下面に第２の多層配線層１２をそれぞれ形成する。まず、コア層１３の上面及び下面に流体の樹脂を塗布し、硬化させ、絶縁層１１４，１２４を形成する。この絶縁層１１４，１２４にレーザ光を照射することで、ビア形成用の孔を形成する。さらに、絶縁層１１４，１２４上にメッキレジスト（図示省略）をパターニングした後、電解メッキによって配線層１１１，１２１を形成する。この際、上記孔にも導体が埋め込まれ、ビア１１９が形成される。同様に、絶縁層１１５，１２５、配線層１１２，１２２、絶縁層１１６，１２６、配線層１１３，１２３及びソルダレジスト層１１７，１２７を順に形成し、第１の多層配線層１１及び第２の多層配線層１２を形成する。   Subsequently, as shown in FIG. 3, a first multilayer wiring layer 11 is formed on the upper surface of the core layer 13 and a second multilayer wiring layer 12 is formed on the lower surface. First, a fluid resin is applied to the upper and lower surfaces of the core layer 13 and cured to form insulating layers 114 and 124. By irradiating the insulating layers 114 and 124 with laser light, holes for forming vias are formed. Furthermore, after patterning a plating resist (not shown) on the insulating layers 114 and 124, the wiring layers 111 and 121 are formed by electrolytic plating. At this time, a conductor is also buried in the hole, and a via 119 is formed. Similarly, the insulating layers 115 and 125, the wiring layers 112 and 122, the insulating layers 116 and 126, the wiring layers 113 and 123, and the solder resist layers 117 and 127 are sequentially formed, and the first multilayer wiring layer 11 and the second multilayer The wiring layer 12 is formed.

続いて、図４に示すように、第１の多層配線層１１に、表面１０ａからコア層１３に向かって開口部１１８を形成する。開口部１１８は、例えば、機械加工によって形成されてもよいし、エッチング法等により形成されてもよい。本実施形態において、まず、ソルダレジスト層１１７、配線層１１３及び絶縁層１１６に第１の開口径の開口を形成する。次に、配線層１１２及び絶縁層１１５に第１の開口径よりも小さい第２の開口径の開口を形成する。さらに、配線層１１１及び絶縁層１１４に第２の開口径よりも小さい第３の開口径の開口を形成する。これにより、コア層１３に近い配線層ほど開口径が小さくなる構成で、かつコア層１３に達する深さの開口部１１８を形成することができる。   Subsequently, as shown in FIG. 4, an opening 118 is formed in the first multilayer wiring layer 11 from the surface 10a toward the core layer 13. The opening 118 may be formed by, for example, machining, or may be formed by an etching method or the like. In this embodiment, first, an opening having a first opening diameter is formed in the solder resist layer 117, the wiring layer 113, and the insulating layer 116. Next, an opening having a second opening diameter smaller than the first opening diameter is formed in the wiring layer 112 and the insulating layer 115. Further, an opening having a third opening diameter smaller than the second opening diameter is formed in the wiring layer 111 and the insulating layer 114. Thus, an opening 118 having a configuration in which the opening diameter becomes smaller as the wiring layer is closer to the core layer 13 and having a depth reaching the core layer 13 can be formed.

そして、図１に示すように、放熱ライン１５を形成し、開口部１１８に発熱部品１４を配設する。まず、開口部１１８の底部１１８ａに露出したコア材１３１上に流動性のある熱伝導性樹脂が塗布され、その上に発熱部品１４が配置される。この熱伝導性樹脂を硬化することで、放熱ライン１５の接着部材１５１が形成される。さらに、発熱部品１４の端子１４１と配線層１１２，１１３とをそれぞれワイヤボンディング等により接続する。これにより、発熱部品１４をコア材１３１上に接着できるとともに、発熱部品１４と配線基板１０との導通を図ることができる。なお、熱伝導性樹脂が発熱部品１４側に塗布された後、当該樹脂が塗布された発熱部品１４を、開口部１１８に露出したコア材１３１上に接着してもよい。   Then, as shown in FIG. 1, the heat radiation line 15 is formed, and the heat generating component 14 is disposed in the opening 118. First, a fluid heat conductive resin is applied on the core material 131 exposed at the bottom 118a of the opening 118, and the heat generating component 14 is disposed thereon. By curing the heat conductive resin, the adhesive member 151 of the heat radiation line 15 is formed. Further, the terminals 141 of the heat-generating component 14 and the wiring layers 112 and 113 are respectively connected by wire bonding or the like. Thus, the heat-generating component 14 can be adhered to the core material 131, and electrical conduction between the heat-generating component 14 and the wiring board 10 can be achieved. After the heat conductive resin is applied to the heat generating component 14 side, the heat generating component 14 to which the resin is applied may be bonded onto the core material 131 exposed at the opening 118.

