JP2006202786A - 固体撮像装置及びその製造方法 - Google Patents
固体撮像装置及びその製造方法 Download PDFInfo
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- JP2006202786A JP2006202786A JP2005009678A JP2005009678A JP2006202786A JP 2006202786 A JP2006202786 A JP 2006202786A JP 2005009678 A JP2005009678 A JP 2005009678A JP 2005009678 A JP2005009678 A JP 2005009678A JP 2006202786 A JP2006202786 A JP 2006202786A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000007787 solid Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000003860 storage Methods 0.000 claims abstract description 50
- 239000012535 impurity Substances 0.000 claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- 238000005468 ion implantation Methods 0.000 description 18
- 238000009826 distribution Methods 0.000 description 10
- 238000002513 implantation Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14643—Photodiode arrays; MOS imagers
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- H01L27/14632—Wafer-level processed structures
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
【解決手段】 p型の半導体基板120上に設けられたゲート電極126と、ゲート電極126下方に一部が位置するように半導体基板120内に設けられ、光電変換して得られた信号電荷を蓄積するn型の信号蓄積領域121と、ゲート電極126を挟んで信号蓄積領域121と反対側に位置するように半導体基板120内に設けられたn型のドレイン領域123と、ドレイン領域123下方に位置するように半導体基板120内に設けられ、信号蓄積領域121側の端部がドレイン領域123の端部下方よりも信号蓄積領域121側に位置し、半導体基板120よりも高い不純物濃度を有するp型のパンチスルーストッパ領域125とを備える。
【選択図】 図2
Description
固体撮像装置は、n×m個の単位セル200が2次元的に配置されたイメージエリア201と、信号処理部205に単位セル200の信号電圧を列単位で伝達する第1の垂直信号線202と、単位セル200を行単位で選択する垂直シフトレジスタ203と、負荷トランジスタ群204と、第1の垂直信号線202を介して伝達された信号電圧を保持し、ノイズをカットする信号処理部205と、単位セル200を列単位で選択する水平シフトレジスタ206と、信号処理部205から出力された信号電圧を出力アンプ208に伝達する水平信号線207と、出力アンプ208とから構成される。
101、201 イメージエリア
111、211 フォトダイオード
112、212 読み出しトランジスタ
113、216 FD部
120、221 半導体基板
121、222 信号蓄積領域
122、223 表面シールド領域
123、224 ドレイン領域
124 読み出し制御領域
124a 第1読み出し制御領域
124b 第2読み出し制御領域
124c 第3読み出し制御領域
125、226 パンチスルーストッパ領域
126、225 ゲート電極
130、131、132、133 フォトレジスト
202 第1の垂直信号線
203 垂直シフトレジスタ
204 負荷トランジスタ群
205 信号処理部
206 水平シフトレジスタ
207 水平信号線
208 出力アンプ
213 増幅トランジスタ
214 リセットトランジスタ
215 垂直選択トランジスタ
230、231 電位
240 ポテンシャルギャップ
Claims (5)
- 第1導電型の半導体基板上に設けられたゲート電極と、
前記半導体基板内において、前記ゲート電極下方に一部が位置し、光電変換して得られた信号電荷を蓄積する第2導電型の信号蓄積領域と、
前記半導体基板内において、前記ゲート電極に対して前記信号蓄積領域と反対側に位置する第2導電型のドレイン領域と、
前記半導体基板内において、前記ドレイン領域下方に位置し、前記信号蓄積領域側の端部が前記ドレイン領域の前記信号蓄積領域側の端部よりも前記信号蓄積領域側に位置し、前記半導体基板よりも高い不純物濃度を有する第1導電型のパンチスルーストッパ領域と
を備える固体撮像装置。 - 前記ドレイン領域の前記信号蓄積領域側の端部は、下方に向かうにつれて前記信号蓄積領域から離れる
請求項1に記載の固体撮像装置。 - 前記パンチスルーストッパ領域の前記信号蓄積領域側の端部は、前記ゲート電極下方に位置する
請求項2に記載の固体撮像装置。 - 前記固体撮像装置は、さらに、
前記半導体基板内において、前記ゲート電極下方に一部が位置し、前記半導体基板よりも高く前記パンチスルーストッパ領域よりも低い不純物濃度を有する第1導電型の読み出し制御領域を備え、
前記ドレイン領域及びパンチスルーストッパ領域は、前記読み出し制御領域内に設けられる
請求項3に記載の固体撮像装置。 - 第1導電型の半導体基板上にゲート電極を形成するゲート電極形成工程と、
前記ゲート電極をマスクにして前記半導体基板主面に対して斜め方向に第2導電型の不純物を注入して前記半導体基板内に第2導電型のドレイン領域を形成するドレイン領域形成工程と、
前記ゲート電極をマスクにして前記半導体基板主面に対して垂直に第1導電型の不純物を注入して前記半導体基板内に第1導電型のパンチスルーストッパ領域を形成するパンチスルーストッパ領域形成工程と
