JP2006251491A - フォトレジスト剥離液組成物及びフォトレジストの剥離方法 - Google Patents
フォトレジスト剥離液組成物及びフォトレジストの剥離方法 Download PDFInfo
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- JP2006251491A JP2006251491A JP2005069221A JP2005069221A JP2006251491A JP 2006251491 A JP2006251491 A JP 2006251491A JP 2005069221 A JP2005069221 A JP 2005069221A JP 2005069221 A JP2005069221 A JP 2005069221A JP 2006251491 A JP2006251491 A JP 2006251491A
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- Prior art keywords
- photoresist
- photoresist stripping
- film
- stripping
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 description 1
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- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- LXOFYPKXCSULTL-UHFFFAOYSA-N 2,4,7,9-tetramethyldec-5-yne-4,7-diol Chemical compound CC(C)CC(C)(O)C#CC(C)(O)CC(C)C LXOFYPKXCSULTL-UHFFFAOYSA-N 0.000 description 1
- IHJUECRFYCQBMW-UHFFFAOYSA-N 2,5-dimethylhex-3-yne-2,5-diol Chemical compound CC(C)(O)C#CC(C)(C)O IHJUECRFYCQBMW-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
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- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
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- VZPBTNPWFOMXPI-UHFFFAOYSA-N 3,7-dimethyloct-1-yn-3-ol Chemical compound CC(C)CCCC(C)(O)C#C VZPBTNPWFOMXPI-UHFFFAOYSA-N 0.000 description 1
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- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- PDUBPTGFYGTEQY-UHFFFAOYSA-N F.CC(C)(O)C Chemical compound F.CC(C)(O)C PDUBPTGFYGTEQY-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
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- 240000007711 Peperomia pellucida Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 239000012670 alkaline solution Substances 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- OBESRABRARNZJB-UHFFFAOYSA-N aminomethanesulfonic acid Chemical compound NCS(O)(=O)=O OBESRABRARNZJB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
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- 239000003990 capacitor Substances 0.000 description 1
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- 238000004140 cleaning Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
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- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
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- LZCVHHFGMKXLBU-UHFFFAOYSA-N ethanamine;hydrofluoride Chemical compound [F-].CC[NH3+] LZCVHHFGMKXLBU-UHFFFAOYSA-N 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 125000005677 ethinylene group Chemical group [*:2]C#C[*:1] 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- KDOWHHULNTXTNS-UHFFFAOYSA-N hex-3-yne-2,5-diol Chemical compound CC(O)C#CC(C)O KDOWHHULNTXTNS-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- RRSMHQNLDRCPQG-UHFFFAOYSA-N methanamine;hydrofluoride Chemical compound [F-].[NH3+]C RRSMHQNLDRCPQG-UHFFFAOYSA-N 0.000 description 1
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 description 1
- QXLPXWSKPNOQLE-UHFFFAOYSA-N methylpentynol Chemical compound CCC(C)(O)C#C QXLPXWSKPNOQLE-UHFFFAOYSA-N 0.000 description 1
- GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical class [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229940044654 phenolsulfonic acid Drugs 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- DSISTIFLMZXDDI-UHFFFAOYSA-N propan-1-amine;hydrofluoride Chemical compound F.CCCN DSISTIFLMZXDDI-UHFFFAOYSA-N 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- KZVLNAGYSAKYMG-UHFFFAOYSA-N pyridine-2-sulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=N1 KZVLNAGYSAKYMG-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
- G03F7/343—Lamination or delamination methods or apparatus for photolitographic photosensitive material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
- H01L2924/35121—Peeling or delaminating
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決すべき課題】 半導体回路素子の製造工程においてドライエッチング後に残留するフォトレジスト及びフォトレジスト変質層等の剥離性に優れ、かつ新しい配線材料や層間絶縁膜材料等に対してもアタックがないフォトレジスト剥離液組成物及びフォトレジスト及びフォトレジスト変質層剥離方法を提供する。
【解決手段】 アセチレンアルコール化合物及び有機スルホン酸化合物のうちの少なくとも1種と、多価アルコール及びその誘導体のうちの少なくとも1種とを含有する、フォトレジスト剥離液組成物を用いる。
Description
I.フォトレジスト剥離液組成物の調製
フォトレジスト剥離液組成物を構成する表1〜表3に示す成分を加え、均一に混合することにより、各フォトレジスト剥離液組成物を調製した。
1)評価試験1
(実施例1〜15及び比較例1〜21:フォトレジスト変質層及び側壁保護堆積膜の厚さ(T)がそれぞれT≦5nmの場合)
シリコンウェハ上にTaをバリアメタルに用いたCuダマシン配線、層間絶縁膜(low−k膜)等を順次成膜し、層間絶縁膜上に塗布、露光、現像したKrFフォトレジストをマスクとしてドライエッチングを行いビアホールを形成した。このウェハをN−メチル−2−ピロリリジノンに50℃、10分間浸漬処理し、超純水による流水リンス処理、及び乾燥を行い、フォトレジスト評価用ウェハを得た(同一の処理を行ったウェハをN−メチル−2−ピロリリジノン中に50℃、10分間浸漬処理し、超純水による流水リンス処理、及び乾燥を行った後、ウェハの断面を電子顕微鏡により観察したところ、フォトレジスト表面及びビアホール側壁にフォトレジスト変質層及び側壁保護堆積膜の薄い膜(5nm以下)が生成していた。)。
(実施例16〜21及び比較例22〜31:フォトレジスト変質層及び側壁保護堆積膜の厚さ(T)がそれぞれ5nm<T≦10nmの場合)
シリコンウェハ上にTaをバリアメタルに用いたCuダマシン配線、層間絶縁膜(low−k膜)等を順次成膜し、層間絶縁膜上に塗布、露光、現像したKrFフォトレジストをマスクとしてドライエッチングを行いビアホールを形成した。このウェハをN−メチル−2−ピロリリジノンに50℃、10分間浸漬処理し、超純水にて流水リンス処理、乾燥を行いフォトレジスト評価用ウェハを得た(同一の処理を行ったウェハをN−メチル−2−ピロリリジノンに50℃、10分間浸漬処理し、超純水による流水リンス処理、及び乾燥を行い、ウェハの断面を電子顕微鏡により観察したところ、フォトレジスト表面及びビアホール側壁に厚さが5nmを超え、10nm以下のフォトレジスト変質層又は側壁保護堆積膜膜が生成していた。)。
(実施例22〜28及び比較例32〜36:フォトレジスト変質層及び側壁保護堆積膜の厚さ(T)がそれぞれ10nm<Tの場合)
シリコンウェハ上にTaをバリアメタルに用いたCuダマシン配線、層間絶縁膜(low−k膜)等を順次成膜し、層間絶縁膜上に塗布、露光、現像したArFレジストをマスクとしてドライエッチングを行いビアホールを形成した。このウェハをN−メチル−2−ピロリリジノンに50℃、10分間浸漬処理し、超純水による流水リンス処理、及び乾燥を行いフォトレジスト評価用ウェハを得た(同一の処理を行ったウェハをN−メチル−2−ピロリリジノンに50℃、10分間浸漬処理し、超純水による流水リンス処理、及び乾燥を行い、ウェハの断面を電子顕微鏡により観察したところ、フォトレジスト表面及びビアホール側壁にフォトレジスト変質層又は側壁保護堆積膜膜が10nmより厚く生成していた。)。
Claims (11)
- アセチレンアルコール化合物及び有機スルホン酸化合物のうちの少なくとも1種と、多価アルコール及びその誘導体のうちの少なくとも1種とを含有する、フォトレジスト剥離液組成物。
- さらにフッ素化合物及び第四級水酸化アンモニウム塩のうちの少なくとも1種を含有する、請求項1に記載のフォトレジスト剥離液組成物。
- アセチレンアルコール化合物が2−ブチン−1,4−ジオールである、請求項1又は2に記載のフォトレジスト剥離液組成物。
- 有機スルホン酸化合物がメタンスルホン酸である、請求項1〜3のいずれかに記載のフォトレジスト剥離液組成物。
- フッ素化合物がフッ化アンモニウムである、請求項1〜4のいずれかに記載のフォトレジスト剥離液組成物。
- 水の含有量が組成物に対し10質量%以下である、請求項1〜5のいずれかに記載のフォトレジスト剥離液組成物。
- 配線材料として銅又は層間絶縁膜として低誘電率膜を有する半導体回路素子の製造に用いる、請求項1〜6のいずれかに記載のフォトレジスト剥離液組成物。
- 請求項1〜7のいずれかに記載のフォトレジスト剥離液組成物を用いる、フォトレジストの剥離方法。
- アセチレンアルコール化合物及び有機スルホン酸化合物のうちの少なくとも1種を含有する第1液による処理と、多価アルコール及びその誘導体のうちの少なくとも1種を含有する第2液による処理とを含む、フォトレジストの剥離方法。
- 第2液にフッ素化合物及び第四級水酸化アンモニウム塩のうちの少なくとも1種を含有する、請求項9に記載のフォトレジストの剥離方法。
- 配線材料として銅又は層間絶縁膜として低誘電率膜を有する半導体回路素子の製造に用いる、請求項9又は10に記載のフォトレジストの剥離方法。
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SG200601448A SG126052A1 (en) | 2005-03-11 | 2006-03-06 | Composition for photoresist stripping solution andprocess of photoresist stripping |
EP06004791A EP1701217A3 (en) | 2005-03-11 | 2006-03-09 | Composition for photoresist stripping solution and process of photoresist stripping |
US11/371,444 US7816312B2 (en) | 2005-03-11 | 2006-03-09 | Composition for photoresist stripping solution and process of photoresist stripping |
TW095108208A TW200639594A (en) | 2005-03-11 | 2006-03-10 | Composition for photoresist stripping solution and process of photoresist stripping |
CN2006100547502A CN1831654B (zh) | 2005-03-11 | 2006-03-10 | 光致抗蚀剂剥离液组合物以及光致抗蚀剂的剥离方法 |
KR1020060022758A KR20060098333A (ko) | 2005-03-11 | 2006-03-10 | 포토레지스트 박리액 조성물 및 포토레지스트의 박리방법 |
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- 2006-03-09 EP EP06004791A patent/EP1701217A3/en not_active Withdrawn
- 2006-03-09 US US11/371,444 patent/US7816312B2/en not_active Expired - Fee Related
- 2006-03-10 KR KR1020060022758A patent/KR20060098333A/ko not_active Application Discontinuation
- 2006-03-10 CN CN2006100547502A patent/CN1831654B/zh not_active Expired - Fee Related
- 2006-03-10 TW TW095108208A patent/TW200639594A/zh unknown
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WO2010016350A1 (ja) * | 2008-08-05 | 2010-02-11 | 三菱瓦斯化学株式会社 | 残渣剥離液組成物およびそれを用いた半導体素子の洗浄方法 |
JP5370358B2 (ja) * | 2008-08-05 | 2013-12-18 | 三菱瓦斯化学株式会社 | 残渣剥離液組成物およびそれを用いた半導体素子の洗浄方法 |
KR20110088496A (ko) | 2008-09-19 | 2011-08-03 | 미츠비시 가스 가가쿠 가부시키가이샤 | 구리 배선 표면 보호액 및 반도체 회로의 제조 방법 |
JP2019121639A (ja) * | 2017-12-28 | 2019-07-22 | 東京応化工業株式会社 | リワーク方法、及び酸性洗浄液 |
JP7150433B2 (ja) | 2017-12-28 | 2022-10-11 | 東京応化工業株式会社 | リワーク方法、及び酸性洗浄液 |
Also Published As
Publication number | Publication date |
---|---|
TW200639594A (en) | 2006-11-16 |
US20060205623A1 (en) | 2006-09-14 |
EP1701217A2 (en) | 2006-09-13 |
CN1831654A (zh) | 2006-09-13 |
CN1831654B (zh) | 2012-07-18 |
JP4988165B2 (ja) | 2012-08-01 |
EP1701217A3 (en) | 2007-01-03 |
KR20060098333A (ko) | 2006-09-18 |
US7816312B2 (en) | 2010-10-19 |
SG126052A1 (en) | 2006-10-30 |
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