JP2006351880A - 層間絶縁膜の形成方法及び層間絶縁膜の膜構造 - Google Patents
層間絶縁膜の形成方法及び層間絶縁膜の膜構造 Download PDFInfo
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- JP2006351880A JP2006351880A JP2005176877A JP2005176877A JP2006351880A JP 2006351880 A JP2006351880 A JP 2006351880A JP 2005176877 A JP2005176877 A JP 2005176877A JP 2005176877 A JP2005176877 A JP 2005176877A JP 2006351880 A JP2006351880 A JP 2006351880A
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- insulating film
- interlayer insulating
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- organic
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- 239000011229 interlayer Substances 0.000 title claims abstract description 184
- 238000000034 method Methods 0.000 title claims abstract description 68
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 45
- 239000002994 raw material Substances 0.000 claims abstract description 43
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 40
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 239000007789 gas Substances 0.000 claims description 36
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- 125000000962 organic group Chemical group 0.000 claims description 27
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 26
- 125000004432 carbon atom Chemical group C* 0.000 claims description 19
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
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- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 12
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 claims description 12
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- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 12
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- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 4
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- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 4
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- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 claims description 3
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical group [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims description 3
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 claims description 3
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 3
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- 239000001273 butane Substances 0.000 claims description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 2
- 239000001294 propane Substances 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 abstract description 43
- 229910001431 copper ion Inorganic materials 0.000 abstract description 43
- 238000009792 diffusion process Methods 0.000 abstract description 36
- 230000002265 prevention Effects 0.000 abstract description 7
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- 239000010703 silicon Substances 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- YQJPWWLJDNCSCN-UHFFFAOYSA-N 1,3-diphenyltetramethyldisiloxane Chemical compound C=1C=CC=CC=1[Si](C)(C)O[Si](C)(C)C1=CC=CC=C1 YQJPWWLJDNCSCN-UHFFFAOYSA-N 0.000 description 13
- -1 trimethylvinylsiloxane Chemical class 0.000 description 13
- DYZHZLQEGSYGDH-UHFFFAOYSA-N 7-bicyclo[4.2.0]octa-1,3,5-trienyl-[[7,8-bis(ethenyl)-7-bicyclo[4.2.0]octa-1,3,5-trienyl]oxy]silane Chemical compound C1C2=CC=CC=C2C1[SiH2]OC1(C=C)C2=CC=CC=C2C1C=C DYZHZLQEGSYGDH-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 7
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- 239000006200 vaporizer Substances 0.000 description 7
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- 238000004519 manufacturing process Methods 0.000 description 6
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- 238000010586 diagram Methods 0.000 description 5
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- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910007991 Si-N Inorganic materials 0.000 description 4
- 229910006294 Si—N Inorganic materials 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000005381 potential energy Methods 0.000 description 3
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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Abstract
【解決手段】 層間絶縁膜の形成方法は、酸素原子を含有しない有機シリコン化合物、及び酸素原子を含有する有機シリコン化合物を原料として用いて、プラズマCVD法により、基板上に層間絶縁膜を形成する。
【選択図】 図4
Description
以下、上述した本発明に係るプラズマCVD法を用いた層間絶縁膜の形成方法(1)を具体化する本発明の第1の実施形態に係る層間絶縁膜の形成方法について、図面を参照しながら説明する。
以下、上述した本発明に係るプラズマCVD法を用いた層間絶縁膜の形成方法(2)を具体化する本発明の第2の実施形態に係る層間絶縁膜の形成方法について、図面を参照しながら説明する。
以下、上述した本発明に係るプラズマCVD法を用いた層間絶縁膜の形成方法(3)を具体化する本発明の第3の実施形態に係る層間絶縁膜の形成方法について、図面を参照しながら説明する。
101 主鎖を構成していない有機分子部位
102 主鎖を構成している有機分子部位
1a、1e 第1のガス供給管
1b、1d 第2のガス供給管
1c 第3のガス供給管
2a 被処理基板
10a 第1の加圧容器
10b 第2の加圧容器
11a 第1の気化器
11b 第2の気化器
12 成膜チャンバー
12a 下部電極
12b 上部電極
12c 基板指示部
13 高周波電源
Claims (19)
- 基板上に層間絶縁膜を形成する層間絶縁膜の形成方法であって、
酸素原子を含有しない有機シリコン化合物、及び酸素原子を含有する有機シリコン化合物を原料として用いて、プラズマCVD法により、前記層間絶縁膜を形成する工程を備えることを特徴とする層間絶縁膜の形成方法。 - 前記層間絶縁膜を形成する工程は、添加ガスとして窒素よりなるガスを用いることを特徴とする請求項1に記載の層間絶縁膜の形成方法。
- 前記層間絶縁膜を形成する工程は、添加ガスとしてアンモニアよりなるガスを用いることを特徴とする請求項1に記載の層間絶縁膜の形成方法。
- 前記酸素原子を含有しない有機シリコン化合物は、モノメチルシラン、ジメチルシラン、トリメチルシラン、テトラメチルシラン、又はヘキサメチルジシランであることを特徴とする請求項1〜3のうちのいずれか1項に記載の層間絶縁膜の形成方法。
- 前記酸素原子を含有する有機シリコン化合物に含まれるシリコン原子に結合する有機基は、メチル基、エチル基、プロピル基、ブチル基(含シクロブチル基)、ペンチル基(含シクロペンチル基)、へキシル基(含シクロへキシル基)、ビニル基、ビニル基の誘導体、フェニル基、又はフェニル基の誘導体であることを特徴とする請求項1〜3のうちのいずれか1項に記載の層間絶縁膜の形成方法。
- 基板上に層間絶縁膜を形成する層間絶縁膜の形成方法であって、
酸素原子を含有しない有機化合物、及び酸素原子を含有する有機シリコン化合物を原料として用いて、プラズマCVD法により、前記層間絶縁膜を形成する工程を備えることを特徴とする層間絶縁膜の形成方法。 - 前記層間絶縁膜を形成する工程は、添加ガスとして窒素よりなるガスを用いることを特徴とする請求項6に記載の層間絶縁膜の形成方法。
- 前記層間絶縁膜を形成する工程は、添加ガスとしてアンモニアよりなるガスを用いることを特徴とする請求項6に記載の層間絶縁膜の形成方法。
- 前記酸素原子を含有しない有機化合物は、飽和炭化水素又は不飽和炭化水素であることを特徴とする請求項6〜8のうちのいずれか1項に記載の層間絶縁膜の形成方法。
- 前記飽和炭化水素は、メタン、エタン、プロパン、ブタン、ペンタン、ヘキサン、ヘプタン、オクタン、ノナン、デカン、又はこれらの異性体であることを特徴とする請求項6〜8のうちのいずれか1項に記載の層間絶縁膜の形成方法。
- 前記不飽和炭化水素は、炭素原子同士の二重結合を1つ以上で且つ3つ以下含んでいることを特徴とする請求項6〜8のうちのいずれか1項に記載の層間絶縁膜の形成方法。
- 前記酸素原子を含有する有機シリコン化合物に含まれるシリコン原子に結合する有機基は、メチル基、エチル基、プロピル基、ブチル基(含シクロブチル基)、ペンチル基(含シクロペンチル基)、へキシル基(含シクロへキシル基)、ビニル基、ビニル基の誘導体、フェニル基、又はフェニル基の誘導体であることを特徴とする請求項6〜8のうちのいずれか1項に記載の層間絶縁膜の形成方法。
- 基板上に層間絶縁膜を形成する層間絶縁膜の形成方法であって、
酸素原子を含有しない有機シリコン化合物、及び酸素原子を含有する有機化合物を原料として用いて、プラズマCVD法により、前記層間絶縁膜を形成する工程を備えることを特徴とする層間絶縁膜の形成方法。 - 前記層間絶縁膜を形成する工程は、添加ガスとして窒素よりなるガスを用いることを特徴とする請求項13に記載の層間絶縁膜の形成方法。
- 前記層間絶縁膜を形成する工程は、添加ガスとしてアンモニアよりなるガスを用いることを特徴とする請求項13に記載の層間絶縁膜の形成方法。
- 前記酸素原子を含有しない有機シリコン化合物は、モノメチルシラン、ジメチルシラン、トリメチルシラン、テトラメチルシラン、又はヘキサメチルジシランであることを特徴とする請求項13〜15のうちのいずれか1項に記載の層間絶縁膜の形成方法。
- 前記酸素原子を含有する有機化合物は、エーテル、エステル、アルコール、ケトン、又はカルボン酸誘導体であることを特徴とする請求項13〜15に記載の層間絶縁膜の形成方法。
- 炭素原子と水素原子とを主成分とする有機高分子中に、前記炭素原子の一部と結合する一方で酸素原子と結合していない第1のシリコン原子と、前記炭素原子の一部と結合すると共に前記酸素原子と結合している第2のシリコン原子とが混在していることを特徴とする層間絶縁膜の膜構造。
- 膜中に含まれる前記第1のシリコン原子及び前記第2のシリコン原子の原子数に対する前記炭素原子の原子数の比が1.5以上であることを特徴とする請求項18に記載の層間絶縁膜の膜構造。
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US11/453,871 US20060286815A1 (en) | 2005-06-16 | 2006-06-16 | Interlayer insulating film formation method and film structure of interlayer insulating film |
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JP2009129966A (ja) * | 2007-11-20 | 2009-06-11 | Fujitsu Microelectronics Ltd | 成膜方法、成膜装置及び半導体装置の製造方法 |
JP2018147976A (ja) * | 2017-03-03 | 2018-09-20 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
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US8261690B2 (en) * | 2006-07-14 | 2012-09-11 | Georgia Tech Research Corporation | In-situ flux measurement devices, methods, and systems |
JP2011166106A (ja) * | 2010-01-13 | 2011-08-25 | Renesas Electronics Corp | 半導体装置の製造方法及び半導体装置 |
JP2011252085A (ja) | 2010-06-02 | 2011-12-15 | Honda Motor Co Ltd | プラズマ成膜方法 |
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US6841256B2 (en) * | 1999-06-07 | 2005-01-11 | Honeywell International Inc. | Low dielectric constant polyorganosilicon materials generated from polycarbosilanes |
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US7307343B2 (en) * | 2002-05-30 | 2007-12-11 | Air Products And Chemicals, Inc. | Low dielectric materials and methods for making same |
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JP2009129966A (ja) * | 2007-11-20 | 2009-06-11 | Fujitsu Microelectronics Ltd | 成膜方法、成膜装置及び半導体装置の製造方法 |
JP2018147976A (ja) * | 2017-03-03 | 2018-09-20 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
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