次に、以上のように製造された回路モジュール１００の作用効果について説明する。   Next, the operation and effect of the circuit module 100 manufactured as described above will be described.

［回路モジュールの作用効果］
図５は、本実施形態の比較例に係る回路モジュール３００の断面図である。回路モジュール３００は、回路モジュール１００と同様の構成の第２の多層配線層１２、コア層１３及び発熱部品１４を備えるが、第１の多層配線層３１と、放熱ライン３５の構成が回路モジュール１００と異なる。第１の多層配線層３１は、開口部を有さず、発熱部品１４が配線基板３０の表面３０ａに配置されている。また、放熱ライン３５は、表面３０ａ上の発熱部品１４とコア材１３１とを接続する複数のサーマルビア３５３を有している。 [Operation and effects of the circuit module]
FIG. 5 is a cross-sectional view of a circuit module 300 according to a comparative example of the present embodiment. The circuit module 300 includes a second multilayer wiring layer 12, a core layer 13, and a heat-generating component 14 having the same configuration as the circuit module 100. However, the first multilayer wiring layer 31 and the heat radiation line 35 have the same configuration as the circuit module 100. And different. The first multilayer wiring layer 31 has no opening, and the heat-generating component 14 is arranged on the surface 30 a of the wiring board 30. Further, the heat radiation line 35 has a plurality of thermal vias 353 for connecting the heat generating component 14 on the surface 30a and the core material 131.

同図の回路モジュール３００によれば、発熱部品１４によって発生した熱がサーマルビア３５３を介してコア材１３１に伝導される。サーマルビア３５３は、第１の多層配線層３１の厚み分の長さを有している。ここで、サーマルビア３５３は、発熱部品１４が出す熱量に対して十分な太さ（物理的な体積）または熱伝導性を有していないため熱容量が足りず、輸送できる熱量に限界があり、発熱部品１４を十分に冷却することが困難であった。また、回路構成の複雑化に伴い、第１の多層配線層３１をより多層化する場合、このような放熱性の問題がより大きくなることが懸念された。   According to the circuit module 300 shown in the figure, the heat generated by the heat generating component 14 is transmitted to the core material 131 via the thermal via 353. The thermal via 353 has a length corresponding to the thickness of the first multilayer wiring layer 31. Here, since the thermal via 353 does not have a sufficient thickness (physical volume) or thermal conductivity with respect to the amount of heat generated by the heat-generating component 14, the thermal capacity is insufficient, and the amount of heat that can be transported is limited. It was difficult to sufficiently cool the heat generating component 14. In addition, when the first multilayer wiring layer 31 is further multi-layered due to the complexity of the circuit configuration, there is a concern that such a problem of heat dissipation may be further increased.

一方、図１に示す本実施形態の回路モジュール１００によれば、開口部１１８及び放熱ライン１５により発熱部品１４をコア材１３１へ直接接着することができるため、配線基板１０へ拡散する熱を大幅に低減することができる。これにより、回路モジュール１００全体としての放熱性を高めることができる。さらに、第１の多層配線層１１が多層化した場合であっても、高い放熱性を維持することが可能となり、回路構成の複雑化にも容易に対応し得る。   On the other hand, according to the circuit module 100 of the present embodiment shown in FIG. 1, the heat generating component 14 can be directly bonded to the core material 131 by the opening 118 and the heat radiation line 15, so that the heat diffused to the wiring board 10 is greatly reduced. Can be reduced. Thereby, the heat radiation of the circuit module 100 as a whole can be improved. Further, even when the first multilayer wiring layer 11 is multi-layered, high heat dissipation can be maintained, and it is possible to easily cope with a complicated circuit configuration.

