JP2006179708A - 化合物半導体スイッチ回路装置 - Google Patents
化合物半導体スイッチ回路装置 Download PDFInfo
- Publication number
- JP2006179708A JP2006179708A JP2004371833A JP2004371833A JP2006179708A JP 2006179708 A JP2006179708 A JP 2006179708A JP 2004371833 A JP2004371833 A JP 2004371833A JP 2004371833 A JP2004371833 A JP 2004371833A JP 2006179708 A JP2006179708 A JP 2006179708A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- circuit device
- compound semiconductor
- fet
- impurity region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 150000001875 compounds Chemical class 0.000 title claims description 30
- 239000012535 impurity Substances 0.000 claims description 98
- 230000001681 protective effect Effects 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 40
- 230000004888 barrier function Effects 0.000 claims description 24
- 230000015556 catabolic process Effects 0.000 abstract description 27
- 238000002955 isolation Methods 0.000 abstract description 26
- 230000003071 parasitic effect Effects 0.000 abstract description 10
- 230000006866 deterioration Effects 0.000 abstract description 4
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 72
- 239000002184 metal Substances 0.000 description 72
- 108091006146 Channels Proteins 0.000 description 45
- 101150050114 CTL1 gene Proteins 0.000 description 39
- 101150052401 slc44a1 gene Proteins 0.000 description 39
- 238000010586 diagram Methods 0.000 description 34
- 101150099461 CTL2 gene Proteins 0.000 description 24
- 101150116431 Slc44a2 gene Proteins 0.000 description 24
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 22
- 230000002093 peripheral effect Effects 0.000 description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 21
- 102100029952 Double-strand-break repair protein rad21 homolog Human genes 0.000 description 18
- 101100086368 Homo sapiens RAD21 gene Proteins 0.000 description 18
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 13
- 238000005468 ion implantation Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 239000013256 coordination polymer Substances 0.000 description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 6
- 230000000593 degrading effect Effects 0.000 description 6
- 101150059476 SLC44A3 gene Proteins 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】スイッチング素子と直近の保護素子間、および隣り合う保護素子間のコントロール抵抗に、高抵抗体を接続する。高周波信号のパスを遮断し、保護素子を接続して寄生容量が存在しても、高周波信号の漏れを防止できる。従って静電破壊電圧を向上し、且つアイソレーションの劣化を抑制できる。
【選択図】 図2
Description
11 基板
12 チャネル層
13 第1ソース電極
15 第2ソース電極
14 第1ドレイン電極
16 第2ドレイン電極
17 ゲート電極
18 ソース領域
19 ドレイン領域
20 ゲート金属層
30 パッド金属層
31 GaAs基板
32 バッファ層
33 電子供給層
34 スペーサ層
35 チャネル層
36 障壁層
37 キャップ層
40 InGaP層
50 絶縁化層
60 窒化膜
100 動作領域
101 リセス部
102 コンタクト部
120 ゲート配線
130 パッド配線
150 周辺不純物領域
200、200a、200b 保護素子
201 第1不純物領域
202 第2不純物領域
203 絶縁領域
312 チャネル層
315 ソース電極
316 ドレイン電極
317 ゲート電極
330 パッド
350 周辺不純物領域
HR11、HR12、HR21、HR22、HR31、HR32 高抵抗体
LR1、LR2、LR3 低抵抗体
IN 共通入力端子
Ctl1 第1制御端子
Ctl2 第2制御端子
Ctl3 第3制御端子
OUT1 第1出力端子
OUT2 第2出力端子
OUT3 第3出力端子
I 共通入力端子パッド
C1 第1制御端子パッド
C2 第2御端子パッド
C3 第3御端子パッド
O1 第1出力端子パッド
O2 第2出力端子パッド
O3 第3出力端子パッド
CR1 第1コントロール抵抗
CR2 第2コントロール抵抗
CR3 第3コントロール抵抗
F1 第1スイッチング素子
F2 第2スイッチング素子
F3 第3スイッチング素子
CP 接続点
Claims (14)
- 複数のスイッチング素子と、前記スイッチング素子のソースまたはドレインに共通で接続する共通入力端子と、前記スイッチング素子のドレインまたはソースにそれぞれ接続する複数の出力端子と、前記スイッチング素子のゲートにそれぞれ接続する複数の制御端子とを有する化合物半導体スイッチング回路装置であって、
前記スイッチング素子と、
前記各制御端子と該制御端子に対応する前記スイッチング素子とをそれぞれ接続する複数の接続手段と、
前記各端子となる複数のパッドと、
1つの前記接続手段と、前記共通入力端子間または前記出力端子間に接続され、第1不純物領域および第2不純物領域間に絶縁領域を配置した保護素子と、を化合物半導体基板に集積化し、
1つの前記接続手段は、前記保護素子の接続点と前記スイッチング素子の間に高抵抗体が直列に接続されることを特徴とする化合物半導体スイッチ回路装置。 - 複数のスイッチング素子と、前記スイッチング素子のソースまたはドレインに共通で接続する共通入力端子と、前記スイッチング素子のドレインまたはソースにそれぞれ接続する複数の出力端子と、前記スイッチング素子のゲートにそれぞれ接続する複数の制御端子とを有する化合物半導体スイッチング回路装置であって、
前記スイッチング素子と、
前記各制御端子と該制御端子に対応する前記スイッチング素子とをそれぞれ接続する複数の接続手段と、
前記各端子となる複数のパッドと、
1つの前記接続手段と前記共通入力端子間、および前記1つの接続手段と前記出力端子間にそれぞれ接続され、第1不純物領域および第2不純物領域間に絶縁領域を配置した保護素子と、を化合物半導体基板に集積化し、
1つの前記接続手段は、前記スイッチング素子と、該スイッチング素子に直近の前記保護素子の接続点との間に高抵抗体が直列に接続されることを特徴とする化合物半導体スイッチ回路装置。 - 前記高抵抗体は隣り合う前記保護素子の接続点間に接続されることを特徴とする請求項2に記載の化合物半導体スイッチ回路装置。
- 前記高抵抗体は第3不純物領域により構成されることを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
- 前記スイッチング素子は、前記基板に不純物をイオン注入して形成したチャネル層を有するFETであり、前記第3不純物領域は前記不純物の注入領域で構成され、前記チャネル層と同程度のピーク濃度を有することを特徴とする請求項4に記載の化合物半導体スイッチ回路装置。
- 前記スイッチング素子は、前記基板上にバッファ層、電子供給層、チャネル層、障壁層およびキャップ層となる半導体層を積層したHEMTであり、前記第3不純物領域は前記キャップ層を除去して該キャップ層より下の前記半導体層を露出した領域であることを特徴とする請求項4に記載の化合物半導体スイッチ回路装置。
- 前記第3不純物領域は前記キャップ層よりシート抵抗が高いことを特徴とする請求項6に記載の化合物半導体スイッチ回路装置。
- 前記第3不純物領域を構成する前記半導体層の最上層は前記障壁層であることを特徴とする請求項6に記載の化合物半導体スイッチ回路装置。
- 前記障壁層上にInGaP層が配置され、前記第3不純物領域を構成する前記半導体層の最上層は該InGaP層であることを特徴とする請求項6に記載の化合物半導体スイッチ回路装置。
- 前記高抵抗体は5KΩ以上の抵抗値を有することを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
- 前記第1不純物領域は前記接続手段の一部であることを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
- 前記パッドに接続する配線を有し、前記パッドおよび/または配線の周辺には第4不純物領域が配置され、前記第2不純物領域は前記第4不純物領域の一部であることを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
- 前記共通入力端子に高周波アナログ信号が伝搬することを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
- 前記高抵抗体は前記1つの接続手段の一部を構成することを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004371833A JP4939750B2 (ja) | 2004-12-22 | 2004-12-22 | 化合物半導体スイッチ回路装置 |
TW094135638A TWI300599B (en) | 2004-12-22 | 2005-10-13 | Chemical compound semiconductor switch circuit device |
KR1020050124647A KR100725574B1 (ko) | 2004-12-22 | 2005-12-16 | 화합물 반도체 스위치 회로 장치 |
CN2005101361826A CN1794584B (zh) | 2004-12-22 | 2005-12-20 | 化合物半导体开关电路装置 |
US11/314,101 US7538394B2 (en) | 2004-12-22 | 2005-12-22 | Compound semiconductor switch circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004371833A JP4939750B2 (ja) | 2004-12-22 | 2004-12-22 | 化合物半導体スイッチ回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006179708A true JP2006179708A (ja) | 2006-07-06 |
JP4939750B2 JP4939750B2 (ja) | 2012-05-30 |
Family
ID=36696143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004371833A Expired - Fee Related JP4939750B2 (ja) | 2004-12-22 | 2004-12-22 | 化合物半導体スイッチ回路装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7538394B2 (ja) |
JP (1) | JP4939750B2 (ja) |
KR (1) | KR100725574B1 (ja) |
CN (1) | CN1794584B (ja) |
TW (1) | TWI300599B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009135226A (ja) * | 2007-11-29 | 2009-06-18 | Nichia Corp | 定電流ダイオード及び定電流ダイオード付き発光装置 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004023555A1 (ja) | 2002-09-09 | 2004-03-18 | Sanyo Electric Co., Ltd. | 保護素子 |
JP4535668B2 (ja) * | 2002-09-09 | 2010-09-01 | 三洋電機株式会社 | 半導体装置 |
