JP2005268709A - Surface treatment apparatus and surface treatment method - Google Patents

Surface treatment apparatus and surface treatment method Download PDF

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JP2005268709A
JP2005268709A JP2004082737A JP2004082737A JP2005268709A JP 2005268709 A JP2005268709 A JP 2005268709A JP 2004082737 A JP2004082737 A JP 2004082737A JP 2004082737 A JP2004082737 A JP 2004082737A JP 2005268709 A JP2005268709 A JP 2005268709A
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surface treatment
treatment apparatus
discharge
processed
workpiece
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Hideo Nakada
英男 中田
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Seiko Epson Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface treatment apparatus and a surface treatment method for enabling the execution of a surface treatment on an article by plasma discharging under an ambient pressure or a pressure close to it in a stable and consecutive manner. <P>SOLUTION: In the surface treatment apparatus, a plasma is generated by an electric discharge from an applying electrode 3 under a pressure close to an ambient temperature, and a transfer part 2 bearing the article 1 is passed through a discharge section to execute the surface treatment on the article 1. The periphery of the article 1 is encircled with a height adjusting part 2b as thick as the article 1. The transfer part 2 for transferring the article 1 consists of a transfer base 2a made of a conductive material, and the height adjusting part 2b mounted on the transfer base 2a. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、大気圧近傍下において、プラズマを用いてガラス基板やシリコンウェハーなどの被処理物の表面処理を行う、表面処理装置及び表面処理方法に関するものである。   The present invention relates to a surface treatment apparatus and a surface treatment method for performing surface treatment of an object to be processed such as a glass substrate or a silicon wafer using plasma under the vicinity of atmospheric pressure.

大気圧近傍下におけるプラズマ発生方式の一つである平行平板方式においては、搬送ローラなどで被処理物を搬送し、対向する電極間で発生する放電によって表面処理を行っているが、この場合、被処理物と接地電極は非接触の状態にある。このような構造により、大型のガラス基板などの表面処理を行う場合であっても、被処理物を走査させることで、小さな電極で大面積の処理を可能としている（例えば、特許文献１参照）。   In the parallel plate method, which is one of the plasma generation methods under the vicinity of atmospheric pressure, the object to be processed is conveyed by a conveying roller or the like, and the surface treatment is performed by the discharge generated between the opposing electrodes. The workpiece and the ground electrode are not in contact with each other. With such a structure, even when a surface treatment is performed on a large glass substrate or the like, a large area can be processed with a small electrode by scanning an object to be processed (see, for example, Patent Document 1). .

また、同様な平行平板方式において、搬送機構をもったテーブルが対向電極となっている場合があり、この場合に、接地電極は搬送テーブルから装置筐体を介して高周波電源のアースに接続されている（例えば、特許文献２参照）。   In a similar parallel plate system, a table having a transport mechanism may be a counter electrode. In this case, the ground electrode is connected from the transport table to the ground of the high-frequency power source through the device housing. (For example, refer to Patent Document 2).

特開平８−３２７９５９号（第１５−１６頁、図６）JP-A-8-327959 (pages 15-16, FIG. 6) 特開平８−３２７９５９号（第１０−１１頁、図１）JP-A-8-327959 (page 10-11, FIG. 1)

特許文献１によれば、被処理物と接地電極は非接触であるため、その間の空気層によってインピーダンスが大きくなり、放電させるための電力エネルギーが増大し、放電の不安定や処理レートの低下が発生する。
また、特許文献２によれば、接地電極は搬送テーブルから装置筐体を介して高周波電源のアースに接続されているため、インピーダンスの増大及び変動が発生し、放電が不安定になる。 According to Patent Document 1, since the object to be processed and the ground electrode are not in contact with each other, the impedance increases due to the air layer between them, the power energy for discharging increases, the discharge becomes unstable and the processing rate decreases. Occur.
According to Patent Document 2, since the ground electrode is connected from the transfer table to the ground of the high-frequency power source through the apparatus housing, the impedance increases and fluctuates, and the discharge becomes unstable.

また、特許文献１のように、被処理物の処理開始時において、被処理物がない状態で放電を開始すると、被処理物が電極間に差し掛かったときの放電が不安定になり、処理が不均一となる。一方、被処理物上部で高周波印可電極の放電を開始すると、放電が不安定となり、部分的に処理均一性の悪化や被処理物へのダメージが発生する。   In addition, as in Patent Document 1, when discharge is started in a state where there is no object to be processed at the start of processing of the object to be processed, the discharge when the object to be processed reaches between the electrodes becomes unstable, and the processing is performed. It becomes non-uniform. On the other hand, when the discharge of the high frequency applied electrode is started at the upper part of the object to be processed, the discharge becomes unstable, and the processing uniformity is partially deteriorated and the object to be processed is damaged.

そこで特許文献２のように、予め、被処理物のない放電開始領域で放電を開始し、放電が安定した時点で被処理物を走査させ、被処理物への放電を行っていた。しかしながら、電極間ギャップを被処理物上部での安定放電可能な距離に合わせなければならず、放電開始領域では被処理物の厚み分だけ距離が長くなってしまう。電極間ギャップが長くなると放電が不安定になり、放電自体が持続できない場合もある。また、放電開始ができたとしても、被処理物上部にきたとき、電極間ギャップが急激に変化するため放電が不安定となり、安定な処理を期待することができなかった。   Therefore, as in Patent Document 2, discharge is started in advance in a discharge start region where there is no object to be processed, and when the discharge is stabilized, the object to be processed is scanned to discharge the object to be processed. However, the gap between the electrodes must be matched to the distance at which stable discharge is possible at the top of the object to be processed, and the distance becomes longer by the thickness of the object to be processed in the discharge start region. When the gap between the electrodes becomes longer, the discharge becomes unstable and the discharge itself may not be sustained. Even if the discharge can be started, when the electrode reaches the upper part of the workpiece, the gap between the electrodes changes abruptly, so that the discharge becomes unstable and stable treatment cannot be expected.

本発明は上記のような課題を解決するためになされたもので、大気圧またはその近傍でのプラズマ放電を用いて行う被処理物の表面処理を、安定的かつ連続的に行うことができる表面処理装置及び表面処理方法を提供することを目的とする。   The present invention has been made in order to solve the above-described problems, and can stably and continuously perform a surface treatment of an object to be processed using a plasma discharge at or near atmospheric pressure. It aims at providing a processing apparatus and a surface treatment method.

本発明に係る表面処理装置は、大気圧近傍下で印可電極による放電によりプラズマを発生させ、被処理物を載置した搬送部を前記放電部を通過させて前記被処理物の表面処理を行う表面処理装置において、前記被処理物の周辺を該被処理物と同じ厚みの高さ調整部で囲むようにしたものである。これにより、放電開始領域と被処理物との間で電極間ギャップがなくなり、放電が安定し、処理の均一性が向上する。   The surface treatment apparatus according to the present invention generates plasma by discharge with an applied electrode near atmospheric pressure, and passes the discharge unit through a transport unit on which the workpiece is placed to perform surface treatment of the workpiece. In the surface treatment apparatus, the periphery of the object to be processed is surrounded by a height adjusting unit having the same thickness as the object to be processed. Thereby, there is no gap between the electrodes between the discharge start region and the object to be processed, the discharge is stabilized, and the processing uniformity is improved.

本発明に係る表面処理装置は、被処理物を搬送する搬送部を、導電性材料よりなる搬送基部と、該搬送基部の上に取り付けた高さ調整部によって構成したものである。これにより、放電開始領域と被処理物との間で電極間ギャップ差がなくなり、放電が安定化し、処理の均一性が向上する。   In the surface treatment apparatus according to the present invention, a conveyance unit that conveys an object to be processed is configured by a conveyance base made of a conductive material and a height adjustment unit attached on the conveyance base. Thereby, there is no gap difference between the electrodes between the discharge start region and the object to be processed, the discharge is stabilized, and the processing uniformity is improved.

本発明に係る表面処理装置は、搬送基部に対して高さ調整部を取り外し自在に取り付けたものである。これにより、被処理物の形状や厚みの変化に対応して高さ調整部の形状や厚みを変えることができるので、被処理物に対応した最適の高さ調整部を取り付けることができ、その際の対応も容易かつ簡単である。   In the surface treatment apparatus according to the present invention, the height adjustment unit is detachably attached to the conveyance base. As a result, the shape and thickness of the height adjustment unit can be changed in response to changes in the shape and thickness of the object to be processed, so that an optimum height adjustment unit corresponding to the object to be processed can be attached. The response is easy and simple.

本発明に係る表面処理装置は、高さ調整部を被処理物と同じ材質の部材によって構成したものである。これにより、安定で均一な被処理物の処理が可能となる。   In the surface treatment apparatus according to the present invention, the height adjusting unit is configured by a member made of the same material as the object to be processed. Thereby, the processing of the stable and uniform to-be-processed object is attained.

本発明に係る表面処理装置は、高さ調整部を被処理物と誘電率が同じか若しくは近い部材によって構成したものである。これにより、安定で均一な被処理物の処理が可能となる。   In the surface treatment apparatus according to the present invention, the height adjusting unit is configured by a member having the same or close dielectric constant as that of the object to be processed. Thereby, the processing of the stable and uniform to-be-processed object is attained.

本発明に係る表面処理装置は、搬送部の放電開始時において、印可電極の電極端と被処理物との平面距離が１０ｍｍ以上となるようにしたものである。これにより、放電開始時に被処理物が印可電極による放電影響を受けず、安定で均一な被処理物の処理が可能となる。   The surface treatment apparatus according to the present invention is such that the planar distance between the electrode end of the applied electrode and the object to be treated is 10 mm or more at the start of discharge of the transport unit. As a result, the object to be processed is not affected by the discharge due to the applied electrode at the start of discharge, and a stable and uniform object can be processed.

本発明に係る表面処理装置は、高さ調整部の搬送方向における放電開始領域の幅を、印可電極幅と、被処理物が印加電極による放電影響を受けない距離との和以上としたものである。これにより、安定で均一な被処理物の処理が可能となる。   In the surface treatment apparatus according to the present invention, the width of the discharge start region in the conveying direction of the height adjusting unit is set to be equal to or greater than the sum of the applied electrode width and the distance at which the workpiece is not affected by the discharge due to the applied electrode. is there. Thereby, the processing of the stable and uniform to-be-processed object is attained.

本発明に係る表面処理装置は、被処理物と高さ調整部との平面方向の隙間を１ｍｍ以下としたものである。これにより、被処理物を走査して隙間部分が放電部を通過する際に放電状態が変動することなく、安定で均一な被処理物の処理が可能となる。   In the surface treatment apparatus according to the present invention, the gap in the plane direction between the workpiece and the height adjusting unit is 1 mm or less. Thereby, when the object to be processed is scanned and the gap portion passes through the discharge part, the discharge state does not fluctuate, and the object can be processed stably and uniformly.

