JP2007059801A - 半導体装置の製造方法 - Google Patents
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- 238000010894 electron beam technology Methods 0.000 claims abstract description 21
- 238000005468 ion implantation Methods 0.000 claims abstract description 6
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- 239000002245 particle Substances 0.000 claims description 11
- 238000011084 recovery Methods 0.000 abstract description 54
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 8
- 239000011574 phosphorus Substances 0.000 abstract description 8
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- 230000010355 oscillation Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000001994 activation Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000002679 ablation Methods 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66128—Planar diodes
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】N型半導体基板1の一方の主面にPアノード層2とアノード電極3を形成した後、電子線を照射して半導体基板1の中に結晶欠陥を導入する。次いで、半導体基板1の他方の主面を研削して薄板化し、研削により露出した面から半導体基板1にリンをイオン注入する。次いで、その注入面にダブルパルス法でYAGレーザを照射し、半導体基板1の中に注入されたリンを電気的に活性化させるとともに、レーザ光の照射面から、薄板化されたウェハー全体の厚さの5〜30%に相当する深さまでの領域の結晶欠陥を回復させて、ソフトリカバリーとする。
【選択図】 図4
Description
2 第2半導体層(Pアノード層)
3 第1電極(アノード電極)
4 第3半導体層(N+カソード層)
5 第2電極(カソード電極)
Claims (9)
- 第1導電型の第1半導体層と、前記第1半導体層よりも高濃度で、かつ前記第1半導体層の一方の主面側で同第1半導体層に接する第2導電型の第2半導体層と、前記第2半導体層に電気的に接続する第1電極と、前記第1半導体層よりも高濃度で、かつ前記第1半導体層の他方の主面側で同第1半導体層に接する第1導電型の第3半導体層と、前記第3半導体層に電気的に接続する第2電極と、を備えた半導体装置を製造するにあたって、
第1導電型半導体基板の一方または他方の主面に荷電粒子を照射して前記半導体基板中に結晶欠陥を導入する工程と、
結晶欠陥が導入された半導体基板の前記他方の主面を研削する工程と、
研削により露出した面から前記半導体基板中に第1導電型または第2導電型の不純物をイオン注入法により導入する工程と、
研削により露出した面にレーザ光を照射して、前記半導体基板中に導入された不純物を電気的に活性化させるとともに、前記半導体基板中に導入された結晶欠陥のうち、レーザ光の照射面から所定の深さまでの領域の結晶欠陥を回復させる工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記半導体基板の一方の主面に前記第2半導体層と前記第1電極を形成した後に、荷電粒子の照射によって半導体基板中に結晶欠陥を導入する工程を行うことを特徴とする請求項1に記載の半導体装置の製造方法。
- レーザ光の照射により結晶欠陥を回復させる領域を、レーザ光の照射面から、研削後の全体の厚さの5%に相当する深さ以上30%に相当する深さ以下の範囲の任意の深さまでとすることを特徴とする請求項1または2に記載の半導体装置の製造方法。
- レーザ光の照射により結晶欠陥を回復させる領域を、レーザ光の照射面から、10μm以上40μm以下の範囲の任意の深さまでとすることを特徴とする請求項1または2に記載の半導体装置の製造方法。
- レーザ光の照射エリアごとに、複数のレーザ照射装置から所定の遅延時間だけ照射タイミングをずらして複数のパルスレーザを連続的に照射することを特徴とする請求項1〜4のいずれか一つに記載の半導体装置の製造方法。
- レーザ光の照射エリアごとに、レーザ光を照射する際のエネルギー密度を合計で1J/cm2以上4J/cm2以下とすることを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記レーザ光としてYAGレーザを用いることを特徴とする請求項1〜6のいずれか一つに記載の半導体装置の製造方法。
- 前記荷電粒子として電子線を用いることを特徴とする請求項1〜7のいずれか一つに記載の半導体装置の製造方法。
- 前記半導体基板としてFZウェハーを用いることを特徴とする請求項1〜8のいずれか一つに記載の半導体装置の製造方法。
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JP2005246037A JP5087828B2 (ja) | 2005-08-26 | 2005-08-26 | 半導体装置の製造方法 |
US11/464,489 US7517777B2 (en) | 2005-08-26 | 2006-08-14 | Method of manufacturing semiconductor device and semiconductor device formed by the method |
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JP2005246037A JP5087828B2 (ja) | 2005-08-26 | 2005-08-26 | 半導体装置の製造方法 |
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JP2012127604A Division JP5672269B2 (ja) | 2012-06-04 | 2012-06-04 | 半導体装置の製造方法 |
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JP2007059801A true JP2007059801A (ja) | 2007-03-08 |
JP5087828B2 JP5087828B2 (ja) | 2012-12-05 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008177203A (ja) * | 2007-01-16 | 2008-07-31 | Mitsubishi Electric Corp | 半導体デバイスの製造方法 |
DE102009019684A1 (de) | 2008-07-31 | 2010-02-11 | Mitsubishi Electric Corp. | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
WO2012026294A1 (ja) * | 2010-08-23 | 2012-03-01 | 株式会社日本製鋼所 | 半導体デバイスの製造方法および製造装置 |
JP2013030797A (ja) * | 2012-10-03 | 2013-02-07 | Japan Steel Works Ltd:The | 半導体デバイスの製造方法および製造装置 |
US9219141B2 (en) | 2013-07-10 | 2015-12-22 | Fuji Electric Co., Ltd. | Super junction MOSFET, method of manufacturing the same, and complex semiconductor device |
US9711634B2 (en) | 2013-09-18 | 2017-07-18 | Fuji Electric Co., Ltd. | Semiconductor device including a super junction MOSFET |
US9911733B2 (en) | 2014-11-17 | 2018-03-06 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
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JP5915756B2 (ja) * | 2012-08-22 | 2016-05-11 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5817678A (ja) * | 1981-07-24 | 1983-02-01 | Toshiba Corp | 半導体装置の製造方法 |
JPH07226405A (ja) * | 1994-12-19 | 1995-08-22 | Meidensha Corp | 半導体デバイスの製造方法 |
JP2001156299A (ja) * | 1999-11-26 | 2001-06-08 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
JP2005064429A (ja) * | 2003-08-20 | 2005-03-10 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
JP2005223301A (ja) * | 2003-06-24 | 2005-08-18 | Fuji Electric Device Technology Co Ltd | 半導体素子の製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0562924A (ja) | 1991-09-04 | 1993-03-12 | Sony Corp | レーザアニール装置 |
JP3105488B2 (ja) | 1992-10-21 | 2000-10-30 | 株式会社半導体エネルギー研究所 | レーザー処理方法 |
US6090646A (en) | 1993-05-26 | 2000-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
US5569624A (en) | 1995-06-05 | 1996-10-29 | Regents Of The University Of California | Method for shallow junction formation |
US6534380B1 (en) | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
KR100613703B1 (ko) | 1998-07-17 | 2006-08-21 | 인피니언 테크놀로지스 아게 | 높은 저지 전압용 전력 반도체 소자 |
US6393042B1 (en) | 1999-03-08 | 2002-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer and laser irradiation apparatus |
JP2000349042A (ja) | 1999-06-03 | 2000-12-15 | Toshiba Corp | 半導体素子の製造方法と製造装置 |
DE10055446B4 (de) * | 1999-11-26 | 2012-08-23 | Fuji Electric Co., Ltd. | Halbleiterbauelement und Verfahren zu seiner Herstellung |
JP4514861B2 (ja) | 1999-11-29 | 2010-07-28 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法および半導体装置の作製方法 |
JP2001177114A (ja) | 1999-12-17 | 2001-06-29 | Fuji Electric Co Ltd | 半導体装置 |
JP2001185504A (ja) | 1999-12-22 | 2001-07-06 | Sanyo Electric Co Ltd | レーザアニール方法及び装置 |
JP4967205B2 (ja) | 2001-08-09 | 2012-07-04 | 富士電機株式会社 | 半導体装置の製造方法 |
JP2003109912A (ja) | 2001-10-01 | 2003-04-11 | Matsushita Electric Ind Co Ltd | レーザアニール装置 |
