JP2004233994A - 光干渉型表示パネル及びその製造方法 - Google Patents
光干渉型表示パネル及びその製造方法 Download PDFInfo
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- G02B5/285—Interference filters comprising deposited thin solid films
- G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
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- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
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Abstract
【解決手段】本発明の光干渉型表示パネルの製造方法は、基板10を有し、該基板10の表面に順次に支持層11、光学層12、犠牲層13及び導体層14が形成され、その後、犠牲層13が除去されることを特徴とするもので、基板10上に支持層11を形成する工程と、基板10上に光学層12を形成する工程と、基板10上に、犠牲層13を構成すべき素材を積層し、平坦化して犠牲層13を形成する工程と、前記支持層11同士の間に形成される犠牲層13上に導体層14を形成する工程と、前記導体層14の下方における犠牲層13を除去して、該導体層14を支持層11により支持させる工程とからなる。
【選択図】 図1
Description
しかし、各メーカーでは引き続き異なるタイプの平面型表示装置の研究開発が続けられているが、その反面では、携帯型電子製品(例えば、携帯電話、PDA、電子ペーパーなど)に液晶表示装置を組込んだ際に使用電力の負荷が増加するという問題がある。故に、現在では如何にして表示装置の消費電力を抑えるかが最大の課題である。
図4A,Bに示すように、碁板70上に周知の技術である薄膜形成、フォトリソグラフィー或いはエッチングなどにより光学層71及び犠牲層701を形成し、それら光学層71及び犠牲層701の表面にネガ型レジストを塗布すると共に、背面露光、現像などの工程によりパターン化を行なう。
その後、図4Cに示すように、ネガ型レジストを除去して支持層72を設け、続いて、図4Dに示すように、犠牲層701上に導体層73を二つの支持層72上を跨ぐように形成し、最後に図4Eに示すように、導体層73の下方の犠牲層701を除去し、導体層73を支持層72により支持する。
本発明の光干渉型表示パネルの製造方法は、以下の工程による。即ち、図1のAに示すように、ガラス或いは高分子材料により成る基板10上に支持層11を形成する工程と、図1のBに示すように、前記基板10上に光学層12を形成する工程と、図1のCに示すように、前記基板10の表面に、犠牲層13を構成すべき素材を積層し、平坦化して犠牲層13を形成する工程と、図1のDに示すように、前記支持層11同士の間に形成される犠牲層13上に少なくとも反射層を含む導体層14を形成する工程と、前記導体層14の下方における犠牲層13を除去して、該導体層14を支持層11により支持させる工程と、からなる。
前記製造過程においては、支持層11は精密な背面露光技術を用いなくても、一般に採用されている露光現像技術により完成させることができる。
11 支持層
12 光学層
121 透明電極
122 吸収層
123 誘電層
124 誘電層
13 犠牲層
14 導体層
70 基板
701 犠牲層
71 光学層
72 支持層
73 導体層
Claims (11)
- 基板10を有し、該基板10の表面に順次に支持層11、光学層12、犠牲層13及び導体層14が形成され、その後、犠牲層13が除去されることを特徴とする光干渉型表示パネルの製造方法。
- 基板10上に支持層11を形成する工程と、
基板10上に光学層12を形成する工程と、
基板10上に、犠牲層13を構成すべき素材を積層し、平坦化して犠牲層13を形成する工程と、
前記支持層11同士の間に形成される犠牲層13上に導体層14を形成する工程と、
前記導体層14の下方における犠牲層13を除去して、該導体層14を支持層11により支持させる工程と、
を有することを特徴とする請求項1に記載の光干渉型表示パネルの製造方法。 - 前記光学層12はその一部が支持層11に重なり、その光学層12における、支持層11に重なる部分の上面に導体層14が架設されることを特徴とする請求項1又は2に記載の光干渉型表示パネルの製造方法。
- 前記基板10はガラス又は高分子材料から成ることを特微とする請求項1又は2に記載の光干渉型表示パネルの製造方法。
- 前記光学層12は少なくとも透明電極121、吸収層122及び誘電層124から成り、該誘電層124は単層又は複数層であることを特徴とする請求項3に記載の光干渉型表示パネルの製造方法。
- 前記導体層14は少なくとも反射層を含むことを特徴とする請求項3に記載の光干渉型表示パネルの製造方法。
- 基板10と、
基板10の表面に位置する支持層11と、
前記基板10の表面に、その一部が支持層11上に重なるように形成される光学層12と、
前記光学層12における、支持層11に重なる部分の上面に架設される導体層14と、
を含むことを特徴とする光干渉型表示パネル。 - 前記導体層14、光学層12及び支持層11は基板10の同一側に形成されることを特徴とする請求項7に記載の光干渉型表示パネル。
- 前記基板10はガラス又は高分子材料から成ることを特徴とする請求項7に記載の光干渉型表示パネル。
- 前記光学層12は少なくとも透明電極121、吸収層122及び誘電層124から成り、該誘電層124は単層又は複数層であることを特徴とする請求項7に記載の光干渉型表示パネル。
- 前記導体層14は少なくとも反射層を含むことを特徴とする謂求項7に記載の光干渉型表示パネル。
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TW092101977A TW557395B (en) | 2003-01-29 | 2003-01-29 | Optical interference type reflection panel and the manufacturing method thereof |
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JP (1) | JP3853320B2 (ja) |
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KR20040070012A (ko) | 2004-08-06 |
KR100635446B1 (ko) | 2006-10-17 |
US6999236B2 (en) | 2006-02-14 |
US20040145811A1 (en) | 2004-07-29 |
TW557395B (en) | 2003-10-11 |
JP3853320B2 (ja) | 2006-12-06 |
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