JP2006202909A - 微小構造体を有する半導体装置および微小構造体の製造方法 - Google Patents
微小構造体を有する半導体装置および微小構造体の製造方法 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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- B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/019—Bonding or gluing multiple substrate layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
- G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49004—Electrical device making including measuring or testing of device or component part
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- Measuring Fluid Pressure (AREA)
Abstract
【解決手段】 微小構造体のチップCPが複数形成されたウェハ100に対して接着層15を用いてダミーウェハ10と貼り合わせる。そして、MEMSデバイス1は、カッティングしたダミーウェハ10をチップCPの台座としてハウジング部材110と接着させることにより、ハウジング部材110を用いてパッケージする際の下からの応力等をダミーウェハ10で吸収する。
【選択図】 図1
Description
技術調査レポート第3号(経済産業省産業技術環境局技術調査室 製造産業局産業機械課 発行 平成15年3月28日)
Claims (13)
- 各々が、可動部を有する微小構造体を含む複数のセンサチップが形成された第1ウェハと、
前記第1ウェハと接着され、ダイシング後のパッケージの際に各前記センサチップの台座として用いられる第2ウェハとを備える、微小構造体を有する半導体装置。 - 前記第1ウェハと前記第2のウェハとの間において、前記第1ウェハと前記第2ウェハとを接着するための接着層が設けられ、
前記接着層は、前記第2ウェハ上の領域において、前記第1ウェハの各前記センサチップの前記可動部を形成する領域に対向する領域を除く領域に形成される、請求項1記載の微小構造体を有する半導体装置。 - 前記ダイシング後のパッケージの際に、前記第1および第2ウェハの各前記センサチップおよび各前記センサチップの台座を収納するためのハウジングと、
前記ハウジングに収納するために、各前記センサチップの台座と前記ハウジングとを接着するための接着層とを備え、
前記接着層は、各前記センサチップの台座と前記ハウジングとの接着面積が各前記センサチップの台座の面積よりも小さくなるように形成される、請求項1記載の微小構造体を有する半導体装置。 - 前記第1および第2ウェハは、シリコンウェハに相当する、請求項1記載の微小構造体を有する半導体装置。
- 各前記センサチップは、加速度センサ、角速度センサ、圧力センサおよびマイクロフォンの少なくとも1つに相当する、請求項1記載の微小構造体を有する半導体装置。
- 前記複数のセンサチップの特性を評価するウェハテストは、前記第1ウェハと前記第2ウェハとが接着された状態で行なわれる、請求項1記載の微小構造体を有する半導体装置。
- 前記第1および第2ウェハは、搬送手段により前記ウェハテストを実行するテスタに搬送され、
前記搬送手段は、前記第2ウェハに対して真空吸着を実行する、請求項6記載の微小構造体を有する半導体装置。 - 第1のウェハに複数のセンサチップを形成するステップと、
前記第1のウェハと、パッケージの際に各前記センサチップの台座として用いられる第2のウェハとを第1の接着層を用いて接着するステップと、
接着された前記第1および第2の半導体基板とをダイシングにより各々のセンサチップに分離するステップとを備える、微小構造体の製造方法。 - ダイシング後の前記パッケージの際に、前記第1および第2ウェハの各前記センサチップおよび各前記センサチップの台座を収納するハウジングに収納するために、各前記センサチップの台座と前記ハウジングとを第2の接着層を用いて接着するステップとをさらに備える、請求項8記載の微小構造体の製造方法。
- 前記第2の接着層は、各前記センサチップの台座と前記ハウジングとの接着面積が各前記センサチップの台座の面積よりも小さくなるように形成される、請求項9記載の微小構造体の製造方法。
- 前記第1の接着層は、前記第2ウェハ上の領域において、前記第1ウェハの各前記センサチップの前記可動部を形成する領域に対向する領域を除く領域に形成される、請求項8記載の微小構造体の製造方法。
- 前記第1ウェハと前記第2ウェハとが接着された状態で、前記複数のセンサチップの特性を評価するウェハテストを実行するステップをさらに備える、請求項8記載の微小構造体の製造方法。
- 前記ウェハテストを実行するステップは、前記第2ウェハに対して真空吸着を実行してテスタに対して搬送するステップを含む、請求項12記載の微小構造体の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005011850A JP4578251B2 (ja) | 2005-01-19 | 2005-01-19 | 微小構造体を有する半導体装置および微小構造体の製造方法 |
TW095101615A TW200642090A (en) | 2005-01-19 | 2006-01-16 | Semiconductor device having minute structure and method of manufacturing minute structure |
PCT/JP2006/300615 WO2006077867A1 (ja) | 2005-01-19 | 2006-01-18 | 微小構造体を有する半導体装置および微小構造体の製造方法 |
US11/826,647 US20070262306A1 (en) | 2005-01-19 | 2007-07-17 | Semiconductor device having microstructure and method of manufacturing microstructure |
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JP2005011850A JP4578251B2 (ja) | 2005-01-19 | 2005-01-19 | 微小構造体を有する半導体装置および微小構造体の製造方法 |
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JP2006202909A true JP2006202909A (ja) | 2006-08-03 |
JP2006202909A5 JP2006202909A5 (ja) | 2007-12-13 |
JP4578251B2 JP4578251B2 (ja) | 2010-11-10 |
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JP2005011850A Expired - Fee Related JP4578251B2 (ja) | 2005-01-19 | 2005-01-19 | 微小構造体を有する半導体装置および微小構造体の製造方法 |
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US (1) | US20070262306A1 (ja) |
JP (1) | JP4578251B2 (ja) |
TW (1) | TW200642090A (ja) |
WO (1) | WO2006077867A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008053929A1 (fr) * | 2006-11-02 | 2008-05-08 | Tokyo Electron Limited | Appareil permettant d'inspecter une structure fine, procédé permettant d'inspecter une structure fine et appareil de support de substrat |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5547147B2 (ja) * | 2011-09-13 | 2014-07-09 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
CN108622847A (zh) * | 2018-05-03 | 2018-10-09 | 河北美泰电子科技有限公司 | Mems传感器的封装方法及封装结构 |
Citations (5)
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JPS6254969A (ja) * | 1985-09-03 | 1987-03-10 | Mitsubishi Electric Corp | 半導体圧力センサの製造方法 |
JPS63118628A (ja) * | 1986-11-06 | 1988-05-23 | Sumitomo Electric Ind Ltd | 半導体圧力センサのブリツジ回路調整方法 |
JPH0595046A (ja) * | 1991-10-02 | 1993-04-16 | Matsushita Electric Works Ltd | センサー形成済基板のダイシング方法 |
JP2003315196A (ja) * | 2002-04-25 | 2003-11-06 | Denso Corp | 圧力センサの製造方法およびその製造方法に用いる測定装置 |
JP2006003101A (ja) * | 2004-06-15 | 2006-01-05 | Canon Inc | 半導体圧力センサの特性評価装置および特性評価方法 |
Family Cites Families (1)
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JP2002005951A (ja) * | 2000-06-26 | 2002-01-09 | Denso Corp | 半導体力学量センサ及びその製造方法 |
-
2005
- 2005-01-19 JP JP2005011850A patent/JP4578251B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-16 TW TW095101615A patent/TW200642090A/zh unknown
- 2006-01-18 WO PCT/JP2006/300615 patent/WO2006077867A1/ja not_active Application Discontinuation
-
2007
- 2007-07-17 US US11/826,647 patent/US20070262306A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6254969A (ja) * | 1985-09-03 | 1987-03-10 | Mitsubishi Electric Corp | 半導体圧力センサの製造方法 |
JPS63118628A (ja) * | 1986-11-06 | 1988-05-23 | Sumitomo Electric Ind Ltd | 半導体圧力センサのブリツジ回路調整方法 |
JPH0595046A (ja) * | 1991-10-02 | 1993-04-16 | Matsushita Electric Works Ltd | センサー形成済基板のダイシング方法 |
JP2003315196A (ja) * | 2002-04-25 | 2003-11-06 | Denso Corp | 圧力センサの製造方法およびその製造方法に用いる測定装置 |
JP2006003101A (ja) * | 2004-06-15 | 2006-01-05 | Canon Inc | 半導体圧力センサの特性評価装置および特性評価方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008053929A1 (fr) * | 2006-11-02 | 2008-05-08 | Tokyo Electron Limited | Appareil permettant d'inspecter une structure fine, procédé permettant d'inspecter une structure fine et appareil de support de substrat |
JPWO2008053929A1 (ja) * | 2006-11-02 | 2010-02-25 | 東京エレクトロン株式会社 | 微小構造体の検査装置、微小構造体の検査方法及び基板保持装置 |
KR101011491B1 (ko) | 2006-11-02 | 2011-01-31 | 도쿄엘렉트론가부시키가이샤 | 미소 구조체의 검사 장치, 미소 구조체의 검사 방법 및 기판 유지 장치 |
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Publication number | Publication date |
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JP4578251B2 (ja) | 2010-11-10 |
US20070262306A1 (en) | 2007-11-15 |
WO2006077867A1 (ja) | 2006-07-27 |
TW200642090A (en) | 2006-12-01 |
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