JP2006312575A - シリコンウェーハおよびその製造方法 - Google Patents
シリコンウェーハおよびその製造方法 Download PDFInfo
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- JP2006312575A JP2006312575A JP2005203865A JP2005203865A JP2006312575A JP 2006312575 A JP2006312575 A JP 2006312575A JP 2005203865 A JP2005203865 A JP 2005203865A JP 2005203865 A JP2005203865 A JP 2005203865A JP 2006312575 A JP2006312575 A JP 2006312575A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 67
- 239000010703 silicon Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 152
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 99
- 239000001257 hydrogen Substances 0.000 claims abstract description 95
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 95
- 230000007547 defect Effects 0.000 claims abstract description 80
- 239000012298 atmosphere Substances 0.000 claims abstract description 53
- 239000001301 oxygen Substances 0.000 claims abstract description 49
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 48
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 47
- 125000004429 atom Chemical group 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 10
- 238000002109 crystal growth method Methods 0.000 claims description 6
- 238000004151 rapid thermal annealing Methods 0.000 claims description 5
- 239000000155 melt Substances 0.000 abstract description 15
- 239000002244 precipitate Substances 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 230000001276 controlling effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 89
- 238000009826 distribution Methods 0.000 description 26
- 238000001556 precipitation Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 238000007711 solidification Methods 0.000 description 12
- 230000008023 solidification Effects 0.000 description 12
- 238000001816 cooling Methods 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004854 X-ray topography Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000003325 tomography Methods 0.000 description 2
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 description 1
- -1 H 2 O Chemical compound 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
【解決手段】CZ法(チョクラルスキー法)によるシリコン単結晶育成において、育成装置内の不活性雰囲気中の水素分圧を40Pa以上400Pa以下とし、単結晶直胴部をGrown−in欠陥が存在しない無欠陥領域として育成する。その場合、BMDを多く生じさせるには水素分圧を40Pa以上160Pa以下とし、BMDを少なくするには水素分圧を160Paを超え400Pa以下とし、さらに融液中の酸素濃度も制御する。
【選択図】なし
Description
LH=kPH (kは係数) (1)
すなわち、雰囲気中の水素分圧PHに比例するという関係が成り立つはずである。
PH=P0X/100 (2)
である。したがって、装置内の雰囲気ガス圧が異なる場合、水素分圧を一定、すなわち融液中の水素濃度を一定にするには、(2)式にしたがって混入する水素の体積比率を変えなければならない。
水素原子含有物質の気体として水素ガスを添加する場合には、市販の水素ガスボンベ、水素ガス貯蔵タンク、水素吸蔵合金を充填したタンク等から、専用の配管を通じて装置内の不活性雰囲気に供給することができる。
図6に模式的に示した断面構造の装置を用いて、育成実験をおこなった。この図において、熱遮蔽体7は、黒鉛で外殻を作り、内部に黒鉛フェルトを充填した構造であるが、るつぼに入る部分の外径が480mm、最下端における最小内径Sは270mm、半径方向の幅Wは105mmで、内面は下端部から始まる逆円錐台面とし、その垂直方向に対する傾きは21°であった。るつぼ1の内径は550mmのものを用い、熱遮蔽体7の下端の融液面からの高さHは、60mmとした。
実施例1にて用いた育成装置により、酸素濃度が1.24×1018atoms/cm3と、1.07×1018atoms/cm3との2種の単結晶について、表2に示す条件にて引き上げ速度および雰囲気中の水素分圧を変えて、無欠陥ウェーハを得る単結晶の育成をおこなった。
1b:るつぼ支持軸、 2:ヒーター
3:シリコン溶融液、 4:引き上げ軸
5:シードチャック、 6:単結晶
7:熱遮蔽体
Claims (10)
- チョクラルスキー法によるシリコン単結晶の育成において、育成装置内の不活性雰囲気中の水素分圧を40Pa以上、400Pa以下とし、単結晶直胴部をGrown−in欠陥が存在しない無欠陥領域として育成することを特徴とするシリコン単結晶育成方法。
- チョクラルスキー法によるシリコン単結晶の育成において、育成装置内の不活性雰囲気中の水素分圧を40Pa以上、160Pa以下とし、単結晶直胴部を空孔優勢無欠陥領域として育成することを特徴とするシリコン単結晶育成方法。
- チョクラルスキー法によるシリコン単結晶の育成において、育成装置内の不活性雰囲気中の水素分圧を160Paを超え、400Pa以下とし、単結晶直胴部を格子間シリコン優勢無欠陥領域として育成することを特徴とするシリコン単結晶育成方法。
- チョクラルスキー法によるシリコン単結晶の育成において、単結晶の直胴部を育成する期間だけ育成装置内の不活性雰囲気中に水素原子含有物質の気体を添加することを特徴とする請求項1、2または3に記載のシリコン単結晶育成方法。
- 請求項1、2、3または4に記載の方法で育成された単結晶から採取されたことを特徴とするシリコンウェーハ。
- 酸素濃度が1.2×1018atoms/cm3(ASTM F121,1979)以上であることを特徴とする請求項5に記載のシリコンウェーハ。
- 請求項1、2、3または4に記載の方法で育成された単結晶から採取され、ラピッドサーマルアニーリング処理(RTA処理)が施されたことを特徴とするシリコンウェーハ。
- 請求項5に記載のシリコンウェーハをベースウェーハに用いたことを特徴とするSIMOX型基板。
- 請求項5に記載のシリコンウェーハを活性層側のウェーハとした貼り合わせ型のSOI基板。
- 酸素濃度が1.0×1018atoms/cm3(ASTM F121,1979)以下であることを特徴とする請求項8または9に記載の基板。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
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JP2005203865A JP4742711B2 (ja) | 2005-04-08 | 2005-07-13 | シリコン単結晶育成方法 |
EP10002649.1A EP2194168B1 (en) | 2005-04-08 | 2005-09-14 | Silicon single crystal growing method. |
CN2005800494091A CN101155950B (zh) | 2005-04-08 | 2005-09-14 | 硅单晶的培育方法、以及硅晶片和使用该硅晶片的soi衬底 |
