JP2007049175A - Cmosイメージセンサー及びその製造方法 - Google Patents
Cmosイメージセンサー及びその製造方法 Download PDFInfo
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- JP2007049175A JP2007049175A JP2006250298A JP2006250298A JP2007049175A JP 2007049175 A JP2007049175 A JP 2007049175A JP 2006250298 A JP2006250298 A JP 2006250298A JP 2006250298 A JP2006250298 A JP 2006250298A JP 2007049175 A JP2007049175 A JP 2007049175A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 9
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 9
- 230000000295 complement effect Effects 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 238000011161 development Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】イメージセンサーは、フォトダイオードと各種のトランジスタとが形成された下部層と、前記下部層上に形成されたパッド絶縁層と、前記パッド絶縁層上に形成されるマイクロレンズであって、非平坦的な表面を有してなる第1絶縁層と、ドーム形状を形成すべく、第1絶縁層における突出した部分の上面及び側面を被覆する第2絶縁層と、を含んでいるような上記マイクロレンズと、前記マイクロレンズ上に形成される平坦化層と、前記平坦化層上に形成されるカラーフィルタと、を備えている。
【選択図】図3
Description
21 パッド絶縁層
22 第1絶縁層
23 第2絶縁層
24 マイクロレンズ
25 平坦化層
26 カラーフィルタ
Claims (6)
- 相補型金属酸化膜半導体(CMOS)のイメージセンサーを製造する方法であって、
フォトダイオードと各種のトランジスタとが形成された下部層上に、パッド絶縁層を形成する段階と、
前記パッド絶縁層上に、非平坦的な表面を有してなる第1絶縁層を形成する段階と、
高密度プラズマ蒸着工程を用いて、前記第1絶縁層上に第2絶縁層を蒸着する段階と、
前記第2絶縁層を追加的に蒸着して、第1絶縁層の非平坦的な表面における突出した部分にかぶさるように、ドーム形状を形成する段階と、
第2絶縁層をエッチバックして、第2絶縁層が、第1絶縁層における突出した部分の上面及び側面を被覆するドーム形状になるようにすることで、第1絶縁層における突出した部分と該部分を被覆する第2絶縁層とから構成されるマイクロレンズを形成する段階と、
を備えていることを特徴とするCMOSイメージセンサーの製造方法。 - 前記エッチバックする段階は、20〜200sccmのArと、5〜20sccmのC4F8と、30〜50sccmのCH3Fと、20〜50sccmのO2とからなる混合ガス雰囲気下において、300Wの上部バイアス、50〜150Wの範囲の下部バイアス、100〜200mTorrの範囲の圧力の条件下において実行されることを特徴とする請求項1に記載のCMOSイメージセンサーの製造方法。
- 前記パッド絶縁層上に、非平坦的な面を有してなる第1絶縁層を形成する段階が、
パッド絶縁層上に第1絶縁層を蒸着する段階と、
前記第1絶縁層上にフォトレジストを塗布し、これを露光及び現像工程によってパターニングする段階と、
前記パターニングしたフォトレジストをマスクとして使用して、第1絶縁層をエッチングする段階であって、完全にはエッチングせず、下層に形成されているパッド絶縁層が露出することがないように、所定の厚さの第1絶縁層を残すような上記エッチングする段階と、
を備えていることを特徴とする請求項1に記載のCMOSイメージセンサーの製造方法。 - 前記第1絶縁層は、窒化物層から形成されていることを特徴とする請求項1に記載のCMOSイメージセンサーの製造方法。
- 前記第2絶縁層は、酸化物層から形成され、前記第2絶縁層の追加的な蒸着工程には、O3蒸着工程を用いることを特徴とする請求項1に記載のCMOSイメージセンサーの製造方法。
- 上記製造方法が、さらに、
前記マイクロレンズを形成した後に、その全面に平坦化層を形成する段階と、
前記平坦化層上にカラーフィルタを形成する段階と、
を備えていることを特徴とする請求項1に記載のCMOSイメージセンサーの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040055106A KR100617065B1 (ko) | 2004-07-15 | 2004-07-15 | 씨모스 이미지 센서의 제조방법 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004376939A Division JP3992714B2 (ja) | 2004-07-15 | 2004-12-27 | Cmosイメージセンサー及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007049175A true JP2007049175A (ja) | 2007-02-22 |
JP4674302B2 JP4674302B2 (ja) | 2011-04-20 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2004376939A Expired - Fee Related JP3992714B2 (ja) | 2004-07-15 | 2004-12-27 | Cmosイメージセンサー及びその製造方法 |
JP2006250298A Expired - Fee Related JP4674302B2 (ja) | 2004-07-15 | 2006-09-15 | Cmosイメージセンサー及びその製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004376939A Expired - Fee Related JP3992714B2 (ja) | 2004-07-15 | 2004-12-27 | Cmosイメージセンサー及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7253018B2 (ja) |
JP (2) | JP3992714B2 (ja) |
KR (1) | KR100617065B1 (ja) |
DE (1) | DE102004062972A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009049973A (ja) * | 2007-08-17 | 2009-03-05 | Samsung Electro-Mechanics Co Ltd | Cmosイメージセンサパッケージ |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005217454A (ja) * | 2004-01-27 | 2005-08-11 | Sanyo Electric Co Ltd | 固体撮像装置 |
KR100685881B1 (ko) * | 2004-06-22 | 2007-02-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
US7648851B2 (en) * | 2006-03-06 | 2010-01-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating backside illuminated image sensor |
KR100760922B1 (ko) * | 2006-07-31 | 2007-09-21 | 동부일렉트로닉스 주식회사 | 실리콘 산화막을 이용한 씨모스 이미지 센서의마이크로렌즈 및 그 제조방법 |
KR100802305B1 (ko) * | 2006-12-27 | 2008-02-11 | 동부일렉트로닉스 주식회사 | 이미지 센서 제조방법 |
KR100871553B1 (ko) * | 2007-03-14 | 2008-12-01 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
US20080237761A1 (en) * | 2007-04-02 | 2008-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for enhancing light sensitivity for backside illumination image sensor |
KR100872988B1 (ko) * | 2007-08-02 | 2008-12-08 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
KR100882732B1 (ko) * | 2007-10-22 | 2009-02-06 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
KR101338354B1 (ko) * | 2007-12-28 | 2013-12-16 | 광주과학기술원 | 마이크로렌즈의 제조방법 |
TWI413244B (zh) * | 2008-07-04 | 2013-10-21 | United Microelectronics Corp | 影像感測器及其製造方法 |
CN102592984B (zh) * | 2012-03-09 | 2016-12-14 | 上海华虹宏力半导体制造有限公司 | 图像传感器顶层刻蚀方法以及图像传感器 |
FR3009889B1 (fr) * | 2013-08-23 | 2016-12-23 | Commissariat Energie Atomique | Photodiode a haut rendement quantique |
FR3009888B1 (fr) | 2013-08-23 | 2015-09-18 | Commissariat Energie Atomique | Photodiode spad a haut rendement quantique |
KR102498582B1 (ko) | 2018-02-26 | 2023-02-14 | 에스케이하이닉스 주식회사 | 파티션 패턴들을 가진 이미지 센서 |
CN109951929A (zh) * | 2019-04-29 | 2019-06-28 | 珠海纳金科技有限公司 | 一种手动光控装置 |
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JPH05335533A (ja) * | 1992-05-27 | 1993-12-17 | Olympus Optical Co Ltd | 固体撮像装置の製造方法 |
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JP2003204050A (ja) * | 2002-01-08 | 2003-07-18 | Canon Inc | 固体撮像装置 |
JP2004079608A (ja) * | 2002-08-12 | 2004-03-11 | Sanyo Electric Co Ltd | 固体撮像装置および固体撮像装置の製造方法 |
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2004
- 2004-07-15 KR KR1020040055106A patent/KR100617065B1/ko not_active IP Right Cessation
- 2004-12-27 JP JP2004376939A patent/JP3992714B2/ja not_active Expired - Fee Related
- 2004-12-28 US US11/022,827 patent/US7253018B2/en not_active Expired - Fee Related
- 2004-12-28 DE DE102004062972A patent/DE102004062972A1/de not_active Withdrawn
-
2006
- 2006-09-15 JP JP2006250298A patent/JP4674302B2/ja not_active Expired - Fee Related
- 2006-10-19 US US11/583,037 patent/US7598554B2/en not_active Expired - Fee Related
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JPH05335533A (ja) * | 1992-05-27 | 1993-12-17 | Olympus Optical Co Ltd | 固体撮像装置の製造方法 |
JPH06118224A (ja) * | 1992-10-08 | 1994-04-28 | Matsushita Electron Corp | 固体撮像装置のガラスフィルタ |
JPH0990104A (ja) * | 1995-09-25 | 1997-04-04 | Sony Corp | 光学部品およびその製造方法 |
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JP2009049973A (ja) * | 2007-08-17 | 2009-03-05 | Samsung Electro-Mechanics Co Ltd | Cmosイメージセンサパッケージ |
Also Published As
Publication number | Publication date |
---|---|
US7598554B2 (en) | 2009-10-06 |
US20070034982A1 (en) | 2007-02-15 |
KR100617065B1 (ko) | 2006-08-30 |
JP3992714B2 (ja) | 2007-10-17 |
US7253018B2 (en) | 2007-08-07 |
US20060012001A1 (en) | 2006-01-19 |
JP4674302B2 (ja) | 2011-04-20 |
KR20060006201A (ko) | 2006-01-19 |
JP2006032896A (ja) | 2006-02-02 |
DE102004062972A1 (de) | 2006-02-16 |
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