JP2008192701A - GaN系半導体素子 - Google Patents
GaN系半導体素子 Download PDFInfo
- Publication number
- JP2008192701A JP2008192701A JP2007023403A JP2007023403A JP2008192701A JP 2008192701 A JP2008192701 A JP 2008192701A JP 2007023403 A JP2007023403 A JP 2007023403A JP 2007023403 A JP2007023403 A JP 2007023403A JP 2008192701 A JP2008192701 A JP 2008192701A
- Authority
- JP
- Japan
- Prior art keywords
- gan
- based semiconductor
- type
- layer
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 222
- 239000012535 impurity Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 28
- 239000010410 layer Substances 0.000 description 250
- 239000010408 film Substances 0.000 description 32
- 230000005669 field effect Effects 0.000 description 19
- 229910002704 AlGaN Inorganic materials 0.000 description 15
- 229910052594 sapphire Inorganic materials 0.000 description 15
- 239000010980 sapphire Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 229910001020 Au alloy Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 229910004349 Ti-Al Inorganic materials 0.000 description 2
- 229910004692 Ti—Al Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910018885 Pt—Au Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】基板1の上に第3n型GaN系半導体層3、第1n型GaN系半導体層4、i型GaN系半導体層5、p型GaN系半導体層6、第2n型GaN系半導体層7が積層された積層構造で表される。p型GaN系半導体層6の不純物濃度は、1×1020 cm−3以下であり、第1n型GaN系半導体層4の不純物濃度は1×1018cm−3以下に構成される。
【選択図】 図1
Description
Vmax=ε1×(Emax)2/(2×q×N1)
ここで、Emaxは素子の絶縁破壊電界を、ε1は第1n型GaN系半導体層4の誘電率を、qは電気素量を表す。例えば、第1n型GaN系半導体層4の不純物濃度N1を1×1018cm−3、絶縁破壊電界Emaxを3.5M(V/cm)とすると、耐圧は321Vとなる。この程度の耐圧を維持するためには、第1n型GaN系半導体層4の不純物濃度は1×1018cm−3以下としなければならない。ここで、Mはmegaを表す。以上のように、第1n型GaN系半導体層4は、不純物濃度を低くしたn−型GaN系半導体層で構成される。
φS(inv)≒2k×T×ln(N2/ni)/q で表される。
界面準位のない理想的な状態で反転分布を発生させる電圧の閾値Vthは、以下のように表される。MIS構造の絶縁膜の静電容量をC1、誘電率をε1、p型GaN系半導体層6の静電容量をC2、誘電率をε2とすると、
Vth=q×φS(inv)×(C1+C2)/C1
=(1+(ε2×Wp)/(ε1×Wmax)×q×φs(inv)
ここで、Wmaxは反転時の最大空乏層幅であり、
Wmax={(2εp×φs(inv))/(q×N2)}1/2で表される。
MIS構造の絶縁膜に、厚さ0.1μmのSiO2を用い、上述したようにp型GaN系半導体層6の厚さWpを0.5μmとした場合、界面準位のない理想的な状態で反転分布を発生させる電圧の閾値Vthを100ボルト以下に抑えたい場合には、上記計算式より、p型GaN系半導体層6の不純物濃度N2を5×1019cm−3以下にすることが望ましい。
R=t2/(q×N3×μ×S)で表される。抵抗を低くするためには、不純物濃度N3を1×1018cm−3とし、膜厚t2は0.5μmとした。これによって、抵抗(率)は、2.2×10−6(Ω・cm2)程度になる。したがって、第2n型GaN系半導体層7の不純物濃度は、1×1018cm−3以上とすることが望ましい。さらに、抵抗Rの式より、膜厚t2が薄い方が抵抗は小さくなるので、膜厚t2は1μm以下程度とすることが望ましい。
3 第3n型GaN系半導体層
4 第1n型GaN系半導体層
5 i型GaN系半導体層
6 p型GaN系半導体層
7 第2n型GaN系半導体層7
Claims (11)
- 基板上に少なくとも第1のn型又はi型のGaN系半導体層、p型不純物を含むGaN系半導体層、第2のn型又はi型のGaN系半導体層を順に備えたGaN系半導体素子であって、
前記p型不純物を含むp型GaN系半導体層の不純物濃度は1×1020cm−3以下であり、前記第1のn型又はi型のGaN系半導体層の不純物濃度は1×1018cm−3以下であることを特徴とするGaN系半導体素子。 - 前記第1のn型又はi型のGaN系半導体層とp型不純物を含むGaN系半導体層との間には、不純物Mg濃度が1×1018cm−3以下のi型GaN系半導体層が形成されていることを特徴とする請求項1記載のGaN系半導体素子。
- 前記基板と第1のn型又はi型のGaN系半導体層との間に第1のn型又はi型のGaN系半導体層よりも不純物濃度が高い第3のn型GaN系半導体層が形成されていることを特徴とする請求項1又は請求項2のいずれか1項に記載のGaN系半導体素子。
- 前記p型不純物を含むGaN系半導体層の厚みは2μm以下であることを特徴とする請求項1〜請求項3のいずれか1項に記載のGaN系半導体素子。
- 前記p型不純物を含むGaN系半導体層の不純物はMgであることを特徴とする請求項1〜請求項4のいずれか1項に記載のGaN系半導体素子。
- 前記第1のn型又はi型のGaN系半導体層の不純物はSi又はOであることを特徴とする請求項1〜請求項5のいずれか1項に記載のGaN系半導体素子。
