JP2005303044A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2005303044A JP2005303044A JP2004117798A JP2004117798A JP2005303044A JP 2005303044 A JP2005303044 A JP 2005303044A JP 2004117798 A JP2004117798 A JP 2004117798A JP 2004117798 A JP2004117798 A JP 2004117798A JP 2005303044 A JP2005303044 A JP 2005303044A
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- Prior art keywords
- oxide film
- semiconductor device
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- manufacturing
- annealing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 15
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 54
- 238000011282 treatment Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 11
- 230000005684 electric field Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- 239000012299 nitrogen atmosphere Substances 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000012300 argon atmosphere Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28238—Making the insulator with sacrificial oxide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Abstract
【解決手段】 STIの肩部における角張った箇所を丸める熱処理を、1000℃以上の高温で長時間、希ガス雰囲気中で行う。肩部を丸くし、希ガスの採用により窒素によるシリコン界面への影響をなくすことでゲート酸化膜の局所的な膜厚のバラツキをなくし、ゲート酸化膜の信頼性を向上させることができる半導体装置の製造方法が得られる。
【選択図】 図1
Description
2 パッド酸化膜
3 窒化膜
4 トレンチ
5 内壁酸化膜
6 埋設酸化膜
7 犠牲酸化膜
8 ゲート酸化膜
9 ディポッド
Claims (8)
- トレンチにより分離された半導体装置の製造方法において、埋設酸化膜成長後からゲートポリシリ成長前までのいずれかの工程において希ガスを含む雰囲気中でアニール処理することを特徴とする半導体装置の製造方法。
- 前記希ガスは、アルゴン、ネオン、ヘリウムであることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記アニール処理は、温度は1000℃以上、1200℃以下であり、時間は10分以上、5時間以下であることを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記アニール処理は、シリコン基板を露出させないで、絶縁膜で覆った状態で行うことを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置の製造方法。
- 前記アニール処理は、チャンネル注入直前に行うことを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置の製造方法。
- 前記アニール処理は、ゲートポリシリ成長直前に行うことを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置の製造方法。
- 前記アニール処理は、CMP直前に行うことを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置の製造方法。
- 前記アニール処理は、パッド酸化膜除去直前に行うことを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004117798A JP4577680B2 (ja) | 2004-04-13 | 2004-04-13 | 半導体装置の製造方法 |
US11/103,613 US20050227452A1 (en) | 2004-04-13 | 2005-04-12 | Method for producing semiconductor device |
CN200510064979.XA CN1684242A (zh) | 2004-04-13 | 2005-04-13 | 半导体器件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004117798A JP4577680B2 (ja) | 2004-04-13 | 2004-04-13 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005303044A true JP2005303044A (ja) | 2005-10-27 |
JP4577680B2 JP4577680B2 (ja) | 2010-11-10 |
Family
ID=35061100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004117798A Expired - Fee Related JP4577680B2 (ja) | 2004-04-13 | 2004-04-13 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20050227452A1 (ja) |
JP (1) | JP4577680B2 (ja) |
CN (1) | CN1684242A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102332400A (zh) * | 2011-07-28 | 2012-01-25 | 上海宏力半导体制造有限公司 | 半导体器件的形成方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7432148B2 (en) * | 2005-08-31 | 2008-10-07 | Micron Technology, Inc. | Shallow trench isolation by atomic-level silicon reconstruction |
US7838353B2 (en) * | 2008-08-12 | 2010-11-23 | International Business Machines Corporation | Field effect transistor with suppressed corner leakage through channel material band-edge modulation, design structure and method |
US8125037B2 (en) | 2008-08-12 | 2012-02-28 | International Business Machines Corporation | Field effect transistor with channel region edge and center portions having different band structures for suppressed corner leakage |
CN102446762B (zh) * | 2010-10-13 | 2014-02-05 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管及其制作方法 |
US9945048B2 (en) * | 2012-06-15 | 2018-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09205140A (ja) * | 1995-11-21 | 1997-08-05 | Toshiba Corp | 素子分離半導体基板およびその製造方法 |
JPH1079421A (ja) * | 1996-09-05 | 1998-03-24 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH1197523A (ja) * | 1997-07-31 | 1999-04-09 | Lucent Technol Inc | デバイス作製プロセス |
JP2000012674A (ja) * | 1998-06-19 | 2000-01-14 | Toshiba Corp | 半導体装置の製造方法および素子分離方法 |
JP2001144170A (ja) * | 1999-11-11 | 2001-05-25 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2002057211A (ja) * | 2000-08-15 | 2002-02-22 | Seiko Epson Corp | トレンチ素子分離領域を有する半導体装置の製造方法 |
JP2004006660A (ja) * | 2002-03-26 | 2004-01-08 | Fuji Electric Holdings Co Ltd | 半導体装置の製造方法 |
JP2004273971A (ja) * | 2003-03-12 | 2004-09-30 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
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EP0562207B1 (en) * | 1992-03-27 | 1996-06-05 | International Business Machines Corporation | Method of forming thin film pseudo-planar PFET devices and structures resulting therefrom |
US5834358A (en) * | 1996-11-12 | 1998-11-10 | Micron Technology, Inc. | Isolation regions and methods of forming isolation regions |
US6322634B1 (en) * | 1997-01-27 | 2001-11-27 | Micron Technology, Inc. | Shallow trench isolation structure without corner exposure |
US6097076A (en) * | 1997-03-25 | 2000-08-01 | Micron Technology, Inc. | Self-aligned isolation trench |
US5849643A (en) * | 1997-05-23 | 1998-12-15 | Advanced Micro Devices, Inc. | Gate oxidation technique for deep sub quarter micron transistors |
KR100261018B1 (ko) * | 1997-09-25 | 2000-08-01 | 윤종용 | 반도체장치의트렌치격리형성방법 |
US6087243A (en) * | 1997-10-21 | 2000-07-11 | Advanced Micro Devices, Inc. | Method of forming trench isolation with high integrity, ultra thin gate oxide |
TW389982B (en) * | 1998-01-26 | 2000-05-11 | United Microelectronics Corp | Method of manufacturing shallow trench isolation |
KR100275908B1 (ko) * | 1998-03-02 | 2000-12-15 | 윤종용 | 집적 회로에 트렌치 아이솔레이션을 형성하는방법 |
US5989978A (en) * | 1998-07-16 | 1999-11-23 | Chartered Semiconductor Manufacturing, Ltd. | Shallow trench isolation of MOSFETS with reduced corner parasitic currents |
KR100292616B1 (ko) * | 1998-10-09 | 2001-07-12 | 윤종용 | 트렌치격리의제조방법 |
KR100338767B1 (ko) * | 1999-10-12 | 2002-05-30 | 윤종용 | 트렌치 소자분리 구조와 이를 갖는 반도체 소자 및 트렌치 소자분리 방법 |
US6277697B1 (en) * | 1999-11-12 | 2001-08-21 | United Microelectronics Corp. | Method to reduce inverse-narrow-width effect |
US6413828B1 (en) * | 2000-03-08 | 2002-07-02 | International Business Machines Corporation | Process using poly-buffered STI |
US6455382B1 (en) * | 2001-05-03 | 2002-09-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-step method for forming sacrificial silicon oxide layer |
JP3597495B2 (ja) * | 2001-08-31 | 2004-12-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
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JP4585510B2 (ja) * | 2003-03-07 | 2010-11-24 | 台湾積體電路製造股▲ふん▼有限公司 | シャロートレンチアイソレーションプロセス |
KR100505068B1 (ko) * | 2003-07-05 | 2005-07-29 | 삼성전자주식회사 | 반도체 소자의 다중 게이트 산화막 및 이를 포함하는게이트 전극 형성방법 |
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-
2004
- 2004-04-13 JP JP2004117798A patent/JP4577680B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-12 US US11/103,613 patent/US20050227452A1/en not_active Abandoned
- 2005-04-13 CN CN200510064979.XA patent/CN1684242A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09205140A (ja) * | 1995-11-21 | 1997-08-05 | Toshiba Corp | 素子分離半導体基板およびその製造方法 |
JPH1079421A (ja) * | 1996-09-05 | 1998-03-24 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH1197523A (ja) * | 1997-07-31 | 1999-04-09 | Lucent Technol Inc | デバイス作製プロセス |
JP2000012674A (ja) * | 1998-06-19 | 2000-01-14 | Toshiba Corp | 半導体装置の製造方法および素子分離方法 |
JP2001144170A (ja) * | 1999-11-11 | 2001-05-25 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2002057211A (ja) * | 2000-08-15 | 2002-02-22 | Seiko Epson Corp | トレンチ素子分離領域を有する半導体装置の製造方法 |
JP2004006660A (ja) * | 2002-03-26 | 2004-01-08 | Fuji Electric Holdings Co Ltd | 半導体装置の製造方法 |
JP2004273971A (ja) * | 2003-03-12 | 2004-09-30 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102332400A (zh) * | 2011-07-28 | 2012-01-25 | 上海宏力半导体制造有限公司 | 半导体器件的形成方法 |
CN102332400B (zh) * | 2011-07-28 | 2016-06-01 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US20050227452A1 (en) | 2005-10-13 |
CN1684242A (zh) | 2005-10-19 |
JP4577680B2 (ja) | 2010-11-10 |
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