JP2008047914A - 低アスペクト比のウエハ貫通ホールを使用したウエハレベルのパッケージング方法 - Google Patents
低アスペクト比のウエハ貫通ホールを使用したウエハレベルのパッケージング方法 Download PDFInfo
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- JP2008047914A JP2008047914A JP2007211332A JP2007211332A JP2008047914A JP 2008047914 A JP2008047914 A JP 2008047914A JP 2007211332 A JP2007211332 A JP 2007211332A JP 2007211332 A JP2007211332 A JP 2007211332A JP 2008047914 A JP2008047914 A JP 2008047914A
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Abstract
【解決手段】ウエハレベルパッケージ化ICは、キャップウエハ35をICベースウエハ70の前部に取り付けた後に、ICベースウエハ70を切断することによって、ICベースウエハ70上の複数のダイをシンギュレートすることによって作成される。キャップウエハ35は、ICベースウエハ70に対し機械的に取り付けられて電気的に接続され、それからダイはシンギュレートされる。導電性経路は、キャップウエハ35を通して、キャップの前面33上の電気的接触点48とICベースウエハ上の電気的接触点74との間を延びている。
【選択図】図2
Description
この出願は、2005年3月24日に出願された米国特許出願第11/088,633号の一部継続出願である。この出願は、同特許出願の利益を主張し、ここにその開示を参照によって完全に組み入れる。
適用なし
31:SiO層
32:SiN層
33:前面
34:裏面
35:キャップウエハ
36:バイア(電気的相互接続体)
38:バンプ下地金属(UBM)
39:金属/半田混合物
40:フォトレジスト
48:電気的接触パッド
50:キャビティ
51:低アスペクト比(傾斜)側壁
53:垂直側壁
54:底面
58:シールリング
59:電気的絶縁領域
60:フォトレジスト
70:ICベースウエハ
72:ダイ
74:電気的接触点
75:集積回路
77:シールリング
Claims (27)
- 集積回路用ウエハレベルパッケージの製造方法であって、このウエハレベルパッケージは、ウエハ貫通式電気的相互接続体を持つキャップウエハに対し固定的に取り付けられると共にそれと動作可能に関連付けられたベースウエハを備えるもので、この方法は、
研磨済半導体基板の前面及び裏面双方に、低アスペクト比の側壁を有したキャビティを与える工程と、
裏面に配設されたキャビティを使用して、隣接する前面キャビティ間に相互接続バイアを与える工程と、
高導電性金属/半田を相互接続バイアの表面に塗布して、ウエハ貫通式低アスペクト比側壁型電気的相互接続体を与える工程と、
キャップウエハをベースウエハに対し固定的に取り付けて複合ウエハを形成する工程とを備え、
ベースウエハの前面に配設された複数の電気的接触点は、キャップウエハの前面のウエハ貫通式低アスペクト比側壁型電気的相互接続体に電気的に結合され、またキャップウエハ上のウエハ貫通式低アスペクト比側壁型電気的相互接続体は、キャップウエハの裏面に配設された複数の電気的接触点に電気的に結合されていることを特徴とする方法。 - 低アスペクト比の側壁を有したキャビティを与える工程は、垂直1:水平1よりも急ではない側壁勾配を与える工程を含む請求項1に記載の方法。
- この方法は更に、キャップウエハをICベースウエハに固定的に取り付けて電気的に結合する前に、キャップウエハをアニールする工程を備える請求項1に記載の方法。
- この方法は更に、キャップウエハをICベースウエハに固定的に取り付けて電気的に結合した後に、プリカットされた相互接続バイアに保護エポキシ樹脂を充填する工程を備える請求項1に記載の方法。
- この方法は更に、キャップウエハをベースウエハに固定的に取り付けた後に、複合ウエハをシンギュレートして複数の複合ウエハダイを与える工程を備える請求項1に記載の方法。
- 高導電性金属/半田は、電気メッキ、気相成長又はスパッタリングを使用して相互接続バイアに塗布される請求項1に記載の方法。
- 塗布される高導電性金属/半田は、金、プラチナ又は銀からなる群の金属を含み、そして半田は、スズ半田を含む請求項1に記載の方法。
- ウエハ貫通式側壁型電気的相互接続体は、低アスペクト比の側壁部分と、高さの低い垂直又は実質的に垂直な側壁部分とを組み合わせて有し、シンギュレーションの前に、相互接続バイアにY構成を与える請求項7に記載の方法。