本発明に係る表面処理装置は、搬送部が接地電極を兼ね、高周波電源のアース部に直接に接続するようにしたものである。これにより、アース経路を直接接続するのでエネルギーロスが減り、投入エネルギーを削減することができる。   In the surface treatment apparatus according to the present invention, the transport section also serves as a ground electrode and is directly connected to the ground section of the high-frequency power source. As a result, since the ground path is directly connected, energy loss is reduced and input energy can be reduced.

本発明に係る表面処理装置は、アース経路をフレキシブルに変形可能としたものである。これにより、搬送系の自由度を増すことができる。   In the surface treatment apparatus according to the present invention, the ground path can be flexibly deformed. Thereby, the freedom degree of a conveyance system can be increased.

本発明に係る表面処理装置は、搬送部の搬送をコンベアまたはエア浮上によって行うようにしたものである。これにより、搬送系の自由度を増すことができる。   The surface treatment apparatus according to the present invention is such that the conveyance of the conveyance unit is performed by a conveyor or air levitation. Thereby, the freedom degree of a conveyance system can be increased.

本発明に係る表面処理方法は、上記のいずれかに記載の表面処理装置により被処理物の表面処理を行うようにしたものである。これにより、放電開始領域と被処理物との間で電極間のギャップ差がなくなり、安定した放電が可能となり、処理の均一性が向上する。   The surface treatment method according to the present invention is to perform a surface treatment of an object to be processed by any of the surface treatment apparatuses described above. Thereby, there is no gap difference between the electrodes between the discharge start region and the object to be processed, stable discharge is possible, and processing uniformity is improved.

［実施の形態］
図１は本発明の実施の形態の側面図、図２は図１の平面図である。図において、被処理物１はガラス基板やシリコンウェハー等からなり、搬送部を構成する搬送テーブル２上に載置されている。搬送テーブル２に対向して、その上部には、搬送テーブル２より一定の距離を隔てて高周波印可電極３が配設され、ここより搬送テーブル２側にガスが吹き出して、搬送テーブル２との間の放電によってプラズマを発生するようにしてある。搬送テーブル２と高周波印可電極３とは、マッチング回路４を介して高周波電源５に接続されており、搬送テーブル２は接地電極を兼ねている。こうして、搬送テーブル２は、コンベア９によって前方イ方向に移動するようになっている。 [Embodiment]
FIG. 1 is a side view of an embodiment of the present invention, and FIG. 2 is a plan view of FIG. In the figure, an object to be processed 1 is made of a glass substrate, a silicon wafer or the like, and is placed on a transfer table 2 constituting a transfer unit. A high-frequency applying electrode 3 is disposed on the upper side of the transfer table 2 at a certain distance from the transfer table 2, and gas is blown out from the transfer table 2 to the transfer table 2. Plasma is generated by this discharge. The conveyance table 2 and the high frequency applied electrode 3 are connected to a high frequency power source 5 through a matching circuit 4, and the conveyance table 2 also serves as a ground electrode. Thus, the transfer table 2 is moved in the forward direction B by the conveyor 9.

次に、それぞれの構成を詳細に説明する。搬送テーブル２は、板状のほぼ直方体形状をなし、導電性材料（アルミ、銅、銀、ステンレス、真鍮などの金属）よりなる板状の搬送基部２ａの上に、誘電率が被処理物１と同じか若しくは近い誘電体を用い、被処理物１の厚みに対応しかつ被処理物１の形状に対応した形状の貫通穴を有するほぼロ形状の高さ調整部２ｂが積層して取り付けられている。高さ調整部２ｂに形成された貫通穴は、その深さが被処理物１の厚みと一致しており、これらの搬送基部２ａと高さ調整部２ｂが積層した状態で被処理物１の載置凹部２ｃを形成し、被処理物１が載置凹部２ｃに挿入載置された状態で、被処理物１の上面と搬送テーブル２の高さ調整部２ｂの上面が同一平面をなすようにしてある。このように構成したことにより、高さ調整部２ｂの搬送側に位置する放電開始領域２ｄと被処理部１との間で電極間ギャップ差をなくすことができる。なお、高さ調整部２ｂは、被処理物１と誘電率が同じか若しくは近い誘電体によって構成してあるが、被処理物１と同じ材質によって構成するようにしてもよい。   Next, each configuration will be described in detail. The transfer table 2 has a plate-like substantially rectangular parallelepiped shape, and has a dielectric constant of 1 to be processed on a plate-like transfer base 2a made of a conductive material (a metal such as aluminum, copper, silver, stainless steel, or brass). And a substantially height-adjusting portion 2b having a through-hole having a shape corresponding to the thickness of the object to be processed 1 and corresponding to the shape of the object to be processed 1 is stacked and attached. ing. The depth of the through-hole formed in the height adjusting portion 2b is the same as the thickness of the object 1 to be processed, and the transport base 2a and the height adjusting portion 2b are stacked to form the object 1 to be processed. In the state where the mounting recess 2c is formed and the workpiece 1 is inserted and mounted in the mounting recess 2c, the upper surface of the workpiece 1 and the upper surface of the height adjusting portion 2b of the transfer table 2 are flush with each other. It is. With this configuration, it is possible to eliminate the gap difference between the electrodes between the discharge start region 2d located on the transport side of the height adjusting unit 2b and the processing target 1. The height adjusting unit 2b is made of a dielectric having the same or similar dielectric constant as that of the object to be processed 1, but may be made of the same material as that of the object 1 to be processed.

