JP2007109711A - 処理装置、処理方法及び記憶媒体 - Google Patents
処理装置、処理方法及び記憶媒体 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 185
- 238000000034 method Methods 0.000 title claims description 31
- 238000003860 storage Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000010438 heat treatment Methods 0.000 claims abstract description 45
- 238000005192 partition Methods 0.000 claims abstract description 28
- 238000010926 purge Methods 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims description 185
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 238000003672 processing method Methods 0.000 claims description 15
- 238000004590 computer program Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 48
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000638 solvent extraction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- -1 purge Chemical compound 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】被処理基板wを多段に搭載保持する保持具3と、該保持具3を収容して所定の処理ガス、温度及び圧力下で被処理基板wに所定の熱処理を施す処理容器4と、該処理容器4内に処理ガスを導入するガス導入部5と、処理容器4内を所定の圧力に真空排気する排気部6と、処理容器4を加熱する加熱部7とを備え、前記保持具3内には被処理基板wごとに隔壁板8で仕切られた処理空間10が形成され、前記ガス導入部5は各処理空間10にその一側からガスを導入するガス導入孔11を有し、前記排気部6はガス導入孔11と対向する側に各処理空間10ごとに排気する排気孔12を有している。
【選択図】図1
Description
w 半導体ウエハ(被処理基板)
3 ボート(保持具)
4 反応管(処理容器)
5 ガスインジェクタ(ガス導入部、ガス導入管)
6 排気ポート(排気部)
7 ヒータ(加熱部)
8 隔壁板
10 処理空間
11 ガス導入孔
12 排気孔
s 隙間
50 ガスインジェクションボックス(ガス導入部、ガス導入箱)
80 リング状隔壁板
100 処理空間
Claims (7)
- 被処理基板を多段に搭載保持する保持具と、該保持具を収容して所定の処理ガス、温度及び圧力下で被処理基板に所定の熱処理を施す処理容器と、該処理容器内に処理ガスを導入するガス導入部と、処理容器内を所定の圧力に真空排気する排気部と、処理容器を加熱する加熱部とを備えた処理装置であって、前記保持具内には被処理基板ごとに隔壁板で仕切られた処理空間が形成され、前記ガス導入部は各処理空間にその一側からガスを導入するガス導入孔を有し、前記排気部はガス導入孔と対向する側に各処理空間ごとに排気する排気孔を有していることを特徴とする処理装置。
- 被処理基板を多段に搭載保持する保持具と、該保持具を収容して所定の処理ガス、温度及び圧力下で被処理基板に所定の熱処理を施す処理容器と、該処理容器内に処理ガスを導入するガス導入部と、処理容器内を所定の圧力に真空排気する排気部と、処理容器内の被処理基板を加熱する加熱部とを備えた処理装置であって、前記保持具内には被処理基板を載置するリング状隔壁板で被処理基板ごとに仕切られた処理空間が形成され、前記ガス導入部は各処理空間にその一側からガスを導入するガス導入孔を有し、前記排気部はガス導入孔と対向する側に各処理空間ごとに排気する排気孔を有していることを特徴とする処理装置。
- 前記処理容器は、上端が共に閉塞されると共に一体化された内管部及び外管部からなる二重管構造であり、内管部内に前記保持具が収容され、内管部と外管部との間の空間部が排気部と連通し、前記内管部の内面には前記ガス導入部として起立したガス導入管を収容する収容溝部が形成されていることを特徴とする請求項1又は2記載の処理装置。
- 前記処理容器は、上端が共に閉塞されると共に一体化された内管部及び外管部からなる二重管構造であり、内管部内に前記保持具が収容され、内管部と外管部との間の空間部が排気部と連通し、前記空間部には前記ガス導入部として上下方向に連通したガス導入箱が形成されていることを特徴とする請求項1又は2記載の処理装置。
- 前記内管部の内周面と前記保持具の外周面との間に保持具の回転を許容する微小な隙間が形成されていることを特徴とする請求項3又は4記載の処理装置。
- 被処理基板を多段に搭載保持した保持具を処理容器内に収容して所定の処理ガス、温度及び圧力下で被処理基板に所定の処理を施す処理方法であって、前記保持具内に被処理基板ごとに仕切られて形成された各処理空間に、その一側から処理ガスを導入し、且つ他側から排気することにより被処理基板と平行な処理ガスの流れを形成して被処理基板に成膜処理を施す工程と、この工程後に保持具内の各処理空間に、その一側から不活性ガスを導入し、且つ他側から排気することにより各処理空間をパージする工程とを備えたことを特徴とする処理方法。
- 請求項1又は請求項2に記載した処理装置を用いて、請求項6に記載した処理方法を実施するために用いられるコンピュータプログラムを格納したことを特徴とする記憶媒体。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005296389A JP4426518B2 (ja) | 2005-10-11 | 2005-10-11 | 処理装置 |
PCT/JP2006/320118 WO2007043478A1 (ja) | 2005-10-11 | 2006-10-06 | 基板処理装置及び基板処理方法 |
US12/083,342 US7807587B2 (en) | 2005-10-11 | 2006-10-06 | Substrate processing apparatus and substrate processing method |
EP06811445A EP1936671A4 (en) | 2005-10-11 | 2006-10-06 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD |
KR1020087008530A KR101243541B1 (ko) | 2005-10-11 | 2006-10-06 | 기판 처리 장치, 기판 처리 방법 및 컴퓨터 판독 가능한 기억 매체 |
CN2006800379045A CN101288157B (zh) | 2005-10-11 | 2006-10-06 | 基板处理装置和基板处理方法 |
TW095137376A TWI412084B (zh) | 2005-10-11 | 2006-10-11 | A substrate processing apparatus and a substrate processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005296389A JP4426518B2 (ja) | 2005-10-11 | 2005-10-11 | 処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007109711A true JP2007109711A (ja) | 2007-04-26 |
JP4426518B2 JP4426518B2 (ja) | 2010-03-03 |
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JP2005296389A Active JP4426518B2 (ja) | 2005-10-11 | 2005-10-11 | 処理装置 |
Country Status (7)
Country | Link |
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US (1) | US7807587B2 (ja) |
EP (1) | EP1936671A4 (ja) |
JP (1) | JP4426518B2 (ja) |
KR (1) | KR101243541B1 (ja) |
CN (1) | CN101288157B (ja) |
TW (1) | TWI412084B (ja) |
WO (1) | WO2007043478A1 (ja) |
Cited By (14)
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JP2008202126A (ja) * | 2007-02-22 | 2008-09-04 | Elpida Memory Inc | 超臨界プロセス用バッチ式成膜装置 |
JP2010226092A (ja) * | 2009-02-27 | 2010-10-07 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
JP2011512031A (ja) * | 2008-02-12 | 2011-04-14 | チェ,キュ−ジョン | バッチ型原子層蒸着装置 |
WO2013054652A1 (ja) * | 2011-10-11 | 2013-04-18 | 株式会社日立国際電気 | 基板処理装置、基板処理方法、半導体装置の製造方法、および記録媒体 |
JP2014165500A (ja) * | 2013-02-26 | 2014-09-08 | Tera Semicon Corp | バッチ式基板処理装置 |
JP2014214380A (ja) * | 2013-04-25 | 2014-11-17 | エヌシーディ・カンパニー・リミテッド | 大面積基板用水平型原子層蒸着装置 |
WO2015041376A1 (ja) * | 2014-09-30 | 2015-03-26 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および反応管 |
JP2015137415A (ja) * | 2014-01-24 | 2015-07-30 | エヌシーディ・カンパニー・リミテッドNcd Co.,Ltd. | 大面積原子層蒸着装置 |
JP2017028260A (ja) * | 2015-07-20 | 2017-02-02 | ユ−ジーン テクノロジー カンパニー.リミテッド | 基板処理装置 |
US9613838B2 (en) | 2013-03-21 | 2017-04-04 | Tokyo Electron Limited | Batch-type vertical substrate processing apparatus and substrate holder |
KR20180138141A (ko) | 2017-06-19 | 2018-12-28 | 도쿄엘렉트론가부시키가이샤 | 기판 보유 지지구 및 이것을 사용한 기판 처리 장치 |
JP2020188280A (ja) * | 2017-02-23 | 2020-11-19 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、プログラムおよび反応管 |
JP2021028977A (ja) * | 2020-09-25 | 2021-02-25 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及び基板保持具 |
JP2021028955A (ja) * | 2019-08-09 | 2021-02-25 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及び基板保持具 |
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Also Published As
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CN101288157B (zh) | 2010-11-24 |
EP1936671A4 (en) | 2010-06-09 |
JP4426518B2 (ja) | 2010-03-03 |
TW200719412A (en) | 2007-05-16 |
KR20080045739A (ko) | 2008-05-23 |
US7807587B2 (en) | 2010-10-05 |
US20090305512A1 (en) | 2009-12-10 |
CN101288157A (zh) | 2008-10-15 |
KR101243541B1 (ko) | 2013-03-20 |
WO2007043478A1 (ja) | 2007-04-19 |
EP1936671A1 (en) | 2008-06-25 |
TWI412084B (zh) | 2013-10-11 |
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