＜第２の実施形態＞
［回路モジュールの構成］
図６は、本発明の第２の実施形態に係る回路モジュール２００の断面図である。本実施形態に係る回路モジュール２００は、開口部２１８及び放熱ライン２５の構成が回路モジュール１００と異なる。なお、回路モジュール２００において、回路モジュール１００と同様の構成については同一の符号を付し、その説明を省略する。 <Second embodiment>
[Configuration of circuit module]
FIG. 6 is a sectional view of a circuit module 200 according to the second embodiment of the present invention. The circuit module 200 according to the present embodiment is different from the circuit module 100 in the configurations of the opening 218 and the heat radiation line 25. In the circuit module 200, the same components as those of the circuit module 100 are denoted by the same reference numerals, and description thereof will be omitted.

配線基板２０は、回路モジュール１００と同様の構成の第２の多層配線層１２、コア層１３を有し、回路モジュール１００と異なる構成の第１の多層配線層２１を有する。   The wiring board 20 has a second multilayer wiring layer 12 and a core layer 13 having the same configuration as the circuit module 100, and has a first multilayer wiring layer 21 having a configuration different from that of the circuit module 100.

第１の多層配線層２１は、例えば、第２の多層配線層１２と同様に、３層の配線層２１１，２１２，２１３と、絶縁層２１４，２１５，２１６と、表層に形成されたソルダレジスト層２１７とを含む積層構造で構成され、コア層１３の第２の多層配線層１２が設けられた主面とは反対側の主面上に設けられる。配線層２１１，２１２，２１３と絶縁層２１４，２１５，２１６とは、交互に積層される。３層の配線層２１１，２１２，２１３のうち、配線層２１３は表層配線層であり、配線層２１１，２１２は、内部配線層である。また、ソルダレジスト層２１７と配線層２１１とは、配線基板１０の表面２０ａを構成する。さらに、第１の多層配線層２１は、第１の実施形態と同様に、複数のビア２１９を有する。なお、配線層及び絶縁層の総数は、これに限定されない。   The first multilayer wiring layer 21 includes, for example, three wiring layers 211, 212, 213, insulating layers 214, 215, 216, and a solder resist formed on the surface layer, similarly to the second multilayer wiring layer 12. The core layer 13 is provided on a main surface of the core layer 13 opposite to the main surface on which the second multilayer wiring layer 12 is provided. The wiring layers 211, 212, 213 and the insulating layers 214, 215, 216 are alternately stacked. Of the three wiring layers 211, 212, and 213, the wiring layer 213 is a surface wiring layer, and the wiring layers 211 and 212 are internal wiring layers. In addition, the solder resist layer 217 and the wiring layer 211 constitute the surface 20a of the wiring board 10. Further, the first multilayer wiring layer 21 has a plurality of vias 219 as in the first embodiment. Note that the total number of wiring layers and insulating layers is not limited to this.

第１の多層配線層２１は、また、表面２０ａからコア層１３に向かって形成された開口部２１８を有する。開口部２１８は、本実施形態において、内部配線層のうちの配線層２１１に達する深さで形成される。   The first multilayer wiring layer 21 also has an opening 218 formed from the surface 20a toward the core layer 13. In the present embodiment, the opening 218 is formed at a depth reaching the wiring layer 211 of the internal wiring layers.

開口部２１８は、発熱部品２４を配設する底部２１８ａと、底部２１８ａ及び表面２０ａを連接する壁部２１８ｂとを有する。底部２１８ａは、本実施形態において、配線層２１１で構成される。壁部２１８ｂは、配線層２１２，２１３が絶縁層２１４，２１５より突出しない構成でもよく、例えば滑らかな曲面や複数の平坦面で構成され得る。   The opening 218 has a bottom 218a on which the heat-generating component 24 is provided, and a wall 218b connecting the bottom 218a and the surface 20a. The bottom portion 218a is formed of the wiring layer 211 in the present embodiment. The wall portion 218b may have a configuration in which the wiring layers 212 and 213 do not protrude from the insulating layers 214 and 215, and may be configured with, for example, a smooth curved surface or a plurality of flat surfaces.

発熱部品２４は、開口部２１８の底部２１８ａに配設される。本実施形態において、発熱部品２４は、周縁に複数の端子２４１を含む端子面２４１ａと、その反対側の非端子面２４１ｂとを有し、端子面２４ａを底部２１８ａに向けて配設されている。発熱部品２４は、例えば、端子２４１を介して配線層２１１にフリップチップ実装され得る。   The heat generating component 24 is provided at the bottom 218 a of the opening 218. In the present embodiment, the heat-generating component 24 has a terminal surface 241a including a plurality of terminals 241 on the periphery and a non-terminal surface 241b on the opposite side, and is disposed with the terminal surface 24a facing the bottom 218a. . The heat generating component 24 can be flip-chip mounted on the wiring layer 211 via the terminal 241, for example.

放熱ライン２５は、配線基板２０の第１の多層配線層２１内に形成され、発熱部品２４とコア材１３１とを接続する。放熱ライン２５は、本実施形態において、発熱部品２４を接着させる熱伝導性の接着部材２５１と、熱伝導性の柱状体２５２とを有する。接着部材２５１は、発熱部品２４の端子面２４ａと柱状体２５２とを接着する。より詳しくは、接着部材２５１は、端子面２４ａにおける端子２４１が形成されていない中央部に接着され得る。接着部材２５１は、本実施形態において半田で構成されるが、熱伝導性樹脂であってもよい。   The heat radiation line 25 is formed in the first multilayer wiring layer 21 of the wiring board 20 and connects the heat generating component 24 and the core material 131. In the present embodiment, the heat radiation line 25 has a heat conductive adhesive member 251 for bonding the heat generating component 24 and a heat conductive column 252. The bonding member 251 bonds the terminal surface 24a of the heat generating component 24 to the columnar body 252. More specifically, the bonding member 251 can be bonded to a central portion of the terminal surface 24a where the terminal 241 is not formed. The bonding member 251 is formed of solder in the present embodiment, but may be formed of a thermally conductive resin.

柱状体２５２は、接着部材２５１とコア材１３１とを接続し、ビア２１９よりも大きな径を有する。柱状体２５２は、例えば、熱伝導性樹脂で構成されるが、金属等であってもよい。   The columnar body 252 connects the adhesive member 251 and the core material 131, and has a larger diameter than the via 219. The columnar body 252 is made of, for example, a heat conductive resin, but may be a metal or the like.

［回路モジュールの製造方法］
回路モジュール２００の製造方法のうち、コア層１３の形成工程と、第１の多層配線層２１及び第２の多層配線層１２の形成工程は、第１の実施形態と同様である。したがって、開口部２１８の形成工程と、放熱ライン２５の形成工程について説明する。 [Circuit module manufacturing method]
In the method of manufacturing the circuit module 200, the step of forming the core layer 13 and the step of forming the first multilayer wiring layer 21 and the second multilayer wiring layer 12 are the same as in the first embodiment. Therefore, the process of forming the opening 218 and the process of forming the heat radiation line 25 will be described.

第１の多層配線層２１及び第２の多層配線層１２を形成した後、第１の多層配線層２１に、表面２０ａからコア層１３に向かって開口部２１８を形成する。開口部２１８は、機械加工等により形成される。本実施形態において、開口部２１８は、配線層２１１に達する深さで形成され、開口径は深さ方向に沿って略一定であってもよい。   After forming the first multilayer wiring layer 21 and the second multilayer wiring layer 12, an opening 218 is formed in the first multilayer wiring layer 21 from the surface 20 a toward the core layer 13. The opening 218 is formed by machining or the like. In the present embodiment, the opening 218 is formed at a depth reaching the wiring layer 211, and the opening diameter may be substantially constant along the depth direction.

続いて、柱状体２５２を形成する。柱状体２５２は、例えば機械加工等によって開口部２１８の底部２１８ａからコア材１３１に向かって孔が形成され、当該孔に流体の熱伝導性樹脂が充填され、硬化されることで形成される。   Subsequently, a columnar body 252 is formed. The columnar body 252 is formed by forming a hole from the bottom 218a of the opening 218 toward the core material 131 by, for example, machining, filling the hole with a fluid heat conductive resin, and curing the resin.

続いて、開口部２１８の柱状体２５２上に発熱部品２４を配設する。まず、柱状体２５２上、及び端子２４１が接続される配線層２１１上に半田ペーストが塗布され、当該半田ペースト上に発熱部品２４が搭載される。さらに、この発熱部品２４が搭載された配線基板２０をリフロー炉へ搬入し、半田ペーストをリフローすることで、発熱部品２４が開口部２１８に半田付けされる。以上のように、回路モジュール２００が製造される。   Subsequently, the heat-generating component 24 is disposed on the column 252 of the opening 218. First, a solder paste is applied on the columnar body 252 and the wiring layer 211 to which the terminals 241 are connected, and the heat generating component 24 is mounted on the solder paste. Further, the wiring board 20 on which the heat-generating component 24 is mounted is carried into a reflow furnace, and the heat-generating component 24 is soldered to the opening 218 by reflowing the solder paste. As described above, the circuit module 200 is manufactured.

［回路モジュールの作用効果］
本実施形態によっても、第１の実施形態と同様に、発熱部品２４とコア材１３１との距離を短縮することができるため、配線基板２０へ拡散する熱を大幅に低減することができる。また、柱状体２５２が一本の柱状で構成されるため、表面積当たりの体積を比較的大きく構成することができる。これにより、絶縁材料と接触する面積を低減して配線基板２０へ拡散する熱を大幅に低減することができるとともに、より効率的にコア材１３１へ熱を伝導することが可能となる。 [Effects of circuit module]
According to the present embodiment, similarly to the first embodiment, the distance between the heat-generating component 24 and the core material 131 can be reduced, so that the heat diffused to the wiring board 20 can be significantly reduced. Further, since the columnar body 252 is formed in a single columnar shape, the volume per surface area can be configured to be relatively large. Accordingly, the area of contact with the insulating material can be reduced and the heat diffused into the wiring board 20 can be significantly reduced, and the heat can be more efficiently conducted to the core material 131.

［変形例］
図７は、第２の実施形態の変形例に係る回路モジュール２００の断面図である。同図に示すように、放熱ライン２５は、柱状体２５２に替えて、複数のサーマルビア２５３を有していてもよい。これによっても、配線基板２０へ拡散する熱を低減することができる。 [Modification]
FIG. 7 is a sectional view of a circuit module 200 according to a modification of the second embodiment. As shown in the figure, the heat radiation line 25 may have a plurality of thermal vias 253 instead of the pillars 252. This can also reduce the heat that diffuses to the wiring board 20.

あるいは、第２の実施形態において、開口部２１８は配線層２１１に達する深さを有する構成に限定されず、配線層２１２に達する深さで形成されてもよい。あるいは、回路モジュール２００がより多層の配線層を含む第１の多層配線層２１を有する場合には、開口部２１８が、任意の内部配線層に達する深さで形成されることができる。   Alternatively, in the second embodiment, the opening 218 is not limited to a configuration having a depth reaching the wiring layer 211, and may be formed to have a depth reaching the wiring layer 212. Alternatively, when the circuit module 200 has the first multilayer wiring layer 21 including a multilayer wiring layer, the opening 218 can be formed to a depth reaching any internal wiring layer.

第１の実施形態における発熱部品１４の実装方法はワイヤボンディングに限定されず、例えば端子面１４ａを開口部１１８へ向けてフリップチップ実装されてもよい。この場合は、第２の実施形態と同様に、接着部材１５１を半田で構成することができる。   The method for mounting the heat-generating component 14 in the first embodiment is not limited to wire bonding. For example, flip-chip mounting may be performed with the terminal surface 14a facing the opening 118. In this case, as in the second embodiment, the adhesive member 151 can be formed of solder.

さらに、上述の実施形態において、放熱ライン１５，２５が接着部材１５１，２５１を有さない構成としてもよい。   Further, in the above-described embodiment, the heat radiation lines 15 and 25 may not have the adhesive members 151 and 251.

また、回路モジュール１００，２００の配線基板１０，２０は、部品内蔵配線基板に限定されず、所期の回路構成を実現できる配線基板として構成することができる。また、発熱部品１４，２４や内蔵部品１３３の数も、特に限定されない。   In addition, the wiring boards 10 and 20 of the circuit modules 100 and 200 are not limited to the wiring boards with built-in components, and can be configured as wiring boards that can realize an intended circuit configuration. Further, the numbers of the heat-generating components 14 and 24 and the built-in components 133 are not particularly limited.

１０，２０…配線基板
１０ａ，２０ａ…表面（一主面）
１１，２１…第１の多層配線層（多層配線層）
１１８，２１８…開口部
１１９，２１９…ビア
１３…コア層
１３１…コア材
１３２…キャビティ
１４，２４…発熱部品
１５，２５…放熱ライン
１５１，２５１…接着部材
２５２…柱状体 10, 20: Wiring board 10a, 20a: Surface (one main surface)
11, 21... First multilayer wiring layer (multilayer wiring layer)
118,218 ... Opening 119,219 ... Via 13 ... Core layer 131 ... Core material 132 ... Cavity 14,24 ... Heat generating component 15,25 ... Heat radiation line 151,251 ... Adhesive member 252 ... Column

Claims (4)

熱伝導性のコア材を含むコア層と、一主面から前記コア層に向かって形成された開口部及び前記開口部の底部に設けられた配線層を含み前記コア層上に設けられた多層配線層とを有する配線基板と、
前記開口部の前記底部に配設され、当該底部と対向し、前記配線層に接続される複数の端子が設けられた端子面を有し、前記底部及び前記一主面を連接する壁部との間の全周にわたって空間が形成された発熱部品と、
前記配線基板内に形成され前記発熱部品の端子面と前記コア材とを接続する放熱ラインと
を具備する回路モジュール。 A core layer including a thermally conductive core material, and a multilayer provided on the core layer including an opening formed from one main surface toward the core layer and a wiring layer provided at a bottom of the opening. A wiring board having a wiring layer;
Disposed on said bottom of said opening, opposite to the said bottom has a terminal surface which a plurality of terminals are provided to be connected to the wiring layer, and a wall portion for connecting said bottom and said one main surface A heat-generating component in which a space is formed over the entire circumference between
A circuit module comprising: a heat radiation line formed in the wiring board and connecting a terminal surface of the heat generating component and the core material. 請求項１に記載の回路モジュールであって、
前記放熱ラインは、前記発熱部品を接着させる熱伝導性の接着部材を有する
回路モジュール。 The circuit module according to claim 1, wherein
The circuit module, wherein the heat radiating line includes a heat conductive bonding member that bonds the heat generating component. 請求項２に記載の回路モジュールであって、
前記配線基板は、複数のビアをさらに有し、
前記放熱ラインは、前記接着部材と前記コア材とを接続し前記ビアよりも大きな径を有する熱伝導性の柱状体を有する
回路モジュール。 The circuit module according to claim 2, wherein
The wiring board further has a plurality of vias,
The heat dissipation line is a circuit module that has a thermally conductive columnar body that connects the adhesive member and the core material and has a larger diameter than the via. 請求項１から３のうちのいずれか１項に記載の回路モジュールであって、
前記コア層は、電子部品を収容し前記コア材に形成されたキャビティをさらに有する
回路モジュール。 The circuit module according to any one of claims 1 to 3 , wherein:
The circuit module, wherein the core layer further accommodates an electronic component and has a cavity formed in the core material.
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