KR100933888B1 - 자성 금속을 이용한 자기 기억 소자 - Google Patents
자성 금속을 이용한 자기 기억 소자 Download PDFInfo
- Publication number
- KR100933888B1 KR100933888B1 KR1020050134308A KR20050134308A KR100933888B1 KR 100933888 B1 KR100933888 B1 KR 100933888B1 KR 1020050134308 A KR1020050134308 A KR 1020050134308A KR 20050134308 A KR20050134308 A KR 20050134308A KR 100933888 B1 KR100933888 B1 KR 100933888B1
- Authority
- KR
- South Korea
- Prior art keywords
- magnetic
- metal
- memory device
- wall
- metal electrode
- Prior art date
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
그리고, 상기 세 개의 부분 중 양측 부분에는 각각 제1 및 제2 쓰기 금속 전극(20, 40)이 결합되고, 중앙 부분에는 읽기 금속 전극(30)이 결합된다.
Claims (4)
- 나노 크기의 자성 금속 박막을 구비하고,상기 자성 금속 박막은 그 길이 방향을 따라 2개의 지점이 다른 부분에 비해 오목하게 형성되어 이 오목 부분에 의해 3개의 부분으로 구분되며,상기 자성 금속 박막의 3개 부분 중 양측 부분에는 쓰기 금속 전극이 결합되고, 상기 자성 금속 박막의 3개 부분 중 중앙 부분에는 읽기 금속 전극이 결합되며,상기 2개의 오목 부분 중 하나가 자벽을 형성하고,상기 자벽의 위치는 두 개의 쓰기 금속 전극을 통하여 흐르는 전류에 의해 정해지며,상기 자벽의 위치는 읽기 금속 전극과 한 개의 쓰기 금속 전극 사이의 전압의 변화로 판정하는 것을 특징으로 하는 자성 금속을 이용한 자기 기억 소자.
- 삭제
- 삭제
- 삭제
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050134308A KR100933888B1 (ko) | 2005-12-29 | 2005-12-29 | 자성 금속을 이용한 자기 기억 소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050134308A KR100933888B1 (ko) | 2005-12-29 | 2005-12-29 | 자성 금속을 이용한 자기 기억 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060013476A KR20060013476A (ko) | 2006-02-10 |
KR100933888B1 true KR100933888B1 (ko) | 2009-12-28 |
Family
ID=37122819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050134308A KR100933888B1 (ko) | 2005-12-29 | 2005-12-29 | 자성 금속을 이용한 자기 기억 소자 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100933888B1 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100745767B1 (ko) | 2006-07-25 | 2007-08-02 | 삼성전자주식회사 | 자구벽 이동을 이용한 반도체 장치 |
KR100790885B1 (ko) * | 2006-09-15 | 2008-01-02 | 삼성전자주식회사 | 자구 벽 이동을 이용한 정보 저장 장치 |
KR100837403B1 (ko) * | 2006-09-15 | 2008-06-12 | 삼성전자주식회사 | 자구 벽 이동을 이용한 정보 저장 장치의 정보 기록 방법및 정보 읽기 방법 |
KR100790886B1 (ko) | 2006-09-15 | 2008-01-03 | 삼성전자주식회사 | 자구 벽 이동을 이용한 정보 저장 장치 |
KR100829569B1 (ko) | 2006-10-18 | 2008-05-14 | 삼성전자주식회사 | 자구벽 이동을 이용한 반도체 장치 및 그의 제조방법 |
KR100910369B1 (ko) * | 2007-12-24 | 2009-08-04 | 인하대학교 산학협력단 | 기억 장치, 그 동작 방법 및 그 형성 방법 |
KR20100104044A (ko) | 2009-03-16 | 2010-09-29 | 삼성전자주식회사 | 정보저장장치 및 그의 동작방법 |
US9048410B2 (en) | 2013-05-31 | 2015-06-02 | Micron Technology, Inc. | Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005069368A1 (ja) * | 2004-01-15 | 2005-07-28 | Japan Science And Technology Agency | 電流注入磁壁移動素子 |
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2005
- 2005-12-29 KR KR1020050134308A patent/KR100933888B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005069368A1 (ja) * | 2004-01-15 | 2005-07-28 | Japan Science And Technology Agency | 電流注入磁壁移動素子 |
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Publication number | Publication date |
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KR20060013476A (ko) | 2006-02-10 |
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