JP2006066864A - 光半導体装置およびその製造方法 - Google Patents
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Abstract
【解決手段】 そこで、本発明は、光伝導性のある光半導体膜と、前記半導体膜内部に膜内とは略垂直方向に電界を印加するための一対の電極とを備え、前記電界を印加された領域に光を吸収されることで前記半導体膜中に発生したキャリアの移動によって電磁波を前記光半導体膜から発生させる光半導体装置を提供するものである。
【選択図】 図1
Description
2、55、73 絶縁体
3、42a,b、51a,b 光導波路
4、21、22、53a,b、65,66,67,68,69、71、72、89、91 半導体膜
5、43a,b、54、84 伝送線路
6、44a,b、82 アンテナ
7、10、52a,b、57a,b、74,75、80、87、88 電極
8 電源
9、35、46 電磁波
11、90 窓部
12 切りかき部
23 チップ
30 レーザ
31,34、40、90 集積素子
32 レンズ
33、45 検体
36、49 分岐部
37 ミラー
38、50 遅延系
47a,b 光伝導素子
48 半導体レーザ
56 ホール部
83 アンテナ給電部
85 低域通過フィルタ
86 光照射部
92,93 放物面鏡
94 検出器
95 ミラー
96 レンズ
97 光
98 テラヘルツ電磁波
Claims (11)
- 光伝導性のある光半導体膜と、
前記半導体膜内部に膜内とは略垂直方向に電界を印加するための一対の電極とを備え、
前記電界を印加された領域に光を吸収されることで前記半導体膜中に発生したキャリアの移動によって電磁波を前記光半導体膜から発生させることを特徴とする光半導体装置。 - 前記電極は半導体膜を挟むように上下に配置されていることを特徴とする請求項1記載の光半導体装置。
- 前記光伝導性のある半導体膜は、III−V族半導体膜であることを特徴とする請求項1記載の光半導体装置。
- 前記光伝導性のある半導体膜の少なくとも一方の面には、導電型およびエネルギーバンドギャップの異なる半導体が積層されてなることを特徴とする請求項1から3のいずれか記載の光半導体装置。
- 前記光半導体装置には前記半導体膜より発生した電磁波を伝搬する伝送路が連続して形成され、前記伝送路を構成する金属が、前記光半導体装置の電極のうち少なくとも1つと電気的に接続されていることを特徴とする請求項1記載の光半導体装置。
- 前記光半導体装置には前記半導体膜から発生した電磁波を空間に放射または受信するためのアンテナを備えることを特徴とする請求項1から5のいずれか記載の光半導体装置。
- 前記伝送路の特性インピーダンスと前記アンテナの入力インピーダンスとが略等しくなるように接続され、電磁波が前記伝送路を伝播して前記アンテナによって空間に放射または受信できることを特徴とする請求項6記載の光半導体装置。
- 前記光半導体装置には、半導体膜の電界を印加させた領域に前記半導体膜の側面より光を照射するための光導波路を備えていることを特徴とする請求項1記載の光半導体装置。
- 前記半導体膜の電界を印加させるための上部電極近傍の半導体膜領域に、空間伝搬によって上方から光照射を行うことで、前記半導体膜から電磁波を発生させることを特徴とする請求項2記載の光半導体装置。
- 請求項1から9のいずれか記載の光半導体装置を少なくとも2つ用いて、1つを電磁波の発生させるために、もう1つを前記発生させた電磁波を検出するために用い、前記電磁波の伝搬経路中の物体による前記電磁波の伝搬状態の変化をセンシングすることで前記物体の様態の情報を取得することを特徴とするセンサ装置。
- 第1の半導体基板に犠牲層をエピタキシャル成長する工程と、
光伝導性のある半導体膜をエピタキシャル成長する工程と、
前記半導体膜表面に電極を形成する工程と、
第2の基板に電極を形成する工程と、
前記半導体膜表面の電極と第2の基板の電極とを接触させて接着する工程と、
第1の基板を前記犠牲層を境界として除去する工程と、
第2の基板に接着されて現れた半導体膜の表面にさらに電極を形成する工程とを少なくとも含むことを特徴とする請求項1記載の光半導体装置の製造方法。
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JP2005025210A JP3913253B2 (ja) | 2004-07-30 | 2005-02-01 | 光半導体装置およびその製造方法 |
US10/569,601 US7723708B2 (en) | 2004-07-30 | 2005-07-28 | Optical semiconductor device in which an electromagnetic wave is generated in a region of an applied electric field |
CN2010101352550A CN101794835B (zh) | 2004-07-30 | 2005-07-28 | 光学半导体器件 |
PCT/JP2005/014259 WO2006011668A1 (en) | 2004-07-30 | 2005-07-28 | Optical semiconductor device |
EP05768593.5A EP1774627B1 (en) | 2004-07-30 | 2005-07-28 | Optical semiconductor device |
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EP (1) | EP1774627B1 (ja) |
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2005
- 2005-02-01 JP JP2005025210A patent/JP3913253B2/ja not_active Expired - Fee Related
- 2005-07-28 US US10/569,601 patent/US7723708B2/en not_active Expired - Fee Related
- 2005-07-28 WO PCT/JP2005/014259 patent/WO2006011668A1/en active Application Filing
- 2005-07-28 EP EP05768593.5A patent/EP1774627B1/en not_active Not-in-force
- 2005-07-28 CN CN2010101352550A patent/CN101794835B/zh not_active Expired - Fee Related
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JP2013140854A (ja) * | 2011-12-28 | 2013-07-18 | Seiko Epson Corp | 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 |
JP2015533023A (ja) * | 2012-09-21 | 2015-11-16 | 韓國電子通信研究院Electronics and Telecommunications Research Institute | フォトミキサおよびその製造方法 |
JP2014207654A (ja) * | 2013-03-16 | 2014-10-30 | キヤノン株式会社 | 導波路素子 |
JP2017167025A (ja) * | 2016-03-17 | 2017-09-21 | パイオニア株式会社 | 電磁波計測装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101794835B (zh) | 2012-05-30 |
EP1774627B1 (en) | 2015-06-17 |
US20080217538A1 (en) | 2008-09-11 |
EP1774627A1 (en) | 2007-04-18 |
WO2006011668A1 (en) | 2006-02-02 |
US7723708B2 (en) | 2010-05-25 |
CN101794835A (zh) | 2010-08-04 |
EP1774627A4 (en) | 2010-11-03 |
JP3913253B2 (ja) | 2007-05-09 |
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