JP4539011B2 (ja) | 2002-02-20 | 2010-09-08 | 富士電機システムズ株式会社 | 半導体装置 |
JP4364674B2 (ja) | 2003-02-28 | 2009-11-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
DE102004017723B4 (de) * | 2003-04-10 | 2011-12-08 | Fuji Electric Co., Ltd | In Rückwärtsrichtung sperrendes Halbleiterbauteil und Verfahren zu seiner Herstellung |
DE102004030268B4 (de) * | 2003-06-24 | 2013-02-21 | Fuji Electric Co., Ltd | Verfahren zum Herstellen eines Halbleiterelements |
JP4872190B2 (ja) | 2004-06-18 | 2012-02-08 | トヨタ自動車株式会社 | 半導体装置 |
-
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- 2005-08-26 JP JP2005246037A patent/JP5087828B2/ja active Active
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- 2006-08-14 US US11/464,489 patent/US7517777B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5817678A (ja) * | 1981-07-24 | 1983-02-01 | Toshiba Corp | 半導体装置の製造方法 |
JPH07226405A (ja) * | 1994-12-19 | 1995-08-22 | Meidensha Corp | 半導体デバイスの製造方法 |
JP2001156299A (ja) * | 1999-11-26 | 2001-06-08 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
JP2005223301A (ja) * | 2003-06-24 | 2005-08-18 | Fuji Electric Device Technology Co Ltd | 半導体素子の製造方法 |
JP2005064429A (ja) * | 2003-08-20 | 2005-03-10 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008177203A (ja) * | 2007-01-16 | 2008-07-31 | Mitsubishi Electric Corp | 半導体デバイスの製造方法 |
DE102009019684B4 (de) * | 2008-07-31 | 2013-11-28 | Mitsubishi Electric Corp. | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
DE102009019684A1 (de) | 2008-07-31 | 2010-02-11 | Mitsubishi Electric Corp. | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
JP2010040562A (ja) * | 2008-07-31 | 2010-02-18 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US7800204B2 (en) | 2008-07-31 | 2010-09-21 | Mitsubishi Electric Corporation | Semiconductor device and method of fabricating the same |
US8420496B2 (en) | 2008-07-31 | 2013-04-16 | Mitsubishi Electric Corporation | Semiconductor device and method of fabricating the same |
WO2012026294A1 (ja) * | 2010-08-23 | 2012-03-01 | 株式会社日本製鋼所 | 半導体デバイスの製造方法および製造装置 |
JP2012044121A (ja) * | 2010-08-23 | 2012-03-01 | Japan Steel Works Ltd:The | 半導体デバイスの製造方法および製造装置 |
JP2013030797A (ja) * | 2012-10-03 | 2013-02-07 | Japan Steel Works Ltd:The | 半導体デバイスの製造方法および製造装置 |
US9219141B2 (en) | 2013-07-10 | 2015-12-22 | Fuji Electric Co., Ltd. | Super junction MOSFET, method of manufacturing the same, and complex semiconductor device |
US9711634B2 (en) | 2013-09-18 | 2017-07-18 | Fuji Electric Co., Ltd. | Semiconductor device including a super junction MOSFET |
US9954078B2 (en) | 2013-09-18 | 2018-04-24 | Fuji Electric Co., Ltd. | Method for manufacturing a semiconductor device having a super junction MOSFET |
US9911733B2 (en) | 2014-11-17 | 2018-03-06 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
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US7517777B2 (en) | 2009-04-14 |
JP5087828B2 (ja) | 2012-12-05 |
US20070048982A1 (en) | 2007-03-01 |
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