JP2008034808A - 磁壁の移動を利用した半導体装置 - Google Patents
磁壁の移動を利用した半導体装置 Download PDFInfo
- Publication number
- JP2008034808A JP2008034808A JP2007150690A JP2007150690A JP2008034808A JP 2008034808 A JP2008034808 A JP 2008034808A JP 2007150690 A JP2007150690 A JP 2007150690A JP 2007150690 A JP2007150690 A JP 2007150690A JP 2008034808 A JP2008034808 A JP 2008034808A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- domain wall
- semiconductor device
- magnetic field
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 116
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 230000005381 magnetic domain Effects 0.000 claims abstract description 22
- 238000013016 damping Methods 0.000 claims description 16
- 229910020598 Co Fe Inorganic materials 0.000 claims description 3
- 229910020630 Co Ni Inorganic materials 0.000 claims description 3
- 229910002519 Co-Fe Inorganic materials 0.000 claims description 3
- 229910002440 Co–Ni Inorganic materials 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 3
- 230000005415 magnetization Effects 0.000 description 10
- 230000015654 memory Effects 0.000 description 10
- 239000000696 magnetic material Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/933—Spintronics or quantum computing
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
【解決手段】複数の磁区を有する磁性ワイヤーを備える半導体装置において、磁性ワイヤーは、パルス磁場及びパルス電流のうち何れか一つにより移動する磁壁を備えてノッチフリーであることを特徴とする半導体装置である。これにより、該半導体装置の磁性ワイヤーは、パルス磁場またはパルス電流の強度及び幅によって移動距離が制御される磁壁を備えるので、磁壁の移動の制御のための別途のノッチが不要である。
【選択図】図6
Description
35 磁壁
300 磁性ワイヤー
Claims (11)
- 複数の磁区を有する磁性ワイヤーを備える半導体装置において、
前記磁性ワイヤーは、パルス磁場及びパルス電流のうち何れか一つにより移動する磁壁を備えてノッチフリーであることを特徴とする磁壁の移動を利用した半導体装置。 - 前記パルス磁場は、15〜200[Oe]の強度を有することを特徴とする請求項1に記載の磁壁の移動を利用した半導体装置。
- 前記パルス磁場は、前記磁壁を周期的に振動移動させる連続磁場の強度ほどの強度を有することを特徴とする請求項1に記載の磁壁の移動を利用した半導体装置。
- 前記パルス磁場は、前記磁壁の振動周期の40〜80%に該当する1回オン持続時間を有することを特徴とする請求項3に記載の磁壁の移動を利用した半導体装置。
- 前記パルス電流は、1.5×107〜2.0×1010A/cmの強度を有することを特徴とする請求項1に記載の磁壁の移動を利用した半導体装置。
- 前記パルス電流は、前記磁壁を周期的に振動移動させる連続電流の強度ほどの強度を有することを特徴とする請求項1に記載の磁壁の移動を利用した半導体装置。
- 前記パルス電流は、前記磁壁の振動周期の40〜80%に該当する1回オン持続時間を有することを特徴とする請求項6に記載の磁壁の移動を利用した半導体装置。
- 前記磁性ワイヤーは、5〜100nmの幅を有することを特徴とする請求項1に記載の磁壁の移動を利用した半導体装置。
- 前記磁性ワイヤーは、5〜50nmの厚さを有することを特徴とする請求項1に記載の磁壁の移動を利用した半導体装置。
- 前記磁性ワイヤーは、0.001〜0.1のダンピング定数を有することを特徴とする請求項1に記載の磁壁の移動を利用した半導体装置。
- 前記磁性ワイヤーは、Ni−Fe、Co、Co−Ni、Co−Fe及びCo−Fe−Niからなる群から選択される何れか一つからなることを特徴とする請求項1に記載の磁壁の移動を利用した半導体装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060069495A KR100745767B1 (ko) | 2006-07-25 | 2006-07-25 | 자구벽 이동을 이용한 반도체 장치 |
KR10-2006-0069495 | 2006-07-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008034808A true JP2008034808A (ja) | 2008-02-14 |
JP5111945B2 JP5111945B2 (ja) | 2013-01-09 |
Family
ID=38601790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007150690A Active JP5111945B2 (ja) | 2006-07-25 | 2007-06-06 | 磁壁の移動を利用した半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7710756B2 (ja) |
JP (1) | JP5111945B2 (ja) |
KR (1) | KR100745767B1 (ja) |
CN (1) | CN101114693B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009301699A (ja) * | 2008-06-16 | 2009-12-24 | Samsung Electronics Co Ltd | 磁壁移動を利用した情報保存装置の駆動方法 |
JP2011100517A (ja) * | 2009-11-06 | 2011-05-19 | Nippon Hoso Kyokai <Nhk> | 光磁気記録媒体再生装置および光磁気記録媒体再生方法 |
JP2012053957A (ja) * | 2010-09-02 | 2012-03-15 | Nippon Hoso Kyokai <Nhk> | 磁気記録媒体、磁気再生装置、磁気再生方法 |
JP2012527098A (ja) * | 2009-05-14 | 2012-11-01 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | 磁気電気素子及び測定方法 |
US8363461B2 (en) | 2008-07-10 | 2013-01-29 | Nec Corporation | Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory |
US8625327B2 (en) | 2008-07-15 | 2014-01-07 | Nec Corporation | Magnetic random access memory and initializing method for the same |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4945721B2 (ja) * | 2004-10-27 | 2012-06-06 | 国立大学法人東北大学 | 磁気抵抗効果素子及び磁気メモリ装置 |
KR100910369B1 (ko) | 2007-12-24 | 2009-08-04 | 인하대학교 산학협력단 | 기억 장치, 그 동작 방법 및 그 형성 방법 |
CN101752003B (zh) * | 2008-11-28 | 2012-11-07 | 财团法人工业技术研究院 | 磁性移位寄存存储器以及数据存取方法 |
US8406029B2 (en) | 2009-02-17 | 2013-03-26 | Samsung Electronics Co., Ltd. | Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices |
US8050074B2 (en) * | 2009-02-17 | 2011-11-01 | Samsung Electronics Co., Ltd. | Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices |
US8279667B2 (en) * | 2009-05-08 | 2012-10-02 | Samsung Electronics Co., Ltd. | Integrated circuit memory systems and program methods thereof including a magnetic track memory array using magnetic domain wall movement |
US8638601B1 (en) * | 2012-07-06 | 2014-01-28 | International Business Machines Corporation | Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces |
CN104575581B (zh) * | 2013-10-21 | 2017-10-10 | 华为技术有限公司 | 一种存储单元、存储器及存储单元控制方法 |
CN105097008B (zh) * | 2014-04-28 | 2018-03-09 | 华为技术有限公司 | 一种驱动脉冲的确定方法、控制器及磁性存储设备 |
JP2017143175A (ja) * | 2016-02-10 | 2017-08-17 | 株式会社東芝 | 磁気記憶装置 |
KR20210052093A (ko) | 2019-10-31 | 2021-05-10 | 삼성전자주식회사 | 자기 메모리 장치 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6452240B1 (en) * | 2000-10-30 | 2002-09-17 | International Business Machines Corporation | Increased damping of magnetization in magnetic materials |
US20050094427A1 (en) * | 2003-06-10 | 2005-05-05 | International Business Machines Corporation | Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same |
JP2005123617A (ja) * | 2003-10-14 | 2005-05-12 | Internatl Business Mach Corp <Ibm> | パターン化しない連続磁性層にデータを記憶するシステムおよび方法 |
JP2005340824A (ja) * | 2004-05-21 | 2005-12-08 | Samsung Electronics Co Ltd | 磁気ram、磁気ramの記録方法及び磁気ramの読取方法 |
JP2006005308A (ja) * | 2004-06-21 | 2006-01-05 | Victor Co Of Japan Ltd | 不揮発性磁気メモリ |
JP2006073930A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ |
WO2006046591A1 (ja) * | 2004-10-27 | 2006-05-04 | Keio University | 磁気抵抗効果素子及び磁気メモリ装置 |
JP2006128579A (ja) * | 2004-11-01 | 2006-05-18 | Sony Corp | 記憶素子及びメモリ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6724652B2 (en) | 2002-05-02 | 2004-04-20 | Micron Technology, Inc. | Low remanence flux concentrator for MRAM devices |
US7034374B2 (en) | 2003-08-22 | 2006-04-25 | Micron Technology, Inc. | MRAM layer having domain wall traps |
US7236386B2 (en) | 2004-12-04 | 2007-06-26 | International Business Machines Corporation | System and method for transferring data to and from a magnetic shift register with a shiftable data column |
KR100933888B1 (ko) | 2005-12-29 | 2009-12-28 | 서울시립대학교 산학협력단 | 자성 금속을 이용한 자기 기억 소자 |
-
2006
- 2006-07-25 KR KR1020060069495A patent/KR100745767B1/ko active IP Right Grant
- 2006-12-22 CN CN200610168680.3A patent/CN101114693B/zh active Active
-
2007
- 2007-01-22 US US11/655,927 patent/US7710756B2/en active Active
- 2007-06-06 JP JP2007150690A patent/JP5111945B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6452240B1 (en) * | 2000-10-30 | 2002-09-17 | International Business Machines Corporation | Increased damping of magnetization in magnetic materials |
US20050094427A1 (en) * | 2003-06-10 | 2005-05-05 | International Business Machines Corporation | Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same |
JP2005123617A (ja) * | 2003-10-14 | 2005-05-12 | Internatl Business Mach Corp <Ibm> | パターン化しない連続磁性層にデータを記憶するシステムおよび方法 |
JP2005340824A (ja) * | 2004-05-21 | 2005-12-08 | Samsung Electronics Co Ltd | 磁気ram、磁気ramの記録方法及び磁気ramの読取方法 |
JP2006005308A (ja) * | 2004-06-21 | 2006-01-05 | Victor Co Of Japan Ltd | 不揮発性磁気メモリ |
JP2006073930A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ |
WO2006046591A1 (ja) * | 2004-10-27 | 2006-05-04 | Keio University | 磁気抵抗効果素子及び磁気メモリ装置 |
JP2006128579A (ja) * | 2004-11-01 | 2006-05-18 | Sony Corp | 記憶素子及びメモリ |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009301699A (ja) * | 2008-06-16 | 2009-12-24 | Samsung Electronics Co Ltd | 磁壁移動を利用した情報保存装置の駆動方法 |
KR101430170B1 (ko) | 2008-06-16 | 2014-08-13 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보저장장치의 구동방법 |
US8363461B2 (en) | 2008-07-10 | 2013-01-29 | Nec Corporation | Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory |
US8625327B2 (en) | 2008-07-15 | 2014-01-07 | Nec Corporation | Magnetic random access memory and initializing method for the same |
JP2012527098A (ja) * | 2009-05-14 | 2012-11-01 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | 磁気電気素子及び測定方法 |
US9634236B2 (en) | 2009-05-14 | 2017-04-25 | Forschungszentrum Juelich Gmbh | Magnetoelectronic components and measurement method |
JP2011100517A (ja) * | 2009-11-06 | 2011-05-19 | Nippon Hoso Kyokai <Nhk> | 光磁気記録媒体再生装置および光磁気記録媒体再生方法 |
JP2012053957A (ja) * | 2010-09-02 | 2012-03-15 | Nippon Hoso Kyokai <Nhk> | 磁気記録媒体、磁気再生装置、磁気再生方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100745767B1 (ko) | 2007-08-02 |
US7710756B2 (en) | 2010-05-04 |
JP5111945B2 (ja) | 2013-01-09 |
CN101114693A (zh) | 2008-01-30 |
CN101114693B (zh) | 2014-06-11 |
US20080025060A1 (en) | 2008-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5111945B2 (ja) | 磁壁の移動を利用した半導体装置 | |
JP5403888B2 (ja) | 磁区壁の移動を利用した情報保存装置 | |
JP5305627B2 (ja) | 磁区壁移動を利用したメモリ装置 | |
EP2353167B1 (en) | Racetrack memory device | |
KR101430170B1 (ko) | 자구벽 이동을 이용한 정보저장장치의 구동방법 | |
US7864556B2 (en) | Magnetic domain information storage device and method of manufacturing the same | |
US8194430B2 (en) | Information storage devices using movement of magnetic domain wall and methods of manufacturing the information storage device | |
JP2006196708A (ja) | 磁気情報記録素子、磁気情報記録媒体および磁気情報記録素子の磁壁生成方法 | |
KR100813261B1 (ko) | 자구벽 이동을 이용한 반도체 장치 | |
US20100238698A1 (en) | Data writing and reading method for memory device employing magnetic domain wall movement | |
JP2008166787A (ja) | 磁壁移動を利用した情報保存装置及びその製造方法 | |
CN110534143A (zh) | 一种基于磁性格明子的赛道存储器的多电极写入方法 | |
KR101423188B1 (ko) | 자구벽 이동을 이용한 정보저장장치 및 그 동작방법 | |
JP2010010605A (ja) | 磁気メモリ素子、磁気メモリ装置およびメモリ素子製造方法 | |
JP2020061481A (ja) | 磁壁移動型磁気記録装置および磁気記録アレイ | |
KR101323717B1 (ko) | 자구벽 이동을 이용한 정보 저장 장치 및 그 제조 방법 | |
KR20090074873A (ko) | 자구벽 이동을 이용한 자기 기억 소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100525 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110502 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120510 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120522 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120822 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120911 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121010 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151019 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5111945 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |