JP2006026769A - Cmp pad conditioner - Google Patents

Cmp pad conditioner Download PDF

Info

Publication number
JP2006026769A
JP2006026769A JP2004206774A JP2004206774A JP2006026769A JP 2006026769 A JP2006026769 A JP 2006026769A JP 2004206774 A JP2004206774 A JP 2004206774A JP 2004206774 A JP2004206774 A JP 2004206774A JP 2006026769 A JP2006026769 A JP 2006026769A
Authority
JP
Japan
Prior art keywords
cmp pad
pad conditioner
abrasive grains
base
curvature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004206774A
Other languages
Japanese (ja)
Other versions
JP4145273B2 (en
Inventor
Norio Imai
憲生 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noritake Co Ltd
Noritake Super Abrasive Co Ltd
Original Assignee
Noritake Co Ltd
Noritake Super Abrasive Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Noritake Co Ltd, Noritake Super Abrasive Co Ltd filed Critical Noritake Co Ltd
Priority to JP2004206774A priority Critical patent/JP4145273B2/en
Publication of JP2006026769A publication Critical patent/JP2006026769A/en
Application granted granted Critical
Publication of JP4145273B2 publication Critical patent/JP4145273B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a CMP pad conditioner capable of promoting dressing of a polishing pad, while restraining generation of a scratch. <P>SOLUTION: A grinding part 2 is arranged on the outer peripheral side of a conditioning disk 1, and the grinding part 2 is formed by fixing an abrasive grain 4 to a base 3 by electrodeposition. The abrasive grain 4 uses diamond arranged in a crystal shape. A projecting part and a recessed part are alternately formed in the radial direction on a surface of the base 3, and the projecting part and the recessed part are formed of a smooth curve having a predetermined radius of curvature. A radius of curvature R1 of the projecting part and a radius of curvature R2 of the recessed part are controlled so as to become a range for satisfying R2 = (1/10 to 10) × R1. A pitch of the projecting part and the recessed part is set to 0.1 mm or more, and a step height T between the highest point of the projecting part and the lowest point of the recessed part is controlled in a range of 0.005 to 0.05 mm. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、シリコンウエハ等の表面を平坦化するために用いられるＣＭＰ装置において使用されるＣＭＰパッドコンディショナーに関する。   The present invention relates to a CMP pad conditioner used in a CMP apparatus used for planarizing a surface of a silicon wafer or the like.

シリコンウエハ等の表面を平坦化する方法として、化学的機械的研磨（Chemical Mechanical Polishing：以下「ＣＭＰ」と略記する）が近年よく用いられている。
図７に、ＣＭＰ装置の構成を示す。 As a method for flattening the surface of a silicon wafer or the like, chemical mechanical polishing (hereinafter abbreviated as “CMP”) has been frequently used in recent years.
FIG. 7 shows the configuration of the CMP apparatus.

図７において、ＣＭＰ装置５１は、回転テーブル回転軸５２を中心として回転する回転テーブル５３上に設けられた研磨ヘッド５４とコンディショナー５５とを備えている。回転テーブル５３の上表面には、研磨パッド５６が形成されている。   In FIG. 7, the CMP apparatus 51 includes a polishing head 54 and a conditioner 55 provided on a rotary table 53 that rotates about a rotary table rotary shaft 52. A polishing pad 56 is formed on the upper surface of the rotary table 53.

研磨ヘッド５４は、研磨ヘッド回転軸５７と円板状のウエハキャリア５８とを備え、ウエハキャリア５８の下面にはウエハ５９が吸着されている。円板状のウエハキャリア５８は、研磨ヘッド回転軸５７を中心として回転する。
コンディショナー５５は、コンディショナー回転軸６０と円板状のコンディショニングディスク６１とを備える。コンディショニングディスク６１は、コンディショナー回転軸６０を中心として回転する。 The polishing head 54 includes a polishing head rotating shaft 57 and a disk-shaped wafer carrier 58, and a wafer 59 is attracted to the lower surface of the wafer carrier 58. The disk-shaped wafer carrier 58 rotates around the polishing head rotating shaft 57.
The conditioner 55 includes a conditioner rotating shaft 60 and a disk-shaped conditioning disk 61. The conditioning disk 61 rotates about the conditioner rotation shaft 60.

スラリー供給部６２からは、研磨パッド５６上に研磨剤であるスラリー６３が供給され、スラリー６３はウエハ５９と研磨パッド５６との接触面に取り込まれる。ウエハ５９の表面は、回転テーブル５３表面の研磨パッド５６に接触し、スラリー６３によって研磨される。   From the slurry supply unit 62, a slurry 63 that is an abrasive is supplied onto the polishing pad 56, and the slurry 63 is taken into a contact surface between the wafer 59 and the polishing pad 56. The surface of the wafer 59 comes into contact with the polishing pad 56 on the surface of the rotary table 53 and is polished by the slurry 63.

コンディショニングディスク６１の外周側下面には、ダイヤモンド等からなる砥粒が固着され、砥粒を研磨パッド５６に擦りつけて研磨パッド５６表面を研削する。これによって、研磨パッド５６の表面を毛羽立たせた状態を持続させ、研磨状態を一定に保つことができる。   Abrasive grains made of diamond or the like are fixed to the lower surface on the outer peripheral side of the conditioning disk 61, and the abrasive grains are rubbed against the polishing pad 56 to grind the surface of the polishing pad 56. Thereby, the state where the surface of the polishing pad 56 is fluffed can be maintained and the polishing state can be kept constant.

このようなＣＭＰパッドコンディショナーは、シリコンデバイス等の超微細積層回路の高平坦性を確保する目的で使用されるため、コンディショニング面が平坦性、均質性、安定性を有することが重要となる。
ＣＭＰパッドコンディショナーの砥粒先端の切れ刃状態が鋭利であると、ポリッシングパッドの目立ては進行しやすいが、刃先が鋭利であるために、砥粒の微細破砕が発生しやすい。この砥粒の微細破砕や、砥粒脱落、砥粒欠損によってパッド上に硬質物質が付着すると、シリコンウエハ面にスクラッチを発生させる。 Since such a CMP pad conditioner is used for the purpose of ensuring high flatness of an ultrafine laminated circuit such as a silicon device, it is important that the conditioning surface has flatness, homogeneity, and stability.
When the cutting edge state of the abrasive grain tip of the CMP pad conditioner is sharp, the sharpening of the polishing pad is likely to proceed, but since the cutting edge is sharp, fine grinding of the abrasive grains is likely to occur. When a hard substance adheres to the pad due to fine crushing of abrasive grains, abrasive grain dropping, or abrasive grain defects, scratches are generated on the silicon wafer surface.

このようなスクラッチの発生を防止することを目的として、近年、ＣＭＰパッドコンディショナーには破砕強度が高い、整った形状の砥粒が用いられている。例えば、ダイヤモンドはその合成条件によって結晶形状が異なり、［１１１］面を主体とする八面体や［１００］面を主体とする六面体等が用いられている。ただし、これらの六面体、八面体についても、完璧な形状のものは稀であり、実際には砥粒の結晶形が揃ったものとして、切頭八面体、六・八面体の砥粒が使用されている。これらの砥粒の結晶形状の一例を図８に示す。（ａ）は八面体、（ｂ）は切頭八面体、（ｃ）は六・八面体である。   In order to prevent the occurrence of such scratches, in recent years, abrasive grains having a well-shaped shape with high crushing strength have been used for CMP pad conditioners. For example, the crystal shape of diamond varies depending on the synthesis conditions, and an octahedron mainly composed of the [111] plane or a hexahedron mainly composed of the [100] plane is used. However, these hexahedrons and octahedrons are rarely in perfect shape, and in fact, truncated octahedrons and hexahedrons of octahedrons are used as the crystal shapes of the abrasive grains are aligned. ing. An example of the crystal shape of these abrasive grains is shown in FIG. (A) is an octahedron, (b) is a truncated octahedron, and (c) is a hexahedron.

これらの整った形状の砥粒を用いると、スクラッチの発生を防止することは可能となるものの、砥粒先端部にフラットな結晶面が存在することになり、また［１１１］面と［１００］面が形成する稜辺が鈍角となるため、切れ刃として十分機能しなくなる。従って、ポリッシングパッドの目立てを進行させて、研磨スラリーの保持力を安定させ、ポリッシング能率を向上することが困難であった。
ダイヤモンド等の超砥粒を用いて、特定の砥粒だけが加工に関与するように砥粒を配置した電着砥石が、特許文献１に記載されている。
また、台金表面をサイン波状にしスラリーの排出を促進し、非研磨面の研磨によるダメージを小さくする電着砥石が、特許文献２に記載されている。 When these well-shaped abrasive grains can be used, it is possible to prevent the occurrence of scratches, but there will be a flat crystal plane at the tip of the abrasive grains, and the [111] plane and [100] plane. Since the edge formed by the surface becomes an obtuse angle, it does not function sufficiently as a cutting edge. Therefore, it has been difficult to improve the polishing efficiency by advancing the sharpening of the polishing pad to stabilize the holding power of the polishing slurry.
Patent Document 1 discloses an electrodeposition grindstone in which abrasive grains are arranged so that only specific abrasive grains are involved in processing using superabrasive grains such as diamond.
Further, Patent Document 2 discloses an electrodeposition grindstone that makes the base metal surface sine wave shape, promotes the discharge of slurry, and reduces damage caused by polishing of the non-polished surface.

実開平６−２４８６０号公報Japanese Utility Model Publication No. 6-24860 特開２０００−１９８０７２号公報JP 2000-198072 A

しかし、特許文献１に記載のように砥粒を配置したものをＣＭＰパッドコンディショナーに適用したとしても、台金形状が四角錐状突起であることから、パッド上に作用する砥粒は先端部に位置するごく僅かの砥粒だけとなり、寿命が短くなってしまう。また、特許文献２に記載のように単に台金表面をサイン波状にするだけでは、スラリーの排出効果は期待できるが、ポリッシングパッドの目立てを促進させることは不可能である。
本発明は、上記の問題点を解決するためになされたもので、スクラッチの発生を抑制しつつ、台金表面の最適な曲率半径、ピッチ、段差条件を見出して、ポリッシングパッドの目立てを促進することが可能なＣＭＰパッドコンディショナーを提供することを目的とする。 However, even if an arrangement of abrasive grains as described in Patent Document 1 is applied to a CMP pad conditioner, the base metal shape is a quadrangular pyramidal projection, so that the abrasive grains acting on the pad are at the tip. Only a few abrasive grains are positioned, and the life is shortened. Further, as described in Patent Document 2, merely by making the surface of the base metal into a sine wave shape, an effect of discharging the slurry can be expected, but it is impossible to promote sharpening of the polishing pad.
The present invention has been made to solve the above-described problems, and finds the optimal curvature radius, pitch, and step condition of the base metal surface while suppressing the occurrence of scratches, and promotes sharpening of the polishing pad. It is an object of the present invention to provide a CMP pad conditioner that can be used.

以上の課題を解決するために、本発明は、コンディショニングディスクの外周側に設けられた研削部の基台の表面には、凸部と凹部とが径方向に交互に形成され、前記凸部と前記凹部とは所定の曲率半径を有する滑らかな曲線によって形成されており、前記基台上に結晶形の揃った砥粒が電着固定されていることを特徴とするＣＭＰパッドコンディショナーである。   In order to solve the above-described problems, the present invention is provided such that convex portions and concave portions are alternately formed in the radial direction on the surface of the base of the grinding portion provided on the outer peripheral side of the conditioning disk. The concave portion is a CMP pad conditioner formed by a smooth curve having a predetermined radius of curvature and electrodepositing abrasive grains having a uniform crystal form on the base.

研削部の基台の表面に同心状の凸部と凹部とを径方向に交互に形成することにより、基台に固着された砥粒先端部の平坦な結晶面を結ぶ線も、基台表面の形状と同じような形状となる。そのため、結晶形が揃った砥粒を用いても、砥粒結晶面の切れ刃部分をポリッシングパッドに押し当てることができ、切れ刃として十分機能させることができる。従って、スクラッチの発生を抑制しつつ、ポリッシングパッドの目立てを促進することが可能なＣＭＰパッドコンディショナーを実現することができる。   By forming concentric convex parts and concave parts in the radial direction alternately on the surface of the base of the grinding part, the line connecting the flat crystal surface of the abrasive grain tip fixed to the base is also It becomes the shape similar to the shape. For this reason, even when abrasive grains having a uniform crystal form are used, the cutting edge portion of the abrasive grain crystal face can be pressed against the polishing pad, and can function sufficiently as a cutting edge. Accordingly, it is possible to realize a CMP pad conditioner capable of promoting the sharpening of the polishing pad while suppressing the occurrence of scratches.

