JP5252877B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5252877B2 JP5252877B2 JP2007276482A JP2007276482A JP5252877B2 JP 5252877 B2 JP5252877 B2 JP 5252877B2 JP 2007276482 A JP2007276482 A JP 2007276482A JP 2007276482 A JP2007276482 A JP 2007276482A JP 5252877 B2 JP5252877 B2 JP 5252877B2
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- film
- laser beam
- glass substrate
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- semiconductor film
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Description
図1(A)に示すように、絶縁表面を有するガラス基板100の片面に、下地保護膜として機能する絶縁膜101、102を形成し、絶縁膜102上に非晶質半導体膜103を形成する。次に、非晶質半導体膜の水素を除去するため、非晶質半導体膜を加熱する。このとき、ガラス基板及び下地保護膜として機能する絶縁膜も加熱される。当該加熱後の下地保護膜として機能する絶縁膜101、102及び非晶質半導体膜103が加熱された後の全応力が、−500N/m以上+50N/m以下、好ましくは−150N/m以上0N/m以下となるように、絶縁膜101、102、及び非晶質半導体膜103を形成する。
本実施の形態では、半導体装置の一例である液晶表示装置について図4、及び図5を用いて説明する。
本実施の形態では、半導体装置の一例である発光素子を有する発光装置の作製工程について説明する。
本実施の形態では、非接触でデータの伝送が可能な半導体装置の作製工程を図9〜12を用いて説明する。また半導体装置の構成について図13を用いて説明する。また、本実施の形態で示す半導体装置の用途を図14を用いて説明する。
上記実施の形態に示される半導体装置を有する電子機器として、テレビジョン装置(単にテレビ、又はテレビジョン受信機ともよぶ)、デジタルカメラ、デジタルビデオカメラ等のカメラ、携帯電話装置(単に携帯電話機、携帯電話ともよぶ)、PDA等の携帯情報端末、携帯型ゲーム機、コンピュータ用のモニター、コンピュータ、カーオーディオ等の音響再生装置、家庭用ゲーム機等の記録媒体を備えた画像再生装置等が挙げられる。その具体例について、図15を参照して説明する。
Claims (2)
- 熱膨張率6×10−7/℃より大きく38×10−7/℃以下のガラス基板上に、珪素膜を含む層を形成し、
前記珪素膜を含む層を加熱して前記珪素膜を含む層の全応力を−500N/m以上+50N/m以下とした後、
前記珪素膜を含む層に紫外光であり、幅が100μm以下であり、前記幅に対する長さの比が1対500以上であるパルス発振のレーザビームを照射して前記珪素膜を完全溶融させながら基板の水平方向に結晶を成長させることを特徴とする半導体装置の作製方法。 - 熱膨張率が6×10−7/℃より大きく38×10−7/℃以下で厚さが0.5mm以上1.2mm以下のガラス基板に、厚さ40nm以上60nm以下の窒化酸化珪素膜、厚さ80nm以上120nm以下の酸化窒化珪素膜、及び厚さ50nm以上80nm以下の非晶質珪素膜を順にプラズマCVD法で成膜し、
500℃以上650℃以下で加熱し、前記窒化酸化珪素膜、前記酸化窒化珪素膜、及び前記非晶質珪素膜の全応力を−500N/m以上+50N/m以下とした後、
前記非晶質珪素膜に紫外光であり、幅が100μm以下であり、前記幅に対する長さの比が1対500以上であるパルス発振のレーザビームを照射し、前記非晶質珪素膜を完全溶融させながら前記ガラス基板の水平方向に結晶を成長させることを特徴とする半導体装置の作製方法。
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JP2008141179A5 JP2008141179A5 (ja) | 2010-11-18 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US10424672B2 (en) | 2016-02-19 | 2019-09-24 | Silicon Display Technology | Oxide semiconductor transistor |
KR20170116865A (ko) * | 2016-04-12 | 2017-10-20 | 충북대학교 산학협력단 | 산화물 반도체 기반의 트랜지스터 및 그 제조 방법 |
KR101872421B1 (ko) * | 2016-04-12 | 2018-06-28 | 충북대학교 산학협력단 | 산화물 반도체 기반의 트랜지스터 및 그 제조 방법 |
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CN101179012B (zh) | 2011-10-05 |
US8017508B2 (en) | 2011-09-13 |
US20110312165A1 (en) | 2011-12-22 |
EP1921667A2 (en) | 2008-05-14 |
JP2008141179A (ja) | 2008-06-19 |
KR101380136B1 (ko) | 2014-04-01 |
US20080108206A1 (en) | 2008-05-08 |
US8242002B2 (en) | 2012-08-14 |
US7811911B2 (en) | 2010-10-12 |
KR20080041596A (ko) | 2008-05-13 |
EP1921667B1 (en) | 2017-05-03 |
CN101179012A (zh) | 2008-05-14 |
US20110014780A1 (en) | 2011-01-20 |
EP1921667A3 (en) | 2011-05-04 |
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