- 前記第1のn型又はi型のGaN系半導体層の不純物濃度は、前記第2のn型又はi型のGaN系半導体層より小さいことを特徴とする請求項1〜請求項6のいずれか1項に記載のGaN系半導体素子。
- 前記第2のn型又はi型のGaN系半導体層の厚みは1μm以下であることを特徴とする請求項1〜請求項7のいずれか1項に記載のGaN系半導体素子。
- 前記第3のn型GaN系半導体層の不純物濃度は、1×1018cm−3以上であることを特徴とする請求項3〜請求項8のいずれか1項に記載のGaN系半導体素子。
- 前記p型不純物を含むGaN系半導体層の加工により露出した壁面に接してゲート絶縁膜を形成することを特徴とする請求項1〜請求項9のいずれか1項に記載のGaN系半導体素子。
- 前記壁面付近の領域は、前記p型不純物を含むGaN系半導体層とは伝導特性の異なる半導体により構成されていることを特徴とする請求項10記載のGaN系半導体素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007023403A JP5189771B2 (ja) | 2007-02-01 | 2007-02-01 | GaN系半導体素子 |
PCT/JP2008/051626 WO2008093824A1 (ja) | 2007-02-01 | 2008-02-01 | GaN系半導体素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007023403A JP5189771B2 (ja) | 2007-02-01 | 2007-02-01 | GaN系半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008192701A true JP2008192701A (ja) | 2008-08-21 |
JP5189771B2 JP5189771B2 (ja) | 2013-04-24 |
Family
ID=39674127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007023403A Active JP5189771B2 (ja) | 2007-02-01 | 2007-02-01 | GaN系半導体素子 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5189771B2 (ja) |
WO (1) | WO2008093824A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008227356A (ja) * | 2007-03-15 | 2008-09-25 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
JP2008311489A (ja) * | 2007-06-15 | 2008-12-25 | Rohm Co Ltd | 窒化物半導体素子および窒化物半導体素子の製造方法 |
WO2011114535A1 (ja) | 2010-03-19 | 2011-09-22 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
CN102969354A (zh) * | 2011-09-01 | 2013-03-13 | 富士通株式会社 | 半导体器件 |
DE112011103470T5 (de) | 2010-10-13 | 2013-08-01 | Sumitomo Electric Industries, Ltd. | Halbleiterbauelement und Verfahren zum Herstellen desselben |
DE112011103385T5 (de) | 2010-10-06 | 2013-08-14 | Sumitomo Electric Industries, Ltd. | Halbleitervorrichtung und Verfahren zur Herstellung derselben |
JP2015032835A (ja) * | 2013-08-05 | 2015-02-16 | ソウル セミコンダクター カンパニー リミテッド | 窒化物系電界効果トランジスタ及びその製造方法 |
US9312373B2 (en) | 2010-07-14 | 2016-04-12 | Fujitsu Limited | Compound semiconductor device and manufacturing method of the same |
JP2018129558A (ja) * | 2018-05-24 | 2018-08-16 | ローム株式会社 | 半導体装置 |
EP3591709A1 (fr) * | 2018-07-03 | 2020-01-08 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Transistor a heterojonction de type normalement ouvert a resistance de passage reduite |
JP2021009886A (ja) * | 2019-06-28 | 2021-01-28 | 株式会社東芝 | 半導体装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6136571B2 (ja) | 2013-05-24 | 2017-05-31 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6241100B2 (ja) * | 2013-07-17 | 2017-12-06 | 豊田合成株式会社 | Mosfet |
EP3686924A1 (en) * | 2019-01-24 | 2020-07-29 | IMEC vzw | Group iii-nitride based vertical power device and system |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5552272A (en) * | 1978-10-13 | 1980-04-16 | Seiko Epson Corp | High withstanding voltage dsa mos transistor |
JP2001230410A (ja) * | 2000-02-18 | 2001-08-24 | Furukawa Electric Co Ltd:The | GaN系電界効果トランジスタとその製造方法 |
JP2001342100A (ja) * | 2000-03-29 | 2001-12-11 | Toshiba Corp | エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法 |
JP2002016262A (ja) * | 2000-04-25 | 2002-01-18 | Furukawa Electric Co Ltd:The | 縦型電界効果トランジスタ |
JP2002151735A (ja) * | 2000-11-06 | 2002-05-24 | Lumileds Lighting Us Llc | ウェハボンディングへテロ構造を含む発光半導体デバイス |
JP2006286954A (ja) * | 2005-03-31 | 2006-10-19 | Eudyna Devices Inc | 半導体装置及びその製造方法 |
JP2006313859A (ja) * | 2005-05-09 | 2006-11-16 | Sumitomo Electric Ind Ltd | 縦型トランジスタ |
WO2006134810A1 (ja) * | 2005-06-14 | 2006-12-21 | Rohm Co., Ltd. | 半導体デバイス |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52115663A (en) * | 1976-03-25 | 1977-09-28 | Toshiba Corp | Semiconductor device |
JPS61104671A (ja) * | 1984-10-29 | 1986-05-22 | Sharp Corp | 電界効果トランジスタ |
-
2007
- 2007-02-01 JP JP2007023403A patent/JP5189771B2/ja active Active
-
2008
- 2008-02-01 WO PCT/JP2008/051626 patent/WO2008093824A1/ja active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5552272A (en) * | 1978-10-13 | 1980-04-16 | Seiko Epson Corp | High withstanding voltage dsa mos transistor |
JP2001230410A (ja) * | 2000-02-18 | 2001-08-24 | Furukawa Electric Co Ltd:The | GaN系電界効果トランジスタとその製造方法 |
JP2001342100A (ja) * | 2000-03-29 | 2001-12-11 | Toshiba Corp | エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法 |
JP2002016262A (ja) * | 2000-04-25 | 2002-01-18 | Furukawa Electric Co Ltd:The | 縦型電界効果トランジスタ |
JP2002151735A (ja) * | 2000-11-06 | 2002-05-24 | Lumileds Lighting Us Llc | ウェハボンディングへテロ構造を含む発光半導体デバイス |
JP2006286954A (ja) * | 2005-03-31 | 2006-10-19 | Eudyna Devices Inc | 半導体装置及びその製造方法 |
JP2006313859A (ja) * | 2005-05-09 | 2006-11-16 | Sumitomo Electric Ind Ltd | 縦型トランジスタ |
WO2006134810A1 (ja) * | 2005-06-14 | 2006-12-21 | Rohm Co., Ltd. | 半導体デバイス |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008227356A (ja) * | 2007-03-15 | 2008-09-25 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
JP2008311489A (ja) * | 2007-06-15 | 2008-12-25 | Rohm Co Ltd | 窒化物半導体素子および窒化物半導体素子の製造方法 |
US9166030B2 (en) | 2010-03-19 | 2015-10-20 | Fujitsu Limited | Compound semiconductor device and method for fabricating |
WO2011114535A1 (ja) | 2010-03-19 | 2011-09-22 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US9337326B2 (en) | 2010-03-19 | 2016-05-10 | Fujitsu Limited | Compound semiconductor device and method for fabricating the same |
US9515063B2 (en) | 2010-07-14 | 2016-12-06 | Fujitsu Limited | Compound semiconductor device and manufacturing method of the same |
US9312373B2 (en) | 2010-07-14 | 2016-04-12 | Fujitsu Limited | Compound semiconductor device and manufacturing method of the same |
DE112011103385T5 (de) | 2010-10-06 | 2013-08-14 | Sumitomo Electric Industries, Ltd. | Halbleitervorrichtung und Verfahren zur Herstellung derselben |
US8816398B2 (en) | 2010-10-06 | 2014-08-26 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for producing the same |
DE112011103470T5 (de) | 2010-10-13 | 2013-08-01 | Sumitomo Electric Industries, Ltd. | Halbleiterbauelement und Verfahren zum Herstellen desselben |
