TW200627634A - Solid-state imaging device and manufacturing method thereof - Google Patents

Solid-state imaging device and manufacturing method thereof

Info

Publication number
TW200627634A
TW200627634A TW094137147A TW94137147A TW200627634A TW 200627634 A TW200627634 A TW 200627634A TW 094137147 A TW094137147 A TW 094137147A TW 94137147 A TW94137147 A TW 94137147A TW 200627634 A TW200627634 A TW 200627634A
Authority
TW
Taiwan
Prior art keywords
region
semiconductor substrate
type
solid
imaging device
Prior art date
Application number
TW094137147A
Other languages
English (en)
Inventor
Syouji Tanaka
Ryohei Miyagawa
Kazunari Koga
Tatsuya Hirata
Hiroki Nagasaki
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of TW200627634A publication Critical patent/TW200627634A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW094137147A 2005-01-17 2005-10-24 Solid-state imaging device and manufacturing method thereof TW200627634A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005009678A JP4340240B2 (ja) 2005-01-17 2005-01-17 固体撮像装置

Publications (1)

Publication Number Publication Date
TW200627634A true TW200627634A (en) 2006-08-01

Family

ID=36682985

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094137147A TW200627634A (en) 2005-01-17 2005-10-24 Solid-state imaging device and manufacturing method thereof

Country Status (5)

Country Link
US (1) US7317218B2 (zh)
JP (1) JP4340240B2 (zh)
KR (1) KR20060083851A (zh)
CN (1) CN1808721A (zh)
TW (1) TW200627634A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070102927A (ko) * 2006-04-17 2007-10-22 마쯔시다덴기산교 가부시키가이샤 고체촬상장치 및 그 제조방법
US7763913B2 (en) * 2006-12-12 2010-07-27 Aptina Imaging Corporation Imaging method, apparatus, and system providing improved imager quantum efficiency
JP2008277787A (ja) * 2007-03-30 2008-11-13 Nec Electronics Corp 電荷転送装置
JP2011253962A (ja) * 2010-06-02 2011-12-15 Sony Corp 固体撮像素子の製造方法、固体撮像素子、撮像装置
JP6541361B2 (ja) * 2015-02-05 2019-07-10 キヤノン株式会社 固体撮像装置
US9608069B1 (en) 2016-04-13 2017-03-28 Intenational Business Machines Corporation Self aligned epitaxial based punch through control

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3802249B2 (ja) 1998-11-17 2006-07-26 株式会社東芝 固体撮像装置
JP3688980B2 (ja) * 2000-06-28 2005-08-31 株式会社東芝 Ｍｏｓ型固体撮像装置及びその製造方法

Also Published As

Publication number Publication date
JP2006202786A (ja) 2006-08-03
JP4340240B2 (ja) 2009-10-07
US20060157756A1 (en) 2006-07-20
US7317218B2 (en) 2008-01-08
KR20060083851A (ko) 2006-07-21
CN1808721A (zh) 2006-07-26

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