JP2005509176A - フォトレジスト組成物 - Google Patents
フォトレジスト組成物 Download PDFInfo
- Publication number
- JP2005509176A JP2005509176A JP2002575706A JP2002575706A JP2005509176A JP 2005509176 A JP2005509176 A JP 2005509176A JP 2002575706 A JP2002575706 A JP 2002575706A JP 2002575706 A JP2002575706 A JP 2002575706A JP 2005509176 A JP2005509176 A JP 2005509176A
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- JP
- Japan
- Prior art keywords
- optionally substituted
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- carbon atoms
- photoresist composition
- bridged
- Prior art date
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 109
- 239000000203 mixture Substances 0.000 title claims abstract description 104
- 125000004185 ester group Chemical group 0.000 claims abstract description 95
- 239000000178 monomer Substances 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 35
- 125000004432 carbon atom Chemical group C* 0.000 claims description 121
- -1 cyclic olefin Chemical class 0.000 claims description 79
- 239000002491 polymer binding agent Substances 0.000 claims description 61
- 229920005596 polymer binder Polymers 0.000 claims description 60
- 125000001424 substituent group Chemical group 0.000 claims description 50
- 125000000217 alkyl group Chemical group 0.000 claims description 47
- 229910052799 carbon Inorganic materials 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 38
- 229920000642 polymer Polymers 0.000 claims description 31
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 22
- 239000011230 binding agent Substances 0.000 claims description 20
- 125000006850 spacer group Chemical group 0.000 claims description 19
- 150000002148 esters Chemical class 0.000 claims description 17
- 229910052731 fluorine Inorganic materials 0.000 claims description 17
- 239000000654 additive Substances 0.000 claims description 16
- 125000005346 substituted cycloalkyl group Chemical group 0.000 claims description 16
- 239000011737 fluorine Substances 0.000 claims description 15
- 125000001153 fluoro group Chemical group F* 0.000 claims description 12
- 150000003839 salts Chemical class 0.000 claims description 10
- 230000003667 anti-reflective effect Effects 0.000 claims description 9
- 238000004132 cross linking Methods 0.000 claims description 9
- 238000004090 dissolution Methods 0.000 claims description 9
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000003112 inhibitor Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 6
- 239000004014 plasticizer Substances 0.000 claims description 6
- 150000003918 triazines Chemical class 0.000 claims description 6
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 4
- 239000000975 dye Substances 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 125000006001 difluoroethyl group Chemical group 0.000 claims description 2
- 125000001028 difluoromethyl group Chemical group [H]C(F)(F)* 0.000 claims description 2
- 125000003784 fluoroethyl group Chemical group [H]C([H])(F)C([H])([H])* 0.000 claims description 2
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 claims description 2
- 125000005004 perfluoroethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 claims description 2
- 125000004205 trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 claims description 2
- 239000000080 wetting agent Substances 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 238000003384 imaging method Methods 0.000 abstract description 11
- 230000005855 radiation Effects 0.000 abstract description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 36
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 26
- 150000001721 carbon Chemical group 0.000 description 20
- 238000010511 deprotection reaction Methods 0.000 description 19
- 239000010410 layer Substances 0.000 description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 150000001298 alcohols Chemical class 0.000 description 12
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 10
- 239000002253 acid Substances 0.000 description 10
- 239000006227 byproduct Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 125000002723 alicyclic group Chemical group 0.000 description 8
- 125000003709 fluoroalkyl group Chemical group 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 8
- 229920002554 vinyl polymer Polymers 0.000 description 8
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 7
- 238000003776 cleavage reaction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000003213 activating effect Effects 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 125000006239 protecting group Chemical group 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 230000007017 scission Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 125000005103 alkyl silyl group Chemical group 0.000 description 5
- 150000001412 amines Chemical group 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000001733 carboxylic acid esters Chemical group 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 229940083124 ganglion-blocking antiadrenergic secondary and tertiary amines Drugs 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920001223 polyethylene glycol Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 4
- CWQZLVPKEVXEOB-UHFFFAOYSA-N 2-(tribromomethyl)-1,3,5-triazine Chemical compound BrC(Br)(Br)C1=NC=NC=N1 CWQZLVPKEVXEOB-UHFFFAOYSA-N 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical class C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 125000002950 monocyclic group Chemical group 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 125000000547 substituted alkyl group Chemical group 0.000 description 4
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 3
- 125000004191 (C1-C6) alkoxy group Chemical group 0.000 description 3
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 3
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 description 3
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 3
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical class C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical class CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000005370 alkoxysilyl group Chemical group 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 125000005002 aryl methyl group Chemical group 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 150000003949 imides Chemical group 0.000 description 3
- 239000000543 intermediate Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 125000005699 methyleneoxy group Chemical group [H]C([H])([*:1])O[*:2] 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- HEPOEAALKWFVLE-UHFFFAOYSA-N n -((perfluorooctanesulfonyl)oxy)-5-norbornene-2,3-dicarboximide Chemical compound C1=CC2CC1C1C2C(=O)N(OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C1=O HEPOEAALKWFVLE-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- HMZGPNHSPWNGEP-UHFFFAOYSA-N octadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)C(C)=C HMZGPNHSPWNGEP-UHFFFAOYSA-N 0.000 description 3
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 description 3
- 150000003335 secondary amines Chemical class 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 150000003512 tertiary amines Chemical class 0.000 description 3
- GYXAHUXQRATWDV-UHFFFAOYSA-N (1,3-dioxoisoindol-2-yl) trifluoromethanesulfonate Chemical compound C1=CC=C2C(=O)N(OS(=O)(=O)C(F)(F)F)C(=O)C2=C1 GYXAHUXQRATWDV-UHFFFAOYSA-N 0.000 description 2
- HMPGOMIQZMSCFH-UHFFFAOYSA-N (2,5-dioxopyrrol-1-yl) trifluoromethanesulfonate Chemical compound FC(F)(F)S(=O)(=O)ON1C(=O)C=CC1=O HMPGOMIQZMSCFH-UHFFFAOYSA-N 0.000 description 2
- OKRLWHAZMUFONP-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) trifluoromethanesulfonate Chemical compound FC(F)(F)S(=O)(=O)ON1C(=O)CCC1=O OKRLWHAZMUFONP-UHFFFAOYSA-N 0.000 description 2
- 125000000027 (C1-C10) alkoxy group Chemical group 0.000 description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 2
- ZMARGGQEAJXRFP-UHFFFAOYSA-N 1-hydroxypropan-2-yl 2-methylprop-2-enoate Chemical compound OCC(C)OC(=O)C(C)=C ZMARGGQEAJXRFP-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- VBYJLUSEJRSZPL-UHFFFAOYSA-N 2-(difluoromethylidene)-4,4,5,5,6-pentafluoro-6-(trifluoromethyl)-1,3-dioxane Chemical compound FC(F)=C1OC(F)(F)C(F)(F)C(F)(C(F)(F)F)O1 VBYJLUSEJRSZPL-UHFFFAOYSA-N 0.000 description 2
- QTUVQQKHBMGYEH-UHFFFAOYSA-N 2-(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC=NC=N1 QTUVQQKHBMGYEH-UHFFFAOYSA-N 0.000 description 2
- VLSRKCIBHNJFHA-UHFFFAOYSA-N 2-(trifluoromethyl)prop-2-enoic acid Chemical compound OC(=O)C(=C)C(F)(F)F VLSRKCIBHNJFHA-UHFFFAOYSA-N 0.000 description 2
- NJBCRXCAPCODGX-UHFFFAOYSA-N 2-methyl-n-(2-methylpropyl)propan-1-amine Chemical compound CC(C)CNCC(C)C NJBCRXCAPCODGX-UHFFFAOYSA-N 0.000 description 2
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical class C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- COCLLEMEIJQBAG-UHFFFAOYSA-N 8-methylnonyl 2-methylprop-2-enoate Chemical compound CC(C)CCCCCCCOC(=O)C(C)=C COCLLEMEIJQBAG-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 102100026735 Coagulation factor VIII Human genes 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- 101000911390 Homo sapiens Coagulation factor VIII Proteins 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 101710134866 Quinone reductase Proteins 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 2
- NAXKFVIRJICPAO-LHNWDKRHSA-N [(1R,3S,4R,6R,7R,9S,10S,12R,13S,15S,16R,18S,19S,21S,22S,24S,25S,27S,28R,30R,31R,33S,34S,36R,37R,39R,40S,42R,44R,46S,48S,50R,52S,54S,56S)-46,48,50,52,54,56-hexakis(hydroxymethyl)-2,8,14,20,26,32,38,43,45,47,49,51,53,55-tetradecaoxa-5,11,17,23,29,35,41-heptathiapentadecacyclo[37.3.2.23,7.29,13.215,19.221,25.227,31.233,37.04,6.010,12.016,18.022,24.028,30.034,36.040,42]hexapentacontan-44-yl]methanol Chemical compound OC[C@H]1O[C@H]2O[C@H]3[C@H](CO)O[C@H](O[C@H]4[C@H](CO)O[C@H](O[C@@H]5[C@@H](CO)O[C@H](O[C@H]6[C@H](CO)O[C@H](O[C@H]7[C@H](CO)O[C@@H](O[C@H]8[C@H](CO)O[C@@H](O[C@@H]1[C@@H]1S[C@@H]21)[C@@H]1S[C@H]81)[C@H]1S[C@@H]71)[C@H]1S[C@H]61)[C@H]1S[C@@H]51)[C@H]1S[C@@H]41)[C@H]1S[C@H]31 NAXKFVIRJICPAO-LHNWDKRHSA-N 0.000 description 2
- 150000001241 acetals Chemical group 0.000 description 2
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- 230000000996 additive effect Effects 0.000 description 2
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- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 2
- SJNALLRHIVGIBI-UHFFFAOYSA-N allyl cyanide Chemical compound C=CCC#N SJNALLRHIVGIBI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004104 aryloxy group Chemical group 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 125000002619 bicyclic group Chemical group 0.000 description 2
- FYGUSUBEMUKACF-UHFFFAOYSA-N bicyclo[2.2.1]hept-2-ene-5-carboxylic acid Chemical compound C1C2C(C(=O)O)CC1C=C2 FYGUSUBEMUKACF-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- BHQCQFFYRZLCQQ-OELDTZBJSA-N cholic acid Chemical class C([C@H]1C[C@H]2O)[C@H](O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H]([C@@H](CCC(O)=O)C)[C@@]2(C)[C@@H](O)C1 BHQCQFFYRZLCQQ-OELDTZBJSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- MGNZXYYWBUKAII-UHFFFAOYSA-N cyclohexa-1,3-diene Chemical compound C1CC=CC=C1 MGNZXYYWBUKAII-UHFFFAOYSA-N 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 description 2
- KXGVEGMKQFWNSR-UHFFFAOYSA-N deoxycholic acid Natural products C1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)C(O)C2 KXGVEGMKQFWNSR-UHFFFAOYSA-N 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- GMSCBRSQMRDRCD-UHFFFAOYSA-N dodecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCOC(=O)C(C)=C GMSCBRSQMRDRCD-UHFFFAOYSA-N 0.000 description 2
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- ZNAOFAIBVOMLPV-UHFFFAOYSA-N hexadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCOC(=O)C(C)=C ZNAOFAIBVOMLPV-UHFFFAOYSA-N 0.000 description 1
- WNLRTRBMVRJNCN-UHFFFAOYSA-N hexanedioic acid Natural products OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 1
- OAYMNBMXGBFHKX-UHFFFAOYSA-N hexatriacontyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCOC(=O)C(C)=C OAYMNBMXGBFHKX-UHFFFAOYSA-N 0.000 description 1
- LNCPIMCVTKXXOY-UHFFFAOYSA-N hexyl 2-methylprop-2-enoate Chemical compound CCCCCCOC(=O)C(C)=C LNCPIMCVTKXXOY-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- NSPJNIDYTSSIIY-UHFFFAOYSA-N methoxy(methoxymethoxy)methane Chemical compound COCOCOC NSPJNIDYTSSIIY-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LVCAUABGOWBVQM-UHFFFAOYSA-N n',n'-dimethyl-n-propylpropane-1,3-diamine Chemical compound CCCNCCCN(C)C LVCAUABGOWBVQM-UHFFFAOYSA-N 0.000 description 1
- OMNKZBIFPJNNIO-UHFFFAOYSA-N n-(2-methyl-4-oxopentan-2-yl)prop-2-enamide Chemical compound CC(=O)CC(C)(C)NC(=O)C=C OMNKZBIFPJNNIO-UHFFFAOYSA-N 0.000 description 1
- CXMXRPHRNRROMY-UHFFFAOYSA-N n-Decanedioic acid Natural products OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 1
- GVBMMNAPRZDGEY-UHFFFAOYSA-N n-[2-(diethylamino)ethyl]-2-methylprop-2-enamide Chemical compound CCN(CC)CCNC(=O)C(C)=C GVBMMNAPRZDGEY-UHFFFAOYSA-N 0.000 description 1
- DCBBWYIVFRLKCD-UHFFFAOYSA-N n-[2-(dimethylamino)ethyl]-2-methylprop-2-enamide Chemical compound CN(C)CCNC(=O)C(C)=C DCBBWYIVFRLKCD-UHFFFAOYSA-N 0.000 description 1
- VNLHOYZHPQDOMS-UHFFFAOYSA-N n-[3-(diethylamino)propyl]-2-methylprop-2-enamide Chemical compound CCN(CC)CCCNC(=O)C(C)=C VNLHOYZHPQDOMS-UHFFFAOYSA-N 0.000 description 1
- JILYLRLSDROPIF-UHFFFAOYSA-N n-[4-(diethylamino)butyl]-2-methylprop-2-enamide Chemical compound CCN(CC)CCCCNC(=O)C(C)=C JILYLRLSDROPIF-UHFFFAOYSA-N 0.000 description 1
- LKZTYRFSAJOGIT-UHFFFAOYSA-N n-[4-(dimethylamino)butyl]-2-methylprop-2-enamide Chemical compound CN(C)CCCCNC(=O)C(C)=C LKZTYRFSAJOGIT-UHFFFAOYSA-N 0.000 description 1
- ZQXSMRAEXCEDJD-UHFFFAOYSA-N n-ethenylformamide Chemical compound C=CNC=O ZQXSMRAEXCEDJD-UHFFFAOYSA-N 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical class C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 229930014626 natural product Natural products 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- YGPZXPHFJSYIKP-UHFFFAOYSA-N nonadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCCOC(=O)C(C)=C YGPZXPHFJSYIKP-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N o-dicarboxybenzene Natural products OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- NZIDBRBFGPQCRY-UHFFFAOYSA-N octyl 2-methylprop-2-enoate Chemical compound CCCCCCCCOC(=O)C(C)=C NZIDBRBFGPQCRY-UHFFFAOYSA-N 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000906 photoactive agent Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical compound CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 150000003342 selenium Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003637 steroidlike Effects 0.000 description 1
- 125000004426 substituted alkynyl group Chemical group 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical group [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical class [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- 125000005537 sulfoxonium group Chemical group 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- KEROTHRUZYBWCY-UHFFFAOYSA-N tridecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCOC(=O)C(C)=C KEROTHRUZYBWCY-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
- KRLHYNPADOCLAJ-UHFFFAOYSA-N undecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCOC(=O)C(C)=C KRLHYNPADOCLAJ-UHFFFAOYSA-N 0.000 description 1
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N vinyl ethyl ether Natural products CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Steroid Compounds (AREA)
Abstract
Description
1.フッ素化アルコールを保護基で置換するのに使用される化学は、レジスト原料を製造するための商業的に実現性のあるプロセスを提供するために充分な容易性をもって達成されるべきである。
2.酸触媒脱保護反応は、レジストのガラス転移温度付近で又はそれより下で達成されるのに充分簡便であるべきであるが、脱保護生成物が非揮発性でない限り露光の過程で深刻な脱保護を蒙るほど簡便であってはならない。過剰に簡便であり、揮発性生成物をもたらす脱保護は、多くの露光に際し目的の露光レンズ表面を汚染することができる。
3.脱保護反応は、解像力を制限し、現像の過程でレジストパターンの崩壊と関連し得る機械的ひずみを避けるためにレジストフィルムの最小の収縮を生じるような仕様で起こるべきである。
4.脱保護基は、露光波長において最小の吸光度を発揮すべきである。
5.脱保護反応からの副生成物は、レジストイメージの引き続きの現像を妨げるべきでない。加えて、現像の後で及び引き続いて、レジスト脱保護副生成物は、欠陥の原因となり得る残基をデバイス基体上に残すべきでない。
Claims (36)
- ポリマーバインダー及びフォト活性成分を含むフォトレジスト組成物であって、ここで該ポリマーバインダーは重合単位として電気陰性置換基及びエステル基を有するモノマーを含み、ここで該モノマー基は該エステル基に直接結合した脱離基を含み、ここで該脱離基は、a)少なくとも二つの炭素原子が第二級、第三級及び第四級炭素原子から選択される、6以上の炭素原子を有する任意に置換された非環式アルキル部位であって、該エステル基が直接第四級炭素原子に結合されているもの;b)任意に置換されたフェンキル;c)任意に置換されたフェニル;d)任意に置換された3,2,0橋かけ系;e)任意に置換された橋かけヘテロ脂環式基;f)3又は4環炭素原子を有する任意に置換されたシクロアルキル基;及び(g)任意に置換された2,2,1‐橋かけ系から選択される、フォトレジスト組成物。
- 該電気陰性置換基が1以上のフッ素原子を含む請求項1に記載のフォトレジスト組成物。
- 該電気陰性置換基がフッ素又はフルオロ(C1〜C4)アルキルである請求項1に記載のフォトレジスト組成物。
- 該電気陰性置換基がフルオロメチル、ジフルオロメチル、トリフルオロメチル、フルオロエチル、ジフルオロエチル、トリフルオロエチル及びペルフルオロエチルからなる群から選択される請求項3に記載のフォトレジスト組成物。
- 該ポリマーバインダーが更に重合単位として1以上の環式オレフィンモノマーを含む請求項1に記載のフォトレジスト組成物。
- 該環式オレフィンモノマーが(C5〜C10)環式オレフィンである請求項5に記載のフォトレジスト組成物。
- 該フォト活性成分がハロゲン化トリアジン、オニウム塩、スルホン化エステル及びハロゲン化スルホニルオキシジカルボキシイミドからなる群から選択されるフォト酸発生剤である請求項1に記載のフォトレジスト組成物。
- 更に1以上の塩基性添加剤、溶解阻害剤、耐光条剤、可塑剤、スピード促進剤、充填剤、染料又は湿潤剤を含む請求項1に記載のフォトレジスト組成物。
- a)重合単位として電気陰性置換基及びエステル基を有するモノマーを含むバインダーポリマーを調製し、ここでそのモノマー基はエステル基に直接結合した脱離基を含み、ここで該脱離基は、少なくとも二つの炭素原子が第二級、第三級及び第四級炭素原子から選択される、6以上の炭素原子を有する任意に置換された非環式アルキル部位であって、該エステル基が直接第四級炭素原子に結合されているもの;任意に置換されたフェンキル;任意に置換されたフェニル;任意に置換された3,2,0橋かけ系;任意に置換された橋かけヘテロ脂環式基;3又は4環炭素原子を有する任意に置換されたシクロアルキル基;及び任意に置換された2,2,1‐橋かけ系から選択される;及びb)該バインダーポリマーをフォト活性成分と配合する工程を含む、化学増幅フォトレジストを製造するための方法。
- 該フォト活性成分がハロゲン化トリアジン、オニウム塩、スルホン化エステル及びハロゲン化スルホニルオキシジカルボキシイミドからなる群から選択されるフォト酸発生剤である請求項10に記載の方法。
- 該電気陰性置換基が1以上のフッ素原子を含む請求項10に記載の方法。
- 該電気陰性置換基がフッ素又はフルオロ(C1〜C4)アルキルである請求項10に記載の方法。
- 該ポリマーバインダーが更に重合単位として1以上の環式オレフィンモノマーを含む請求項10に記載の方法。
- 更に脱離基とエステル基との間に挿入されるスペーサーを含む請求項10に記載の方法。
- a)基体にポリマーバインダー及びフォト活性成分を含むフォトレジスト組成物の層を塗布し、ここで該ポリマーバインダーは重合単位として電気陰性置換基及びエステル基を有するモノマーを含み、ここで該モノマー基は該エステル基に直接結合した脱離基を含み、ここで該脱離基は少なくとも二つの炭素原子が第二級、第三級及び第四級炭素原子から選択される、6以上の炭素原子を有する任意に置換された非環式アルキル部位であって、該エステル基が直接第四級炭素原子に結合されているもの;任意に置換されたフェンキル;任意に置換されたフェニル;任意に置換された3,2,0橋かけ系;任意に置換された橋かけヘテロ脂環式基;3又は4環炭素原子を有する任意に置換されたシクロアルキル基;及び任意に置換された2,2,1‐橋かけ系から選択される;及びb)フォトレジストを露光し及び現像してレリーフイメージを提供する工程を含む、フォトレジストレリーフイメージを形成する方法。
- 該フォト活性成分がハロゲン化トリアジン、オニウム塩、スルホン化エステル及びハロゲン化スルホニルオキシジカルボキシイミドからなる群から選択されるフォト酸発生剤である請求項17に記載の方法。
- 該電気陰性置換基が1以上のフッ素原子を含む請求項17に記載の方法。
- 該電気陰性置換基がフッ素又はフルオロ(C1〜C4)アルキルである請求項17に記載の方法。
- 該ポリマーバインダーが更に重合単位として1以上の環式オレフィンモノマーを含む請求項17に記載の方法。
- 更にフォトレジスト組成物の層を塗布する工程の前に基体上に反射防止剤組成物の層を配置する工程を含む請求項17に記載の方法。
- 更に該フォトレジスト組成物層上に反射防止剤組成物の層を配置する工程を含む請求項17に記載の方法。
- 更に該脱離基と該エステル基との間に挿入されるスペーサーを含む請求項17に記載の方法。
- ポリマーバインダー及びフォト活性成分を含むフォトレジスト組成物の層を含むコーティングを含む電子デバイス基体であって、ここで該ポリマーバインダーは重合単位として電気陰性置換基及びエステル基を有するモノマーを含み、ここで該モノマー基は該エステル基に直接結合した脱離基を含み、ここで、該脱離基は、a)少なくとも二つの炭素原子が第二級、第三級及び第四級炭素原子から選択される、6以上の炭素原子を有する任意に置換された非環式アルキル部位、及びここでそのエステル基は直接第四級炭素原子に結合される;b)任意に置換されたフェンキル;c)任意に置換されたフェニル;d)任意に置換された3,2,0橋かけ系;e)任意に置換された橋かけヘテロ脂環式基;f)3又は4環炭素原子を有する任意に置換されたシクロアルキル基;及び(g)任意に置換された2,2,1‐橋かけ系から選択される。
- 更に該脱離基と該エステル基との間に挿入されるスペーサーを含む請求項26に記載のデバイス。
- 該電気陰性置換基が1以上のフッ素原子を含む請求項26に記載のデバイス。
- 該電気陰性置換基がフッ素又はフルオロ(C1〜C4)アルキルである請求項26に記載のデバイス。
- 更に該基体と該フォトレジスト組成物層との間に挿入された反射防止組成物の層を含む請求項26に記載のデバイス。
- 更にフォトレジスト組成物の層上に配置された反射防止組成物の層を含む請求項26に記載のデバイス。
- a)ポリマーバインダー及びフォト活性成分を含むフォトレジスト組成物の層を電子デバイス基体上に配置し、ここで該ポリマーバインダーは重合単位として電気陰性置換基及びエステル基を有するモノマーを含み、ここで該モノマー基は該エステル基に直接結合した脱離基を含み、ここで該脱離基は、少なくとも二つの炭素原子が第二級、第三級及び第四級炭素原子から選択される、6以上の炭素原子を有する任意に置換された非環式アルキル部位であって、該エステル基が直接第四級炭素原子に結合されているもの;任意に置換されたフェンキル;任意に置換されたフェニル;任意に置換された3,2,0橋かけ系;任意に置換された橋かけヘテロ脂環式基;3又は4環炭素原子を有する任意に置換されたシクロアルキル基;及び任意に置換された2,2,1‐橋かけ系から選択される;b)フォトレジストを露光し及び現像してレリーフイメージを形成し;c)基体中でフィーチャーをエッチングし;及びd)該フォトレジスト組成物を除去する工程を含む、電子デバイスを製造する方法。
- 更に該フォトレジスト組成物層を塗布する工程の前に基体上に反射防止組成物の層を配置する工程を含む請求項32に記載の方法。
- 更に該フォトレジスト組成物層上に反射防止組成物の層を配置する工程を含む請求項32に記載の方法。
- 更に該脱離基と該エステル基との間に挿入されるスペーサーを含む請求項32に記載の方法。
- ポリマーバインダー及びフォト活性成分を含むフォトレジスト組成物であって、ここで該ポリマーバインダーは重合単位として電気陰性置換基及びエステル基を有するモノマーを含み、ここでスペーサーが該エステル基と該脱離基との間に挿入され、ここで該脱離基は、a)少なくとも二つの炭素原子が第二級、第三級及び第四級炭素原子から選択される、6以上の炭素原子を有する任意に置換された非環式アルキル部位であって、該エステル基が直接第四級炭素原子に結合されているもの;b)任意に置換されたフェンキル;c)任意に置換されたフェニル;d)任意に置換された3,2,0橋かけ系;e)任意に置換された橋かけヘテロ脂環式基;f)3又は4環炭素原子を有する任意に置換されたシクロアルキル基;及び(g)任意に置換された2,2,1‐橋かけ系から選択される、フォトレジスト組成物。
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US27787401P | 2001-03-22 | 2001-03-22 | |
PCT/US2002/007940 WO2002077709A2 (en) | 2001-03-22 | 2002-03-14 | Photoresist composition |
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CN1527136B (zh) * | 2003-03-05 | 2014-02-26 | 希普利公司 | 光致抗蚀剂组合物 |
WO2004088428A1 (ja) * | 2003-03-28 | 2004-10-14 | Tokyo Ohka Kogyo Co. Ltd. | ホトレジスト組成物及びそれを用いたレジストパターン形成方法 |
JP4644458B2 (ja) * | 2003-09-30 | 2011-03-02 | 富士フイルム株式会社 | 平版印刷版原版および平版印刷方法 |
US7442487B2 (en) * | 2003-12-30 | 2008-10-28 | Intel Corporation | Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists |
US7608390B2 (en) * | 2006-08-04 | 2009-10-27 | International Business Machines Corporation | Top antireflective coating composition containing hydrophobic and acidic groups |
JP5035560B2 (ja) * | 2007-07-04 | 2012-09-26 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
CN101802711B (zh) * | 2007-07-30 | 2014-12-03 | 布鲁尔科技公司 | 用于光刻法的可非共价交联的材料 |
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US20030027076A1 (en) | 2003-02-06 |
WO2002077709A2 (en) | 2002-10-03 |
US6855475B2 (en) | 2005-02-15 |
JP4554889B2 (ja) | 2010-09-29 |
WO2002077709A3 (en) | 2003-02-27 |
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