JP2005210102A5 - - Google Patents
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- Publication number
- JP2005210102A5 JP2005210102A5 JP2004372794A JP2004372794A JP2005210102A5 JP 2005210102 A5 JP2005210102 A5 JP 2005210102A5 JP 2004372794 A JP2004372794 A JP 2004372794A JP 2004372794 A JP2004372794 A JP 2004372794A JP 2005210102 A5 JP2005210102 A5 JP 2005210102A5
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- glass substrate
- pulse width
- calculated
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004372794A JP4831961B2 (ja) | 2003-12-26 | 2004-12-24 | 半導体装置の作製方法、選択方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003432504 | 2003-12-26 | ||
JP2003432504 | 2003-12-26 | ||
JP2004372794A JP4831961B2 (ja) | 2003-12-26 | 2004-12-24 | 半導体装置の作製方法、選択方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005210102A JP2005210102A (ja) | 2005-08-04 |
JP2005210102A5 true JP2005210102A5 (de) | 2007-12-20 |
JP4831961B2 JP4831961B2 (ja) | 2011-12-07 |
Family
ID=34914233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004372794A Expired - Fee Related JP4831961B2 (ja) | 2003-12-26 | 2004-12-24 | 半導体装置の作製方法、選択方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4831961B2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8034724B2 (en) | 2006-07-21 | 2011-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5255793B2 (ja) * | 2006-07-21 | 2013-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5007192B2 (ja) * | 2006-10-06 | 2012-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5252877B2 (ja) * | 2006-11-07 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2009280909A (ja) * | 2008-04-25 | 2009-12-03 | Semiconductor Energy Lab Co Ltd | 成膜方法および発光装置の作製方法 |
US9250178B2 (en) * | 2011-10-07 | 2016-02-02 | Kla-Tencor Corporation | Passivation of nonlinear optical crystals |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04296015A (ja) * | 1991-03-25 | 1992-10-20 | G T C:Kk | 半導体装置の製造方法 |
JP3108375B2 (ja) * | 1997-01-30 | 2000-11-13 | 株式会社自由電子レーザ研究所 | 半導体薄膜及びその製膜方法 |
US6734387B2 (en) * | 1999-05-27 | 2004-05-11 | Spectra Physics Lasers, Inc. | Method and apparatus for micro-machining of articles that include polymeric materials |
JP2001077450A (ja) * | 1999-09-07 | 2001-03-23 | Japan Science & Technology Corp | 固体レーザー装置 |
JP2001184544A (ja) * | 1999-12-24 | 2001-07-06 | Victor Co Of Japan Ltd | 商品管理方法 |
JP3754857B2 (ja) * | 2000-02-03 | 2006-03-15 | キヤノン株式会社 | レーザ加工方法 |
JP2001338894A (ja) * | 2000-05-26 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 固体試料のアニール方法および半導体不純物ドーピング層形成方法 |
JP2002141301A (ja) * | 2000-11-02 | 2002-05-17 | Mitsubishi Electric Corp | レーザアニーリング用光学系とこれを用いたレーザアニーリング装置 |
JP4137473B2 (ja) * | 2002-03-11 | 2008-08-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2004
- 2004-12-24 JP JP2004372794A patent/JP4831961B2/ja not_active Expired - Fee Related
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