JP2007266369A - 配線基板 - Google Patents
配線基板 Download PDFInfo
- Publication number
- JP2007266369A JP2007266369A JP2006090340A JP2006090340A JP2007266369A JP 2007266369 A JP2007266369 A JP 2007266369A JP 2006090340 A JP2006090340 A JP 2006090340A JP 2006090340 A JP2006090340 A JP 2006090340A JP 2007266369 A JP2007266369 A JP 2007266369A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- solder layer
- tin solder
- phase
- electrode film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000679 solder Inorganic materials 0.000 claims abstract description 84
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000005496 eutectics Effects 0.000 claims abstract description 9
- 239000010931 gold Substances 0.000 claims description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 229910052737 gold Inorganic materials 0.000 claims description 21
- 238000001330 spinodal decomposition reaction Methods 0.000 claims description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 14
- 238000003475 lamination Methods 0.000 abstract description 4
- 238000003860 storage Methods 0.000 abstract description 2
- 239000012071 phase Substances 0.000 description 53
- 239000010408 film Substances 0.000 description 44
- 230000035882 stress Effects 0.000 description 16
- 230000008859 change Effects 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000010301 surface-oxidation reaction Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】基板1と、該基板1上に形成された電極膜2と、該電極膜2に形成された金錫半田層3とからなる配線基板において、前記金錫半田層3は、前記電極膜との接合面が、ζ相とσ相が共晶析出した層であり、前記接合面と対向する表面が、アモルファス相を含む層であることを特徴とする配線基板。
【選択図】図1
Description
2:電極膜
3:金錫半田層
4:金からなる膜
5:アモルファス相を含まない金錫半田層である。
Claims (4)
- 基板と、該基板上に形成された電極膜と、該電極膜に形成された金錫半田層とからなる配線基板において、前記金錫半田層は、前記電極膜との接合面が、ζ相とσ相が共晶析出した層であり、前記接合面と対向する表面が、アモルファス相を含む層であることを特徴とする配線基板。
- 前記表面が、金と錫のスピノーダル分解を生じたアモルファス相であることを特徴とする請求項1に記載の配線基板。
- 前記スピノーダル分解が、異方性であることを特徴とする請求項2に記載の配線基板。
- 前記表面に、金からなる膜を有することを特徴とする請求項1に記載の配線基板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006090340A JP4804190B2 (ja) | 2006-03-29 | 2006-03-29 | 配線基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006090340A JP4804190B2 (ja) | 2006-03-29 | 2006-03-29 | 配線基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007266369A true JP2007266369A (ja) | 2007-10-11 |
JP4804190B2 JP4804190B2 (ja) | 2011-11-02 |
Family
ID=38639052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006090340A Expired - Fee Related JP4804190B2 (ja) | 2006-03-29 | 2006-03-29 | 配線基板 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4804190B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7181843B2 (ja) | 2019-07-30 | 2022-12-01 | 日本特殊陶業株式会社 | 配線基板、および配線基板の製造方法 |
JP7508918B2 (ja) | 2020-07-22 | 2024-07-02 | 日本電気硝子株式会社 | はんだ膜及びその製造方法、光学デバイス用部品、並びに光学デバイス |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54103764A (en) * | 1978-02-03 | 1979-08-15 | Hitachi Ltd | Brazing material |
JPH01138777A (ja) * | 1987-11-25 | 1989-05-31 | Mitsubishi Electric Corp | 光半導体素子用サブマウント |
JPH06277870A (ja) * | 1993-03-26 | 1994-10-04 | Nippon Steel Corp | 板厚精度の優れた極薄Au−Sn合金ろう材 |
JPH06326210A (ja) * | 1993-05-13 | 1994-11-25 | Mitsubishi Electric Corp | 光半導体素子用サブマウント |
-
2006
- 2006-03-29 JP JP2006090340A patent/JP4804190B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54103764A (en) * | 1978-02-03 | 1979-08-15 | Hitachi Ltd | Brazing material |
JPH01138777A (ja) * | 1987-11-25 | 1989-05-31 | Mitsubishi Electric Corp | 光半導体素子用サブマウント |
JPH06277870A (ja) * | 1993-03-26 | 1994-10-04 | Nippon Steel Corp | 板厚精度の優れた極薄Au−Sn合金ろう材 |
JPH06326210A (ja) * | 1993-05-13 | 1994-11-25 | Mitsubishi Electric Corp | 光半導体素子用サブマウント |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7181843B2 (ja) | 2019-07-30 | 2022-12-01 | 日本特殊陶業株式会社 | 配線基板、および配線基板の製造方法 |
JP7508918B2 (ja) | 2020-07-22 | 2024-07-02 | 日本電気硝子株式会社 | はんだ膜及びその製造方法、光学デバイス用部品、並びに光学デバイス |
Also Published As
Publication number | Publication date |
---|---|
JP4804190B2 (ja) | 2011-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101476343B1 (ko) | 금속화된 세라믹 베이스를 갖는 컴포넌트 | |
TWI302722B (en) | Ubm pad, solder contact and methods for creating a solder joint | |
JP2007528601A (ja) | 信頼性が高く、費用効果があり、熱的に強いAuSnダイ取付け技術 | |
JPWO2016006660A1 (ja) | 異方導電性部材および多層配線基板 | |
JP4544964B2 (ja) | 放熱基板 | |
JP2012084788A (ja) | 高温半導体素子用平角状銀(Ag)クラッド銅リボン | |
WO1994014190A1 (en) | Surface structure for soldering and non-flux soldering method using the same | |
US11195815B2 (en) | Semiconductor device and manufacturing method thereof with Cu and Sn intermetallic compound | |
JP5031677B2 (ja) | 接合構造体の製造方法 | |
JP4804190B2 (ja) | 配線基板 | |
JP2006114917A (ja) | 接着力に優れた多層薄膜を含む素子及びその製造方法 | |
US20100224994A1 (en) | Low Temperature Metal to Silicon Diffusion and Silicide Wafer Bonding | |
WO2019088068A1 (ja) | はんだ継手、およびはんだ継手の形成方法 | |
JP2005032834A (ja) | 半導体チップと基板との接合方法 | |
JP2008080393A (ja) | 包晶系合金を用いた接合体、接合方法、及び半導体装置 | |
JP2001127375A (ja) | 光半導体素子搭載用サブマウント | |
JP2008147309A (ja) | セラミックス基板およびこれを用いた半導体モジュール | |
CN109103114B (zh) | 形成氧化铝层的方法、有氧化铝层的金属表面和电子器件 | |
Zheng et al. | Die attach for high temperature electronics packaging | |
JP6116857B2 (ja) | Au系はんだダイアタッチメント半導体装置及びその製造方法 | |
CN112951786A (zh) | 焊料材料、层结构及其形成方法、芯片封装及其形成方法、芯片布置及其形成方法 | |
JP2001048668A (ja) | セラミックスと金属の接合方法および接合体および圧電振動装置 | |
JP5672685B2 (ja) | 半導体装置の製造方法 | |
JP2010205974A (ja) | 半導体装置 | |
KR101372205B1 (ko) | 리드 프레임 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080916 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101026 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101109 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110106 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110712 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110809 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4804190 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140819 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |