JP2006237074A - 窒化物系半導体素子の製造方法及び窒化物系半導体素子 - Google Patents
窒化物系半導体素子の製造方法及び窒化物系半導体素子 Download PDFInfo
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Abstract
【解決手段】窒化物系半導体素子の製造方法は、成長用基板1上に、少なくとも1層以上の窒化物系半導体素子層5を形成する工程と、支持基板13の一方の主面上に、支持基板13より熱膨張係数の大きい材料からなる調整層14を形成する工程と、窒化物系半導体素子層5上に、支持基板13の他方の主面を、接合する工程と、接合された窒化物系半導体素子層5及び支持基板13から成長用基板1を分離する工程とを含む。
【選択図】図1
Description
図2は、第1の実施の形態に係る窒化物系半導体レーザの製造方法の概略を説明するための図である。第1の実施の形態では、図2(a)に示すように、支持基板113の一方の主面上に、支持基板113より熱膨張係数の大きい材料からなる調整層114を形成する。そして、GaN基板101上の窒化物系半導体素子層105と支持基板113とを、融着層112を介して接合する。窒化物系半導体素子層105には、所定の間隔で開口するマスク層103が含まれる。このように、支持基板113より熱膨張係数が大きい材料からなる調整層114を形成することにより、支持基板113は窒化物系半導体素子層105側に凸状に湾曲する。一方、GaN基板101は、その表面がほぼ平坦か、窒化物系半導体素子層105側に凹状に湾曲する。そして、図2(b)に示すように、融着層112を介して、支持基板113と、窒化物系半導体素子層105とを接合する。
図8は、第2の実施の形態に係る窒化物系半導体発光ダイオードの製造方法の概略を説明するための図である。第2の実施の形態では、図8(a)に示すように、支持基板213の一方の主面上に、支持基板213より熱膨張係数の大きい材料からなる調整層214を形成する。そして、サファイア基板201上の窒化物系半導体素子層205と支持基板213とを、融着層212を介して接合する。窒化物系半導体素子層205には、所定の間隔で開口するマスク層203が含まれる。このように、支持基板213より熱膨張係数が大きい材料からなる調整層214を形成することにより、支持基板213は窒化物系半導体素子層205側に凸状に湾曲する。一方、サファイア基板201は、その表面が窒化物系半導体素子層205側に凸状に湾曲する。そして、図8(b)に示すように、融着層212を介して、支持基板213と、窒化物系半導体素子層205とを接合する。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
3、103、203…マスク層
5、105、205…窒化物系半導体素子層
12、112、212…融着層
13、113、213…支持基板
14、114、214…調整層
102、202…バッファ層
104、204…下地層
105、205…n型コンタクト層
106、206…n型クラッド層
107…発光層
108…p型クラッド層
109…p型コンタクト層
110…電流ブロック層
111…p側電極
115…n側電極
207…活性層
Claims (8)
- 第1の基板上に、少なくとも1層以上の窒化物系半導体素子層を形成する工程と、
第2の基板の一方の主面上に、該第2の基板より熱膨張係数の大きい材料からなる調整層を形成する工程と、
前記窒化物系半導体素子層上に、前記第2の基板の他方の主面を、融着層を介して接合する工程と、
接合された前記窒化物系半導体素子層及び前記第2の基板から前記第1の基板を分離する工程と
を含むことを特徴とする窒化物系半導体素子の製造方法。 - 前記調整層は、前記融着層と同種の金属からなり、前記調整層の膜厚は、前記融着層の膜厚より大きいことを特徴とする請求項1に記載の窒化物系半導体素子の製造方法。
- 前記第2の基板は、金属と該金属の酸化物との複合体を主成分とし、
前記調整層は、金、スズ、ニッケル、チタン、あるいはそれらの合金からなることを特徴とする請求項1に記載の窒化物系半導体素子の製造方法。 - 前記窒化物系半導体素子層は、所定の間隔で開口するマスク層を含むことを特徴とする請求項1〜3のいずれか1項に記載の窒化物系半導体素子の製造方法。
- 前記マスク層は、複数の熱膨張係数の異なる膜を積層して形成されることを特徴とする請求項4に記載の窒化物系半導体素子の製造方法。
- 前記窒化物系半導体素子層の一端には、第1の電極が設けられ、前記窒化物系半導体素子層の他端には、第2の電極が設けられることを特徴とする請求項1〜5のいずれか1項に記載の窒化物系半導体素子の製造方法。
- 前記分離する工程は、前記第1の基板を刷動させることにより行うことを特徴とする請求項1〜6のいずれか1項に記載の窒化物系半導体素子の製造方法。
- 第1の基板上に、少なくとも1層以上の窒化物系半導体素子層を形成する工程と、前記窒化物系半導体素子層上に、前記第2の基板の一方の主面を、融着層を介して接合する工程と、接合された前記窒化物系半導体素子層及び前記第2の基板から前記第1の基板を分離する工程とによって製造される窒化物系半導体素子であって、
前記第2の基板の他方の主面上に、該第2の基板とは熱膨張係数の異なる材料からなる調整層を備えることを特徴とする窒化物系半導体素子。
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JP2009253240A (ja) * | 2008-04-11 | 2009-10-29 | Semiconductor Energy Lab Co Ltd | 半導体基板の作製方法 |
JP2009277944A (ja) * | 2008-05-15 | 2009-11-26 | Toyoda Gosei Co Ltd | 接合体の製造方法及び発光装置の製造方法 |
JP2012518916A (ja) * | 2009-02-25 | 2012-08-16 | エルジー イノテック カンパニー リミテッド | 発光素子の製造方法 |
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WO2020095610A1 (ja) * | 2018-11-06 | 2020-05-14 | 信越半導体株式会社 | 発光素子用半導体基板の製造方法及び発光素子の製造方法 |
JP2020077710A (ja) * | 2018-11-06 | 2020-05-21 | 信越半導体株式会社 | 発光素子用半導体基板の製造方法及び発光素子の製造方法 |
JP7468182B2 (ja) | 2020-06-22 | 2024-04-16 | 日本電気硝子株式会社 | 膜付き基板、サブマウント、及び光学デバイス |
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