JP2008198848A - 処理方法および記憶媒体 - Google Patents
処理方法および記憶媒体 Download PDFInfo
- Publication number
- JP2008198848A JP2008198848A JP2007033632A JP2007033632A JP2008198848A JP 2008198848 A JP2008198848 A JP 2008198848A JP 2007033632 A JP2007033632 A JP 2007033632A JP 2007033632 A JP2007033632 A JP 2007033632A JP 2008198848 A JP2008198848 A JP 2008198848A
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- Prior art keywords
- pressure
- processing
- wafer
- silylation
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000003860 storage Methods 0.000 title claims description 13
- 238000012545 processing Methods 0.000 claims description 101
- 238000006884 silylation reaction Methods 0.000 claims description 83
- 238000003672 processing method Methods 0.000 claims description 18
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- LEIMLDGFXIOXMT-UHFFFAOYSA-N trimethylsilyl cyanide Chemical compound C[Si](C)(C)C#N LEIMLDGFXIOXMT-UHFFFAOYSA-N 0.000 claims description 8
- CWMFRHBXRUITQE-UHFFFAOYSA-N trimethylsilylacetylene Chemical compound C[Si](C)(C)C#C CWMFRHBXRUITQE-UHFFFAOYSA-N 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 claims description 4
- NIZHERJWXFHGGU-UHFFFAOYSA-N isocyanato(trimethyl)silane Chemical compound C[Si](C)(C)N=C=O NIZHERJWXFHGGU-UHFFFAOYSA-N 0.000 claims description 4
- DUZKCWBZZYODQJ-UHFFFAOYSA-N n-trimethylsilylmethanamine Chemical compound CN[Si](C)(C)C DUZKCWBZZYODQJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000008878 coupling Effects 0.000 abstract 3
- 238000010168 coupling process Methods 0.000 abstract 3
- 238000005859 coupling reaction Methods 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 88
- 238000005530 etching Methods 0.000 description 43
- 239000007789 gas Substances 0.000 description 40
- 238000004380 ashing Methods 0.000 description 33
- 238000012546 transfer Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 16
- 239000003795 chemical substances by application Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000011084 recovery Methods 0.000 description 14
- 239000010949 copper Substances 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000011068 loading method Methods 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 239000006200 vaporizer Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- KZFNONVXCZVHRD-UHFFFAOYSA-N dimethylamino(dimethyl)silicon Chemical compound CN(C)[Si](C)C KZFNONVXCZVHRD-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】被処理基板を処理室に搬入後、SiとCH3との結合を有するガスを処理室内に導入し、被処理基板に対してシリル化処理を施す処理方法であって、処理室内にSiとCH3との結合を有するガスを供給して処理室内の圧力を上昇させ、所定圧力に到達してから処理室内の圧力を搬出圧力まで低下させるまでの間、SiとCH3との結合を有するガスの供給による前記処理室内の圧力と供給時間を、所定のシリル化処理を施すことが可能な範囲とする。
【選択図】図6
Description
また、そのような処理方法を実行する制御プログラムが記憶されたコンピュータ読取可能な記憶媒体を提供することを目的とする。
104;エッチング・アッシング・シリル化処理システム
122;下部銅配線
123;ストッパ膜
124;含有Low−k膜
125a;反射防止膜
125b;レジスト膜
128:ビア
129;ダメージ部
153;シリル化処理ユニット
171;プロセスコントローラ
173;記憶部(記憶媒体)
W;ウエハ(基板)
Claims (6)
- 被処理基板を処理室に搬入後、SiとCH3との結合を有するガスを処理室内に供給し、被処理基板に対してシリル化処理を施す処理方法であって、
処理室内にSiとCH3との結合を有するガスを供給して処理室内の圧力を上昇させ、所定圧力に到達してから処理室内の圧力を搬出圧力まで低下させるまでの間、前記SiとCH3との結合を有するガスの供給による前記処理室内の圧力と供給時間を、所定のシリル化処理を施すことが可能な範囲とすることを特徴とする処理方法。 - 前記SiとCH3との結合を有するガスの供給による前記処理容器内の圧力が前記所定圧力に到達した後、その圧力で保持することなく、前記処理容器内の圧力を低下させることを特徴とする請求項1に記載の処理方法。
- 前記SiとCH3との結合を有するガスは、TMSDMA(Dimethylaminotrimethylsilane)、TMMAS(Trimethylmethylaminosilane)、TMICS(Trimethyl(isocyanato)silane)、TMSA(Trimethylsilylacetylene)、TMSC(Trimethylsilylcyanide)から選択された少なくとも1つであることを特徴とする請求項1または請求項2に記載の処理方法。
- 前記所定圧力は、1333Pa(10Torr)であることを特徴とする請求項1から請求項3のいずれか1項に記載の処理方法。
- 被処理基板の温度が100℃以上になるようにして前記シリル化処理を行うことを特徴とする請求項1から請求項4のいずれか1項に記載の処理方法。
- コンピュータ上で動作し、処理装置を制御するプログラムが記憶されたコンピュータ読取可能な記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項5のいずれかの処理方法が行われるように、コンピュータに前記処理装置を制御させることを特徴とする記憶媒体。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007033632A JP4800235B2 (ja) | 2007-02-14 | 2007-02-14 | 処理方法 |
US12/025,359 US7799703B2 (en) | 2007-02-14 | 2008-02-04 | Processing method and storage medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007033632A JP4800235B2 (ja) | 2007-02-14 | 2007-02-14 | 処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008198848A true JP2008198848A (ja) | 2008-08-28 |
JP4800235B2 JP4800235B2 (ja) | 2011-10-26 |
Family
ID=39686215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007033632A Expired - Fee Related JP4800235B2 (ja) | 2007-02-14 | 2007-02-14 | 処理方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7799703B2 (ja) |
JP (1) | JP4800235B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010278392A (ja) * | 2009-06-01 | 2010-12-09 | Tokyo Electron Ltd | 処理方法および記憶媒体 |
JP2011151141A (ja) * | 2010-01-20 | 2011-08-04 | Tokyo Electron Ltd | 基板処理方法及び記憶媒体 |
JP2013145925A (ja) * | 2013-04-26 | 2013-07-25 | Tokyo Electron Ltd | 処理装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG174296A1 (en) | 2009-03-10 | 2011-10-28 | Air Liquide | Cyclic amino compounds for low-k silylation |
US20110232677A1 (en) * | 2010-03-29 | 2011-09-29 | Tokyo Electron Limited | Method for cleaning low-k dielectrics |
CN102315156A (zh) * | 2010-07-08 | 2012-01-11 | 中芯国际集成电路制造(上海)有限公司 | 用于制造半导体器件的方法 |
US20130056874A1 (en) * | 2011-09-06 | 2013-03-07 | International Business Machines Corporation | Protection of intermetal dielectric layers in multilevel wiring structures |
WO2013128972A1 (ja) * | 2012-03-02 | 2013-09-06 | 日本電気株式会社 | 動作判定装置、動作判定システムおよび動作判定方法 |
US11335817B2 (en) | 2019-08-15 | 2022-05-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite etch stop layers for sensor devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006049798A (ja) * | 2004-07-02 | 2006-02-16 | Tokyo Electron Ltd | 溝配線または接続孔を有する半導体装置の製造方法 |
JP2006086411A (ja) * | 2004-09-17 | 2006-03-30 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5925494A (en) * | 1996-02-16 | 1999-07-20 | Massachusetts Institute Of Technology | Vapor deposition of polymer films for photolithography |
US6709523B1 (en) * | 1999-11-18 | 2004-03-23 | Tokyo Electron Limited | Silylation treatment unit and method |
US6787455B2 (en) * | 2001-12-21 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd | Bi-layer photoresist method for forming high resolution semiconductor features |
-
2007
- 2007-02-14 JP JP2007033632A patent/JP4800235B2/ja not_active Expired - Fee Related
-
2008
- 2008-02-04 US US12/025,359 patent/US7799703B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006049798A (ja) * | 2004-07-02 | 2006-02-16 | Tokyo Electron Ltd | 溝配線または接続孔を有する半導体装置の製造方法 |
JP2006086411A (ja) * | 2004-09-17 | 2006-03-30 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010278392A (ja) * | 2009-06-01 | 2010-12-09 | Tokyo Electron Ltd | 処理方法および記憶媒体 |
JP2011151141A (ja) * | 2010-01-20 | 2011-08-04 | Tokyo Electron Ltd | 基板処理方法及び記憶媒体 |
JP2013145925A (ja) * | 2013-04-26 | 2013-07-25 | Tokyo Electron Ltd | 処理装置 |
Also Published As
Publication number | Publication date |
---|---|
US20080194115A1 (en) | 2008-08-14 |
US7799703B2 (en) | 2010-09-21 |
JP4800235B2 (ja) | 2011-10-26 |
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