JP2008042104A - 電子装置及びその製造方法 - Google Patents
電子装置及びその製造方法 Download PDFInfo
- Publication number
- JP2008042104A JP2008042104A JP2006217640A JP2006217640A JP2008042104A JP 2008042104 A JP2008042104 A JP 2008042104A JP 2006217640 A JP2006217640 A JP 2006217640A JP 2006217640 A JP2006217640 A JP 2006217640A JP 2008042104 A JP2008042104 A JP 2008042104A
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- Prior art keywords
- bump electrode
- electronic device
- electrode
- protective layer
- bump
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- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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Abstract
【解決手段】低融点の金属単体によって形成され、第1の部品10と第2の部品20とを接合するバンプ電極30と、バンプ電極30の少なくとも側面に形成され、バンプ電極の特性を劣化させる物質の透過を防止する保護層40とを有する。保護層40は、バンプ電極30が露出しないように、バンプ電極30の側面、パッド電極15の一部に形成されている。バンプ電極30はIn金属単体で形成され、保護層40は、高融点の金属、例えば、貴金属で形成されている。第1の部品10と第2の部品20との間隙にはアンダーフィル材35が充填されている。
【選択図】図1
Description
柔軟性に優れ耐応力性に優れた接合部をもった電子製品とすることができる。
30…Inバンプ電極、35…アンダーフィル材、40…金メッキ層、50…半導体装置
Claims (14)
- 低融点の金属単体によって形成され、第1の部品と第2の部品とを電気的に接合する バンプ電極と、
前記バンプ電極の少なくとも側面に形成され、前記バンプ電極の特性を劣化させる物 質の透過を防止する保護層と
を有する電子装置。 - 前記第1及び第2の部品のそれぞれに形成されたパッド電極間が、前記バンプ電極によって電気的に接続され、前記保護層は前記バンプ電極が外部に露出しないように形成された、請求項1に記載の電子装置。
- 前記保護層が前記バンプ電極の側面に形成された、請求項2に記載の電子装置。
- 前記パッド電極の一部が前記保護層によって被覆されている、請求項2に記載の電子装置。
- 前記バンプ電極がインジウム金属単体によって形成された、請求項1に記載の電子装置。
- 前記保護層が高融点の金属によって形成された、請求項1に記載の電子装置。
- 前記第1の部品と前記第2の部品との間隙にアンダーフィル材が充填された、請求項1に記載の電子装置。
- 前記第1の部品が第1の半導体チップであり、前記第2の部品が第2の半導体チップ又は実装基板である、請求項1に記載の電子装置。
- 前記実装基板がインターポーザ基板又はマザーボード基板である、請求項8に記載の電子装置。
- 半導体装置を構成している、請求項1に記載の電子装置。
- 低融点の金属単体によって形成されたバンプ電極によって、第1の部品と第2の部品 とを電気的に接合する第1の工程と、
前記バンプ電極の特性を劣化させる物質の透過を防止する保護層を、前記バンプ電極 の少なくとも側面に形成する第2の工程と
を有する、電子装置の製造方法。 - 前記第1の部品と前記第2の部品との間隙にアンダーフィル材を充填する第3の工程を有する、請求項11に記載の電子装置の製造方法。
- 前記第2の工程において、前記保護層として高融点の金属のメッキ層を形成する、請求項11に記載の電子装置の製造方法。
- 前記メッキ層を無電解メッキによって形成する、請求項13に記載の電子装置の製造方法。
Priority Applications (3)
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JP2006217640A JP4182996B2 (ja) | 2006-08-10 | 2006-08-10 | 電子装置及びその製造方法 |
US11/890,671 US20080054458A1 (en) | 2006-08-10 | 2007-08-07 | Electronic device and method of manufacturing the same |
CNB2007101411082A CN100541773C (zh) | 2006-08-10 | 2007-08-08 | 电子装置及其制造方法 |
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JP2006217640A JP4182996B2 (ja) | 2006-08-10 | 2006-08-10 | 電子装置及びその製造方法 |
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JP4182996B2 JP4182996B2 (ja) | 2008-11-19 |
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JP (1) | JP4182996B2 (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2015053356A1 (ja) * | 2013-10-09 | 2017-03-09 | 学校法人早稲田大学 | 電極接続方法及び電極接続構造 |
JP2017139461A (ja) * | 2016-02-04 | 2017-08-10 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 湿気に対して保護されたハイブリッド電子デバイス及び湿気に対してハイブリッド電子デバイスを保護する方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2949903A1 (fr) * | 2009-09-07 | 2011-03-11 | Soc Fr Detecteurs Infrarouges Sofradir | Procede d'hybridation de composants electroniques, notamment de detection |
