JP2006323481A - 半導体装置の製造方法 - Google Patents
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Abstract
【解決手段】 位置合わせ用の認識マーク11が表示された基板12の一方の主面全体に、認識マーク11が透視可能な接着層13を形成する第1の工程と、接着層13の上に、認識マーク11を基準に位置合わせして半導体素子14を載置する第2の工程と、半導体素子14が載置された接着層13の全面を覆うように保護層15を形成する第3の工程と、基板12と保護層15とを接着層13を介して接合する第4の工程とを含む半導体装置の製造方法とする。
【選択図】 図1
Description
図1は、本発明の半導体装置の製造工程の一例を示す工程図であり、ハッチング部分のみが断面を示す。先ず、図1Aに示すように、位置合わせ用の認識マーク11が表示された基板12の一方の主面全体に、認識マーク11が透視可能な接着層13を形成する。接着層13を認識マーク11が透視可能な材料で形成することにより、基板12の全面に接着層13を形成しても認識マーク11を認識できる。
図2は、本発明の半導体装置の製造工程の他の一例を示す工程図であり、ハッチング部分のみが断面を示す。本実施形態は、基板上に複数の半導体素子を載置し、保護層の形成に2層フィルムを用い、最後に基板を個片に切断する点で実施形態1と相違するが、その他は実施形態1とほぼ同様である。従って、実施形態1と共通する一部の説明は省略する。
下記のとおり、実施形態2と同様にして、ICカードを作製した。
下記のとおり、図4に示した従来の工程と同様にして、ICカードを作製した。
前記接着層の上に、前記認識マークを基準に位置合わせして半導体素子を載置する第2の工程と、
前記半導体素子が載置された前記接着層の全面を覆うように保護層を形成する第3の工程と、
前記基板と前記保護層とを前記接着層を介して接合する第4の工程とを含むことを特徴とする半導体装置の製造方法。
前記第4の工程において、前記接着層を加熱して硬化させることにより、前記基板と前記保護層とを接合する付記1に記載の半導体装置の製造方法。
前記第2の工程において、前記半導体素子を加熱した後に前記接着層の上に載置することにより、前記半導体素子の少なくとも下部に位置する前記接着層を加熱して硬化させ、前記半導体素子を前記基板上に固定し、
前記第4の工程において、未硬化の前記接着層を加熱して硬化させることにより、前記基板と前記保護層とを接合する付記1に記載の半導体装置の製造方法。
前記第4の工程において、前記基板と前記保護層とを前記接着層を介して接合し、前記基板と前記保護層との間に複数の前記半導体素子が配置された半導体装置前駆体を形成し、
さらに、前記半導体装置前駆体を、前記半導体素子が少なくとも1個含まれるように個片に切断する第5の工程を含む付記1に記載の半導体装置の製造方法。
12、22、102 基板
13、23 接着層
14、24 半導体素子
15、25、106 保護層
16 半導体装置
26 剥離層
27 2層フィルム
28 プレス
29、30 ロール
103 第1の接着剤
104 ICチップ
105 第2の接着剤
107 ICカード
Claims (5)
- 位置合わせ用の認識マークが表示された基板の一方の主面全体に、前記認識マークが透視可能な接着層を形成する第1の工程と、
前記接着層の上に、前記認識マークを基準に位置合わせして半導体素子を載置する第2の工程と、
前記半導体素子が載置された前記接着層の全面を覆うように保護層を形成する第3の工程と、
前記基板と前記保護層とを前記接着層を介して接合する第4の工程とを含むことを特徴とする半導体装置の製造方法。 - 前記接着層は、熱硬化性樹脂を含み、
前記第4の工程において、前記接着層を加熱して硬化させることにより、前記基板と前記保護層とを接合する請求項1に記載の半導体装置の製造方法。 - 前記接着層は、熱硬化性樹脂を含み、
前記第2の工程において、前記半導体素子を加熱した後に前記接着層の上に載置することにより、前記半導体素子の少なくとも下部に位置する前記接着層を加熱して硬化させ、前記半導体素子を前記基板上に固定し、
前記第4の工程において、未硬化の前記接着層を加熱して硬化させることにより、前記基板と前記保護層とを接合する請求項1に記載の半導体装置の製造方法。 - 前記第2の工程において、前記半導体素子を前記接着層の上に複数載置し、
前記第4の工程において、前記基板と前記保護層とを前記接着層を介して接合し、前記基板と前記保護層との間に複数の前記半導体素子が配置された半導体装置前駆体を形成し、
さらに、前記半導体装置前駆体を、前記半導体素子が少なくとも1個含まれるように個片に切断する第5の工程を含む請求項1に記載の半導体装置の製造方法。 - 前記第3の工程において、剥離層と前記保護層とからなる2層フィルムを、前記保護層が前記接着層に対向するように配置し、前記2層フィルムを前記接着層に対して押圧することにより、前記保護層を前記接着層上に配置した後、前記保護層と前記剥離層とを分離する請求項1に記載の半導体装置の製造方法。
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