- ウエハ貫通式側壁型電気的相互接続体の低アスペクト比の側壁部分は、第1の端部でキャップウエハの裏面と直接連通し、且つ第2の端部で垂直又は実質的に垂直な側壁部分と直接連通している請求項8に記載の方法。
- ウエハ貫通ホール式側壁型電気的相互接続体の垂直又は実質的に垂直な側壁部分は、第1の端部でキャップウエハの前面と直接連通し、且つ第2の端部で低アスペクト比の側壁部分と直接連通している請求項8に記載の方法。
- 集積回路(IC)ダイをウエハレベルパッケージングする方法であって、
複数のダイ及び各ダイに関連した少なくとも1つの電気的接触点を備えたICベースウエハを与える工程と、
第1半導体キャップウエハを与える工程と、
低アスペクト比部分を有する導電性側壁経路を、第1半導体キャップウエハを通して、ICベースウエハ上の電気的接触点のそれぞれに対応した位置に形成して、各導電性側壁経路が第1半導体キャップウエハの第1側部から第1の半導体キャップウエハの第2側部へ延びると共に、第1半導体キャップウエハの少なくとも一部分から絶縁されるようにする工程と、
ICベースウエハからダイをシンギュレートする前に、第1半導体キャップウエハをICベースウエハに取り付けて複合ウエハを形成し、第1半導体キャップウエハの第1側部上の導電性経路の端部がICベースウエハ上のそれぞれの電気的接触点に電気的に結合されるようにする工程と
を備えることを特徴とする。 - 低アスペクト比の側壁部分は、水平1:垂直1よりも急ではない側壁勾配を有するように形成される請求項11に記載の方法。
- この方法は更に、前記第1半導体キャップウエハをICベースウエハに固定的に取り付けて電気的に結合する前に、第1半導体キャップウエハをアニールする工程を備える請求項11に記載の方法。
- この方法は更に、第1半導体キャップウエハをICベースウエハに固定的に取り付けて電気的に結合した後に、側壁経路の開口部に保護エポキシ樹脂を充填する工程と、キャップウエハをプリカットする工程と
を備える請求項11に記載の方法。 - この方法は更に、第1半導体キャップウエハをベースウエハに取り付けた後に、複合ウエハをシンギュレートして、複数の複合ウエハダイを与える請求項11に記載の方法。
- 導電性側壁経路は、電気メッキ、気相成長又はスパッタリングを使用して塗布される高導電性金属/半田を使用して形成される請求項11に記載の方法。
- 導電性側壁経路は、金、プラチナ又は銀からなる群の金属を含んで塗布される高導電性金属/半田を使用して形成され、そして半田は、スズ半田を含む請求項11に記載の方法。
- 導電性側壁経路は、低アスペクト比の側壁部分と、垂直又は実質的に垂直な側壁部分とを組み合わせて有し、シンギュレーションの前に、Y構成を与える請求項1に記載の方法。
- 導電性側壁経路の低アスペクト比の側壁部分は、第1の端部で第1半導体キャップウエハの裏面と直接連通し、且つ第2の端部で垂直又は実質的に垂直な側壁部分と直接連通している請求項18に記載の方法。
- 集積回路用ウエハレベルパッケージであって、少なくとも1つの集積回路がその上に配設されるベースウエハを備え、このベースウエハは、キャップウエハに対し固定的に取り付けられると共にそれと動作可能に関連付けられ、キャップウエハは、キャビティ部分と、請求項1に従って製造されたウエハ貫通式低アスペクト比側壁型電気的相互接続体とを持つことを特徴とするウエハレベルパッケージ。
- 少なくとも1つの集積回路は、発光ダイオード、光センサ、マイクロプロセッサ、メモリ、増幅器、フィルタ、送信機、マイクロ機械加工構造体、マイクロ電気機械的(MEMS)構造体、加速度計からなる群から選択される請求項20に記載のウエハレベルパッケージ。
- 少なくとも1つの集積回路は、密閉封止型キャビティ内に配設される請求項20に記載のウエハレベルパッケージ。
- 密閉封止型キャビティは、1気圧よりも高いか、等しいか、低い圧力のガスで充填されている請求項20に記載のウエハレベルパッケージ。
- 集積回路用ウエハレベルパッケージであって、少なくとも1つの集積回路がその上に配設されるベースウエハを備え、このベースウエハは、キャップウエハに対し固定的に取り付けられると共にそれと動作可能に関連付けられ、キャップウエハは、キャビティ部分と、請求項11に従って製造されたウエハ貫通式低アスペクト比側壁型電気的相互接続体とを持つことを特徴とするウエハレベルパッケージ。
- 少なくとも1つの集積回路は、発光ダイオード、光センサ、マイクロプロセッサ、メモリ、増幅器、フィルタ、送信機、マイクロ機械加工構造体、マイクロ電気機械的(MEMS)構造体、加速度計からなる群から選択される請求項24に記載のウエハレベルパッケージ。
- キャビティ部分は密閉封止され、そして少なくとも1つの集積回路は、前記キャビティ内に配設される請求項24に記載のウエハレベルパッケージ。
- 密閉封止型キャビティは、1気圧よりも高いか、等しいか、低い圧力のガスで充填される請求項24に記載のウエハレベルパッケージ。
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