JP2007218799A - 半導体磁気抵抗素子及びそれを用いた磁気センサモジュール - Google Patents
半導体磁気抵抗素子及びそれを用いた磁気センサモジュール Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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Abstract
【解決手段】2個以上のMRセンサチップを実装した半導体磁気抵抗素子の外周部にアジマス位置合わせ用溝27を形成することで、外部ケースとのアセンブリ精度を向上させる。さらに封止樹脂25で樹脂成形する際に裏面側に実装する磁石を挿入する磁石挿入用穴も一体化で成形する。さらに長く伸ばされたリードフレームの足23を折り曲げることで、半導体磁気抵抗素子の端子を一旦プリント基板に実装した後に端子ピンと接続させるような複雑な工程も無くすことが可能となる。
【選択図】図4
Description
図1は、本発明の半導体磁気抵抗素子の実施形態(実施例1)を示す上面図で、図2は、図1に示した半導体磁気抵抗素子の底面図、図3は、リードフレーム上に半導体磁気抵抗素子チップを実装し、ワイヤーボンディングを施した状態を示す斜視図、図4は、本発明の半導体磁気抵抗素子の上部斜め方向から見た斜視図、図5は、図4に示した本発明の半導体磁気抵抗素子を下部斜め方向から見た斜視図である。
図15に示すように樹脂モールドした半導体磁気抵抗素子8をプリント基板13上に半田付けし、さらにこのプリント基板13と端子ピン10を差込みハンダ付けにより形成した。SmCo系磁石を挿入した磁石ケースをプリント基板13の裏面側に取り付けて半導体磁気抵抗素子を完成させた。完成した半導体磁気抵抗素子に厚さ0.1mmのステンレス製CANを被せ、CANの裏面側をエポキシ樹脂で封止して半導体磁気抵抗素子を完成させた。
上述した実施例1の方法で作製した半導体磁気抵抗素子と比較例1の方法で作製した半導体磁気抵抗素子の各々30個の歯車回転検出測定を実施した結果から、A相とZ相との位相ずれを測定した結果を図8及び表1に示す。この表1には、本発明と従来技術により作製した半導体磁気抵抗素子各30個のA相−Z相間の位相差測定結果が示されている。
2 リードフレームの台座
3 リードフレームの足
4 金ワイヤー
8 半導体磁気抵抗素子
9 バイアス磁石
10 出力ピン
11 磁石ケース
12 接続配線
13 プリント基板
18 外部ケース
19 充填樹脂
21 磁気抵抗素子チップ
22 リードフレームの台座
23 リードフレームの足
24 金ワイヤー
25 封止樹脂
26 磁石挿入用穴
27 アジマス位置合わせ用溝
38 外部ケース
40 感磁面上金属部
41 突起
42 基材取付け用ネジ穴
43 磁気抵抗素子挿入穴
44 段差
Claims (8)
- 複数の半導体磁気抵抗素子チップが、リードフレーム上にダイボンドされているとともにワイヤボンドされており、前記半導体磁気抵抗素子チップ及び前記リードフレームが、該リードフレームの裏面に磁石挿入用穴を形成するように封止樹脂で一体成形され、該封止樹脂にアジマス位置合わせ部を設けたことを特徴とする半導体磁気抵抗素子。
- 前記アジマス位置合わせ部が、前記封止樹脂の外周部に複数設けられていることを特徴とする請求項1に記載の半導体磁気抵抗素子。
- 前記アジマス位置合わせ部が、溝又は突起を有することを特徴とする請求項1又は2に記載の半導体磁気抵抗素子。
- 前記封止樹脂の一体成形の形状が、前記半導体磁気抵抗素子チップ上の円形状の樹脂で、かつ2段形状であることを特徴とする請求項1,2又は3に記載の半導体磁気抵抗素子。
- 請求項1乃至4のいずれかに記載の半導体磁気抵抗素子と、前記アジマス位置合わせ部と嵌め合わされる嵌合部を有する外部ケースとを備えたことを特徴とする磁気センサモジュール。
- 前記外部ケースに前記半導体磁気抵抗素子を挿入する挿入穴を設け、該挿入穴の周縁部に前記嵌合部を複数設けて、前記アジマス位置合わせ部に前記嵌合部を嵌め合わせることにより、前記半導体磁気抵抗素子チップと前記外部ケースとの位置決めを行なうことを特徴とする請求項5に記載の磁気センサモジュール。
- 前記嵌合部が、突起又は溝を有することを特徴とする請求項5又は6に記載の磁気センサモジュール。
- 前記外部ケースに挿入された前記半導体磁気抵抗素子の感磁面の前面で、かつ前記挿入穴の前面に非磁性金属部材を設けたことを特徴とする請求項5,6又は7に記載の磁気センサモジュール。
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Cited By (41)
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JP2010145285A (ja) * | 2008-12-19 | 2010-07-01 | Alps Electric Co Ltd | 磁気検出装置及びその製造方法 |
JP2010522994A (ja) * | 2007-03-29 | 2010-07-08 | アレグロ・マイクロシステムズ・インコーポレーテッド | 集積回路パッケージの多段成形の方法および装置 |
JP2012511152A (ja) * | 2008-12-05 | 2012-05-17 | アレグロ・マイクロシステムズ・インコーポレーテッド | 磁場センサおよび磁場センサを製造する方法 |
JP2013250244A (ja) * | 2012-06-04 | 2013-12-12 | Nidec Sankyo Corp | 磁気センサ装置 |
JP2014508286A (ja) * | 2011-01-17 | 2014-04-03 | ジャンス マルチディメンショナル テクノロジー シーオー., エルティーディー | 単一パッケージブリッジ型磁界センサ |
US9411025B2 (en) | 2013-04-26 | 2016-08-09 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame and a magnet |
US9494660B2 (en) | 2012-03-20 | 2016-11-15 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US9620705B2 (en) | 2012-01-16 | 2017-04-11 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
US9666788B2 (en) | 2012-03-20 | 2017-05-30 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US9719806B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a ferromagnetic target object |
US9720054B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
US9812588B2 (en) | 2012-03-20 | 2017-11-07 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US9810519B2 (en) | 2013-07-19 | 2017-11-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as tooth detectors |
US9823092B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor providing a movement detector |
US9823090B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a target object |
US10012518B2 (en) | 2016-06-08 | 2018-07-03 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a proximity of an object |
US10041810B2 (en) | 2016-06-08 | 2018-08-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as movement detectors |
US10145908B2 (en) | 2013-07-19 | 2018-12-04 | Allegro Microsystems, Llc | Method and apparatus for magnetic sensor producing a changing magnetic field |
US10234513B2 (en) | 2012-03-20 | 2019-03-19 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US10260905B2 (en) | 2016-06-08 | 2019-04-16 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors to cancel offset variations |
US10310028B2 (en) | 2017-05-26 | 2019-06-04 | Allegro Microsystems, Llc | Coil actuated pressure sensor |
US10324141B2 (en) | 2017-05-26 | 2019-06-18 | Allegro Microsystems, Llc | Packages for coil actuated position sensors |
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US10495699B2 (en) | 2013-07-19 | 2019-12-03 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target |
US10641842B2 (en) | 2017-05-26 | 2020-05-05 | Allegro Microsystems, Llc | Targets for coil actuated position sensors |
US10712403B2 (en) | 2014-10-31 | 2020-07-14 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
US10823586B2 (en) | 2018-12-26 | 2020-11-03 | Allegro Microsystems, Llc | Magnetic field sensor having unequally spaced magnetic field sensing elements |
US10837943B2 (en) | 2017-05-26 | 2020-11-17 | Allegro Microsystems, Llc | Magnetic field sensor with error calculation |
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Cited By (64)
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JP2010522994A (ja) * | 2007-03-29 | 2010-07-08 | アレグロ・マイクロシステムズ・インコーポレーテッド | 集積回路パッケージの多段成形の方法および装置 |
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JP2010145285A (ja) * | 2008-12-19 | 2010-07-01 | Alps Electric Co Ltd | 磁気検出装置及びその製造方法 |
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