JP2006517350A - 低電圧nmos型静電気放電クランプ - Google Patents
低電圧nmos型静電気放電クランプ Download PDFInfo
- Publication number
- JP2006517350A JP2006517350A JP2006503295A JP2006503295A JP2006517350A JP 2006517350 A JP2006517350 A JP 2006517350A JP 2006503295 A JP2006503295 A JP 2006503295A JP 2006503295 A JP2006503295 A JP 2006503295A JP 2006517350 A JP2006517350 A JP 2006517350A
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- transistor
- source
- well
- electrode extraction
- clamp
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- 238000000605 extraction Methods 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 7
- 230000006870 function Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
- H01L27/0277—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base of said parasitic bipolar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
Description
の第1不純物領域、ボディを制御する第1不純物領域に隣接する第1電極取出し部、ウェル内の第2不純物領域、ソースを画定する第2不純物領域に隣接する第2電極取出し部、ウェルに隣接する誘電体層、ゲートを画定する誘電体層に隣接する第3電極取出し部、ウェル内の第3不純物領域、ドレインを画定する第3不純物領域に隣接する第4電極取出し部、及び第1電極取出し部と第2電極取出し部との間に接続される抵抗素子を含む。
−pウェル連結型(resistor p−well tied:RPWT)トランジスタ201とも呼ぶ。RPWTトランジスタ201はRPWTnチャネル金属酸化物半導体(NMOS)トランジスタまたは接合絶縁構造のRPWTNMOSトランジスタなどとすることができる。
第3電極取出し部314は第2電極取出し部311に隣接し、この取出し部311はゲート203をソース204に直接接続する。第4電極取出し部315は、ドレイン205を画定する第2n+領域308に隣接する。
かる。
Claims (2)
- 抵抗体及びpウェルを接続する構成のトランジスタであって、
基板と、
基板内の絶縁構造と、
絶縁構造に隣接する絶縁層と、
絶縁層及び絶縁構造に隣接するウェルと、
ウェル内の第1不純物領域と、
ボディを制御する第1不純物領域に隣接する第1電極取出し部と、
ウェル内の第2不純物領域と、
ソースを画定する第2不純物領域に隣接する第2電極取出し部と、
ウェルに隣接する誘電体層と、
ゲートを画定する誘電体層に隣接する第3電極取出し部と、
ウェル内の第3不純物領域と、
ドレインを画定する第3不純物領域に隣接する第4電極取出し部と、
第1電極取出し部と第2電極取出し部との間に接続される抵抗性素子とを備えるトランジスタ。 - 第1端子が入力/出力パッドに接続され、かつ第2端子が接地端子に接続される構成の、少なくとも2つの端子を有する回路を保護する静電気保護回路であって、静電気保護回路は、抵抗体及びpウェルを接続する構成のトランジスタを備え、このトランジスタは抵抗性素子、ボディ、ドレイン、ゲート、及びソースを有し、
ドレインは入力/出力パッドに接続され、
ソースは接地端子に接続され、
ゲートはソースに接続され、
抵抗性素子がボディをソースに接続する、静電気保護回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/361,469 US6844597B2 (en) | 2003-02-10 | 2003-02-10 | Low voltage NMOS-based electrostatic discharge clamp |
PCT/US2004/003094 WO2004073023A2 (en) | 2003-02-10 | 2004-02-04 | Low voltage nmos-based electrostatic discharge clamp |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006517350A true JP2006517350A (ja) | 2006-07-20 |
JP2006517350A5 JP2006517350A5 (ja) | 2007-03-22 |
JP4402109B2 JP4402109B2 (ja) | 2010-01-20 |
Family
ID=32824249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006503295A Expired - Lifetime JP4402109B2 (ja) | 2003-02-10 | 2004-02-04 | 低電圧nmos型静電気放電クランプ |
Country Status (7)
Country | Link |
---|---|
US (2) | US6844597B2 (ja) |
EP (1) | EP1595277A2 (ja) |
JP (1) | JP4402109B2 (ja) |
KR (1) | KR101006827B1 (ja) |
CN (1) | CN100416824C (ja) |
TW (1) | TWI322501B (ja) |
WO (1) | WO2004073023A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011519488A (ja) * | 2008-04-30 | 2011-07-07 | フリースケール セミコンダクター インコーポレイテッド | マルチ電圧静電気放電保護 |
WO2016051959A1 (ja) * | 2014-09-29 | 2016-04-07 | 日立オートモティブシステムズ株式会社 | 電子制御装置 |
JP7455016B2 (ja) | 2020-07-15 | 2024-03-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005311134A (ja) * | 2004-04-22 | 2005-11-04 | Nec Electronics Corp | 静電気放電保護素子 |
KR20060010979A (ko) * | 2004-07-29 | 2006-02-03 | 현대자동차주식회사 | 차량의 원격 감시 및 제어장치와 그것의 제어방법 |
US7122867B2 (en) * | 2004-11-19 | 2006-10-17 | United Microelectronics Corp. | Triple well structure and method for manufacturing the same |
DE102005000801A1 (de) * | 2005-01-05 | 2006-07-13 | Infineon Technologies Ag | Vorrichtung, Anordnung und System zum ESD-Schutz |
US7508038B1 (en) * | 2005-04-29 | 2009-03-24 | Zilog, Inc. | ESD protection transistor |
US7394133B1 (en) * | 2005-08-31 | 2008-07-01 | National Semiconductor Corporation | Dual direction ESD clamp based on snapback NMOS cell with embedded SCR |
US7268613B2 (en) * | 2005-10-31 | 2007-09-11 | International Business Machines Corporation | Transistor switch with integral body connection to prevent latchup |
JP2008218564A (ja) | 2007-03-01 | 2008-09-18 | Matsushita Electric Ind Co Ltd | 半導体装置 |
EP2150976A1 (en) * | 2007-04-27 | 2010-02-10 | Freescale Semiconductor, Inc. | Integrated circuit, electronic device and esd protection therefor |
CN101373770B (zh) * | 2007-08-20 | 2011-10-05 | 天津南大强芯半导体芯片设计有限公司 | 一种芯片衬底电位隔离电路及其应用和应用方法 |
US20100067155A1 (en) | 2008-09-15 | 2010-03-18 | Altera Corporation | Method and apparatus for enhancing the triggering of an electrostatic discharge protection device |
US8194370B2 (en) | 2008-11-25 | 2012-06-05 | Nuvoton Technology Corporation | Electrostatic discharge protection circuit and device |
US8399909B2 (en) | 2009-05-12 | 2013-03-19 | Osi Optoelectronics, Inc. | Tetra-lateral position sensing detector |
DE102011109596B4 (de) | 2011-08-05 | 2018-05-09 | Austriamicrosystems Ag | Schaltungsanordnung zum Schutz gegen elektrostatische Entladungen |
CN102646601B (zh) * | 2012-04-19 | 2016-09-28 | 北京燕东微电子有限公司 | 一种半导体结构及其制造方法 |
US9257463B2 (en) * | 2012-05-31 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned implantation process for forming junction isolation regions |
CN103280458B (zh) * | 2013-05-17 | 2015-07-29 | 电子科技大学 | 一种集成电路芯片esd防护用mos器件 |
CN103887194A (zh) * | 2013-05-23 | 2014-06-25 | 上海华力微电子有限公司 | 并行测试器件 |
KR101847227B1 (ko) | 2013-05-31 | 2018-04-10 | 매그나칩 반도체 유한회사 | Esd 트랜지스터 |
KR101975608B1 (ko) | 2013-06-12 | 2019-05-08 | 매그나칩 반도체 유한회사 | 고전압용 esd 트랜지스터 및 그 정전기 보호 회로 |
KR102098663B1 (ko) | 2013-10-11 | 2020-04-08 | 삼성전자주식회사 | 정전기 방전 보호 소자 |
CN104392995B (zh) * | 2014-10-30 | 2017-09-22 | 京东方科技集团股份有限公司 | 一种晶体管、驱动电路及其驱动方法、显示装置 |
US9997510B2 (en) * | 2015-09-09 | 2018-06-12 | Vanguard International Semiconductor Corporation | Semiconductor device layout structure |
US10680435B2 (en) * | 2016-04-26 | 2020-06-09 | Intersil Americas LLC | Enhanced electrostatic discharge (ESD) clamp |