上記の高さ調整部２ｂを搬送基部２ａに対して取り外し自在に構成すると、被処理物１の厚さが変わった場合でも、高さ調整部２ｂのみを取り替えることで、被処理物１の厚さの変化に簡単に対応することができる。なお、被処理物１に対応して搬送テーブル２ごとに取り替えることもでき、こうすればより簡単に被処理物１の厚さの変化に対応することができる。   When the height adjusting unit 2b is configured to be detachable from the transport base 2a, even if the thickness of the workpiece 1 is changed, only the height adjusting unit 2b is replaced, so that the thickness of the workpiece 1 is changed. It is possible to easily cope with changes in height. In addition, it can replace | exchange for every conveyance table 2 corresponding to the to-be-processed object 1, and it can respond to the change of the thickness of the to-be-processed object 1 more easily by carrying out like this.

搬送テーブル２の高さ調整部２ｂの放電開始領域２ｄは、放電を安定させるために、進行方向の幅Ｗ1 が、少なくとも高周波印可電極３の前後方向の幅Ｗと、被処理物１が放電影響を受けない幅との和になるように構成されている。また、搬送テーブル２の高さ調整部２ｂの両側２ｅは、その進行方向と直角をなす方向の幅Ｗ3 が、被処理物１における放電を安定させるための一定の幅を取るように構成され、さらに、高さ調整部２ｂの後側２ｆは、その進行方向の幅Ｗ2 が高周波印可電極３の幅Ｗ以上になるように構成されている。 Discharge initiation region 2d of the height adjusting portion 2b of the conveying table 2, in order to stabilize the discharge, the width W 1 of the traveling direction, and the width W in the front-rear direction of the at least the high frequency applied electrode 3, the processing object 1 is discharged It is configured to be the sum of the unaffected width. Further, both sides 2e of the height adjusting portion 2b of the conveying table 2, the width W 3 that constitute a traveling direction perpendicular, it is configured to take a certain width to stabilize the discharge in the object to be processed 1 further side 2f after height adjustment unit 2b, the width W 2 of the traveling direction is configured to be equal to or greater than the width W of the high frequency applied electrode 3.

高周波印可電極３は導電性の高い金属によって構成され、その下面にはセラミック、石英などよりなる誘電体３ａが設けられ、搬送テーブル２の搬送方向とほぼ直交して搬送テーブル２を跨ぐようにして配設されており、その上部にガス導入口３ｂ、下部にガス排出口３ｃが設けられ、両者の間にガス通路３ｄが設けられている。そして、高周波印可電極３と搬送テーブル２との間には、放出したガスが放電によってプラズマ化されるプラズマ領域８が形成される。高周波印可電極３の搬送方向の前後には、被処理物１の表面処理を行ったあとの気体を排気する排気部３ｅ、３ｆが設けられている。   The high-frequency applied electrode 3 is made of a highly conductive metal, and a lower surface thereof is provided with a dielectric 3a made of ceramic, quartz, or the like so as to straddle the transport table 2 almost perpendicularly to the transport direction of the transport table 2. The gas inlet 3b is provided at the upper part, the gas outlet 3c is provided at the lower part, and the gas passage 3d is provided between them. And between the high frequency application electrode 3 and the conveyance table 2, the plasma area | region 8 where the emitted gas is plasmified by discharge is formed. Before and after the high-frequency applied electrode 3 in the transport direction, exhaust portions 3e and 3f for exhausting the gas after the surface treatment of the workpiece 1 is provided.

搬送テーブル２は、高周波印可電極３の高周波電源５のアース部６に直接電気的に接続されるアース経路７を持ち、例えば、銅板などの導電性の高い金属で直接接続され、搬送に併せてフレキシブルに変形できるようになっている。このため、搬送駆動部にアース経路を考える必要がなく、先に述べたコンベア９による搬送方法に限らず、エア浮上などの搬送方法を用いることもできる。   The transfer table 2 has a ground path 7 that is directly electrically connected to the ground portion 6 of the high-frequency power source 5 of the high-frequency applied electrode 3, and is directly connected by a highly conductive metal such as a copper plate, for example, in conjunction with the transfer. It can be deformed flexibly. For this reason, it is not necessary to consider an earth path in the transport driving unit, and not only the transport method by the conveyor 9 described above but also a transport method such as air levitation can be used.

上記のように構成した実施の形態１の作用を、図３、図４を用いて説明する。被処理物１は、処理領域の手前で、例えばコンベアによる搬送手段により搬送テーブル２に受け渡される。そして、被処理物１は、搬送テーブル２の載置凹部２ｃ内に挿入載置され、被処理物１の厚みが載置凹部２ｃの深さと一致して、被処理物１の上面と搬送テーブル２の高さ調整部２ｂの上面とが同一平面をなす。この状態で、搬送テーブル２が処理領域に移動する。そして、図３に示すように、放電開始領域２ｄで、高周波印可電極３のガス通路３ｄを通過しガス排出口３ｃから排出したガスが、高周波印可電極３によってプラズマ放電領域８でプラズマ化される。このとき、放電開始領域２ｄでは、高周波印可電極３と被処理物１間の水平方向の距離を、被処理物１が放電の影響を受けない距離としてあるので、被処理物１は放電の影響を受けることはない。   The operation of the first embodiment configured as described above will be described with reference to FIGS. The workpiece 1 is transferred to the transport table 2 by a transport means such as a conveyor, for example, before the processing area. And the to-be-processed object 1 is inserted and mounted in the mounting recessed part 2c of the conveyance table 2, the thickness of the to-be-processed object 1 corresponds with the depth of the mounting recessed part 2c, and the upper surface of the to-be-processed object 1 and a conveying table. The upper surface of the second height adjusting portion 2b is flush with the upper surface. In this state, the transfer table 2 moves to the processing area. Then, as shown in FIG. 3, the gas discharged from the gas discharge port 3 c through the gas passage 3 d of the high frequency applied electrode 3 in the discharge start region 2 d is converted into plasma in the plasma discharge region 8 by the high frequency applied electrode 3. . At this time, in the discharge start region 2d, the horizontal distance between the high frequency applied electrode 3 and the workpiece 1 is set as a distance at which the workpiece 1 is not affected by the discharge, and therefore the workpiece 1 is affected by the discharge. Not receive.