US9024205B2 (en) | 2012-12-03 | 2015-05-05 | Invensas Corporation | Advanced device assembly structures and methods |
US9398700B2 (en) | 2013-06-21 | 2016-07-19 | Invensas Corporation | Method of forming a reliable microelectronic assembly |
US20170309549A1 (en) * | 2016-04-21 | 2017-10-26 | Texas Instruments Incorporated | Sintered Metal Flip Chip Joints |
CN110299338B (zh) * | 2019-06-11 | 2020-09-11 | 苏斯贸易(上海)有限公司 | 一种内柱外环式双区复合焊点结构和混合键合方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4865245A (en) * | 1987-09-24 | 1989-09-12 | Santa Barbara Research Center | Oxide removal from metallic contact bumps formed on semiconductor devices to improve hybridization cold-welds |
US5523628A (en) * | 1994-08-05 | 1996-06-04 | Hughes Aircraft Company | Apparatus and method for protecting metal bumped integrated circuit chips during processing and for providing mechanical support to interconnected chips |
KR0157899B1 (ko) * | 1995-09-22 | 1998-12-01 | 문정환 | 기판에 반도체 장치를 부착시키기 위한 연결구조 |
US5925930A (en) * | 1996-05-21 | 1999-07-20 | Micron Technology, Inc. | IC contacts with palladium layer and flexible conductive epoxy bumps |
US6506672B1 (en) * | 1999-06-30 | 2003-01-14 | University Of Maryland, College Park | Re-metallized aluminum bond pad, and method for making the same |
JP3414388B2 (ja) * | 2000-06-12 | 2003-06-09 | 株式会社日立製作所 | 電子機器 |
US6506681B2 (en) * | 2000-12-06 | 2003-01-14 | Micron Technology, Inc. | Thin flip—chip method |
-
2006
- 2006-08-10 JP JP2006217640A patent/JP4182996B2/ja not_active Expired - Fee Related
-
2007
- 2007-08-07 US US11/890,671 patent/US20080054458A1/en not_active Abandoned
- 2007-08-08 CN CNB2007101411082A patent/CN100541773C/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2015053356A1 (ja) * | 2013-10-09 | 2017-03-09 | 学校法人早稲田大学 | 電極接続方法及び電極接続構造 |
JP2019106550A (ja) * | 2013-10-09 | 2019-06-27 | 学校法人早稲田大学 | 電極接続方法及び電極接続構造 |
JP2017139461A (ja) * | 2016-02-04 | 2017-08-10 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 湿気に対して保護されたハイブリッド電子デバイス及び湿気に対してハイブリッド電子デバイスを保護する方法 |
KR20170093069A (ko) * | 2016-02-04 | 2017-08-14 | 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 | 습기로부터 보호되는 하이브리드 전자 장치 및 습기로부터 하이브리드 전자 장치를 보호하는 방법 |
JP7160518B2 (ja) | 2016-02-04 | 2022-10-25 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 湿気に対して保護されたハイブリッド電子デバイス及び湿気に対してハイブリッド電子デバイスを保護する方法 |
KR102608794B1 (ko) * | 2016-02-04 | 2023-12-01 | 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 | 습기로부터 보호되는 하이브리드 전자 장치 및 습기로부터 하이브리드 전자 장치를 보호하는 방법 |
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JP4182996B2 (ja) | 2008-11-19 |
US20080054458A1 (en) | 2008-03-06 |
CN100541773C (zh) | 2009-09-16 |
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