本発明は、前記凸部の曲率半径Ｒ１と、前記凹部の曲率半径Ｒ２とが、Ｒ２＝（１／１０〜１０）×Ｒ１の関係を満たすことを特徴とする。凸部と凹部の曲率半径をこの範囲内とすることにより、基台に配置された砥粒の傾きを好適に制御することができる。
曲率半径Ｒ１と曲率半径Ｒ２とが、上記の関係を満たさない場合には、砥粒結晶面の切れ刃部分を最適な角度でパッドに押し当てる事ができず、目立てを促進することが出来ない為、好ましくない。 The present invention is characterized in that the curvature radius R1 of the convex portion and the curvature radius R2 of the concave portion satisfy a relationship of R2 = (1/10 to 10) × R1. By making the curvature radius of a convex part and a recessed part into this range, the inclination of the abrasive grain arrange | positioned at a base can be controlled suitably.
If the curvature radius R1 and the curvature radius R2 do not satisfy the above relationship, the cutting edge portion of the abrasive grain crystal surface cannot be pressed against the pad at an optimum angle, and sharpening cannot be promoted. Therefore, it is not preferable.

本発明は、前記凸部と前記凹部のピッチは、０．１ｍｍ以上であることを特徴とする。凸部と凹部のピッチを０．１ｍｍ以上とすることにより、有効に作用する砥粒の集中度を自在に変化させることができる。凸部と凹部のピッチが０．１ｍｍ未満であると、台金加工が困難となり、安定した精度、性能を確保することが出来ない。   The present invention is characterized in that a pitch between the convex portion and the concave portion is 0.1 mm or more. By setting the pitch between the convex part and the concave part to be 0.1 mm or more, the concentration of abrasive grains that act effectively can be freely changed. When the pitch between the convex portion and the concave portion is less than 0.1 mm, the base metal processing becomes difficult, and stable accuracy and performance cannot be ensured.

本発明は、前記凸部の最高点と前記凹部の最低点との段差は、０．００５ｍｍ以上０．０５ｍｍ以下の範囲であることを特徴とする。段差を上記の範囲内とすることにより、有効に作用する砥粒の集中度を自在に変化させることができる。
段差が０．００５ｍｍ未満であると、砥粒の最適な角度が確保できず、パッドの目立てを促進することができない。また、段差が０．０５ｍｍを超えると、凹部の砥粒が作用しなくなり、作用砥粒数が確保できなくなって、寿命が短くなるため好ましくない。
本発明では、砥粒の長径と短径との比が１．１以下であることを特徴とする。このような砥粒を用いることにより、砥粒の微少破砕によるスクラッチの発生を抑制することができる。砥粒の長径と短径との比が１．１を超えると、砥粒に微少破砕が発生する可能性が高くなり、スクラッチ発生の原因となって好ましくない。 The present invention is characterized in that a step between the highest point of the convex portion and the lowest point of the concave portion is in a range of 0.005 mm to 0.05 mm. By setting the step within the above range, the concentration of abrasive grains that act effectively can be freely changed.
If the step is less than 0.005 mm, the optimum angle of the abrasive grains cannot be ensured, and the sharpening of the pad cannot be promoted. On the other hand, if the step exceeds 0.05 mm, the abrasive grains in the recess do not work, the number of working abrasive grains cannot be secured, and the life is shortened, which is not preferable.
In the present invention, the ratio of the major axis to the minor axis of the abrasive grains is 1.1 or less. By using such abrasive grains, it is possible to suppress the generation of scratches due to the fine crushing of the abrasive grains. If the ratio of the major axis to the minor axis of the abrasive grains exceeds 1.1, there is a high possibility that the abrasive grains will be finely crushed, which is not preferable because it causes scratches.

本発明によると、スクラッチの発生を抑制しつつ、ポリッシングパッドの目立てを促進することが可能なＣＭＰパッドコンディショナーを実現することができる。   According to the present invention, it is possible to realize a CMP pad conditioner capable of promoting the sharpening of a polishing pad while suppressing the occurrence of scratches.

以下、本発明のＣＭＰパッドコンディショナーをその実施形態に基づいて説明する。
図１に、本発明の実施形態に係るＣＭＰパッドコンディショナーの構成を示す。図１（ａ）は、ＣＭＰパッドコンディショナーのコンディショニングディスクを示し、コンディショニングディスク１の外周側に研削部２が設けられている。研削部２の詳細を図１（ｂ）に示す。研削部２は、基台３に砥粒４が電着によって固定されており、砥粒４は、結晶形状が整ったダイヤモンドが用いられている。基台３の表面形状を図２に基づいて説明する。 Hereinafter, the CMP pad conditioner of the present invention will be described based on its embodiments.
FIG. 1 shows a configuration of a CMP pad conditioner according to an embodiment of the present invention. FIG. 1A shows a conditioning disk of a CMP pad conditioner, and a grinding part 2 is provided on the outer peripheral side of the conditioning disk 1. The detail of the grinding part 2 is shown in FIG.1 (b). In the grinding part 2, abrasive grains 4 are fixed to a base 3 by electrodeposition, and the abrasive grains 4 are made of diamond having a uniform crystal shape. The surface shape of the base 3 will be described with reference to FIG.

基台３の表面５は、凸部６と凹部７とが径方向に交互に形成され、凸部６と凹部７とは所定の曲率半径を有する滑らかな曲線によって形成されている。図２（ａ）は、凸部６の曲率半径Ｒ１と凹部７の曲率半径Ｒ２とが等しい場合を示している。凸部６の最高点と凹部７の最低点との横方向の間隔をピッチＰとし、凸部６の最高点と凹部７の最低点との高さ方向の段差をＴとしている。ここでは、凸部６と凹部７のピッチは０．１ｍｍ以上であり、段差Ｔは０．００５ｍｍ〜０．０５ｍｍの範囲でコントロールされている。   On the surface 5 of the base 3, convex portions 6 and concave portions 7 are alternately formed in the radial direction, and the convex portions 6 and the concave portions 7 are formed by a smooth curve having a predetermined radius of curvature. FIG. 2A shows a case where the curvature radius R1 of the convex portion 6 and the curvature radius R2 of the concave portion 7 are equal. A pitch P is a lateral distance between the highest point of the convex portion 6 and the lowest point of the concave portion 7, and T is a step in the height direction between the highest point of the convex portion 6 and the lowest point of the concave portion 7. Here, the pitch of the convex part 6 and the recessed part 7 is 0.1 mm or more, and the level | step difference T is controlled in the range of 0.005 mm-0.05 mm.

図２（ｂ）は、凸部６の曲率半径Ｒ１が凹部７の曲率半径Ｒ２より小さい場合を示し、図２（ｃ）は、凸部６の曲率半径Ｒ１が凹部７の曲率半径Ｒ２より大きい場合を示している。Ｒ１とＲ２の関係は、Ｒ２＝（１／１０〜１０）×Ｒ１を満たす範囲となるようにコントロールされている。   2B shows a case where the curvature radius R1 of the convex portion 6 is smaller than the curvature radius R2 of the concave portion 7, and FIG. 2C shows that the curvature radius R1 of the convex portion 6 is larger than the curvature radius R2 of the concave portion 7. Shows the case. The relationship between R1 and R2 is controlled to be in a range satisfying R2 = (1/10 to 10) × R1.

基台３の表面形状について、凸部６と凹部７の曲率半径の関係、ピッチ、および段差が以上の範囲となるようにコントロールすることは、超精密旋盤を使用して表面形状を加工することによって実現できる。但しＣＭＰパッドコンディショナーの台金として必要な精度である、平面、平行度を精密に加工、確保する為には、専用のワーク保持クランプ治具が必要となる。   To control the surface shape of the base 3 so that the relationship between the radius of curvature of the convex portion 6 and the concave portion 7, the pitch, and the step are within the above ranges, the surface shape is processed using an ultra-precision lathe. Can be realized. However, in order to precisely process and secure the flatness and parallelism, which are the precision required as a base for the CMP pad conditioner, a dedicated work holding clamp jig is required.

以下に、具体的な実施例を示す。
砥粒は、粒径が２００μｍ程度であって、長径短径比が１．１以下であるものを用い、Ｒ１とＲ２の関係をＲ２＝（１／５×Ｒ１）とし、ピッチを０．３ｍｍとし、段差を０．０３ｍｍとしたＣＭＰパッドコンディショナー（以下、「発明品」という）を作製し、以下の試験条件で試験を行った。ポリッシュ試験条件を表１に示し、パッド除去条件を表２に示す。発明品との性能比較を行うために、研削面を平坦にしたＣＭＰパッドコンディショナー（以下、「従来品」という）を作製した。発明品、従来品のいずれも、型式は１００Ｄ−４Ｔ−１０Ｗであり、電着による単層配列とした。 Specific examples are shown below.
Abrasive grains having a grain size of about 200 μm and a major axis / minor axis ratio of 1.1 or less are used, the relationship between R1 and R2 is R2 = (1/5 × R1), and the pitch is 0.3 mm. Then, a CMP pad conditioner (hereinafter referred to as “invention product”) having a step of 0.03 mm was produced and tested under the following test conditions. Polishing test conditions are shown in Table 1, and pad removal conditions are shown in Table 2. In order to compare the performance with the inventive product, a CMP pad conditioner (hereinafter referred to as “conventional product”) having a flat grinding surface was produced. Both the invention product and the conventional product have a model type of 100D-4T-10W and have a single layer arrangement by electrodeposition.

Figure 2006026769
Figure 2006026769

Figure 2006026769
Figure 2006026769

図３に、時間の経過に伴うウエハポリッシュレートの変化を示す。図３において、ウエハポリッシュレート指数は、従来品の初期ポリッシュレートを１００として定義される指数である。従来品は初期のウエハポリッシュレートが低いため、３０時間経過時点で指数が８０まで低下する。これに対し、発明品は初期のウエハポリッシュレートが高く、ポリッシング能率が良いため、４５時間経過しても指数が１００を上回っており、寿命が向上している。   FIG. 3 shows changes in the wafer polish rate over time. In FIG. 3, the wafer polish rate index is an index defined with the initial polish rate of the conventional product as 100. The conventional product has a low initial wafer polish rate, so the index drops to 80 after 30 hours. In contrast, the inventive product has a high initial wafer polish rate and good polishing efficiency, so that the index exceeds 100 even after 45 hours and the life is improved.

図４に、時間の経過に伴うパッド除去レートの変化を示す。図４において、パッド除去レート指数は、従来品の初期パッド除去レートを１００として定義される指数である。図４からわかるように、発明品は従来品に比べて、パッド除去レートを約２０％以上向上することができた。   FIG. 4 shows a change in the pad removal rate with time. In FIG. 4, the pad removal rate index is an index defined with the initial pad removal rate of the conventional product as 100. As can be seen from FIG. 4, the inventive product was able to improve the pad removal rate by about 20% or more compared to the conventional product.

次に、凸部６の曲率半径Ｒ１と凹部７の曲率半径Ｒ２との関係を変化させたときの、パッド除去レートを図５に示す。ここでは、ピッチを０．３ｍｍとし、段差を０．０３ｍｍとしている。図５からわかるように、Ｒ１とＲ２の関係が、Ｒ２＝（１／１０〜１０）×Ｒ１を満たすときに、パッド除去レート指数が良好である。   Next, FIG. 5 shows the pad removal rate when the relationship between the curvature radius R1 of the convex portion 6 and the curvature radius R2 of the concave portion 7 is changed. Here, the pitch is 0.3 mm and the step is 0.03 mm. As can be seen from FIG. 5, the pad removal rate index is good when the relationship between R1 and R2 satisfies R2 = (1/10 to 10) × R1.

次に、凸部６の最高点と凹部７の最低点との高さ方向の段差Ｔを変化させたときの、パッド除去レートの時間変化を図６に示す。ここでは、ピッチを０．３ｍｍとし、Ｒ１とＲ２の関係を、Ｒ２＝１／５×Ｒ１としている。図６からわかるように、凸部の最高点と凹部の最低点との段差が、０．００５ｍｍ〜０．０５ｍｍの範囲であるときに、初期のウエハポリッシュレートが高く、ポリッシング能率が良いため、４５時間経過しても指数が高いレベルで維持されており、寿命が向上している。   Next, FIG. 6 shows a time change of the pad removal rate when the height difference T between the highest point of the convex portion 6 and the lowest point of the concave portion 7 is changed. Here, the pitch is 0.3 mm, and the relationship between R1 and R2 is R2 = 1/5 × R1. As can be seen from FIG. 6, when the step between the highest point of the convex portion and the lowest point of the concave portion is in the range of 0.005 mm to 0.05 mm, the initial wafer polish rate is high and the polishing efficiency is good. Even after 45 hours, the index is maintained at a high level, and the life is improved.

本発明は、スクラッチの発生を抑制しつつ、ポリッシングパッドの目立てを促進することが可能なＣＭＰパッドコンディショナーとして利用することができる。   The present invention can be used as a CMP pad conditioner capable of promoting the sharpening of a polishing pad while suppressing the occurrence of scratches.

本発明の実施形態に係るＣＭＰパッドコンディショナーの構成を示す図である。It is a figure which shows the structure of the CMP pad conditioner concerning embodiment of this invention. ＣＭＰパッドコンディショナーの研削部の基台の表面形状を示す図である。It is a figure which shows the surface shape of the base of the grinding part of CMP pad conditioner. 時間の経過に伴うウエハポリッシュレートの変化を示す図である。It is a figure which shows the change of the wafer polish rate with progress of time. 時間の経過に伴うパッド除去レートの変化を示す図である。It is a figure which shows the change of the pad removal rate with progress of time. 凸部の曲率半径Ｒ１と凹部の曲率半径Ｒ２との関係を変化させたときの、パッド除去レートを示す図である。It is a figure which shows a pad removal rate when changing the relationship between the curvature radius R1 of a convex part, and the curvature radius R2 of a recessed part. 凸部の最高点と凹部の最低点との高さ方向の段差Ｔを変化させたときの、パッド除去レートの時間変化を示す図である。It is a figure which shows the time change of a pad removal rate when the level | step difference T of the height direction of the highest point of a convex part and the lowest point of a recessed part is changed. ＣＭＰ装置の構成を示す図である。It is a figure which shows the structure of CMP apparatus. 砥粒の結晶形状の一例を示す図である。It is a figure which shows an example of the crystal | crystallization shape of an abrasive grain.

符号の説明Explanation of symbols

１ コンディショニングディスク
２ 研削部
３ 基台
４ 砥粒
５ 基台の表面
６ 凸部
７ 凹部 DESCRIPTION OF SYMBOLS 1 Conditioning disk 2 Grinding part 3 Base 4 Abrasive grain 5 Surface of base 6 Convex part 7 Concave part

Claims (5)

コンディショニングディスクの外周側に設けられた研削部の基台の表面には、凸部と凹部とが径方向に交互に形成され、前記凸部と前記凹部とは所定の曲率半径を有する滑らかな曲線によって形成されており、前記基台上に結晶形の揃った砥粒が電着固定されていることを特徴とするＣＭＰパッドコンディショナー。   On the surface of the base of the grinding part provided on the outer peripheral side of the conditioning disk, convex parts and concave parts are alternately formed in the radial direction, and the convex parts and the concave parts are smooth curves having a predetermined radius of curvature. A CMP pad conditioner, characterized in that abrasive grains having a uniform crystal form are electrodeposited and fixed on the base. 前記凸部の曲率半径Ｒ１と、前記凹部の曲率半径Ｒ２とが、Ｒ２＝（１／１０〜１０）×Ｒ１の関係を満たすことを特徴とする請求項１記載のＣＭＰパッドコンディショナー。   2. The CMP pad conditioner according to claim 1, wherein the curvature radius R1 of the convex portion and the curvature radius R2 of the concave portion satisfy a relationship of R2 = (1/10 to 10) × R1. 前記凸部と前記凹部のピッチは、０．１ｍｍ以上であることを特徴とする請求項１または２記載のＣＭＰパッドコンディショナー。   The CMP pad conditioner according to claim 1 or 2, wherein a pitch between the convex portion and the concave portion is 0.1 mm or more. 前記凸部の最高点と前記凹部の最低点との段差は、０．００５ｍｍ以上０．０５ｍｍ以下の範囲であることを特徴とする請求項１から３のいずれかに記載のＣＭＰパッドコンディショナー。   4. The CMP pad conditioner according to claim 1, wherein a step between the highest point of the convex portion and the lowest point of the concave portion is in a range of 0.005 mm to 0.05 mm. 前記砥粒の長径と短径との比が１．１以下であることを特徴とする請求項１から４のいずれかに記載のＣＭＰパッドコンディショナー。   The CMP pad conditioner according to any one of claims 1 to 4, wherein the ratio of the major axis to the minor axis of the abrasive grains is 1.1 or less.
JP2004206774A 2004-07-14 2004-07-14 CMP pad conditioner Expired - Fee Related JP4145273B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004206774A JP4145273B2 (en) 2004-07-14 2004-07-14 CMP pad conditioner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004206774A JP4145273B2 (en) 2004-07-14 2004-07-14 CMP pad conditioner

Publications (2)

Publication Number Publication Date
JP2006026769A true JP2006026769A (en) 2006-02-02
JP4145273B2 JP4145273B2 (en) 2008-09-03

Family

ID=35893712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004206774A Expired - Fee Related JP4145273B2 (en) 2004-07-14 2004-07-14 CMP pad conditioner

Country Status (1)

Country Link
JP (1) JP4145273B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012033287A2 (en) * 2010-09-10 2012-03-15 Shinhan Diamond Ind. Co., Ltd. Cmp pad conditioner and method for manufacturing the same
JP2014233830A (en) * 2013-06-03 2014-12-15 コンフーン マテリアルズ インターナショナル カンパニー リミテッド Abrasive pad dresser and production method thereof, abrasive pad dressing device, and polishing system
CN104620356A (en) * 2012-05-04 2015-05-13 恩特格里公司 Cmp conditioner pads with superabrasive grit enhancement
WO2015122593A1 (en) * 2014-02-13 2015-08-20 새솔다이아몬드공업 주식회사 Cmp pad conditioner having dot sections and manufacturing method thereof
WO2015143278A1 (en) * 2014-03-21 2015-09-24 Entegris, Inc. Chemical mechanical planarization pad conditioner with elongated cutting edges
US10920141B2 (en) 2013-06-06 2021-02-16 Entegris, Inc. Compositions and methods for selectively etching titanium nitride

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012033287A2 (en) * 2010-09-10 2012-03-15 Shinhan Diamond Ind. Co., Ltd. Cmp pad conditioner and method for manufacturing the same
WO2012033287A3 (en) * 2010-09-10 2012-05-03 Shinhan Diamond Ind. Co., Ltd. Cmp pad conditioner and method for manufacturing the same
CN104620356A (en) * 2012-05-04 2015-05-13 恩特格里公司 Cmp conditioner pads with superabrasive grit enhancement
CN110328616A (en) * 2012-05-04 2019-10-15 恩特格里斯公司 Chemical-mechanical planarization trimmer liner with super hard abrasive enhancing
JP2014233830A (en) * 2013-06-03 2014-12-15 コンフーン マテリアルズ インターナショナル カンパニー リミテッド Abrasive pad dresser and production method thereof, abrasive pad dressing device, and polishing system
US10920141B2 (en) 2013-06-06 2021-02-16 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
WO2015122593A1 (en) * 2014-02-13 2015-08-20 새솔다이아몬드공업 주식회사 Cmp pad conditioner having dot sections and manufacturing method thereof
KR101555874B1 (en) * 2014-02-13 2015-09-30 새솔다이아몬드공업 주식회사 Conditioner having dot portion for polishing cmp pad and method of manufaturing thereof
WO2015143278A1 (en) * 2014-03-21 2015-09-24 Entegris, Inc. Chemical mechanical planarization pad conditioner with elongated cutting edges
US10293463B2 (en) 2014-03-21 2019-05-21 Entegris, Inc. Chemical mechanical planarization pad conditioner with elongated cutting edges

Also Published As

Publication number Publication date
JP4145273B2 (en) 2008-09-03

Similar Documents

Publication Publication Date Title
TWI228066B (en) Abrasive cloth dresser and method for dressing an abrasive cloth with the same
JP2005262341A (en) Cmp pad conditioner
CN104114322B (en) Method for polishing both surfaces of wafer
JP2012076220A (en) Method of polishing object to be polished, and polishing pad
CN111630213B (en) Seed crystal for growing single crystal 4H-SiC and processing method thereof
JP4624293B2 (en) CMP pad conditioner
JP2004213716A (en) Method for manufacturing glass substrate for information recording medium, and glass substrate for information recording medium manufactured by the method
WO2015059987A1 (en) Polishing composition and polishing processing method using same
JP6032155B2 (en) Wafer double-side polishing method
TW509991B (en) Method of manufacturing semiconductor wafer
JP4441552B2 (en) Diamond conditioner
JP4145273B2 (en) CMP pad conditioner
JP4999337B2 (en) CMP pad conditioner
US6537139B2 (en) Apparatus and method for ELID grinding a large-diameter workpiece to produce a mirror surface finish
JP2008238389A (en) Cmp pad conditioner
JP2007067166A (en) Chemomechanical polishing method of sic substrate
JP2006147731A (en) Polishing cloth, wafer polishing device, and method of manufacturing wafer
JP2006218577A (en) Dresser for polishing cloth
TW201524686A (en) Dressing method and dressing device
JP2002337050A (en) Cmp conditioner
JP2004050313A (en) Abrasive wheel and grinding method
JP2010052080A (en) Cmp conditioner
JP3802884B2 (en) CMP conditioner
JP2002346927A (en) Cmp conditioner
JP2006187847A (en) Cmp pad conditioner

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070119

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070522

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070720

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20071204

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080122

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20080204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080415

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080514

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080610

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080617

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4145273

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110627

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110627

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120627

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120627

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130627

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees