JP2005354061A - 熱伝導率の高い垂直共振器型面発光レーザ - Google Patents
熱伝導率の高い垂直共振器型面発光レーザ Download PDFInfo
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- JP2005354061A JP2005354061A JP2005166540A JP2005166540A JP2005354061A JP 2005354061 A JP2005354061 A JP 2005354061A JP 2005166540 A JP2005166540 A JP 2005166540A JP 2005166540 A JP2005166540 A JP 2005166540A JP 2005354061 A JP2005354061 A JP 2005354061A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】 本発明の光装置は、既知の波長の光を発生するように適合されている発光層(40)と、発光層(40)の上方の上部反射器(20)と、発光層(40)の下方の下部反射器(30)と、発光層(40)と下部反射器(30)の間及び発光層(40)と上部反射器(20)の間の少なくともどちらか一方の高熱伝導率(HTC)層(102)とからなることを特徴とする。
【選択図】 図4
Description
AlXGa(1-X)As
ここで、Xはアルミニウムとガリウムの組成比を画定する。例えば、Xが零(0)の場合、構成にアルミニウムが含まれず、組成はGaAsに限定される。Xが1の場合、構成にガリウムが含まれず、組成はAlAsに限定される。例えば、Xが0.3の場合、構成はAl(0.3)Ga(0.7)Asと表わすことができる。図1において、層が対をなして形成される層対の形成を、下部反射器30内の単一の層対32を利用して示す。層対32は、Al(0.2)Ga(0.8)(0.2の組成比を有する)の第1の層31と、Al(0.9)Ga(0.1)(0.9の組成比を有する)の第2の層33を含む。
30 下部反射器
40 活性領域
42 発光層
43 活性部分
50 基板
52 電極
54 電極
56 開口部
58 光
60 電流閉じ込め障壁
100 発光装置
102 HTC層
106 接触層
120 HTC下部反射器
Claims (9)
- 既知の波長の光を発生するように適合されている発光層(40)と、
前記発光層(40)の上方の上部反射器(20)と、
前記発光層(40)の下方の下部反射器(30)と、
前記発光層(40)と前記下部反射器(30)の間及び前記発光層(40)と前記上部反射器(20)の間の少なくともどちらか一方の高熱伝導率(HTC)層(102)と
からなる発光装置。 - 前記上部反射器(20)が分布ブラッグ反射器(DBR)である請求項1に記載の発光装置。
- 前記HTC層(102)の厚みが半波長の整数倍である請求項1又は2に記載の発光装置。
- 前記HTC層(102)が、アルミニウム砒素、ガリウム砒素及びインジウムリンからなる群より選択された要素を含む請求項1又は2に記載の発光装置。
- さらに、電極(52a)と前記発光層(40)の間に電気的接触をもたらすように適合されている接触層(106)を含む請求項1に記載の発光装置。
- さらに、前記接触層(106)に関連したエッチング停止層を含む請求項5に記載の発光装置。
- 既知の波長の光を発生するように適合されている発光層(40)と、
前記発光層(40)の上方の上部反射器(20)と、
前記発光層(40)の下方の高熱伝導率(HTC)下部反射器(30a)と
からなる発光装置。 - 前記HTC下部反射器(120)が、少なくとも1つの分布ブラッグ反射器(DBR)層対を含む請求項7に記載の発光装置。
- 前記分布ブラッグ反射器(DBR)対が高熱伝導率材料を含む請求項8に記載の発光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/862753 | 2004-06-07 | ||
US10/862,753 US7372886B2 (en) | 2004-06-07 | 2004-06-07 | High thermal conductivity vertical cavity surface emitting laser (VCSEL) |
Publications (2)
Publication Number | Publication Date |
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JP2005354061A true JP2005354061A (ja) | 2005-12-22 |
JP5063869B2 JP5063869B2 (ja) | 2012-10-31 |
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JP2005166540A Expired - Fee Related JP5063869B2 (ja) | 2004-06-07 | 2005-06-07 | 熱伝導率の高い垂直共振器型面発光レーザ |
Country Status (4)
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US (2) | US7372886B2 (ja) |
JP (1) | JP5063869B2 (ja) |
CN (1) | CN100574026C (ja) |
DE (1) | DE102005010933B4 (ja) |
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WO2007089042A1 (en) * | 2006-02-03 | 2007-08-09 | Ricoh Company, Ltd. | Surface-emitting laser device and surface-emitting laser array including same |
JP2007235090A (ja) * | 2006-02-03 | 2007-09-13 | Ricoh Co Ltd | 面発光レーザ素子、それを備えた面発光レーザアレイ、面発光レーザアレイを備えた画像形成装置、面発光レーザ素子または面発光レーザアレイを備えた光ピックアップ装置、面発光レーザ素子または面発光レーザアレイを備えた光送信モジュール、面発光レーザ素子または面発光レーザアレイを備えた光送受信モジュールおよび面発光レーザ素子または面発光レーザアレイを備えた光通信システム。 |
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- 2005-06-07 CN CNB2005100752165A patent/CN100574026C/zh not_active Expired - Fee Related
- 2005-06-07 JP JP2005166540A patent/JP5063869B2/ja not_active Expired - Fee Related
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2006
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Also Published As
Publication number | Publication date |
---|---|
CN100574026C (zh) | 2009-12-23 |
DE102005010933B4 (de) | 2008-07-03 |
US20060274805A1 (en) | 2006-12-07 |
JP5063869B2 (ja) | 2012-10-31 |
US20050271113A1 (en) | 2005-12-08 |
CN1707889A (zh) | 2005-12-14 |
US7372886B2 (en) | 2008-05-13 |
DE102005010933A1 (de) | 2005-12-29 |
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