JP2008283195A - アラインマーク、該アラインマークを具備する半導体チップ、該半導体チップを具備する半導体パッケージ並びに該半導体チップ及び該半導体パッケージの製造方法 - Google Patents
アラインマーク、該アラインマークを具備する半導体チップ、該半導体チップを具備する半導体パッケージ並びに該半導体チップ及び該半導体パッケージの製造方法 Download PDFInfo
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Abstract
【解決手段】基板上に位置して電気的に孤立されたアライン金属パッド14aを具備するアラインマークAKであり、該アライン金属パッドの一部分を露出させる開口部15aを具備する保護膜15が配され、該開口部内に露出された該アライン金属パッド上に、該保護膜に比べて上部に突出したアライン金属バンプ18aが配され、該アライン金属バンプの反射度が大きいため、該アライン金属バンプと該保護膜とのコントラストが増大し、アライメント装置においてアラインマークを認識する比率を向上させることができる。
【選択図】図2D
Description
12 絶縁膜、
13 プラグ電極、
14a アライン金属パッド、
14b チップ金属パッド、
15 保護膜、
15a 第1開口部、
15b 第2開口部、
16 シード金属接着層、
17 シード金属層、
18a アライン金属バンプ、
18b チップ金属バンプ、
20 マスクパターン、
20a 第3開口部、
20b 第4開口部、
100 半導体チップ、
200 配線基板、
201 上部基板、
210 ボンディングパッド、
220 表面絶縁膜、
220a 溝、
AK アラインマーク、
C メイン回路領域、
D ディスプレイ素子部、
P 画素アレイ部、
TP 端子パッド、
W_15a 第1開口部の幅、
W_18a アライン金属バンプの上部幅。
Claims (23)
- アラインマーク領域及び端子パッド領域を具備する基板と、
前記アラインマーク領域上に位置するアライン金属パッドと、
前記端子パッド領域上に位置するチップ金属パッドと、
前記アライン金属パッドの一部分を露出させる第1開口部と、前記チップ金属パッドの一部分を露出させる第2開口部とを具備する保護膜と、
前記第1開口部内に露出された前記アライン金属パッド上に配され、前記保護膜の反基板側の端面に比べて反基板側に突出したアライン金属バンプと、を備えることを特徴とする半導体チップ。 - 前記第2開口部内に露出された前記チップ金属パッド上に配され、前記保護膜の反基版側の端面に比べて反基板側に突出したチップ金属バンプをさらに備えることを特徴とする請求項1に記載の半導体チップ。
- 前記アライン金属バンプは、前記保護膜上に延長されることを特徴とする請求項1に記載の半導体チップ。
- 前記アライン金属パッドと前記アライン金属バンプとの間に介在されたシード金属層をさらに備えることを特徴とする請求項1に記載の半導体チップ。
- 基板上に形成され、電気的に他と絶縁されたアライン金属パッドと、
前記アライン金属パッドの一部分を露出させる開口部を具備する保護膜と、
前記開口部内に露出された前記アライン金属パッド上に配され、前記保護膜の反基板側の端面に比べて反基板側に突出したアライン金属バンプと、を備えることを特徴とするアラインマーク。 - 前記アライン金属バンプは、前記保護膜上に延長されることを特徴とする請求項5に記載のアラインマーク。
- 前記アライン金属パッドと前記アライン金属バンプとの間に介在されたシード金属層をさらに備えることを特徴とする請求項5に記載のアラインマーク。
- ボンディングパッドを具備する配線基板と、
アラインマーク領域及び端子パッド領域を具備する半導体基板と、
前記アラインマーク領域上に位置するアライン金属パッドと、
前記端子パッド領域上に位置するチップ金属パッドと、
前記アライン金属パッドの一部分を露出させる第1開口部と、前記チップ金属パッドの一部分を露出させる第2開口部とを具備する保護膜と、
前記第1開口部内に露出された前記アライン金属パッド上に配され、前記保護膜の反基板側の端面に比べて反基板側に突出したアライン金属バンプを具備する半導体チップと、を備え、
前記ボンディングパッドと前記チップ金属パッドとは、電気的に結合されていることを特徴とする半導体パッケージ。 - 前記配線基板上に配され、前記ボンディングパッドと電気的に結合されているディスプレイ素子部をさらに備えることを特徴とする請求項8に記載の半導体パッケージ。
