JP2008203638A - 基板の処理方法及びレジスト膜の表面に塗布される上層膜剤用のプリウェット溶剤 - Google Patents
基板の処理方法及びレジスト膜の表面に塗布される上層膜剤用のプリウェット溶剤 Download PDFInfo
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- JP2008203638A JP2008203638A JP2007040986A JP2007040986A JP2008203638A JP 2008203638 A JP2008203638 A JP 2008203638A JP 2007040986 A JP2007040986 A JP 2007040986A JP 2007040986 A JP2007040986 A JP 2007040986A JP 2008203638 A JP2008203638 A JP 2008203638A
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- upper layer
- wafer
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- layer film
- film
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
【解決手段】上層膜形成装置には、スピンチャック130と、上層膜を形成するための上層膜剤を吐出する第1のノズル143と、上層膜剤用のプリウェット溶剤Aを吐出する第2のノズル150が設けられる。第2のノズル150から吐出されるプリウェット溶剤Aには、炭素数1〜10の一価または二価のアルコール類、炭素数1〜8のハロゲンを置換基として有していてもよいアルキル基を有するエーテル類、及び炭素数7〜11の炭化水素類の中から選ばれる一種以上の化合物を含有しているものが用いられる。ノズル150からプリウェット溶剤Aが吐出され、当該プリウェット溶剤Aがレジスト膜の表面に塗布される。その後ノズル143から上層膜剤が吐出され、上層膜剤がスピン塗布法によりレジスト膜の表面に塗布されて上層膜が形成される。
【選択図】図5
Description
33 上層膜形成装置
130 スピンチャック
143 第1のノズル
150 第2のノズル
A 上層膜剤用のプリウェット溶剤
B 上層膜剤
P 上層膜
R レジスト膜
W ウェハ
Claims (3)
- スピン塗布法により基板上のレジスト膜の表面に上層膜剤を塗布してレジスト膜上に上層膜を形成する工程を有する基板の処理方法であって、
前記上層膜剤を塗布する前に、レジスト膜の表面に上層膜剤用のプリウェット溶剤を塗布する工程を有し、
前記上層膜剤用のプリウェット溶剤は、炭素数1〜10の一価または二価のアルコール類、炭素数1〜8のハロゲンを置換基として有していてもよいアルキル基を有するエーテル類、及び炭素数7〜11の炭化水素類の中から選ばれる一種以上の化合物を含有するものであることを特徴とする、基板の処理方法。 - 前記上層膜は、液浸露光用の保護膜であることを特徴とする、請求項1に記載の基板の処理方法。
- スピン塗布法によりレジスト膜の表面に上層膜剤が塗布される前に、レジスト膜の表面に塗布される上層膜剤用のプリウェット溶剤であって、
炭素数1〜10の一価または二価のアルコール類、炭素数1〜8のハロゲンを置換基として有していてもよいアルキル基を有するエーテル類、及び炭素数7〜11の炭化水素類の中から選ばれる一種以上の化合物を含有していることを特徴とする、レジスト膜の表面に塗布される上層膜剤用のプリウェット溶剤。
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PCT/JP2008/052435 WO2008102689A1 (ja) | 2007-02-21 | 2008-02-14 | 基板の処理方法及びレジスト膜の表面に塗布される上層膜剤用のプリウェット溶剤 |
TW97105928A TWI392977B (zh) | 2007-02-21 | 2008-02-20 | 基板之處理方法及被塗佈於光阻膜表面之上層膜劑用之預濕溶劑 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010177504A (ja) * | 2009-01-30 | 2010-08-12 | Tokyo Electron Ltd | 塗布処理方法及び塗布処理装置 |
JP2011159997A (ja) * | 2011-04-21 | 2011-08-18 | Tokyo Electron Ltd | 基板の塗布処理方法 |
JP2014050803A (ja) * | 2012-09-07 | 2014-03-20 | Toshiba Corp | 回転塗布装置および回転塗布方法 |
JP2015088651A (ja) * | 2013-10-31 | 2015-05-07 | 東京応化工業株式会社 | プリウェット用組成物 |
JP2016096345A (ja) * | 2015-12-04 | 2016-05-26 | 株式会社東芝 | 回転塗布装置および回転塗布方法 |
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JPH10123693A (ja) * | 1996-10-15 | 1998-05-15 | Dainippon Printing Co Ltd | 感光性有機膜のパターン形成方法およびフオトマスクパターンの形成方法 |
JP2006186111A (ja) * | 2004-12-27 | 2006-07-13 | Toshiba Corp | レジストパターン形成方法及び半導体装置の製造方法 |
JP2006349865A (ja) * | 2005-06-14 | 2006-12-28 | Matsushita Electric Ind Co Ltd | バリア膜形成用材料及びそれを用いたパターン形成方法 |
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JPH04151603A (ja) * | 1990-10-15 | 1992-05-25 | Sanyo Chem Ind Ltd | カラーフィルター用表面保護材料 |
JP2003086491A (ja) * | 2001-09-12 | 2003-03-20 | Tokyo Electron Ltd | 基板処理方法および塗布膜形成方法 |
US7781142B2 (en) * | 2004-09-30 | 2010-08-24 | Jsr Corporation | Copolymer and top coating composition |
JP4485994B2 (ja) * | 2005-06-03 | 2010-06-23 | パナソニック株式会社 | パターン形成方法 |
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JPH10123693A (ja) * | 1996-10-15 | 1998-05-15 | Dainippon Printing Co Ltd | 感光性有機膜のパターン形成方法およびフオトマスクパターンの形成方法 |
JP2006186111A (ja) * | 2004-12-27 | 2006-07-13 | Toshiba Corp | レジストパターン形成方法及び半導体装置の製造方法 |
JP2006349865A (ja) * | 2005-06-14 | 2006-12-28 | Matsushita Electric Ind Co Ltd | バリア膜形成用材料及びそれを用いたパターン形成方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010177504A (ja) * | 2009-01-30 | 2010-08-12 | Tokyo Electron Ltd | 塗布処理方法及び塗布処理装置 |
JP2011159997A (ja) * | 2011-04-21 | 2011-08-18 | Tokyo Electron Ltd | 基板の塗布処理方法 |
JP2014050803A (ja) * | 2012-09-07 | 2014-03-20 | Toshiba Corp | 回転塗布装置および回転塗布方法 |
US9278373B2 (en) | 2012-09-07 | 2016-03-08 | Kabushiki Kaisha Toshiba | Spin coating apparatus and method |
US10549312B2 (en) | 2012-09-07 | 2020-02-04 | Toshiba Memory Corporation | Spin coating apparatus and method |
JP2015088651A (ja) * | 2013-10-31 | 2015-05-07 | 東京応化工業株式会社 | プリウェット用組成物 |
JP2016096345A (ja) * | 2015-12-04 | 2016-05-26 | 株式会社東芝 | 回転塗布装置および回転塗布方法 |
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JP4896765B2 (ja) | 2012-03-14 |
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