US20200066709A1 (en) * | 2018-08-21 | 2020-02-27 | Mediatek Inc. | Semiconductor device having noise isolation between power regulator circuit and electrostatic discharge clamp circuit |
US10896953B2 (en) * | 2019-04-12 | 2021-01-19 | Globalfoundries Inc. | Diode structures |
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WO1994007436A1 (en) * | 1992-09-30 | 1994-04-14 | Vladimir Feingold | Intraocular lens insertion system |
US5563525A (en) * | 1995-02-13 | 1996-10-08 | Taiwan Semiconductor Manufacturing Company Ltd | ESD protection device with FET circuit |
US5686751A (en) * | 1996-06-28 | 1997-11-11 | Winbond Electronics Corp. | Electrostatic discharge protection circuit triggered by capacitive-coupling |
CN1051171C (zh) * | 1997-04-14 | 2000-04-05 | 世界先进积体电路股份有限公司 | 半导体器件的静电保护电路及其结构 |
US6013932A (en) * | 1998-01-07 | 2000-01-11 | Micron Technology, Inc. | Supply voltage reduction circuit for integrated circuit |
US6329692B1 (en) * | 1998-11-30 | 2001-12-11 | Motorola Inc. | Circuit and method for reducing parasitic bipolar effects during eletrostatic discharges |
US6329691B1 (en) * | 1999-12-13 | 2001-12-11 | Tower Semiconductor Ltd. | Device for protection of sensitive gate dielectrics of advanced non-volatile memory devices from damage due to plasma charging |
-
2003
- 2003-02-10 US US10/361,469 patent/US6844597B2/en not_active Expired - Lifetime
-
2004
- 2004-02-04 WO PCT/US2004/003094 patent/WO2004073023A2/en active Application Filing
- 2004-02-04 JP JP2006503295A patent/JP4402109B2/ja not_active Expired - Lifetime
- 2004-02-04 EP EP04708128A patent/EP1595277A2/en not_active Withdrawn
- 2004-02-04 CN CNB2004800038357A patent/CN100416824C/zh not_active Expired - Lifetime
- 2004-02-04 KR KR1020057014761A patent/KR101006827B1/ko active IP Right Grant
- 2004-02-06 TW TW093102773A patent/TWI322501B/zh not_active IP Right Cessation
- 2004-12-01 US US11/000,584 patent/US7288820B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011519488A (ja) * | 2008-04-30 | 2011-07-07 | フリースケール セミコンダクター インコーポレイテッド | マルチ電圧静電気放電保護 |
WO2016051959A1 (ja) * | 2014-09-29 | 2016-04-07 | 日立オートモティブシステムズ株式会社 | 電子制御装置 |
JP2016068650A (ja) * | 2014-09-29 | 2016-05-09 | 日立オートモティブシステムズ株式会社 | 電子制御装置 |
JP7455016B2 (ja) | 2020-07-15 | 2024-03-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20050107753A (ko) | 2005-11-15 |
JP4402109B2 (ja) | 2010-01-20 |
US20050093073A1 (en) | 2005-05-05 |
CN100416824C (zh) | 2008-09-03 |
KR101006827B1 (ko) | 2011-01-12 |
TWI322501B (en) | 2010-03-21 |
US7288820B2 (en) | 2007-10-30 |
WO2004073023A3 (en) | 2004-12-23 |
EP1595277A2 (en) | 2005-11-16 |
TW200417022A (en) | 2004-09-01 |
US6844597B2 (en) | 2005-01-18 |
WO2004073023A2 (en) | 2004-08-26 |
US20040155300A1 (en) | 2004-08-12 |
CN1748309A (zh) | 2006-03-15 |
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