を含む固体撮像装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005009678A JP4340240B2 (ja) | 2005-01-17 | 2005-01-17 | 固体撮像装置 |
TW094137147A TW200627634A (en) | 2005-01-17 | 2005-10-24 | Solid-state imaging device and manufacturing method thereof |
US11/263,973 US7317218B2 (en) | 2005-01-17 | 2005-11-02 | Solid-state imaging device having a punch-through stopper region positioned closer to a signal accumulation region than is an end of the drain region |
KR1020050115178A KR20060083851A (ko) | 2005-01-17 | 2005-11-30 | 고체촬상장치 및 그 제조방법 |
CNA2006100057876A CN1808721A (zh) | 2005-01-17 | 2006-01-06 | 固态成像器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005009678A JP4340240B2 (ja) | 2005-01-17 | 2005-01-17 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006202786A true JP2006202786A (ja) | 2006-08-03 |
JP4340240B2 JP4340240B2 (ja) | 2009-10-07 |
Family
ID=36682985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005009678A Expired - Fee Related JP4340240B2 (ja) | 2005-01-17 | 2005-01-17 | 固体撮像装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7317218B2 (ja) |
JP (1) | JP4340240B2 (ja) |
KR (1) | KR20060083851A (ja) |
CN (1) | CN1808721A (ja) |
TW (1) | TW200627634A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016143870A (ja) * | 2015-02-05 | 2016-08-08 | キヤノン株式会社 | 固体撮像装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070102927A (ko) * | 2006-04-17 | 2007-10-22 | 마쯔시다덴기산교 가부시키가이샤 | 고체촬상장치 및 그 제조방법 |
US7763913B2 (en) * | 2006-12-12 | 2010-07-27 | Aptina Imaging Corporation | Imaging method, apparatus, and system providing improved imager quantum efficiency |
JP2008277787A (ja) * | 2007-03-30 | 2008-11-13 | Nec Electronics Corp | 電荷転送装置 |
JP2011253962A (ja) * | 2010-06-02 | 2011-12-15 | Sony Corp | 固体撮像素子の製造方法、固体撮像素子、撮像装置 |
US9608069B1 (en) | 2016-04-13 | 2017-03-28 | Intenational Business Machines Corporation | Self aligned epitaxial based punch through control |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3802249B2 (ja) | 1998-11-17 | 2006-07-26 | 株式会社東芝 | 固体撮像装置 |
JP3688980B2 (ja) * | 2000-06-28 | 2005-08-31 | 株式会社東芝 | Mos型固体撮像装置及びその製造方法 |
-
2005
- 2005-01-17 JP JP2005009678A patent/JP4340240B2/ja not_active Expired - Fee Related
- 2005-10-24 TW TW094137147A patent/TW200627634A/zh unknown
- 2005-11-02 US US11/263,973 patent/US7317218B2/en active Active
- 2005-11-30 KR KR1020050115178A patent/KR20060083851A/ko not_active Application Discontinuation
-
2006
- 2006-01-06 CN CNA2006100057876A patent/CN1808721A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016143870A (ja) * | 2015-02-05 | 2016-08-08 | キヤノン株式会社 | 固体撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4340240B2 (ja) | 2009-10-07 |
US20060157756A1 (en) | 2006-07-20 |
US7317218B2 (en) | 2008-01-08 |
KR20060083851A (ko) | 2006-07-21 |
CN1808721A (zh) | 2006-07-26 |
TW200627634A (en) | 2006-08-01 |
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