JP2007180246A - 基板支持装置と、その製造方法 - Google Patents
基板支持装置と、その製造方法 Download PDFInfo
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- JP2007180246A JP2007180246A JP2005376558A JP2005376558A JP2007180246A JP 2007180246 A JP2007180246 A JP 2007180246A JP 2005376558 A JP2005376558 A JP 2005376558A JP 2005376558 A JP2005376558 A JP 2005376558A JP 2007180246 A JP2007180246 A JP 2007180246A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C29/00—Bearings for parts moving only linearly
- F16C29/04—Ball or roller bearings
- F16C29/045—Ball or roller bearings having rolling elements journaled in one of the moving parts
- F16C29/046—Ball or roller bearings having rolling elements journaled in one of the moving parts with balls journaled in pockets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
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- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
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- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】 基板支持装置は、平坦な上面22を有するアルミニウム合金製のプレート部材20と、プレート部材20に形成された有底の穴40と、穴40に収容されるスペーサ部材42とを具備している。スペーサ部材42はサファイヤの球体である。スペーサ部材42の直径D1は、穴40の内径D2よりも僅かに小さい。スペーサ部材42の上端部42aがプレート部材20の上面22から突出している。穴40の開口縁部45を含む領域に座ぐり部50が形成されている。座ぐり部50の底面50aに、穴40の開口縁部45をスペーサ部材42に向けて塑性変形させたかしめ部55と、かしめ部55の背後にV形の溝60が形成されている。
【選択図】 図4
Description
また、前記プレート部材の上面の前記開口縁部を囲む部位に座ぐり部が形成され、該座ぐり部の底面に前記かしめ部と前記溝が形成されているとよい。そしてこの座ぐり部の底面の前記溝の周りに***部が形成され、該***部が前記プレート部材の上面よりも低い位置に収まっているとよい。
図1は、例えば半導体製造プロセスで使用されるウエハ処理装置10を示している。ウエハ処理装置10は、例えばCVD(Chemical Vapor Deposition)やPVD(Plasma Vapor Deposition)、エッチング等の処理を行う際に使用され、密閉された筐体11と、筐体11の内部に設けられた基板支持装置12とを有している。
20…プレート部材
22…上面
30…スペーサ配置部
40…穴
42…スペーサ部材
42a…上端部
45…開口縁部
50…座ぐり部
55…かしめ部
60…溝
61,62…***部
70…かしめ治具
71…刃先
Claims (7)
- 平坦な上面を有する金属製のプレート部材と、
前記プレート部材の上面の複数箇所に形成されそれぞれ円形の開口縁部を有する有底の穴と、
前記穴の内径よりも小さな直径を有して前記穴に収容され上端部が前記上面から突出するスペーサ部材と、
前記開口縁部の開口幅が前記スペーサ部材の直径よりも小さくなるよう前記開口縁部を前記スペーサ部材に向けて塑性変形させてなるかしめ部と、
前記かしめ部の背後に前記開口縁部の周方向に沿って形成された溝と、
を具備したことを特徴とする基板支持装置。 - 前記溝が断面V形に形成され、この溝と前記かしめ部がそれぞれ前記開口縁部の全周にわたり環状に連続していることを特徴とする請求項1に記載の基板支持装置。
- 前記プレート部材の上面の前記開口縁部を囲む部位に座ぐり部が形成され、該座ぐり部の底面に前記かしめ部と前記溝が形成されていることを特徴とする請求項1または2に記載の基板支持装置。
- 前記座ぐり部の底面の前記溝の周りに***部が形成され、該***部が前記プレート部材の上面よりも低い位置に収まっていることを特徴とする請求項3に記載の基板支持装置。
- 前記スペーサ部材が酸化アルミニウムからなる球体であり、前記プレート部材がアルミニウム合金からなることを特徴とする請求項1ないし4のいずれか1項に記載の基板支持装置。
- 前記スペーサ部材がセラミックスからなる球体であり、前記プレート部材がアルミニウム合金からなることを特徴とする請求項1ないし4のいずれか1項に記載の基板支持装置。
- 金属製のプレート部材に平坦な上面を形成する工程と、
前記プレート部材の前記上面に複数の平座ぐり部を形成する工程と、
前記それぞれの平座ぐり部の底面に、円形の開口縁部を有する有底の穴を形成する工程と、
前記穴に該穴の内径よりも小さな直径のスペーサ部材を挿入する工程と、
前記開口縁部に沿う環状の刃先を有するかしめ治具を前記開口縁部の周囲に押込むことにより、前記開口縁部を前記スペーサ部材に向けて塑性変形させ前記開口縁部の開口幅を前記スペーサ部材の直径よりも小さくするかしめる工程と、
を具備したことを特徴とする基板支持装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2005376558A JP4629574B2 (ja) | 2005-12-27 | 2005-12-27 | 基板支持装置と、その製造方法 |
US11/642,155 US7503980B2 (en) | 2005-12-27 | 2006-12-20 | Substrate supporting apparatus |
US13/049,056 USRE43837E1 (en) | 2005-12-27 | 2011-03-16 | Substrate supporting apparatus |
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JP2005376558A JP4629574B2 (ja) | 2005-12-27 | 2005-12-27 | 基板支持装置と、その製造方法 |
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JP2007180246A true JP2007180246A (ja) | 2007-07-12 |
JP4629574B2 JP4629574B2 (ja) | 2011-02-09 |
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US (2) | US7503980B2 (ja) |
JP (1) | JP4629574B2 (ja) |
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Also Published As
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JP4629574B2 (ja) | 2011-02-09 |
US20070157466A1 (en) | 2007-07-12 |
USRE43837E1 (en) | 2012-12-04 |
US7503980B2 (en) | 2009-03-17 |
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