US8969920B2 (en) | 2010-10-13 | 2015-03-03 | Sumitomo Electric Industries, Ltd. | Vertical GaN-based semiconductor device |
US8586994B2 (en) | 2011-09-01 | 2013-11-19 | Fujitsu Limited | Semiconductor device |
CN102969354A (zh) * | 2011-09-01 | 2013-03-13 | 富士通株式会社 | 半导体器件 |
JP2015032835A (ja) * | 2013-08-05 | 2015-02-16 | ソウル セミコンダクター カンパニー リミテッド | 窒化物系電界効果トランジスタ及びその製造方法 |
JP2018129558A (ja) * | 2018-05-24 | 2018-08-16 | ローム株式会社 | 半導体装置 |
EP3591709A1 (fr) * | 2018-07-03 | 2020-01-08 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Transistor a heterojonction de type normalement ouvert a resistance de passage reduite |
FR3083647A1 (fr) * | 2018-07-03 | 2020-01-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Transistor a heterojonction de type normalement ouvert a resistance de passage reduite |
US11189716B2 (en) | 2018-07-03 | 2021-11-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Open type heterojunction transistor having a reduced transition resistance |
JP2021009886A (ja) * | 2019-06-28 | 2021-01-28 | 株式会社東芝 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2008093824A1 (ja) | 2008-08-07 |
JP5189771B2 (ja) | 2013-04-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5189771B2 (ja) | GaN系半導体素子 | |
US10529841B2 (en) | Field effect transistor | |
JP6251071B2 (ja) | 半導体装置 | |
US7999286B2 (en) | MIS field effect transistor and method for manufacturing the same | |
US8039872B2 (en) | Nitride semiconductor device including a group III nitride semiconductor structure | |
US8519439B2 (en) | Nitride semiconductor element with N-face semiconductor crystal layer | |
US20130240951A1 (en) | Gallium nitride superjunction devices | |
JP4993673B2 (ja) | Mis型電界効果トランジスタおよびその製造方法 | |
US20090321854A1 (en) | Mis field effect transistor and method for manufacturing the same | |
WO2011043110A1 (ja) | 半導体装置およびその製造方法 | |
JP2008053449A (ja) | 半導体装置およびその製造方法 | |
JP5534661B2 (ja) | 半導体装置 | |
JP5494474B2 (ja) | 半導体装置及びその製造方法 | |
US20150021552A1 (en) | Iii-nitride transistor including a p-type depleting layer | |
JP2009200096A (ja) | 窒化物半導体装置とそれを含む電力変換装置 | |
JP2005244072A (ja) | 半導体装置 | |
JP5003813B2 (ja) | 半導体装置およびその製造方法 | |
JP2008205414A (ja) | 窒化物半導体素子、窒化物半導体パッケージおよび窒化物半導体素子の製造方法 | |
JP2010103425A (ja) | 窒化物半導体装置 | |
JP2008210936A (ja) | 窒化物半導体素子および窒化物半導体素子の製造方法 | |
JP2011165777A (ja) | 窒化ガリウム半導体装置及びその製造方法 | |
JP2013115362A (ja) | 窒化物半導体ダイオード | |
JP2008016588A (ja) | GaN系半導体素子 | |
JP2011009493A (ja) | 半導体装置およびその製造方法 | |
US8659055B2 (en) | Semiconductor device, field-effect transistor, and electronic device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091211 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120612 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120813 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120904 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121105 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130125 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160201 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5189771 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |