JP2007157766A - 窒化ガリウム半導体発光素子 - Google Patents
窒化ガリウム半導体発光素子 Download PDFInfo
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- JP2007157766A JP2007157766A JP2005346845A JP2005346845A JP2007157766A JP 2007157766 A JP2007157766 A JP 2007157766A JP 2005346845 A JP2005346845 A JP 2005346845A JP 2005346845 A JP2005346845 A JP 2005346845A JP 2007157766 A JP2007157766 A JP 2007157766A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 167
- 239000004065 semiconductor Substances 0.000 title claims abstract description 138
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 abstract description 29
- 239000013078 crystal Substances 0.000 abstract description 25
- 229910052594 sapphire Inorganic materials 0.000 abstract description 21
- 239000010980 sapphire Substances 0.000 abstract description 21
- 230000010287 polarization Effects 0.000 abstract description 13
- 230000002269 spontaneous effect Effects 0.000 abstract description 6
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 31
- 230000004888 barrier function Effects 0.000 description 13
- 230000000903 blocking effect Effects 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
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Abstract
【解決手段】サファイア基板1のR面上に、発光領域を含む窒化ガリウム半導体結晶2が形成されている。また、他の構成では、GaN基板3、4の面又はM面に窒化ガリウム半導体結晶2が形成される。これらの窒化ガリウム半導体結晶2は、その成長表面がN(窒素)極性面やGa極性面ではなく、無極性面となるので、p側のGaN/AlGaNの界面で発生する自発分極やピエゾ分極による電界の大きさを小さくすることができ、キャリア空乏化を回避することができる。
【選択図】 図1
Description
2 窒化ガリウム半導体結晶
3 GaN基板
4 GaN基板
Claims (3)
- 基板上に少なくともn型半導体層、発光領域、p型半導体層を順に備え、前記p型半導体層側に形成されるとともに1019cm−3以下のMgを含むAlGaN半導体層と、該AlGaN半導体層よりもn側に位置するGaN半導体層との界面を有する窒化ガリウム半導体発光素子であって、
前記n型半導体層からAlGaN半導体層までは、成長表面がGaNの窒素極性でもGa極性でもない無極性方向で形成されていることを特徴とする窒化ガリウム半導体発光素子。 - 基板上に少なくともn型半導体層、発光領域、p型半導体層を順に備え、前記p型半導体層側に形成されるとともに1019cm−3以下のMgを含むAlGaN半導体層と、該AlGaN半導体層よりもn側に位置するInGaN半導体層との界面を有する窒化ガリウム半導体発光素子であって、
前記n型半導体層からAlGaN半導体層までは、成長表面がGaNの窒素極性でもGa極性でもない無極性方向で形成されていることを特徴とする窒化ガリウム半導体発光素子。 - 基板上に少なくともn型半導体層、発光領域、p型半導体層を順に備え、前記p型半導体層側に形成されるとともに1019cm−3以下のMgを含むAlXGaN半導体層と該p型AlXGaN半導体層よりもn側に位置するAlYGaN半導体層(X>Y)との界面を有する窒化ガリウム半導体発光素子であって、
前記n型半導体層からAlXGaN半導体層までは、成長表面がGaNの窒素極性でもGa極性でもない無極性方向で形成されていることを特徴とする窒化ガリウム半導体発光素子。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005346845A JP5113330B2 (ja) | 2005-11-30 | 2005-11-30 | 窒化ガリウム半導体発光素子 |
KR1020087015914A KR20080075212A (ko) | 2005-11-30 | 2006-11-29 | 질화 갈륨 반도체 발광 소자 |
US12/085,836 US7872269B2 (en) | 2005-11-30 | 2006-11-29 | Gallium nitride semiconductor light emitting element |
CN2006800451527A CN101322292B (zh) | 2005-11-30 | 2006-11-29 | 氮化镓半导体发光元件 |
PCT/JP2006/323853 WO2007063920A1 (ja) | 2005-11-30 | 2006-11-29 | 窒化ガリウム半導体発光素子 |
EP06833656A EP1959530A1 (en) | 2005-11-30 | 2006-11-29 | Gallium nitride semiconductor light emitting element |
TW095144430A TW200737632A (en) | 2005-11-30 | 2006-11-30 | Gallium nitride semiconductor light-emitting element |
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JP2005346845A JP5113330B2 (ja) | 2005-11-30 | 2005-11-30 | 窒化ガリウム半導体発光素子 |
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Publication Number | Publication Date |
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JP2007157766A true JP2007157766A (ja) | 2007-06-21 |
JP5113330B2 JP5113330B2 (ja) | 2013-01-09 |
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JP2005346845A Expired - Fee Related JP5113330B2 (ja) | 2005-11-30 | 2005-11-30 | 窒化ガリウム半導体発光素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7872269B2 (ja) |
EP (1) | EP1959530A1 (ja) |
JP (1) | JP5113330B2 (ja) |
KR (1) | KR20080075212A (ja) |
CN (1) | CN101322292B (ja) |
TW (1) | TW200737632A (ja) |
WO (1) | WO2007063920A1 (ja) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009004538A (ja) * | 2007-06-21 | 2009-01-08 | Panasonic Corp | 半導体レーザ装置 |
KR100877774B1 (ko) * | 2007-09-10 | 2009-01-16 | 서울옵토디바이스주식회사 | 개선된 구조의 발광다이오드 |
JP2009032900A (ja) * | 2007-07-27 | 2009-02-12 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子 |
JP2009032709A (ja) * | 2007-07-24 | 2009-02-12 | Sanyo Electric Co Ltd | 半導体レーザ素子 |
JP2009038327A (ja) * | 2007-08-06 | 2009-02-19 | Sanyo Electric Co Ltd | 半導体素子の製造方法および半導体素子 |
JP2009088482A (ja) * | 2007-09-27 | 2009-04-23 | Seoul Opto Devices Co Ltd | 交流駆動型の発光ダイオード |
JP2009252836A (ja) * | 2008-04-02 | 2009-10-29 | Dowa Electronics Materials Co Ltd | 電流狭窄型半導体発光素子およびその製造方法 |
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2006
- 2006-11-29 US US12/085,836 patent/US7872269B2/en not_active Expired - Fee Related
- 2006-11-29 KR KR1020087015914A patent/KR20080075212A/ko not_active Application Discontinuation
- 2006-11-29 CN CN2006800451527A patent/CN101322292B/zh not_active Expired - Fee Related
- 2006-11-29 WO PCT/JP2006/323853 patent/WO2007063920A1/ja active Application Filing
- 2006-11-29 EP EP06833656A patent/EP1959530A1/en not_active Withdrawn
- 2006-11-30 TW TW095144430A patent/TW200737632A/zh unknown
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JP2009004538A (ja) * | 2007-06-21 | 2009-01-08 | Panasonic Corp | 半導体レーザ装置 |
JP2009032709A (ja) * | 2007-07-24 | 2009-02-12 | Sanyo Electric Co Ltd | 半導体レーザ素子 |
JP4605193B2 (ja) * | 2007-07-27 | 2011-01-05 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子 |
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JP2009088482A (ja) * | 2007-09-27 | 2009-04-23 | Seoul Opto Devices Co Ltd | 交流駆動型の発光ダイオード |
JP2009252836A (ja) * | 2008-04-02 | 2009-10-29 | Dowa Electronics Materials Co Ltd | 電流狭窄型半導体発光素子およびその製造方法 |
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JP2010272593A (ja) * | 2009-05-19 | 2010-12-02 | Hamamatsu Photonics Kk | 窒化物半導体発光素子及びその製造方法 |
JP2010068010A (ja) * | 2009-12-24 | 2010-03-25 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子 |
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JP2013123057A (ja) * | 2011-12-12 | 2013-06-20 | Lg Innotek Co Ltd | 発光素子パッケージ |
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JP2017143139A (ja) * | 2016-02-09 | 2017-08-17 | 株式会社東芝 | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20080075212A (ko) | 2008-08-14 |
TW200737632A (en) | 2007-10-01 |
CN101322292B (zh) | 2012-04-18 |
US20090146160A1 (en) | 2009-06-11 |
EP1959530A1 (en) | 2008-08-20 |
JP5113330B2 (ja) | 2013-01-09 |
WO2007063920A1 (ja) | 2007-06-07 |
US7872269B2 (en) | 2011-01-18 |
CN101322292A (zh) | 2008-12-10 |
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