PCT/JP2005/016961 WO2006112053A1 (ja) | 2005-04-08 | 2005-09-14 | シリコン単結晶の育成方法、並びにシリコンウェーハおよびそれを用いたsoi基板 |
KR1020077022928A KR100916055B1 (ko) | 2005-04-08 | 2005-09-14 | 실리콘 단결정의 육성 방법 및 실리콘 웨이퍼 및 그것을이용한 soi 기판 |
EP05783521.7A EP1892323B1 (en) | 2005-04-08 | 2005-09-14 | Silicon single crystal growing method |
TW094134050A TW200636098A (en) | 2005-04-08 | 2005-09-29 | Method for growing silicon single crystal, and silicon wafer and SOI substrate using the same |
US11/393,892 US20060225639A1 (en) | 2005-04-08 | 2006-03-31 | Method for growing silicon single crystal, and silicon wafer |
US12/453,578 US20090293799A1 (en) | 2005-04-08 | 2009-05-15 | Method for growing silicon single crystal, and silicon wafer |
US12/453,579 US20090261301A1 (en) | 2005-04-08 | 2009-05-15 | Method for growing silicon single crystal, and silicon wafer |
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JP2005112649 | 2005-04-08 | ||
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JP2005203865A JP4742711B2 (ja) | 2005-04-08 | 2005-07-13 | シリコン単結晶育成方法 |
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JP4742711B2 JP4742711B2 (ja) | 2011-08-10 |
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US (1) | US20090293799A1 (ja) |
EP (2) | EP1892323B1 (ja) |
JP (1) | JP4742711B2 (ja) |
KR (1) | KR100916055B1 (ja) |
CN (1) | CN101155950B (ja) |
TW (1) | TW200636098A (ja) |
WO (1) | WO2006112053A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008022747A1 (de) | 2007-05-23 | 2008-11-27 | Sumco Corp. | Silicium-Einkristall-Wafer und Verfahren zur Herstellung |
WO2009025336A1 (ja) * | 2007-08-21 | 2009-02-26 | Sumco Corporation | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
WO2009025339A1 (ja) * | 2007-08-21 | 2009-02-26 | Sumco Corporation | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
WO2009025338A1 (ja) * | 2007-08-21 | 2009-02-26 | Sumco Corporation | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
WO2009025340A1 (ja) * | 2007-08-21 | 2009-02-26 | Sumco Corporation | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
WO2009025341A1 (ja) * | 2007-08-21 | 2009-02-26 | Sumco Corporation | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
JP2009049256A (ja) * | 2007-08-22 | 2009-03-05 | Sumco Corp | シリコンウェーハ及びその製造方法 |
JP2011020882A (ja) * | 2009-07-15 | 2011-02-03 | Sumco Corp | シリコン単結晶の育成方法 |
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JP4806975B2 (ja) * | 2005-06-20 | 2011-11-02 | 株式会社Sumco | シリコン単結晶の育成方法 |
US7819972B2 (en) | 2005-06-20 | 2010-10-26 | Sumco Corporation | Method for growing silicon single crystal and method for manufacturing silicon wafer |
JP4806974B2 (ja) | 2005-06-20 | 2011-11-02 | 株式会社Sumco | シリコン単結晶育成方法 |
FR2937797B1 (fr) * | 2008-10-28 | 2010-12-24 | S O I Tec Silicon On Insulator Tech | Procede de fabrication et de traitement d'une structure de type semi-conducteur sur isolant, permettant de deplacer des dislocations, et structure correspondante |
US9773265B2 (en) * | 2009-04-21 | 2017-09-26 | Perk Dynamics, LLC | Method and system for remote orders |
JP6260100B2 (ja) * | 2013-04-03 | 2018-01-17 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
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DE102008022747A1 (de) | 2007-05-23 | 2008-11-27 | Sumco Corp. | Silicium-Einkristall-Wafer und Verfahren zur Herstellung |
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JP5359874B2 (ja) * | 2007-08-21 | 2013-12-04 | 株式会社Sumco | Igbt用シリコン単結晶ウェーハの製造方法 |
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JP2011020882A (ja) * | 2009-07-15 | 2011-02-03 | Sumco Corp | シリコン単結晶の育成方法 |
Also Published As
Publication number | Publication date |
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CN101155950B (zh) | 2012-07-04 |
WO2006112053A1 (ja) | 2006-10-26 |
TW200636098A (en) | 2006-10-16 |
EP1892323A1 (en) | 2008-02-27 |
KR100916055B1 (ko) | 2009-09-08 |
EP2194168B1 (en) | 2016-05-11 |
KR20070113279A (ko) | 2007-11-28 |
EP1892323A4 (en) | 2009-07-01 |
CN101155950A (zh) | 2008-04-02 |
JP4742711B2 (ja) | 2011-08-10 |
TWI320434B (ja) | 2010-02-11 |
EP2194168A1 (en) | 2010-06-09 |
EP1892323B1 (en) | 2016-05-11 |
US20090293799A1 (en) | 2009-12-03 |
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