JP2008204995A - 半導体ウエハの研磨方法 - Google Patents
半導体ウエハの研磨方法 Download PDFInfo
- Publication number
- JP2008204995A JP2008204995A JP2007036128A JP2007036128A JP2008204995A JP 2008204995 A JP2008204995 A JP 2008204995A JP 2007036128 A JP2007036128 A JP 2007036128A JP 2007036128 A JP2007036128 A JP 2007036128A JP 2008204995 A JP2008204995 A JP 2008204995A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- chuck
- plate
- partition member
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000007517 polishing process Methods 0.000 title abstract description 9
- 238000005498 polishing Methods 0.000 claims abstract description 43
- 239000012530 fluid Substances 0.000 claims abstract description 41
- 238000005192 partition Methods 0.000 claims abstract description 37
- 238000009423 ventilation Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 61
- 238000000034 method Methods 0.000 description 18
- 239000000919 ceramic Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000006121 base glass Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】チャックプレート1を通気部材で形成すると共に内側円形状プレート1aと外側環状プレート1bとに形成しすると共に間に不通気性の仕切部材3を上面を平坦状にして嵌入させる。チャックホルダー2は不通気性部材で形成すると共に、仕切部材3に連繋する内側流体流通部4と外側流体流通部5とを形成したユニバーサルチャックを用いてチャックプレート1の仕切部材3の内側と外側にわたってバキュームさせて研磨加工中は内側流体流通部4と外側流体流通部5との両方を負圧にし、仕切部材3の内側のみバキュームさせて研磨加工中は内側流体流通部4は負圧にし外側流体流通部5は加圧にする。
【選択図】図1
Description
1 チャックプレート
1a 内側円形状プレート
1b 外側環状プレート
2 チャックホルダー
3 仕切部材
4 内側流体流通部
5 外側流体流通部
Claims (1)
- 上面に半導体ウエハをバキューム吸着する円板状のチャックプレートと、該チャックプレートを嵌着させるカップ状のチャックホルダーとから成り、前記チャックプレートは通気部材で形成すると共に内側円形状プレートと外側環状プレートとに形成し、該内側円形状プレートと外側環状プレートとの間に不通気性のリング状の仕切部材を上面を平坦状にして嵌入させ、前記チャックホルダーは不通気性部材で形成すると共に前記仕切部材の内側と外側に夫々連繋する内側流体流通部と外側流体流通部とを形成したユニバーサルチャックを用いて、前記チャックプレートの上面の仕切部材の内側と外側にわたって半導体ウエハをバキュームさせて研磨加工中は内側流体流通部と外側流体流通部との両方を負圧にし、仕切部材の内側のみに半導体ウエハをバキュームさせて研磨加工中は内側流体流通部は負圧にし外側流体流通部は加圧にすることを特徴とする半導体ウエハの研磨方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007036128A JP2008204995A (ja) | 2007-02-16 | 2007-02-16 | 半導体ウエハの研磨方法 |
KR1020070049475A KR20080076669A (ko) | 2007-02-16 | 2007-05-22 | 반도체 웨이퍼의 연마방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007036128A JP2008204995A (ja) | 2007-02-16 | 2007-02-16 | 半導体ウエハの研磨方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008204995A true JP2008204995A (ja) | 2008-09-04 |
Family
ID=39782231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007036128A Pending JP2008204995A (ja) | 2007-02-16 | 2007-02-16 | 半導体ウエハの研磨方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2008204995A (ja) |
KR (1) | KR20080076669A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009056518A (ja) * | 2007-08-30 | 2009-03-19 | Kyocera Corp | 吸着装置およびそれを備えた加工システムならびに加工方法 |
JP2013215868A (ja) * | 2012-04-12 | 2013-10-24 | Disco Corp | チャックテーブル |
JP7353715B2 (ja) | 2019-10-25 | 2023-10-02 | 株式会社ディスコ | 被加工物の研削方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09174364A (ja) * | 1995-12-20 | 1997-07-08 | Shibayama Kikai Kk | 半導体ウエハのユニバーサルチャックテーブル |
JP2003257909A (ja) * | 2002-03-04 | 2003-09-12 | Nippei Toyama Corp | 半導体ウェーハの加工装置 |
JP2003332410A (ja) * | 2002-05-17 | 2003-11-21 | Tokyo Seimitsu Co Ltd | 真空吸着装置 |
-
2007
- 2007-02-16 JP JP2007036128A patent/JP2008204995A/ja active Pending
- 2007-05-22 KR KR1020070049475A patent/KR20080076669A/ko not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09174364A (ja) * | 1995-12-20 | 1997-07-08 | Shibayama Kikai Kk | 半導体ウエハのユニバーサルチャックテーブル |
JP2003257909A (ja) * | 2002-03-04 | 2003-09-12 | Nippei Toyama Corp | 半導体ウェーハの加工装置 |
JP2003332410A (ja) * | 2002-05-17 | 2003-11-21 | Tokyo Seimitsu Co Ltd | 真空吸着装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009056518A (ja) * | 2007-08-30 | 2009-03-19 | Kyocera Corp | 吸着装置およびそれを備えた加工システムならびに加工方法 |
JP2013215868A (ja) * | 2012-04-12 | 2013-10-24 | Disco Corp | チャックテーブル |
JP7353715B2 (ja) | 2019-10-25 | 2023-10-02 | 株式会社ディスコ | 被加工物の研削方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20080076669A (ko) | 2008-08-20 |
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