JP2006047999A - 平板ディスプレイ装置 - Google Patents
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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Abstract
【解決手段】 基板と、基板の上部に備えられた第1ゲート電極と、第1ゲート電極と絶縁される第1電極と、第1ゲート電極と絶縁され、第1電極を同一平面で取り囲む第2電極と、第1ゲート電極と絶縁され、第1電極及び第2電極に接する半導体層と、第1電極及び第2電極のうち何れか一つの電極に電気的に連結された画素電極を備えるディスプレイ素子と、を備えることを特徴とする平板ディスプレイ装置である。
【選択図】 図4
Description
211 第2ゲート電極
212 第4電極
213 第3電極
220 第1導線
230 第2導線
240 キャパシタ
241 第1キャパシタ電極
242 第2キャパシタ電極
250 第1TFT
251 第1ゲート電極
252 第2電極
253 第1電極
261 画素電極
270 第3導線
285 保護膜
285a コンタクトホール
285b 第1コンタクトホール
285c 第2コンタクトホール
Claims (27)
- 基板と、
前記基板の上部に備えられた第1ゲート電極と、
前記第1ゲート電極と絶縁される第1電極と、
前記第1ゲート電極と絶縁され、前記第1電極を同一平面で取り囲む第2電極と、
前記第1ゲート電極と絶縁され、前記第1電極及び前記第2電極に接する半導体層と、
前記第1電極及び前記第2電極のうち何れか一つの電極に電気的に連結された画素電極を備えるディスプレイ素子と、を備えることを特徴とする平板ディスプレイ装置。 - 前記第1電極及び前記第2電極は、前記第1ゲート電極の上部に備えられることを特徴とする請求項1に記載の平板ディスプレイ装置。
- 前記第1ゲート電極は、前記第1電極及び前記第2電極の間の領域に対応するように備えられることを特徴とする請求項1に記載の平板ディスプレイ装置。
- 前記第1電極は、第1ドレイン電極であり、前記第2電極は、第1ソース電極であり、前記画素電極に連結された電極は、前記第1電極であることを特徴とする請求項1に記載の平板ディスプレイ装置。
- 前記第1ゲート電極に連結される第1キャパシタ電極と、
前記第2電極に連結される第2キャパシタ電極と、をさらに備えることを特徴とする請求項4に記載の平板ディスプレイ装置。 - 前記第1キャパシタ電極と前記第1ゲート電極とは、一体に備えられ、前記第2キャパシタ電極と前記第2電極とは、一体に備えられることを特徴とする請求項5に記載の平板ディスプレイ装置。
- 第2ゲート電極と、
前記第2ゲート電極と絶縁される第3電極と、
前記第2ゲート電極と絶縁され、前記第3電極を取り囲む第4電極と、
前記第2ゲート電極と絶縁され、前記第3電極及び前記第4電極に接する半導体層と、をさらに備え、
前記第3電極及び前記第4電極のうち何れか一つの電極が、前記第1ゲート電極に電気的に連結されることを特徴とする請求項5に記載の平板ディスプレイ装置。 - 前記第3電極及び前記第4電極は、前記第2ゲート電極の上部に備えられることを特徴とする請求項7に記載の平板ディスプレイ装置。
- 前記第2ゲート電極は、前記第3電極及び前記第4電極の間の領域に対応するように備えられることを特徴とする請求項7に記載の平板ディスプレイ装置。
- 前記第3電極は、第2ドレイン電極であり、前記第4電極は、第2ソース電極であり、前記第1ゲート電極に電気的に連結された電極は、前記第3電極であることを特徴とする請求項7に記載の平板ディスプレイ装置。
- 前記第1ゲート電極、前記第2ゲート電極及び前記第1キャパシタ電極を覆うように、前記基板の全面にゲート絶縁膜がさらに備えられ、前記第1電極ないし前記第4電極、前記第2キャパシタ電極及び前記半導体層を覆うように、前記基板の全面に保護膜がさらに備えられることを特徴とする請求項10に記載の平板ディスプレイ装置。
- 前記半導体層は、前記第1電極ないし前記第4電極の上部に備えられ、
前記第3電極と前記第1キャパシタ電極とは、
前記第3電極の一部が露出されるように、前記保護膜及び前記半導体層に備えられた第1コンタクトホールと、
前記第1キャパシタ電極の一部が露出されるように、前記保護膜、前記半導体層及び前記ゲート絶縁膜に備えられた第2コンタクトホールと、
前記保護膜上部と、にわたって備えられた配線で連結されたことを特徴とする請求項11に記載の平板ディスプレイ装置。 - 前記第3電極と前記第1キャパシタ電極とを連結する配線は、前記ゲート絶縁膜に備えられる第2コンタクトホールを通じて前記第1キャパシタ電極に連結され、前記ゲート絶縁膜上に備えられ、前記第4電極と同じ材料で形成される金属層をさらに備えることを特徴とする請求項12に記載の平板ディスプレイ装置。
- 前記第1電極ないし前記第4電極は、前記半導体層の上部に備えられ、
前記第3電極と前記第1キャパシタ電極とは、
前記第3電極の一部が露出されるように、前記保護膜に備えられた第1コンタクトホールと、
前記第1キャパシタ電極の一部が露出されるように、前記保護膜、前記半導体層及び前記ゲート絶縁膜に備えられた第2コンタクトホールと、
前記保護膜上部と、にわたって備えられた配線で連結されたことを特徴とする請求項11に記載の平板ディスプレイ装置。 - 前記第3電極と前記第1キャパシタ電極とを連結する配線は、前記ゲート絶縁膜及び前記半導体層に備えられる第2コンタクトホールを通じて前記第1キャパシタ電極に連結され、
前記半導体層上に備えられ、前記第4電極と同じ材料で形成される金属層をさらに備えることを特徴とする請求項14に記載の平板ディスプレイ装置。 - 前記画素電極は、前記保護膜上に備えられ、
前記第3電極と前記第1キャパシタ電極とを連結する配線は、前記画素電極と同じ材料で形成されたことを特徴とする請求項12に記載の平板ディスプレイ装置。 - 前記画素電極は、前記保護膜上に備えられ、
前記第3電極と前記第1キャパシタ電極とを連結する配線は、前記画素電極と同じ材料で形成されたことを特徴とする請求項14に記載の平板ディスプレイ装置。 - 前記第3電極は、第2ソース電極であり、前記第4電極は、第2ドレイン電極であり、前記第1ゲート電極に電気的に連結された電極は、前記第4電極であることを特徴とする請求項7に記載の平板ディスプレイ装置。
- 前記第1ゲート電極、前記第2ゲート電極、前記第1電極ないし第4電極、前記第1キャパシタ電極、前記第2キャパシタ電極及び前記半導体層を覆うように、前記基板の全面に保護膜をさらに備え、前記画素電極は、前記保護膜上に備えられることを特徴とする請求項18に記載の平板ディスプレイ装置。
- 第2ゲート電極と、
前記第2ゲート電極と絶縁される第3電極と、
前記第2ゲート電極と絶縁され、前記第3電極を取り囲む第4電極と、
前記第2ゲート電極と絶縁され、前記第3電極及び前記第4電極に接する半導体層と、をさらに備え、
前記第3電極及び前記第4電極のうち何れか一つの電極が、前記第1ゲート電極に電気的に連結されたことを特徴とする請求項4に記載の平板ディスプレイ装置。 - 前記第3電極及び前記第4電極は、前記第2ゲート電極の上部に備えられることを特徴とする請求項20に記載の平板ディスプレイ装置。
- 前記第2ゲート電極は、前記第3電極及び前記第4電極の間の領域に対応するように備えられることを特徴とする請求項20に記載の平板ディスプレイ装置。
- 前記第3電極は、第2ドレイン電極であり、前記第4電極は、第2ソース電極であり、前記第1ゲート電極に電気的に連結された電極は、前記第3電極であることを特徴とする請求項20に記載の平板ディスプレイ装置。
- 前記第3電極は、第2ソース電極であり、前記第4電極は、第2ドレイン電極であり、前記第1ゲート電極に電気的に連結された電極は、前記第4電極であることを特徴とする請求項20に記載の平板ディスプレイ装置。
- 前記半導体層は、有機半導体層であることを特徴とする請求項1に記載の平板ディスプレイ装置。
- 前記ディスプレイ素子から放出される光は、前記基板の逆方向に出射されることを特徴とする請求項1に記載の平板ディスプレイ装置。
- 前記ディスプレイ素子は、電界発光素子であることを特徴とする請求項1に記載の平板ディスプレイ装置。
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KR1020040061947A KR100669720B1 (ko) | 2004-08-06 | 2004-08-06 | 평판 디스플레이 장치 |
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EP (1) | EP1624489B1 (ja) |
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KR (1) | KR100669720B1 (ja) |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011001728A1 (ja) | 2009-07-01 | 2011-01-06 | シャープ株式会社 | アクティブマトリクス基板及び有機el表示装置 |
JP2012080096A (ja) * | 2010-09-10 | 2012-04-19 | Semiconductor Energy Lab Co Ltd | 発光表示装置の作製方法 |
US8575602B2 (en) | 2009-10-20 | 2013-11-05 | Sharp Kabushiki Kaisha | Active matrix substrate and organic EL display device |
US8786526B2 (en) | 2009-07-28 | 2014-07-22 | Sharp Kabushiki Kaisha | Active matrix substrate, display device, and organic EL display device |
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CN100531501C (zh) | 2009-08-19 |
DE602005023694D1 (de) | 2010-11-04 |
US7279714B2 (en) | 2007-10-09 |
US20060108916A1 (en) | 2006-05-25 |
KR20060013115A (ko) | 2006-02-09 |
EP1624489A2 (en) | 2006-02-08 |
KR100669720B1 (ko) | 2007-01-16 |
JP4198131B2 (ja) | 2008-12-17 |
EP1624489A3 (en) | 2007-10-31 |
CN1744787A (zh) | 2006-03-08 |
EP1624489B1 (en) | 2010-09-22 |
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