- 前記半導体チップは、前記第2開口部内に露出された前記チップ金属パッド上に配されて前記保護膜の反基板側の端面に比べて反基板側に突出したチップ金属バンプをさらに備え、
前記ボンディングパッドと前記チップ金属パッドとの間に前記チップ金属バンプが介在されていることを特徴とする請求項8に記載の半導体パッケージ。 - 前記アライン金属バンプは、前記保護膜上に延長されることを特徴とする請求項8に記載の半導体パッケージ。
- 前記アライン金属パッドと前記アライン金属バンプとの間に介在されたシード金属層をさらに備えることを特徴とする請求項8に記載の半導体パッケージ。
- アラインマーク領域及び端子パッド領域を具備する基板を提供する段階と、
前記アラインマーク領域上にアライン金属パッドと、前記端子パッド領域上にチップ金属パッドとをそれぞれ形成する段階と、
前記アライン金属パッドの一部分を露出させる第1開口部と、前記チップ金属パッドの一部分を露出させる第2開口部とを具備する保護膜を形成する段階と、
前記第1開口部内に露出された前記アライン金属パッド上に、前記保護膜の反基板側の端面に比べて反基板側に突出したアライン金属バンプを形成する段階と、を含むことを特徴とする半導体チップの製造方法。 - 前記アライン金属バンプを形成すると同時に、前記第2開口部内に露出された前記チップ金属パッド上に、前記保護膜の反基板側の端面に比べて反基板側に突出したチップ金属バンプを形成することを特徴とする請求項13に記載の半導体チップの製造方法。
- 前記アライン金属バンプ及び前記チップ金属バンプを形成する前に、
前記第1開口部内に露出された前記アライン金属パッド上と、前記第2開口部内に露出された前記チップ金属パッド上とにシード金属層を形成する段階をさらに含むことを特徴とする請求項14に記載の半導体チップの製造方法。 - 前記アライン金属バンプ及び前記チップ金属バンプは、電解メッキ法を使用して形成することを特徴とする請求項15に記載の半導体チップの製造方法。
- 前記アライン金属バンプは、前記保護膜上に延長するように形成することを特徴とする請求項13に記載の半導体チップの製造方法。
- アラインマーク領域及び端子パッド領域を具備する基板と、前記アラインマーク領域上に位置するアライン金属パッドと、前記端子パッド領域上に位置するチップ金属パッドと、前記アライン金属パッドの一部分を露出させる第1開口部と前記チップ金属パッドの一部分を露出させる第2開口部とを具備する保護膜と、前記第1開口部内に露出された前記アライン金属パッド上に配され、前記保護膜の反基板側の端面に比べて反基板側に突出したアライン金属バンプを備える半導体チップとを提供する段階と、
ボンディングパッドを具備する配線基板を提供する段階と、
前記アライン金属バンプをアライメントするための指標として使用し、前記半導体チップを前記配線基板上にアラインする段階と、
前記ボンディングパッドと前記チップ金属パッドとを電気的に結合する段階と、を含むことを特徴とする半導体パッケージの製造方法。 - 前記配線基板は、前記ボンディングパッドに電気的に結合されているディスプレイ素子部を具備することを特徴とする請求項18に記載の半導体パッケージの製造方法。
- 前記半導体チップは、前記第2開口部内に露出された前記チップ金属パッド上に配されて前記保護膜の反基板側の端面に比べて反基板側に突出したチップ金属バンプをさらに備え、
前記半導体チップは、前記配線基板上に前記チップ金属バンプが前記ボンディングパッドに対向するようにアラインされ、
前記ボンディングパッドと前記チップ金属パッドは、前記チップ金属バンプを介して電気的に結合されることを特徴とする請求項18に記載の半導体パッケージの製造方法。 - 前記アライン金属バンプは、前記保護膜上に延長されることを特徴とする請求項18に記載の半導体パッケージの製造方法。
- 前記半導体チップは、前記アライン金属パッドと前記アライン金属バンプとの間に介在されたシード金属層をさらに具備することを特徴とする請求項18に記載の半導体パッケージの製造方法。
- 基板上にアライン金属パッドを提供する段階と、
前記アライン金属パッドの一部分を露出させる第1開口部を有する保護膜を提供する段階と、
前記第1開口部内に露出された前記アライン金属パッド上に配され、前記保護膜の反基板側の端面に比べて反基板側に突出したアライン金属バンプを提供する段階と、を含むことを特徴とするアラインマークの製造方法。
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