放電開始領域２ｄにおいて、放電が安定した時点で搬送テーブル２が図３に示す矢印イ方向に移動し、図４に示すように、被処理物１への処理がプラズマ領域８で開始され、親水処理、撥水処理、アッシング処理などの表面処理が行われる。   In the discharge start area 2d, when the discharge is stabilized, the transfer table 2 moves in the direction of the arrow A shown in FIG. 3, and as shown in FIG. Surface treatments such as treatment, water repellent treatment, and ashing treatment are performed.

本実施の形態によれば、被処理物１の周辺を被処理物１と同じ厚みの高さ調整部２ｂで覆うようにしたので、放電開始領域２ｄの上面と被処理物１の上面での電極間のギャップ差がなくなり、また、被処理物１の厚みを変えた場合には、その厚みにあった高さ調整部２ｂを有する搬送テーブル２に替え、もしくは高さ調整部２ｂを搬送基部２ａから取り外して、被処理物１の厚みにあった高さ調整部２ｂに取り替えることができるので、安定した放電を行うことができ、被処理物１の均一な処理を行うことが可能となり、被処理物１の形状や厚み変化に容易に対応することができる。また、アース経路７を直接接続するようにしたので、搬送系の自由度が増し、エネルギーロスが減り、投入エネルギーを削減することができる。   According to the present embodiment, since the periphery of the workpiece 1 is covered with the height adjustment unit 2b having the same thickness as the workpiece 1, the upper surface of the discharge start region 2d and the upper surface of the workpiece 1 are covered. When the gap difference between the electrodes is eliminated and the thickness of the workpiece 1 is changed, the conveyance table 2 having the height adjustment unit 2b corresponding to the thickness is replaced with the height adjustment unit 2b. Since it can be removed from 2a and replaced with the height adjustment unit 2b that matches the thickness of the object to be processed 1, stable discharge can be performed, and the object 1 can be uniformly processed. It is possible to easily cope with changes in the shape and thickness of the workpiece 1. Further, since the ground path 7 is directly connected, the degree of freedom of the transport system is increased, energy loss is reduced, and input energy can be reduced.

［実施例１］
被処理物１の表面改質として、親水処理を行った。
搬送テーブル２の高さ調整部２ｂとして被処理物１とほぼ同じ材質の誘電体を用いた。高さ調整部２ｂの放電開始領域２ｄは、放電を安定させるため、搬送方向に、高周波印可電極３の幅と、被処理物１が放電影響を受けない距離１０ｍｍと、搬送テーブル端側１０ｍｍとの合計距離を取った。搬送テーブル２の高さ調整部２ｂの処理終了側領域は、高周波印加電極３の幅以上の幅とした。搬送テーブル２の高さ調整部２ｂの両側領域は、被処理物１の放電を安定させるため、２０ｍｍ以上とした。また、高さ調整部２ｂの厚みを０．５〜２ｍｍとし、被処理物１の厚みを高さ調整部２ｂの厚みと同じ０．５〜２ｍｍとし、高周波印可電極３と被処理物１との間のギャップを０．５〜２ｍｍとした。
上記のように構成した搬送テーブル２の載置凹部２ｃに被処理物１を挿入載置した。この際の被処理物１と、搬送テーブル２の高さ調整部２ｂとの平面方向の隙間は、そのギャップが１ｍｍ以下となるようにした。放電開始時において、高周波印可電極３の電極端と被処理物１の端部との距離は、被処理物１が放電の影響を受けない１０ｍｍ以上とした。 [Example 1]
Hydrophilic treatment was performed as a surface modification of the workpiece 1.
As the height adjusting portion 2b of the transfer table 2, a dielectric material that is substantially the same material as the workpiece 1 is used. In order to stabilize the discharge, the discharge start region 2d of the height adjusting unit 2b has a width of the high frequency applied electrode 3 in the transport direction, a distance at which the workpiece 1 is not affected by the discharge, and a transport table end side of 10 mm. Took the total distance. The region on the processing end side of the height adjustment unit 2 b of the transport table 2 was set to have a width equal to or greater than the width of the high frequency application electrode 3. In order to stabilize the discharge of the workpiece 1, the both side regions of the height adjusting portion 2b of the transport table 2 are set to 20 mm or more. Further, the thickness of the height adjusting portion 2b is set to 0.5 to 2 mm, the thickness of the workpiece 1 is set to 0.5 to 2 mm which is the same as the thickness of the height adjusting portion 2b, and the high frequency applied electrode 3 and the workpiece 1 The gap between them was 0.5-2 mm.
The workpiece 1 was inserted and placed in the placement recess 2c of the transport table 2 configured as described above. The gap in the plane direction between the workpiece 1 and the height adjusting portion 2b of the transfer table 2 was set to be 1 mm or less. At the start of discharge, the distance between the electrode end of the high-frequency applied electrode 3 and the end of the workpiece 1 was set to 10 mm or more so that the workpiece 1 was not affected by the discharge.

被処理物１として、ＳｉＯ2 、ＩＴＯ等の無機物、または、アクリルなどの有機物を用いた。
搬送テーブル２に対向した位置に配設した高周波印可電極３から搬送テーブル２側にＨｅ＋Ｏ2 を１００：１の割合で混合したガスを送り、プラズマ化して、被処理物１の表面を親水処理した。被処理物１の処理速度は、１０〜４０ｍｍ／ｓｅｃであった。
親水状態の評価として接触角を用いており、処理速度が４０ｍｍ／ｓｅｃ以下であれば、ある一定の処理以上行っても接触角が飽和してくる飽和接触角を満足した。
被処理物１の周辺を被処理物１と同じ厚みの０．５〜２ｍｍの高さ調整部２ｂで覆ったので、放電開始領域２ｄと被処理物１の上部での電極間のギャップ差がなくなり、均一な処理ができる。 As the object 1 to be processed, an inorganic material such as SiO 2 or ITO, or an organic material such as acrylic was used.
A gas in which He + O 2 is mixed at a ratio of 100: 1 is sent from the high-frequency applying electrode 3 disposed at a position facing the transfer table 2 to the transfer table 2 side to form plasma, and the surface of the workpiece 1 is subjected to a hydrophilic treatment. . The processing speed of the workpiece 1 was 10 to 40 mm / sec.
When the contact angle was used as the evaluation of the hydrophilic state and the treatment speed was 40 mm / sec or less, the saturation contact angle at which the contact angle was saturated even when a certain treatment or more was performed was satisfied.
Since the periphery of the object to be processed 1 is covered with the height adjusting unit 2b having the same thickness as the object to be processed 0.5 to 2 mm, there is a gap difference between the electrodes in the discharge start region 2d and the upper part of the object 1 to be processed. Eliminates uniform processing.

［実施例２］
被処理物１の表面改質として、撥水処理を行った。
搬送テーブル２の高さ調整部２ｂとして被処理物１とほぼ同じ材質の誘電体を用いた。高さ調整部２ｂの放電開始領域２ｄは、放電を安定させるため、搬送方向に、高周波印可電極３の幅と、被処理物１が放電影響を受けない距離１０ｍｍと、搬送テーブル端側１０ｍｍとの合計距離を取った。搬送テーブル２の高さ調整部２ｂの処理終了側領域は、高周波印加電極３の幅以上の幅とした。搬送テーブル２の高さ調整部２ｂの両側領域は、被処理物１の放電を安定させるため、２０ｍｍ以上とした。高さ調整部２ｂの厚みを０．５〜２ｍｍとし、被処理物１の厚みを高さ調整部２ｂの厚みと同じ０．５〜２ｍｍとし、高周波印可電極３と被処理物１との間のギャップを０．５〜２ｍｍとした。
上記のように構成した搬送テーブルの載置凹部に被処理物を挿入載置した。この際の被処理物１と、搬送テーブル２の高さ調整部２ｂとの平面方向の隙間は、そのギャップが１ｍｍ以下となるようにした。放電開始時において、高周波印可電極３の電極端と被処理物１の端部との距離は、被処理物１が放電の影響を受けない１０ｍｍ以上とした。 [Example 2]
A water repellent treatment was performed as a surface modification of the workpiece 1.
As the height adjusting portion 2b of the transfer table 2, a dielectric material that is substantially the same material as the workpiece 1 is used. In order to stabilize the discharge, the discharge start region 2d of the height adjusting unit 2b has a width of the high frequency applied electrode 3 in the transport direction, a distance at which the workpiece 1 is not affected by the discharge, and a transport table end side of 10 mm. Took the total distance. The region on the processing end side of the height adjustment unit 2 b of the transport table 2 was set to have a width equal to or greater than the width of the high frequency application electrode 3. In order to stabilize the discharge of the workpiece 1, the both side regions of the height adjusting portion 2b of the transport table 2 are set to 20 mm or more. The thickness of the height adjusting portion 2b is 0.5 to 2 mm, the thickness of the workpiece 1 is 0.5 to 2 mm which is the same as the thickness of the height adjusting portion 2b, and the gap between the high frequency applied electrode 3 and the workpiece 1 is high. The gap was set to 0.5 to 2 mm.
The object to be processed was inserted and mounted in the mounting recess of the transport table configured as described above. The gap in the plane direction between the workpiece 1 and the height adjusting portion 2b of the transfer table 2 was set to be 1 mm or less. At the start of discharge, the distance between the electrode end of the high-frequency applied electrode 3 and the end of the workpiece 1 was set to 10 mm or more so that the workpiece 1 was not affected by the discharge.

被処理物１として、アクリル、テフロン（登録商標）などの有機物を用いた。
搬送テーブル２に対向した位置に配設された高周波印可電極３から搬送テーブル２側にＨｅ＋ＣＦ4 を１００：１の割合で混合したガスを送り、プラズマ化して、被処理物１の表面を撥水処理した。被処理物１の処理速度は、１〜４０ｍｍ／ｓｅｃであった。
被処理物１の周辺を被処理物１と同じ厚みの０．５〜２ｍｍの誘電体で覆ったので、放電開始領域２ｄと被処理物１の上部での電極間のギャップ差がなくなり、均一な処理ができる。 As the object 1 to be processed, an organic material such as acrylic or Teflon (registered trademark) was used.
A gas in which He + CF 4 is mixed at a ratio of 100: 1 is sent from the high-frequency applying electrode 3 disposed at a position facing the transfer table 2 to the transfer table 2 side to form plasma, and the surface of the workpiece 1 is water repellent. Processed. The processing speed of the workpiece 1 was 1 to 40 mm / sec.
Since the periphery of the workpiece 1 is covered with a dielectric of 0.5 to 2 mm having the same thickness as the workpiece 1, there is no gap difference between the electrodes at the discharge start region 2d and the upper portion of the workpiece 1 and uniform. Can be processed.

［実施例３］
被処理物１の表面改質として、アッシングを行った。
搬送テーブル２の高さ調整部２ｂとして被処理物１とほぼ同じ材質の誘電体を用いた。高さ調整部２ｂの放電開始領域２ｄは、放電を安定させるため、搬送方向に、高周波印可電極３の幅と、被処理物１が放電影響を受けない距離１０ｍｍと、搬送テーブル端側１０ｍｍとの合計距離を取った。搬送テーブル２の高さ調整部２ｂの処理終了側領域は、高周波印加電極３の幅以上の幅とした。搬送テーブル２の高さ調整部２ｂの両側領域は、被処理物１の放電を安定させるため、２０ｍｍ以上とした。高さ調整部２ｂの厚みを０．５〜２ｍｍとし、被処理物１の厚みを高さ調整部２ｂの厚みと同じ０．５〜２ｍｍとし、高周波印可電極３と被処理物１との間のギャップを０．５〜２ｍｍとした。
上記のように構成した搬送テーブル２の載置凹部２ｃに被処理物１を挿入載置した。この際の被処理物１と、搬送テーブル２の高さ調整部２ｂとの平面方向の隙間は、そのギャップが１ｍｍ以下となるようにした。放電開始時において、高周波印可電極３の電極端と被処理物１の端部との距離は、被処理物１が放電の影響を受けない１０ｍｍ以上とした。 [Example 3]
As surface modification of the workpiece 1, ashing was performed.
As the height adjusting portion 2b of the transfer table 2, a dielectric material that is substantially the same material as the workpiece 1 is used. In order to stabilize the discharge, the discharge start region 2d of the height adjusting unit 2b has a width of the high frequency applied electrode 3 in the transport direction, a distance at which the workpiece 1 is not affected by the discharge, and a transport table end side of 10 mm. Took the total distance. The region on the processing end side of the height adjustment unit 2 b of the transport table 2 was set to have a width equal to or greater than the width of the high frequency application electrode 3. In order to stabilize the discharge of the workpiece 1, the both side regions of the height adjusting portion 2b of the transport table 2 are set to 20 mm or more. The thickness of the height adjusting portion 2b is 0.5 to 2 mm, the thickness of the workpiece 1 is 0.5 to 2 mm which is the same as the thickness of the height adjusting portion 2b, and the gap between the high frequency applied electrode 3 and the workpiece 1 is high. The gap was set to 0.5 to 2 mm.
The workpiece 1 was inserted and placed in the placement recess 2c of the transport table 2 configured as described above. The gap in the plane direction between the workpiece 1 and the height adjusting portion 2b of the transfer table 2 was set to be 1 mm or less. At the start of discharge, the distance between the electrode end of the high-frequency applied electrode 3 and the end of the workpiece 1 was set to 10 mm or more so that the workpiece 1 was not affected by the discharge.

被処理物１として、レジスト、ポリイミドなどの有機物を用いた。
搬送テーブル２に対向した位置に配設した高周波印可電極３から搬送テーブル２側にＨｅ＋Ｏ2 を１００：１の割合で混合したガスを送り、プラズマ化して、被処理物１の表面をアッシング処理した。被処理物１の処理速度は、ポリイミドが１０００〜２０００Åの場合は、２〜５ｍｍ／ｓｅｃであった。なお、この際、被処理物１への１００〜２００℃の加熱が必要であった。
被処理物１の周辺を被処理物１と同じ厚みの０．５〜２ｍｍの誘電体で覆ったので、放電開始領域２ｄと被処理物１の上部での電極間のギャップ差がなくなり、均一な処理ができる。 As the object 1 to be processed, an organic material such as a resist or polyimide was used.
A gas in which He + O 2 is mixed at a ratio of 100: 1 is sent from the high-frequency applying electrode 3 disposed at a position facing the transfer table 2 to the transfer table 2 side, and is converted into plasma, thereby ashing the surface of the workpiece 1. . The processing speed of the workpiece 1 was 2 to 5 mm / sec when the polyimide was 1000 to 2000 mm. At this time, it was necessary to heat the workpiece 1 at 100 to 200 ° C.
Since the periphery of the workpiece 1 is covered with a dielectric of 0.5 to 2 mm having the same thickness as the workpiece 1, there is no gap difference between the electrodes at the discharge start region 2d and the upper portion of the workpiece 1 and uniform. Can be processed.

本発明の一実施の形態に係る表面処理装置の側面図。The side view of the surface treatment apparatus concerning one embodiment of the present invention. 図１の平面図。The top view of FIG. 本発明の実施の形態の作用説明図。Action explanatory drawing of embodiment of this invention. 本発明の実施の形態の作用説明図。Action explanatory drawing of embodiment of this invention.

符号の説明Explanation of symbols

１ 被処理物、２ 搬送テーブル、２ａ 搬送基部、２ｂ 高さ調整部、２ｃ 載置凹部、２ｄ 放電開始領域、３ 高周波印可電極、５ 高周波電源、６ アース部、７ アース経路、８ プラズマ領域、９ コンベア。
DESCRIPTION OF SYMBOLS 1 To-be-processed object, 2 Conveyance table, 2a Conveyance base part, 2b Height adjustment part, 2c Mounting recessed part, 2d Discharge start area | region, 3 High frequency applied electrode, 5 High frequency power supply, 6 Ground part, 7 Ground path, 8 Plasma area | region, 9 Conveyor.

Claims (12)

大気圧近傍下で印可電極による放電によりプラズマを発生させ、被処理物を載置した搬送部を前記放電部を通過させて前記被処理物の表面処理を行う表面処理装置において、前記被処理物の周辺を該被処理物と同じ厚みの高さ調整部で囲むようにしたことを特徴とする表面処理装置。   In the surface treatment apparatus for generating a plasma by discharge by an applied electrode near atmospheric pressure and passing the discharge unit through the discharge unit on which the object to be processed is subjected to surface treatment of the object to be processed. A surface treatment apparatus characterized in that the periphery of the substrate is surrounded by a height adjustment unit having the same thickness as the object to be treated. 被処理物を搬送する搬送部を、導電性材料よりなる搬送基部と、該搬送基部の上に取り付た高さ調整部によって構成したことを特徴とする請求項１記載の表面処理装置。   The surface treatment apparatus according to claim 1, wherein the conveyance unit that conveys the workpiece is configured by a conveyance base made of a conductive material and a height adjustment unit that is mounted on the conveyance base. 搬送基部に対して高さ調整部を取り外し自在に取り付けたことを特徴とする請求項２記載の表面処理装置。   The surface treatment apparatus according to claim 2, wherein the height adjustment unit is detachably attached to the conveyance base. 高さ調整部を被処理物と同じ材質の部材によって構成したことを特徴とする請求項１〜３のいずれかに記載の表面処理装置。   The surface treatment apparatus according to any one of claims 1 to 3, wherein the height adjustment portion is made of a member made of the same material as the object to be treated. 高さ調整部を被処理物と誘電率が同じか若しくは近い部材によって構成したことを特徴とする請求項１〜３に記載の表面処理装置。   The surface treatment apparatus according to claim 1, wherein the height adjustment unit is configured by a member having a dielectric constant equal to or close to that of the workpiece. 搬送部の放電開始時において、印可電極の電極端と被処理物との平面距離が１０ｍｍ以上となるようにしたことを特徴とする請求項１〜５のいずれかに記載の表面処理装置。   6. The surface treatment apparatus according to claim 1, wherein a planar distance between the electrode end of the applied electrode and the object to be processed is 10 mm or more at the start of discharge of the transport unit. 高さ調整部の搬送方向における放電開始領域の幅を、印可電極幅と、被処理物が前記印加電極による放電影響を受けない距離との和以上としたことを特徴とする請求項１〜６のいずれかに記載の表面処理装置。   The width of the discharge start region in the conveying direction of the height adjusting unit is set to be equal to or greater than the sum of the applied electrode width and the distance at which the workpiece is not affected by the discharge by the application electrode. The surface treatment apparatus in any one of. 被処理物と高さ調整部との平面方向の隙間を１ｍｍ以下としたことを特徴とする請求項１〜７のいずれかに記載の表面処理装置。   The surface treatment apparatus according to any one of claims 1 to 7, wherein a gap in a plane direction between the object to be processed and the height adjusting unit is 1 mm or less. 搬送部が接地電極を兼ね、高周波電源のアース部に直接接続するようにしたことを特徴とする請求項１〜８のいずれかに記載の表面処理装置。   The surface treatment apparatus according to any one of claims 1 to 8, wherein the transport unit also serves as a ground electrode and is directly connected to a ground unit of a high-frequency power source. アース経路をフレキシブルに変形可能としたことを特徴とする請求項９に記載の表面処理装置。   The surface treatment apparatus according to claim 9, wherein the ground path can be flexibly deformed. 搬送部の搬送をコンベアまたはエア浮上によって行うようにしたことを特徴とする請求項１〜１０のいずれかに記載の表面処理装置。   The surface treatment apparatus according to claim 1, wherein conveyance of the conveyance unit is performed by a conveyor or air levitation. 請求項１〜１１のいずれかに記載の表面処理装置により被処理物の表面処理を行うことを特徴とする表面処理方法。
A surface treatment method for performing a surface treatment of an object to be treated by the surface treatment apparatus according to claim 1.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234274A (en) * 2006-02-28 2007-09-13 Noritsu Koki Co Ltd Workpiece processing device and plasma generating device
JP2007233126A (en) * 2006-03-02 2007-09-13 Dainippon Printing Co Ltd Plasma processing method
WO2014148490A1 (en) * 2013-03-22 2014-09-25 株式会社日立国際電気 Substrate processing apparatus, and method for manufacturing semiconductor device
WO2014148551A1 (en) * 2013-03-22 2014-09-25 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing device and recording medium
CN111036618A (en) * 2019-12-12 2020-04-21 安徽省春谷3D打印智能装备产业技术研究院有限公司 Laser cleaning machine with laser head height adjustment structure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234274A (en) * 2006-02-28 2007-09-13 Noritsu Koki Co Ltd Workpiece processing device and plasma generating device
JP4680095B2 (en) * 2006-02-28 2011-05-11 株式会社サイアン Work processing apparatus and plasma generating apparatus
JP2007233126A (en) * 2006-03-02 2007-09-13 Dainippon Printing Co Ltd Plasma processing method
WO2014148490A1 (en) * 2013-03-22 2014-09-25 株式会社日立国際電気 Substrate processing apparatus, and method for manufacturing semiconductor device
WO2014148551A1 (en) * 2013-03-22 2014-09-25 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing device and recording medium
US9786493B2 (en) 2013-03-22 2017-10-10 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
CN111036618A (en) * 2019-12-12 2020-04-21 安徽省春谷3D打印智能装备产业技术研究院有限公司 Laser cleaning machine with laser head height adjustment structure

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