JP2007260899A - 導電性パッドのコンディショニングスウィーププロファイルを調整することによる除去プロファイルの調節 - Google Patents
導電性パッドのコンディショニングスウィーププロファイルを調整することによる除去プロファイルの調節 Download PDFInfo
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- 239000006227 byproduct Substances 0.000 description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
【解決手段】一実施形態において、基板の研磨前のプロファイルが決定され、研磨パッドのコンディショニングパラメータがそのプロファイルに基づいて調整される。コンディショニングヘッドのスウィープ範囲及び周波数などのパラメータ及び下向きの力及び回転速度のコンディショニングエレメントがパッドの最適な研磨能力を維持するために、パッドの部分に対し、選択的にコンディショニングが行われるように調整される。
【選択図】図5
Description
Claims (15)
- 到来する基板の厚さのプロファイルを決定し、
この前記厚さのプロファイルに基づきコンディショニングパラメータを設定し、
前記コンディショニングパラメータに基づき研磨パッドの処理表面に対してコンディショニングを行うことを含む半導体基板を処理するための方法。 - 前記決定することは前記基板の表面にわたり導電性材料の厚さのプロファイルを決定することを含む請求項1記載の方法。
- 前記設定することはコンディショニングヘッドのスウィープ範囲、コンディショニングヘッドのスウィープ周波数、コンディショニングエレメントに与えられる圧力、コンディショニングエレメントの回転速度、及びそれらの組み合わせの内の少なくとも1つを設定することを含む請求項1記載の方法。
- 前記設定することはコンディショニングヘッドのスウィープ範囲を半径全長のスウィープ範囲に設定することを含む請求項1記載の方法。
- 前記設定することはコンディショニングヘッドのスウィープ範囲を半径全長にわたるスウィープ範囲の分数の範囲に設定することを含む請求項1記載の方法。
- 前記設定することは約5スウィープ/分から約20スウィープ/分の間にコンディショニングヘッドのスウィープ周波数を設定することを含む請求項1記載の方法。
- 前記設定することは約0.7psiから約2.0psiの間に前記コンディショニングエレメントに印加される圧力を設定することを含む請求項1記載の方法。
- 前記設定することは約30RPMから約100RPMの間に前記コンディショニングエレメントの回転速度を設定することを請求項1記載の方法。
- コンディショニングの間に前記基板を研磨することを含む請求項1記載の方法。
- 前記処理表面のコンディショニングは研磨プロセスの前に行われる請求項1記載の方法。
- 前記研磨パッドの処理表面は導電性である請求項1記載の方法。
- 到来する基板の上の導電性材料の厚さのプロファイルを示す計測値を決定し、
前記計測値に基づいて研磨パッドの導電性の処理表面上の電気特性を変化させることを含む半導体基板を処理する方法。 - 前記変化させることは、前記計測値に基づいて1つ以上のコンディショニングパラメータを設定し、
前記研磨パッドの前記処理表面に対して前記基板を処理し、
前記コンディショニングパラメータを用いて前記処理表面に対してコンディショニングを行うことを含む請求項12記載の方法。 - 前記設定することは、コンディショニングヘッドのスウィープ範囲を調整すること、コンディショニングヘッドのスウィープ周波数を調整すること、コンディショニングエレメントに印加される圧力を調整すること、コンディショニングエレメントの回転速度を調整すること、及びそれらの組み合わせのうちの少なくとも1つを含む請求項12記載の方法。
- 前記コンディショニングヘッドのスウィープ周波数は約5スウィープ/分から約20スウィープ/分の間である請求項14記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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US11/392,193 US20070227902A1 (en) | 2006-03-29 | 2006-03-29 | Removal profile tuning by adjusting conditioning sweep profile on a conductive pad |
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JP2007260899A true JP2007260899A (ja) | 2007-10-11 |
JP2007260899A5 JP2007260899A5 (ja) | 2010-03-11 |
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JP2007083542A Pending JP2007260899A (ja) | 2006-03-29 | 2007-03-28 | 導電性パッドのコンディショニングスウィーププロファイルを調整することによる除去プロファイルの調節 |
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US (1) | US20070227902A1 (ja) |
JP (1) | JP2007260899A (ja) |
KR (1) | KR100857661B1 (ja) |
CN (1) | CN101047125A (ja) |
TW (1) | TW200736418A (ja) |
Cited By (1)
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JP2015223636A (ja) * | 2014-05-26 | 2015-12-14 | 株式会社ディスコ | 研削研磨装置 |
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TWI473685B (zh) * | 2008-01-15 | 2015-02-21 | Iv Technologies Co Ltd | 研磨墊及其製造方法 |
US20100099342A1 (en) * | 2008-10-21 | 2010-04-22 | Applied Materials, Inc. | Pad conditioner auto disk change |
JP6372859B2 (ja) * | 2015-10-01 | 2018-08-15 | 信越半導体株式会社 | 研磨パッドのコンディショニング方法及び研磨装置 |
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Also Published As
Publication number | Publication date |
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KR20070098492A (ko) | 2007-10-05 |
KR100857661B1 (ko) | 2008-09-08 |
US20070227902A1 (en) | 2007-10-04 |
TW200736418A (en) | 2007-10-01 |
CN101047125A (zh) | 2007-10-03 |
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