JP2004260139A (ja) * | 2003-02-06 | 2004-09-16 | Sanyo Electric Co Ltd | 半導体装置 |
JP4939749B2 (ja) * | 2004-12-22 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 化合物半導体スイッチ回路装置 |
JP4939750B2 (ja) | 2004-12-22 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 化合物半導体スイッチ回路装置 |
TW200642268A (en) * | 2005-04-28 | 2006-12-01 | Sanyo Electric Co | Compound semiconductor switching circuit device |
GB2449514B (en) * | 2007-01-26 | 2011-04-20 | Filtronic Compound Semiconductors Ltd | A diode assembly |
JP2009027081A (ja) * | 2007-07-23 | 2009-02-05 | Hitachi Cable Ltd | 半導体集積回路装置及びこれを用いた半導体スイッチ装置 |
EP2330514B1 (en) * | 2009-12-07 | 2018-12-05 | STMicroelectronics (Research & Development) Limited | An integrated circuit package |
EP2339475A1 (en) * | 2009-12-07 | 2011-06-29 | STMicroelectronics (Research & Development) Limited | Inter-chip communication interface for a multi-chip package |
EP2333673B1 (en) * | 2009-12-07 | 2014-04-16 | STMicroelectronics (Research & Development) Limited | Signal sampling and transfer |
EP2333830B1 (en) | 2009-12-07 | 2014-09-03 | STMicroelectronics (Research & Development) Limited | a package comprising a first and a second die coupled by a multiplexed bus |
EP2339795B1 (en) * | 2009-12-07 | 2013-08-14 | STMicroelectronics (Research & Development) Limited | Inter-chip communication interface for a multi-chip package |
US8521937B2 (en) | 2011-02-16 | 2013-08-27 | Stmicroelectronics (Grenoble 2) Sas | Method and apparatus for interfacing multiple dies with mapping to modify source identity |
JP2015056557A (ja) * | 2013-09-12 | 2015-03-23 | 株式会社東芝 | 半導体装置 |
DE112018001517T5 (de) * | 2017-03-22 | 2019-12-05 | Sony Semiconductor Solutions Corporation | Halbleitervorrichtung und modul |
JP6757502B2 (ja) * | 2017-06-07 | 2020-09-23 | 株式会社村田製作所 | 双方向スイッチ回路及びスイッチ装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11111927A (ja) * | 1997-10-06 | 1999-04-23 | Sony Corp | 半導体装置およびその製造方法 |
JP2001217257A (ja) * | 2000-01-31 | 2001-08-10 | Sony Corp | 半導体装置およびその製造方法 |
JP2004260139A (ja) * | 2003-02-06 | 2004-09-16 | Sanyo Electric Co Ltd | 半導体装置 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5910587B2 (ja) * | 1977-08-10 | 1984-03-09 | 株式会社日立製作所 | 半導体装置の保護装置 |
US4387386A (en) * | 1980-06-09 | 1983-06-07 | The United States Of America As Represented By The Secretary Of The Army | Microwave controlled field effect switching device |
US4339285A (en) * | 1980-07-28 | 1982-07-13 | Rca Corporation | Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation |
US4843440A (en) * | 1981-12-04 | 1989-06-27 | United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration | Microwave field effect transistor |
GB2137412B (en) * | 1983-03-15 | 1987-03-04 | Standard Telephones Cables Ltd | Semiconductor device |
DE3334167A1 (de) | 1983-09-21 | 1985-04-04 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterdiode |
US4626802A (en) * | 1984-12-24 | 1986-12-02 | Motorola, Inc. | GaAs FET oscillator noise reduction circuit |
JPS61292965A (ja) * | 1985-06-21 | 1986-12-23 | Hitachi Ltd | 半導体集積回路装置 |
JPH07120672B2 (ja) | 1986-01-28 | 1995-12-20 | 日本電気株式会社 | 半導体装置 |
US4965863A (en) * | 1987-10-02 | 1990-10-23 | Cray Computer Corporation | Gallium arsenide depletion made MESFIT logic cell |
JP2723936B2 (ja) | 1988-12-16 | 1998-03-09 | 株式会社日立製作所 | 半導体素子 |
US5157573A (en) * | 1989-05-12 | 1992-10-20 | Western Digital Corporation | ESD protection circuit with segmented buffer transistor |
JP2864841B2 (ja) * | 1992-02-04 | 1999-03-08 | 三菱電機株式会社 | 高周波高出力トランジスタ |
US5374899A (en) * | 1993-11-10 | 1994-12-20 | Itt Corporation | Self biased power amplifier employing FETs |
JP3169775B2 (ja) | 1994-08-29 | 2001-05-28 | 株式会社日立製作所 | 半導体回路、スイッチ及びそれを用いた通信機 |
JP2576433B2 (ja) * | 1994-12-14 | 1997-01-29 | 日本電気株式会社 | 半導体装置用保護回路 |
US5610790A (en) | 1995-01-20 | 1997-03-11 | Xilinx, Inc. | Method and structure for providing ESD protection for silicon on insulator integrated circuits |
JPH08236549A (ja) | 1995-03-01 | 1996-09-13 | Oki Electric Ind Co Ltd | 半導体装置 |
US5559363A (en) * | 1995-06-06 | 1996-09-24 | Martin Marietta Corporation | Off-chip impedance matching utilizing a dielectric element and high density interconnect technology |
US5654860A (en) * | 1995-08-16 | 1997-08-05 | Micron Technology, Inc. | Well resistor for ESD protection of CMOS circuits |
US5932917A (en) * | 1996-04-19 | 1999-08-03 | Nippon Steel Corporation | Input protective circuit having a diffusion resistance layer |
WO1997045877A1 (fr) | 1996-05-31 | 1997-12-04 | Hitachi, Ltd. | Dispositif semi-conducteur et sa fabrication |
US5789799A (en) * | 1996-09-27 | 1998-08-04 | Northern Telecom Limited | High frequency noise and impedance matched integrated circuits |
KR19980043416A (ko) | 1996-12-03 | 1998-09-05 | 문정환 | 이에스디(esd) 보호 회로 |
US5821827A (en) * | 1996-12-18 | 1998-10-13 | Endgate Corporation | Coplanar oscillator circuit structures |
KR100205609B1 (ko) * | 1997-01-06 | 1999-07-01 | 윤종용 | 정전기 보호 소자 |
US5841184A (en) * | 1997-09-19 | 1998-11-24 | The Whitaker Corporation | Integrated emitter drain bypass capacitor for microwave/RF power device applications |
JPH11220093A (ja) | 1998-01-29 | 1999-08-10 | Sanyo Electric Co Ltd | 半導体集積回路 |
US6265756B1 (en) * | 1999-04-19 | 2001-07-24 | Triquint Semiconductor, Inc. | Electrostatic discharge protection device |
JP3831575B2 (ja) * | 2000-05-15 | 2006-10-11 | 三洋電機株式会社 | 化合物半導体スイッチ回路装置 |
US6580107B2 (en) * | 2000-10-10 | 2003-06-17 | Sanyo Electric Co., Ltd. | Compound semiconductor device with depletion layer stop region |
JP2002368194A (ja) | 2001-06-08 | 2002-12-20 | Sanyo Electric Co Ltd | 化合物半導体スイッチ回路装置 |
JP4535668B2 (ja) * | 2002-09-09 | 2010-09-01 | 三洋電機株式会社 | 半導体装置 |
WO2004023555A1 (ja) * | 2002-09-09 | 2004-03-18 | Sanyo Electric Co., Ltd. | 保護素子 |
JP4236442B2 (ja) * | 2002-10-17 | 2009-03-11 | 三洋電機株式会社 | スイッチ回路装置 |
JP3902111B2 (ja) * | 2002-10-21 | 2007-04-04 | 新日本無線株式会社 | スイッチ半導体集積回路 |
JP4128091B2 (ja) * | 2003-02-20 | 2008-07-30 | 三洋電機株式会社 | スイッチ回路装置 |
JP2005340550A (ja) * | 2004-05-28 | 2005-12-08 | Sanyo Electric Co Ltd | 半導体装置 |
JP2005353992A (ja) * | 2004-06-14 | 2005-12-22 | Sanyo Electric Co Ltd | 化合物半導体装置およびその製造方法 |
JP2005353993A (ja) * | 2004-06-14 | 2005-12-22 | Sanyo Electric Co Ltd | 化合物半導体装置およびその製造方法 |
JP2005353991A (ja) * | 2004-06-14 | 2005-12-22 | Sanyo Electric Co Ltd | 半導体装置 |
JP4939750B2 (ja) | 2004-12-22 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 化合物半導体スイッチ回路装置 |
JP4939749B2 (ja) * | 2004-12-22 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 化合物半導体スイッチ回路装置 |
JP4939748B2 (ja) * | 2004-12-22 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 化合物半導体スイッチ回路装置 |
JP2006310512A (ja) * | 2005-04-28 | 2006-11-09 | Sanyo Electric Co Ltd | 化合物半導体スイッチ回路装置 |
TW200642268A (en) * | 2005-04-28 | 2006-12-01 | Sanyo Electric Co | Compound semiconductor switching circuit device |
JP5112620B2 (ja) * | 2005-05-31 | 2013-01-09 | オンセミコンダクター・トレーディング・リミテッド | 化合物半導体装置 |
-
2004
- 2004-12-22 JP JP2004371833A patent/JP4939750B2/ja not_active Expired - Fee Related
-
2005
- 2005-10-13 TW TW094135638A patent/TWI300599B/zh not_active IP Right Cessation
- 2005-12-16 KR KR1020050124647A patent/KR100725574B1/ko not_active IP Right Cessation
- 2005-12-20 CN CN2005101361826A patent/CN1794584B/zh not_active Expired - Fee Related
- 2005-12-22 US US11/314,101 patent/US7538394B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11111927A (ja) * | 1997-10-06 | 1999-04-23 | Sony Corp | 半導体装置およびその製造方法 |
JP2001217257A (ja) * | 2000-01-31 | 2001-08-10 | Sony Corp | 半導体装置およびその製造方法 |
JP2004260139A (ja) * | 2003-02-06 | 2004-09-16 | Sanyo Electric Co Ltd | 半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009135226A (ja) * | 2007-11-29 | 2009-06-18 | Nichia Corp | 定電流ダイオード及び定電流ダイオード付き発光装置 |
Also Published As
Publication number | Publication date |
---|---|
CN1794584A (zh) | 2006-06-28 |
US7538394B2 (en) | 2009-05-26 |
KR100725574B1 (ko) | 2007-06-08 |
TW200623278A (en) | 2006-07-01 |
TWI300599B (en) | 2008-09-01 |
US20060164150A1 (en) | 2006-07-27 |
JP4939750B2 (ja) | 2012-05-30 |
CN1794584B (zh) | 2011-05-04 |
KR20060071879A (ko) | 2006-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100725574B1 (ko) | 화합물 반도체 스위치 회로 장치 | |
KR100725884B1 (ko) | 화합물 반도체 스위치 회로 장치 | |
US7358788B2 (en) | Compound semiconductor switching circuit device | |
JP5112620B2 (ja) | 化合物半導体装置 | |
KR100701139B1 (ko) | 반도체 장치 | |
US7339210B2 (en) | Compound semiconductor switching circuit device | |
JP2006310509A (ja) | 化合物半導体スイッチ回路装置 | |
KR100742067B1 (ko) | 반도체 장치 | |
JP4535668B2 (ja) | 半導体装置 | |
JP2009064923A (ja) | 半導体装置 | |
JP2007115896A (ja) | 化合物半導体装置 | |
JP2007281551A (ja) | 化合物半導体スイッチ回路装置 | |
JP2007242751A (ja) | 化合物半導体スイッチ回路装置 | |
JP2007115895A (ja) | 化合物半導体スイッチ回路装置 | |
JP5147169B2 (ja) | スイッチ回路装置 | |
JP2006310511A (ja) | 化合物半導体スイッチ回路装置 | |
JP2007048900A (ja) | 化合物半導体装置 | |
JP2007149885A (ja) | 化合物半導体スイッチ回路装置およびその製造方法 | |
JP2006310510A (ja) | 化合物半導体スイッチ回路装置 | |
JP2007149886A (ja) | 化合物半導体スイッチ回路装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071101 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20110602 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110630 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110706 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111003 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111114 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120125 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120221 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120227 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |