JP2004165490A5 - - Google Patents
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- JP2004165490A5 JP2004165490A5 JP2002330922A JP2002330922A JP2004165490A5 JP 2004165490 A5 JP2004165490 A5 JP 2004165490A5 JP 2002330922 A JP2002330922 A JP 2002330922A JP 2002330922 A JP2002330922 A JP 2002330922A JP 2004165490 A5 JP2004165490 A5 JP 2004165490A5
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002330922A JP4632625B2 (ja) | 2002-11-14 | 2002-11-14 | 薄膜磁性体記憶装置 |
US10/441,088 US6868005B2 (en) | 2002-11-14 | 2003-05-20 | Thin film magnetic memory device provided with magnetic tunnel junctions |
CNB031331300A CN100361229C (zh) | 2002-11-14 | 2003-07-21 | 有磁隧道结的薄膜磁性体存储装置 |
US11/060,305 US6996002B2 (en) | 2002-11-14 | 2005-02-18 | Thin film magnetic memory device provided with magnetic tunnel junctions |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002330922A JP4632625B2 (ja) | 2002-11-14 | 2002-11-14 | 薄膜磁性体記憶装置 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009247676A Division JP5106513B2 (ja) | 2009-10-28 | 2009-10-28 | 薄膜磁性体記憶装置 |
JP2009247675A Division JP2010028134A (ja) | 2009-10-28 | 2009-10-28 | 薄膜磁性体記憶装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004165490A JP2004165490A (ja) | 2004-06-10 |
JP2004165490A5 true JP2004165490A5 (ja) | 2005-12-02 |
JP4632625B2 JP4632625B2 (ja) | 2011-02-16 |
Family
ID=32290111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002330922A Expired - Fee Related JP4632625B2 (ja) | 2002-11-14 | 2002-11-14 | 薄膜磁性体記憶装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US6868005B2 (ja) |
JP (1) | JP4632625B2 (ja) |
CN (1) | CN100361229C (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7221582B2 (en) * | 2003-08-27 | 2007-05-22 | Hewlett-Packard Development Company, L.P. | Method and system for controlling write current in magnetic memory |
KR100975803B1 (ko) * | 2004-07-16 | 2010-08-16 | 헤드웨이 테크놀로지스 인코포레이티드 | Mtj mram 셀, mtj mram 셀들의 어레이, 및 mtj mram 셀을 형성하는 방법 |
US7067330B2 (en) * | 2004-07-16 | 2006-06-27 | Headway Technologies, Inc. | Magnetic random access memory array with thin conduction electrical read and write lines |
JP4498088B2 (ja) | 2004-10-07 | 2010-07-07 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
JP2007080344A (ja) * | 2005-09-13 | 2007-03-29 | Toshiba Corp | 半導体記憶装置 |
JP2007129018A (ja) | 2005-11-02 | 2007-05-24 | Nec Electronics Corp | 半導体装置 |
JP4364226B2 (ja) * | 2006-09-21 | 2009-11-11 | 株式会社東芝 | 半導体集積回路 |
US20080123448A1 (en) * | 2006-11-07 | 2008-05-29 | Marco Goetz | Memory device architecture and method for high-speed bitline pre-charging |
KR101334174B1 (ko) * | 2007-01-12 | 2013-11-28 | 삼성전자주식회사 | 배선 구조체 및 상기 배선 구조체를 포함한 반도체 소자 |
JP2009134794A (ja) * | 2007-11-29 | 2009-06-18 | Renesas Technology Corp | 半導体装置 |
US8130534B2 (en) * | 2009-01-08 | 2012-03-06 | Qualcomm Incorporated | System and method to read and write data a magnetic tunnel junction element |
CN110706727B (zh) * | 2019-09-30 | 2021-09-10 | 湖南大学 | 磁性随机存取存储器及基于stt marm的可重构puf方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5572480A (en) * | 1990-02-09 | 1996-11-05 | Hitachi Ltd. | Semiconductor integrated circuit device and process for fabricating the same |
JPH03272168A (ja) * | 1990-03-22 | 1991-12-03 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
JP3936005B2 (ja) * | 1996-09-18 | 2007-06-27 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP4056107B2 (ja) * | 1997-06-20 | 2008-03-05 | エルピーダメモリ株式会社 | 半導体集積回路 |
JP2002170377A (ja) * | 2000-09-22 | 2002-06-14 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
JP4726290B2 (ja) * | 2000-10-17 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
JP4726292B2 (ja) * | 2000-11-14 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4667594B2 (ja) * | 2000-12-25 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4712204B2 (ja) * | 2001-03-05 | 2011-06-29 | ルネサスエレクトロニクス株式会社 | 記憶装置 |
US20030117838A1 (en) | 2001-12-26 | 2003-06-26 | Mitsubishi Denki Kabushiki Kaisha | Thin film magnetic memory device writing data with bidirectional data write current |
US7020008B2 (en) | 2001-12-26 | 2006-03-28 | Renesas Technology Corp. | Thin film magnetic memory device writing data with bidirectional current |
JP4084084B2 (ja) * | 2002-05-23 | 2008-04-30 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
JP2004103104A (ja) * | 2002-09-09 | 2004-04-02 | Renesas Technology Corp | 薄膜磁性体記憶装置 |
-
2002
- 2002-11-14 JP JP2002330922A patent/JP4632625B2/ja not_active Expired - Fee Related
-
2003
- 2003-05-20 US US10/441,088 patent/US6868005B2/en not_active Expired - Lifetime
- 2003-07-21 CN CNB031331300A patent/CN100361229C/zh not_active Expired - Fee Related
-
2005
- 2005-02-18 US US11/060,305 patent/US6996002B2/en not_active Expired - Lifetime