JP2007214502A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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Abstract
【解決手段】半導体基板の回路形成面側に封止層を形成した半導体ウェハの裏面を研削する工程を含む半導体装置の製造方法であって、半導体ウェハの裏面を研削するときに、回路形成面側の、半導体ウェハの直径の99%以上、100.5%以下の範囲を吸着する。
【選択図】 図3
Description
一般に、WCSP型の半導体装置は、シリコン等からなる半導体基板の回路形成面側を樹脂からなる封止層で封止した構造が用いられるが、物性値(主に熱膨張係数)が異なる異種材料が張り合わされた状態であるので半導体基板側が凸面となる反りが生じやすく、半導体ウェハの半導体基板の裏面を研削して半導体ウェハを薄くすると反りが更に大きくなって製造が困難になるという問題がある。
しかしながら、異種材料を張り合わせて形成された半導体ウェハの反りは、上記のように主にシリコン等の半導体基板と樹脂からなる封止層の熱膨張差に起因して生ずるものであるので、反りを矯正する手段を解除した後は、半導体ウェハに過大な反りが残留する虞があるという問題がある。
1)半導体ウェハの反りは、半導体ウェハの周縁部に欠け、例えば100μmを超える欠けが多数生じると、その欠けによる凹凸が半導体ウェハの周縁部の反りに対する拘束力を弱め、反りが助長される。
3)半導体ウェハの反りは、半導体ウェハに張り合わせる封止層の常温における曲げ弾性率に依存し、半導体基板の厚さに関わらず、その適値が存在する。
図1は、半導体装置の製造方法を、半導体ウェハに形成される電極パッドとこれに再配線等を介して接続するポスト電極との近傍を示す部分断面図で示したものである。
図1、図2において、1は半導体ウェハであり、本実施例ではWCSP型の半導体装置を複数同時に製造するための8インチの円盤状の半導体ウェハである。
4は絶縁層であり、半導体基板2の回路形成面3上に2酸化珪素(SiO2)等の絶縁材料で形成され、半導体基板2の各回路素子の上部には図示しないコンタクトホールが形成されている。
6は表面保護膜であり、窒化珪素(Si3N4)等の絶縁材料で形成された絶縁層4上および電極パッド5の縁部を覆う保護膜である。
9は金属薄膜層としての下地金属層であり、半導体ウェハ1のおもて面側の全面にチタン(Ti)、窒化チタン(TiN)、銅(Cu)等の導電材料を複数積層して形成され、層間絶縁膜7上およびスルーホール8の内面と電極パッド5上を覆っている。
13はバンプ電極であり、ポスト電極11のポスト端面11a上に半田等で形成された半球状の電極であって、図示しない実装基板の配線端子と接合され、半導体装置の外部端子として機能する。これにより半導体基板2に形成された回路素子は、電極パッド5、下地金属層9、再配線10、ポスト電極11およびバンプ電極13を介して外部装置と接続される。
17は保護テープであり、樹脂テープの片面にバンプ電極13の凹凸を吸収することができる柔軟性を有し、紫外線の照射により軟化する特性を有する粘着層が形成された片面粘着テープであって、半導体基板2の回路形成面3の反対側の面、つまり半導体ウェハ1の裏面1aを研削する際に、半導体ウェハ1のおもて面側を保護する機能を有している。
図3において、20は裏面研削装置である。
21は吸着ステージであり、半導体ウェハ1の裏面1aを研削する際に、保護テープ17を介して半導体ウェハ1のおもて面側を吸着保持し、半導体ウェハ1を回転させる回転台であって、その中心部には半導体ウェハ1を吸着する負圧が供給される負圧室22が形成されている。
25はグラインダであり、ダイヤモンド等の硬質の砥粒と無機質のフィラ等の充填材とを樹脂や金属等のバインダで固め、これを焼成して形成されたリング状の砥石26を備えており、高速で回転して半導体ウェハ1の裏面1aを研削する。また、砥石26の研削面26aは半導体ウェハ1の中心を通る位置に配置されている。
以下に、図1、図2にPで示す工程に従って、本実施例の半導体装置の製造方法について説明する。
P4(図1)、剥離剤を用いて工程P3で形成したレジストマスク18を除去し、再配線10およびポスト電極11を除く領域の下地金属層9をウェットマエッチングにより除去する。
この場合に、半導体ウェハ1のおもて面側の周縁部1bは、封止樹脂の漏れや裏面1aへの回り込みを防止するために封止金型に押さえ込まれているので、半導体ウェハ1のおもて面側の周縁部1bには2mm程度(半導体ウェハ1との直径比で4%程度)の封止層15が形成されていない部位が残り、そこに段差部が形成される。
P7(図2)、封止層15のおもて面側に露出しているポスト端面11aにスクリーン印刷法等により半田を印刷し、その後に熱処理により半田を溶融させてポスト端面11a上に半球形状に突出するバンプ電極13を形成する。
P9(図2)、裏面1aの研削を終えた半導体ウェハ1の保護テープ17に紫外線を照射して粘着層を反応硬化させ、半導体ウェハ1から保護テープ17を引き剥がし、半導体ウェハ1のおもて面側に弾性を有する分割用テープ28に貼り付け、分割用のブレード29により半導体ウェハ1のおもて面2に予め設けられた分割線に沿って縦横に切断して複数の個片に分割する。
このようにして、厚さが0.5mm以下(本実施例では0.25mm程度)の薄型化された小型のWCSP型の半導体装置30が製造される。
この欠けは、通常の吸着ステージ21では吸着面積が小さいために、剛性が低くなっている封止層15の周囲の段差部が、工程P8における半導体ウェハ1の裏面研削時にバタついて半導体基板2の周縁部1bに欠けを生じさせることが主な原因と考えられる。
図4の横軸は半導体ウェハ1の直径(ウェハ直径)に対する吸着面23aの直径の比(ウェハ直径比という。単位:パーセント)を示し、縦軸は半導体ウェハ1のウェハ反り量を示す。
図4から明らかに、ウェハ直径比が97%を超えると反りが減少し始め、ウェハ直径比が99%以上、100.5%以下の範囲で反りが減少した状態で安定し、ウェハ直径比が100.5%を超えると反りが急激に増加することが判る。
図5は、半導体ウェハ1の裏面1bの面粗度の大小が、反りに与える影響を評価した評価結果である。
図5の横軸は半導体ウェハ1の半導体基板2の裏面1bの研削後の面粗度(裏面粗度)を算術平均粗さRaで示し、縦軸は半導体ウェハ1のウェハ反り量を示す。
なお、図5に示すE点は工程P8の裏面研削を#8000、F点は#5000、G点は#2000の砥石26で研削したものである。
図5から明らかに、半導体ウェハ1の裏面研削後の裏面粗度を向上させれば、半導体ウェハ1の反りが減少することが判る。
このように、半導体ウェハ1の裏面研削後の裏面粗度をRa=5nm以下にすれば、裏面1aの凹凸が減少して半導体ウェハの裏面の反りに対する拘束力を高めることができ、半導体ウェハ1の反りを抑制することができる。
図6は、半導体ウェハ1の封止層15に用いる樹脂の曲げ弾性率が反りに与える影響を評価した評価結果である。
図6の横軸は封止層15に用いる樹脂の常温時の曲げ弾性率を示し、縦軸は半導体ウェハ1のウェハ反り量を示す。
図6から明らかに、半導体ウェハ1の反りは、封止層15に用いる樹脂の常温時の曲げ弾性率が14GPaを最小として、その両側で増加することが判る。
なお、半導体基板2の厚さを他の厚さとしても、図6と同様の評価結果が得られることは、実験的に確認されている。
図7は、封止層15に用いる樹脂の曲げ弾性率が、完成後の半導体装置30の抗折強度に与える影響を評価した評価結果である。
図7の横軸は半導体ウェハ1に用いた封止層15の樹脂の常温時の曲げ弾性率を示し、縦軸は完成後の半導体装置30の曲げ破壊応力を示す。
この相反する特性を考慮して半導体ウェハ1の反りを抑制するためには、封止層15の樹脂の常温時の曲げ弾性率を12GPa以上、18GPa以下の範囲とすることが望ましい。曲げ弾性率を12GPa未満にすると半導体ウェハ1の反りとしては適当な範囲が存在するが半導体装置30の抗折強度が低くなり過ぎ、18GPaを超えると半導体装置30の抗折強度としては適当な範囲が存在するが半導体ウェハ1の反りが大きくなり過ぎるからである。
このように、封止層15の樹脂の常温時の曲げ弾性率を12GPa以上、18GPa以下の範囲にすれば、半導体装置30の抗折強度を確保しながら半導体ウェハ1の反りを抑制することができる。
更に、半導体基板の回路形成面側に封止層を形成した半導体ウェハの裏面を研削する工程において、封止層を、常温の曲げ弾性率が、12GPa以上、18GPa以下の樹脂材料で形成するようにしたことによって、完成後の半導体装置の抗折強度を確保しながら半導体ウェハの反りを抑制することができる。
なお、本実施例においては、半導体ウェハの半導体基板は、シリコンからなるバルク基板であるとして説明したが、半導体ウェハは前記に限らず、封止層を形成したSOI(Silicon On Insulator)構造の半導体ウェハやSOS(Silicon On Sapphire)構造の半導体ウェハ等であっても、本発明を適用すれば上記と同様の効果を得ることができる。
1a 裏面
2 半導体基板
3 回路形成面
4 絶縁層
5 電極パッド
6 表面保護膜
7 層間絶縁膜
8 スルーホール
9 下地金属層
10 再配線
11 ポスト電極
11a ポスト端面
12 電極形成領域
13 バンプ電極
15 封止層
17 保護テープ
18 レジストマスク
20 裏面研削装置
21 吸着ステージ
22 負圧室
23 吸着板
23a 吸着面
25 グラインダ
26 砥石
26a 研削面
28 分割用テープ
29 ブレード
30 半導体装置
Claims (3)
- 半導体基板の回路形成面側に封止層を形成した半導体ウェハの裏面を研削する工程を含む半導体装置の製造方法であって、
前記半導体ウェハの裏面を研削するときに、前記回路形成面側の、前記半導体ウェハの直径の99%以上、100.5%以下の範囲を吸着することを特徴とする半導体装置の製造方法。 - 半導体基板の回路形成面側に封止層を形成した半導体ウェハの裏面を研削する工程を含む半導体装置の製造方法であって、
前記半導体ウェハの裏面の研削後の面粗度が、Ra=5nm以下であることを特徴とする半導体装置の製造方法。 - 半導体基板の回路形成面側に封止層を形成した半導体ウェハの裏面を研削する工程を含む半導体装置の製造方法であって、
前記封止層を、常温の曲げ弾性率が、12GPa以上、18GPa以下の樹脂材料で形成したことを特徴とする半導体装置の製造方法。
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JP2011029300A (ja) * | 2009-07-23 | 2011-02-10 | Disco Abrasive Syst Ltd | 研削装置のチャックテーブル |
JP2018531503A (ja) * | 2015-08-14 | 2018-10-25 | エム キューブド テクノロジーズ, インコーポレイテッド | 被加工物を仕上げるための、高度に制御可能な処理ツールを有する機械 |
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US20180290637A1 (en) * | 2017-04-06 | 2018-10-11 | Hendrickson Usa, L.L.C. | Tone ring with protective filler |
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Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20111227 |