JP2008251731A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2008251731A JP2008251731A JP2007089688A JP2007089688A JP2008251731A JP 2008251731 A JP2008251731 A JP 2008251731A JP 2007089688 A JP2007089688 A JP 2007089688A JP 2007089688 A JP2007089688 A JP 2007089688A JP 2008251731 A JP2008251731 A JP 2008251731A
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Abstract
【解決手段】複数の半導体チップ11、12および13と、外形が略長方形の回路基板14とを備え、複数の半導体チップ11、12および13が、回路基板14の半導体チップ実装面に並列に配置され、複数の半導体チップ11、12および13を封止するために、封止樹脂15により回路基板14の外縁に沿って半導体チップ実装面が覆われたMCM型のパッケージ構造を有するMCM10であって、半導体チップ実装面を長手方向に対して2等分する長手方向分断面Lと、半導体チップ実装面を短手方向に対して2等分する短手方向分断面Sとが交差する中心線Cを横切って搭載される半導体チップ11は、半導体チップ実装面に垂直な方向の厚みが、半導体チップ実装面に搭載されている他の半導体チップ12および13の厚みよりも大きい。
【選択図】図1
Description
本発明の一実施形態について図面に基づいて説明すれば、以下の通りである。
本発明の他の実施の形態について図面に基づいて説明すれば、以下の通りである。なお、本実施の形態において説明すること以外の構成は、前記実施の形態1と同じである。また、説明の便宜上、前記実施の形態1の図面に示した部材と同一の機能を有する部材については、同一の符号を付し、その説明を省略する。
本発明の他の実施の形態について図面に基づいて説明すれば、以下の通りである。なお、本実施の形態において説明すること以外の構成は、前記実施の形態1および2と同じである。また、説明の便宜上、前記実施の形態1および2の図面に示した部材と同一の機能を有する部材については、同一の符号を付し、その説明を省略する。
11〜13 半導体チップ
14 回路基板
15 封止樹脂
16 ボンディングワイヤ
17 外部端子
18 ボンディングパッド
19 外部端子
51,52 積層型半導体チップ
53 半導体チップ
61 半導体チップ
62 放熱板(反り防止部材)
71〜73 積層型半導体チップ
81〜83 半導体チップ
C 中心線
P 屈曲点
L 長手方向分断面
S 短手方向分断面
Claims (15)
- 複数の半導体チップと、外形が略長方形の回路基板とを備え、上記複数の半導体チップが、上記回路基板の上記複数の半導体チップを実装する半導体チップ実装面に並列に配置され、当該複数の半導体チップを封止するために、封止樹脂により上記回路基板の外縁に沿って上記半導体チップ実装面が覆われたMCM型のパッケージ構造を有する半導体装置であって、
上記半導体チップ実装面を長手方向に対して2等分する長手方向分断面と、上記半導体チップ実装面を短手方向に対して2等分する短手方向分断面とが交差する中心線を横切って搭載される半導体チップは、上記半導体チップ実装面に垂直な方向の厚みが、上記半導体チップ実装面に搭載されている他の半導体チップの上記厚みよりも大きいことを特徴とする半導体装置。 - 上記中心線を横切って搭載される半導体チップは、上記半導体チップ実装面に対面して実装された表面の面積が、上記半導体チップ実装面に搭載されている他の半導体チップの上記表面の面積よりも大きいことを特徴とする請求項1に記載の半導体装置。
- 上記回路基板は、上記半導体チップ実装面に垂直な方向の厚みが、上記中心線を横切って搭載される半導体チップの上記厚みよりも小さいことを特徴とする請求項1または2に記載の半導体装置。
- 上記中心線を横切って搭載される半導体チップの上記厚みは、上記封止樹脂における上記半導体チップ実装面に垂直な方向の厚みの2分の1以上であることを特徴とする請求項1、2または3に記載の半導体装置。
- 上記MCM型のパッケージ構造は、上記半導体チップ実装面のアスペクト比が4以上、かつ、上記回路基板における上記半導体チップ実装面に垂直な方向の厚みと、上記封止樹脂における上記半導体チップ実装面に垂直な方向の厚みと足した合計厚みが600μm以下の構造を含むことを特徴とする請求項1〜4のいずれか1項に記載の半導体装置。
- 少なくとも3個以上の複数の半導体チップと、外形が略長方形の回路基板とを備え、上記複数の半導体チップが、単体の状態または積層型に構成された状態で上記回路基板の上記複数の半導体チップを実装する半導体チップ実装面に並列に配置され、当該複数の半導体チップを封止するために、封止樹脂により上記回路基板の外縁に沿って上記半導体チップ実装面が覆われたMCM型のパッケージ構造を有する半導体装置であって、
上記半導体チップ実装面を長手方向に対して2等分する長手方向分断面と、上記半導体チップ実装面を短手方向に対して2等分する短手方向分断面とが交差する中心線を横切って搭載される単体の状態または積層型に構成された状態の半導体チップは、上記半導体チップ実装面に垂直な方向の総厚が、上記半導体チップ実装面に搭載されている単体の状態または積層型に構成された状態の他の半導体チップの上記総厚よりも大きいことを特徴とする半導体装置。 - 上記回路基板は、上記半導体チップ実装面に垂直な方向の厚みが、上記中心線を横切って搭載される単体の状態または積層型に構成された状態の半導体チップの上記総厚よりも小さいことを特徴とする請求項6に記載の半導体装置。
- 上記中心線を横切って搭載される単体の状態または積層型に構成された状態の半導体チップの上記総厚は、上記封止樹脂における上記半導体チップ実装面に垂直な方向の厚みの2分の1以上であることを特徴とする請求項6または7に記載の半導体装置。
- 上記MCM型のパッケージ構造は、上記半導体チップ実装面のアスペクト比が4以上、かつ、上記回路基板における上記半導体チップ実装面に垂直な方向の厚みと、上記封止樹脂における上記半導体チップ実装面に垂直な方向の厚みと足した合計厚みが600μm以下の構造を含むことを特徴とする請求項6、7または8に記載の半導体装置。
- 複数の半導体チップと、外形が略長方形の回路基板とを備え、上記複数の半導体チップが、単体の状態または積層型に構成された状態で上記回路基板の上記複数の半導体チップを実装する半導体チップ実装面に並列に配置され、当該複数の半導体チップを封止するために、封止樹脂により上記回路基板の外縁に沿って上記半導体チップ実装面が覆われたMCM型のパッケージ構造を有する半導体装置であって、
上記半導体チップ実装面を長手方向に対して2等分する長手方向分断面と、上記半導体チップ実装面を短手方向に対して2等分する短手方向分断面とが交差する中心線を横切って搭載される単体の状態または積層型に構成された状態の半導体チップは、反り防止部材を積層しており、
上記半導体チップ実装面に垂直な方向における、該半導体チップの総厚と該反り防止部材の厚みと足した合計厚みが、上記半導体チップ実装面に搭載されている単体の状態または積層型に構成された状態の他の半導体チップの上記半導体チップ実装面に垂直な方向の総厚よりも大きいことを特徴とする半導体装置。 - 上記回路基板は、上記半導体チップ実装面に垂直な方向の厚みが、上記中心線を横切って搭載される単体の状態または積層型に構成された状態で反り防止部材を積層した半導体チップの上記合計厚みよりも小さいことを特徴とする請求項10に記載の半導体装置。
- 上記中心線を横切って搭載される単体の状態または積層型に構成された状態で反り防止部材を積層した半導体チップの上記合計厚みは、上記封止樹脂における上記半導体チップ実装面に垂直な方向の厚みの2分の1以上であることを特徴とする請求項10または11に記載の半導体装置。
- 上記MCM型のパッケージ構造は、上記半導体チップ実装面のアスペクト比が4以上、かつ、上記回路基板における上記半導体チップ実装面に垂直な方向の厚みと、上記封止樹脂における上記半導体チップ実装面に垂直な方向の厚みと足した合計厚みが600μm以下の構造を含むことを特徴とする請求項10、11または12に記載の半導体装置。
- 上記反り防止部材は、金属からなる放熱板または電磁気シールド板であることを特徴とする請求項10に記載の半導体装置。
- 複数の半導体チップと、外形が略長方形の回路基板とを備え、上記複数の半導体チップが、上記回路基板の上記複数の半導体チップを実装する半導体チップ実装面に並列に配置され、当該複数の半導体チップを封止するために、封止樹脂により上記回路基板の外縁に沿って上記半導体チップ実装面が覆われたMCM型のパッケージ構造を有する半導体装置であって、
上記半導体チップ実装面を長手方向に対して3分の1毎の区間に区切り、該3つの区間のうち、上記半導体チップ実装面を長手方向に対して2等分する長手方向分断面と、上記半導体チップ実装面を短手方向に対して2等分する短手方向分断面とが交差する中心線を含む区間に屈曲点が存在しないことを特徴とする半導体装置。
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